共查询到20条相似文献,搜索用时 15 毫秒
1.
Baoyong Chi Shuguang Han Zhihua Wang 《Analog Integrated Circuits and Signal Processing》2011,67(2):131-136
A low power direct-conversion receiver RF front-end with high in-band IIP2/IIP3 and low 1/f noise is presented. The front-end
includes the differential low noise amplifier, the down-conversion mixer, the LO buffer, the IF buffer and the bandgap reference.
A modified common source topology is used as the input stages of the down-conversion mixer (and the LNA) to improve IIP2 of
the receiver RF front-end while maintaining high IIP3. A shunt LC network is inserted into the common-source node of the switching
pairs in the down-conversion mixer to absorb the parasitic capacitance and thus improve IIP2 and lower down the 1/f noise
of the down-conversion mixer. The direct-conversion receiver RF front-end has been implemented in 0.18 μm CMOS process. The
measured results show that the 2 GHz receiver RF front-end achieves +33 dBm in-band IIP2, 21 dB power gain, 6.2 dB NF and
−2.3 dBm in-band IIP3 while only drawing 6.7 mA current from a 1.8 V power supply. 相似文献
2.
介绍了一种应用于IEEE802.11b/g无线局域网接收机射频前端的设计。基于直接下变频的系统架构。接收机集成了低噪声放大器、I/Q下变频器、去直流偏移滤波器、基带放大器和信道选择滤波器。电路采用TSMC0.18μm CMOS工艺设计,工作在2.4GHz ISM(工业、科学和医疗)频段,实现的低噪声放大器噪声系数为0.84dB,增益为16dB,S11低于-15dB,功耗为13mW;I/Q下变频器电压增益为2dB,输入1dB压缩点为-1 dBm,噪声系数为13dB,功耗低于10mw。整个接收机射频前端仿真得到的噪声系数为3.5dB,IIP3为-8dBm,IP2大于30dBm,电压增益为31dB,功耗为32mW。 相似文献
3.
Bakkaloglu B. Fontaine P. Mohieldin A.N. Solti Peng Sher Jiun Fang Dulger F. 《Solid-State Circuits, IEEE Journal of》2006,41(5):1149-1159
A single chip quad-band multi-mode (GSM900/ DCS1800/PCS1900/CDMA2K) direct-conversion RF receiver with integrated baseband ADCs is presented. The fully integrated RF receiver is implemented in a 90-nm single poly, six level metal, standard digital CMOS process with no additional analog and RF components. The highly digital multi-mode receiver uses minimum analog filtering and AGC stages, digitizing useful signal, dynamic DC offsets and blockers at the mixer output. The direct-conversion GSM front-end utilizes resistive loaded LNAs with only two coupled inductors per LNA. The GSM front-end achieves a 31.5 dB gain and a 2.1 dB integrated noise figure with a 5 dB noise figure under blocking conditions. The CDMA2K front-end utilizes a self-biased common-gate input amplifier followed by passive mixers, achieving wideband input matching from 900 MHz up to 2.1 GHz with an IIP3 of +8 dBm. The GSM receiver consumes 38 mA from a power supply of 1.5 V and CDMA2K receiver consumes 16 mA in the low band and 21 mA in the high band. The multi-mode receiver, including LO buffers and frequency dividers, ADCs, and reference buffers, occupies 2.5 mm/sup 2/. 相似文献
4.
Zheng Renliang Jiang Xudong Yao Wang Yang Guang Yin Jiangwei Zheng Jianqin Ren Junyan Li Wei Li Ning 《半导体学报》2010,31(6)
A monolithic RF transceiver for an MB-OFDM UWB system in 3.1-4.8 GHz is presented.The transceiver adopts direct-conversion architecture and integrates all building blocks including a gain controllable wideband LNA,a I/Q merged quadrature mixer,a fifth-order Gm-C bi-quad Chebyshev LPF/VGA,a fast-settling frequency synthesizer with a poly-phase filter,a linear broadband up-conversion quadrature modulator,an active D2S converter and a variablegain power amplifier.The ESD protected transceiver is fabricated in Jazz Semiconductor's 0.18-μm RF CMOS with an area of 6.1 mm2 and draws a total current of 221 mA from 1.8-V supply.The receiver achieves a maximum voltage gain of 68 dB with a control range of 42 dB in 6 dB/Step,noise figures of 5.5-8.8 dB for three sub-bands,and an inband/out-band IIP3 better than-4 dBm/+9 dBm.The transmitter achieves an output power ranging from-10.7 to-3dBm with gain control,an output P1dB better than-7.7 dBm,a sideband rejection about 32.4 dBc,and LO suppression of 31.1 dBc.The hopping time among sub-bands is less than 2.05 ns. 相似文献
5.
