基于“区域+能力+场景”的视频彩铃技术应用与研究

VoLTE(Voice over LTE)是基于IMS(IP Multimedia Subsystem)网络的语音业务,而视频彩铃是基于VoLTE的一种增值业务。传统视频彩铃业务是一项由被叫用户定制,为主叫用户提供一段悦耳、多彩或有趣的视频媒体来替代普通网络回铃音的业务,位于运营商的核心网侧。该系统的信令面与核心网S-CSCF(Serving-Call Session Control Function)相连,提供多种信令的统一接入处理;媒体面与SBC(Session Border Controller)相连,为用户提供彩铃的媒体放音。本文通过创新的思路,基于“区域+能力+场景”搭建新视频彩铃平台,并独立于原大网视频彩铃系统建设,可快速实现向具备VoLTE能力的主叫用户精准投放视频宣传彩铃。其主要核心是采用核心网上报的主叫位置信息的方式精准分析目标客户,将媒体宣传直接投至主叫用户的手机屏幕,该方式具备高效直观、定位精准的优势,逐步打开视频彩铃商业化的局面。     

基于IMS的多媒体彩铃业务的设计和实现

多媒体彩铃(MRBT)业务是一种采用多种媒体作为回铃音的增值业务.结合IMS网络体系结构和MRBT业务属性,提出一种利用多媒体彩铃业务平台来实现MRBT业务的方案,包括系统设计和基于SIP(会话发起协议)的信令流程.同时,给出相关的特点分析并进行总结.     

云南移动积极探索VoLTE视频彩铃新业务

彩铃业务的本质是个性化的网络回铃音,随着基础通信技术的不断演进,彩铃业务始终保持"语音通信网最佳伴侣业务"的核心地位,是运营商独有的特色业务,历经10余年发展,已成为最具用户基础及认可的增值业务,是运营商整合音乐产业链的重要抓手,传播力巨大的新媒体,具有核心产品竞争力。VoLTE技术革新,为彩铃业务迈入视频时代奠定坚实基础。VoLTE视频彩铃业务是一项由被叫用户定制,为主叫用户提供一段悦耳、多彩或有趣的视频媒体来替代普通网络回铃音的业务是一种被叫业务~([1]),可以根据被叫用户事先预设的条件向主叫用户播放相应的视频文件,使媒体展示具备了互动的可能,可在终端支持下根据媒体流或屏幕位置点击信息实现与后端双向互动,打造VoLTE下全面革新的彩铃业务,为VoLTE量身打造优势展现业务及杀手级应用。     

基于IMS的主叫彩铃与传统2G彩铃融合方案的研究

主叫彩铃业务是一种主叫定制,并展示给主叫个性化回铃音的增值业务,如何解决好主叫彩铃业务与传统2G彩铃业务的融合,成为主叫彩铃业务发展与推广的关键。本文详细介绍了基于IP多媒体子系统(IMS)锚定方案实现的主叫彩铃系统,并基于该方案给出了主叫彩铃业务与传统2G彩铃业务融合的一种解决方案。     

基于3GR4网络的多媒体彩铃方案

多媒体彩铃业务是移动运营商未来3G网络的一个重要增值业务.介绍基于3G R4网络的三种多媒体彩铃组网方案,并对三种方案进行了比较,得出终端支持二次协商的彩铃组网方案是最适合采用的组网方案.     

基于IMS的多媒体彩铃关键问题研究

在介绍基于IMS的多媒体彩铃体系架构及网元功能的基础上,给出了多媒体彩铃服务器的信令方式实现流程和RTP实现方式,包括2种不同模式的具体流程及其比较,同时分析了业务特点和市场前景,并且提供了IMS的多媒体彩铃部署建议。     

VOLTE彩铃方案

VoLTE场景下,彩铃部署AS服务器,用于处理彩铃SIP呼叫信令,呼叫由IMS核心网触发彩铃业务,在HSS上配置iFC规则(对应2G/3G网络下HLR上的SS_code)。通知URP部件向主叫终端播放彩铃音。其余业务流程与2/3G一样。     

基于PTD2112的VoLTE 4G手机研究

LTE模式下主要的语音解决方案有双待机方案、CSFB和VoLTE。基于VoLTE的方案,有功耗低、软件健壮度好、话音数字信号处理方便等方面的优势。提出了一种采用PTD2112的VoLTE 4G手机实现方法,IP电话采用实现简单的SIP协议,核心业务控制网络是IMS（IP多媒体子系统）网络,配合LTE网络实现端到端的基于分组域的语音、视频通信业务。重点阐述基于PTD2112的VoLTE 4G手机的硬件与软件设计方法,该4G手机在中国移动的LTE网络运行良好,能实现电话的主叫和被叫。     

IMS彩铃及现网彩铃业务融合方案探讨

随着IMS(IP多媒体子系统)网络大规模的建设,IMS网络的组网、技术和业务提供能力等成为运营商关注的焦点.彩铃业务作为电信运营商的一项增值业务,不仅为固网、C网用户提供,同时也为IMS用户提供.对IMS用户彩铃和现网用户彩铃业务的融合进行了探讨,提出了五种不同解决方案.     

一种基于话统的VoLTE接通率分析方法

呼叫接通率是语音业务关键性能指标之一,优化VOlTE呼叫接通率,可提高用户对VoLTE语音业务的满意度。本文以VoLTE网络结构和业务场景为基础,提出一种基于话统的VoLTE接通问题分析方法,可用于快速发现和分析VoLTE接通问题。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.