基于遗传算法的星载InSAR多基线编队构形优化设计

在多基线干涉合成孔径雷达(InSAR)系统设计中,多基线优化是实现高精度测高任务的前提和保证.采用遗传算法优化多根基线,以卫星的六个轨道根数为设计变量,从相对运动方程出发以相干性为约束推导约束条件.同时采用基于定位方程的高精度模型,将多基线测高误差的倒数作为优化算法的目标函数.仿真验证了优化算法的正确性,同时证明通过此方法优化,能够提高多基线星载InSAR系统的测高精度.     

基于毫米波多基线InSAR的雷达测绘技术

机载毫米波InSAR具备不受光照限制、测绘幅宽大、测绘精度高的特点,近年来随着其技术的不断发展和完善,逐渐成为一种被广泛关注的测绘手段。在针对小型飞行平台的高精度毫米波InSAR系统设计中,InSAR基线构型、多基线配置、外部数字高程模型(DEM)参考及InSAR处理流程是系统设计的核心。该文分析了机载毫米波InSAR系统中基线参数对干涉高程测量的影响,提出基于一体化天线吊舱的毫米波多基线InSAR系统设计思路,在此基础上提出基于时域成像算法的毫米波多基线InSAR测高处理流程。最后,实测数据实验验证了该文给出的机载毫米波多基线InSAR系统及其干涉数据处理方法在大比例尺测绘任务中的可行性和有效性。      

星载分布式InSAR测高性能的 理论及系统仿真评价方法

针对星载分布式干涉合成孔径雷达(InSAR)系统空间几何构形,全面分析了卫星状态误差、干涉基线误差、干涉相位误差、时间、频率和波束三同步误差以及斜距测量误差等分布式InSAR测高误差源,给出了系统测高误差总的传递关系.以三大同步误差为重点,推导了各误差源到高程误差的理论传递模型,给出了分布式InSAR系统的理论评价方法.基于分布式InSAR全过程仿真平台,提出了一种通过构造一定平均坡度的典型场景和自然场景来进行系统仿真的实验评价新方法.通过理论和系统仿真实验两种评价方法的结合,使得分布式InSAR系统的性能评价更加全面、真实.     

分布式InSAR测高的基线测量精度指标分析

基线是分布式星载干涉SAR中的重要参数。从分布式InSAR测高的基本原理出发，推导了基线对InSAR测高影响的误差传递公式；然后结合基线的测量原理，提出了合理的基线测量精度指标；进而给出了由测高精度指标反演基线测量的精度指标的方法；仿真结果验证了其精度指标反演方法的正确性。     

基于定位方程的多基线InSAR测高精度分析

分布式星载合成孔径雷达干涉测高系统提供了多个通道的观测数据。为地面目标的高程重建提供了冗余信息,文中提出通过对多基线定位方程进行泰勒展开的一阶近似方法,分析了该冗余信息对测高精度的影响。从提高测高精度、优化系统设计的角度出发,通过调整系统基线的指向来改变各参数的误差传播系数,得到最优的测高精度。采用Monte—Carlo和信号仿真两种方法验证了误差传播系数的理论推导,同时将优化后的多基线系统的高程误差传播系数与单基线系统作了对比。结果表明,上述测高精度分析方法是可行的;通过合理的多基线设计,可以降低单基线系统各参数的高程误差敏感度。     

机载预警雷达测高精度分析

对影响机载预警雷达测高精度的因素进行分类基础上,针对单脉冲雷达的测角方法,列出了影响机载预警雷达测高精度的主要因素。基于地/海杂波、大气折射、电波传播多径效应、载机平台运动和导航系统等因素,分析了对于机载预警雷达测高误差产生的机理,评估了多种因素对测高精度的影响程度,提出了在系统设计和补偿固定误差等方面提高雷达测高精度的建议。     

主星带小卫星分布式SAR干涉的相对测高精度分析

相对测高精度是干涉SAR测高性能的重要指标之一。该文根据主星带小卫星分布式SAR系统的实际空间几何条件下建立了干涉测高原理;基于相对测高几何,推导了相对测高精度与干涉相位误差的关系式;理论分析了基线去相关、图像配准误差去相关、热噪声去相关等,并推导了图像相关系数;最后,仿真分析了图像去相关因素对于主星带小卫星分布式SAR干涉的相对测高精度影响。结果发现:对于平坦地形来说,热噪声与配准误差是影响相对测高精度的主要因素,而基线去相关影响相对较小。     

三坐标地面情报雷达测高误差修正方法

在全面分析影响三坐标地面情报雷达测高精度的各种因素的基础上,通过对各种因素引起的测高误差进行量化分析,构建了一套比较系统的三坐标雷达测高精度表征体系,找准误差修正工作的重点和难点。经研究表明,测高误差主要是天线辐射波束仰角偏差引起,可通过对测高值的实时比对分析和对辐射波束仰角的实时调整,实现测高误差修正;为此设计一套系统全面的三坐标雷达测高精度阵地优化技术方案。     

InSAR误差建模与误差估计方法

针对干涉合成孔径雷达(InSAR)系统的误差问题,对系统各种误差源按照误差特性进行分析和分类,通过误差传递分析,建立了InSAR测高误差的参数化模型.在此基础上,利用地面控制点,通过最小二乘法得到整个测绘带内的系统性高程误差分布,进而根据各类误差对测高误差的影响规律,分别将恒定误差、缓变误差和随机误差分类提取出来.仿真...     

一种主星带小卫星分布式SAR系统的多基线干涉测高方法

针对主星带小卫星分布式SAR系统进行多基线干涉测高的优越性,本文提出了一种多基线干涉测高方法。先从干涉测高原理入手,分析特征量ψ对于绝对测高精度的影响;利用第三颗小卫星接收的回波得到另一个干涉相位,消除掉原来的特征量ψ,建立了多基线干涉测高原理,并推导了所有特征量对于绝对测高精度的误差传递;最后,仿真结果证明本方法是有效的。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.