实现了一个单片集成、直接转换结构的2.4GHz CMOS接收机.这个正交接收机作为低成本方案应用于802.11b无线局域网系统,所处理的数据传输率为该系统的最大速率--11Mbps.基于系统设计以及低噪声高线性度考虑,设计了低噪声放大器、直接转换混频器、增益可变放大器、低通滤波器、直流失调抵消电路及其他辅助电路.该芯片采用中芯国际0.18μm 1p6m RF CMOS工艺流片.所测的接收机性能如下:噪声系数为4.1dB,高增益设置下低噪声放大器与混频器的输入三阶交调点为-7.5dBm,整个接收机的输入三阶交调点为-14dBm,相邻信道干扰抑制能力在距中心频率30MHz处达到53dBc,输出直流失调电压小于5mV.该接收机采用1.8V电源电压,I,Q两路消耗的总电流为44mA. 相似文献
6.
A novel low power RF receiver front-end for 3-5 GHz UWB is presented. Designed in the 0.13μm CMOS process, the direct conversion receiver features a wideband balun-coupled noise cancelling transconductance input stage, followed by quadrature passive mixers and transimpedance loading amplifiers. Measurement results show that the receiver achieves an input return loss below-8.5 dB across the 3.1-4.7 GHz frequency range, max-imum voltage conversion gain of 27 dB, minimum noise figure of 4 dB, IIP3 of-11.5 dBm, and IIP2 of 33 dBm. Working under 1.2 V supply voltage, the receiver consumes total current of 18 mA including 10 mA by on-chip quadrature LO signal generation and buffer circuits. The chip area with pads is 1.1 × 1.5 mm2. 相似文献
7.
Calibration techniques of active BiCMOS mixers 总被引:1,自引:0,他引:1
Kivekas K. Parssinen A. Ryynanen J. Jussila J. 《Solid-State Circuits, IEEE Journal of》2002,37(6):766-769
This paper describes calibration techniques for downconversion mixers used in integrated direct-conversion receivers. A method of achieving a high even-order intermodulation rejection is presented. Using the method presented, the receiver second-order input intercept point (IIP2) can always be improved by more than 20 dB. The minimum achieved receiver IIP2 after calibration is +38 dBm. A technique to enhance the I/Q-amplitude balance between the quadrature channels is also introduced. A single-balanced adjustable mixer is implemented as a part of a prototype direct-conversion receiver. The receiver chip consists of a low-noise amplifier, mixers and calibration circuitry, a divide-by-two circuit, local oscillator (LO) buffers for LO generation, and active baseband filters. The chip is fabricated using a 0.35-μm SiGe BiCMOS process and is characterized at 900 MHz 相似文献
8.
9.
Ying-Dan Jiang Run-Xi Zhang Chun-Qi Shi Zong-Sheng Lai 《Analog Integrated Circuits and Signal Processing》2012,72(1):129-139
This paper presents a semi-active in-phase/quadrature inductor-less down-conversion mixer. The mixer consists of an active trans-conductance stage, a passive current switching stage, and a trans-impedance stage. A complementary input architecture has been used to increase the trans-conductance for a given bias current. An on-chip prescaler is added to provide the balanced LO signals, while the CMFB circuit in trans-conductance stage is designed to enhance linearity. The chip was achieved in a 0.13???m CMOS technology. It features 5?dB conversion gain over a broad range from 800?MHz to 2.1?GHz, which supports Chinese TD-SCDMA/RFID standards simultaneously. The maximum IIP2 is +76?dBm at 2.1?GHz and suitable for application within a direct-conversion receiver. 相似文献
10.
A 1.2-V RF front-end with on-chip VCO for PCS 1900 direct conversion receiver in 0.13-/spl mu/m CMOS
Sivonen P. Tervaluoto J. Mikkola N. Parssinen A. 《Solid-State Circuits, IEEE Journal of》2006,41(2):384-394
In this paper, a 1.2-V RF front-end realized for the personal communications services (PCS) direct conversion receiver is presented. The RF front-end comprises a low-noise amplifier (LNA), quadrature mixers, and active RC low-pass filters with gain control. Quadrature local oscillator (LO) signals are generated on chip by a double-frequency voltage-controlled oscillator (VCO) and frequency divider. A current-mode interface between the downconversion mixer output and analog baseband input together with a dynamic matching technique simultaneously improves the mixer linearity, allows the reduction of flicker noise due to the mixer switches, and minimizes the noise contribution of the analog baseband. The dynamic matching technique is employed to suppress the flicker noise of the common-mode feedback (CMFB) circuit utilized at the mixer output, which otherwise would dominate the low-frequency noise of the mixer. Various low-voltage circuit techniques are employed to enhance both the mixer second- and third-order linearity, and to lower the flicker noise. The RF front-end is fabricated in a 0.13-/spl mu/m CMOS process utilizing only standard process options. The RF front-end achieves a voltage gain of 50 dB, noise figure of 3.9 dB when integrated from 100 Hz to 135 kHz, IIP3 of -9 dBm, and at least IIP2 of +30dBm without calibration. The 4-GHz VCO meets the PCS 1900 phase noise specifications and has a phase noise of -132dBc/Hz at 3-MHz offset. 相似文献
11.
Hafizi M. Shen Feng Taoling Fu Schulze K. Ruth R. Schwab R. Karlsen P. Simmonds D. Qizheng Gu 《Solid-State Circuits, IEEE Journal of》2004,39(10):1622-1632
We report on the front-end of a highly integrated dual-band direct-conversion receiver IC for cdma-2000 mobile handset applications. The RF front-end included a CELL-band low-noise amplifier (LNA), dual-band direct-conversion quadrature I/Q down-converters, and a local-oscillator (LO) signal generation circuit. At 2.7 V, the LNA had a noise figure of 1.2 dB and input third-order intermodulation product (IIP3) of 9 dBm. I/Q down-converters had a noise figure of 4-5 dB and IIP3 of 4-5 dBm and IIP2 of 55 dBm. An on-chip phase-locked loop and external voltage-controlled oscillator generated the LO signal. The receiver RFIC was implemented in a 0.35-/spl mu/m SiGe BiCMOS process and meets or exceeds all cdma-2000 requirements when tested individually or on a handset. 相似文献
12.
设计了一个应用于软件无线电接收机中的宽带无源下变频混频器,采用SMIC 0.13μm RF工艺实现,芯片面积0.42 mm<'2>.测试结果表明:在1.2 V电源电压下消耗了9 mA电流,工作频段0.9~2.2 GHz,电压转换增益17 dB,HP3 6~7 dBm,IIP2 40~42 dBm,DSB NF 17.5... 相似文献
13.
Woonyun Kim Jinhyuck Yu Heeseon Shin Sung-Gi Yang Wooseung Choo Byeong-Ha Park 《Microwave Theory and Techniques》2006,54(5):2098-2105
A highly integrated direct conversion receiver for cellular code division multiple access (CDMA) and GPS applications is successfully developed using a 0.5-/spl mu/m SiGe BiCMOS technology. The receiver consists of two low-noise amplifiers (LNAs), a dual-band mixer, two voltage-controlled oscillators (VCOs), a local-oscillator signal generation block, and channel filters. The CDMA LNA achieves a noise figure of 1.3 dB, an input-referred third-order intercept point (IIP3) of 10.9 dBm, and a gain of 15.3 dB with a current consumption of 9.8 mA in the high-gain mode. The mixer for the CDMA mode achieves an uncalibrated input-referred second-order intercept point of 53.7 dBm, an IIP3 of 6.4 dBm, a noise figure of 7.2 dB and a voltage gain of 37.2 dB. The phase noise of the CDMA VCO is approximately -133 dBc/Hz at a 900-kHz offset from a 1.762-GHz operating frequency. It exceeds all the CDMA requirements when tested on a handset. 相似文献
14.
Lim K. Lee S.-H. Min S. Ock S. Hwang M.-W. Lee C.-H. Kim K.-L. Han S. 《Solid-State Circuits, IEEE Journal of》2006,41(11):2408-2416
This paper describes a fully integrated zero-IF receiver for cellular CDMA and GPS applications. The single-chip zero-IF receiver integrates the entire signal path for CDMA and GPS bands, including a low-noise amplifier (LNA), I/Q down-converters, baseband channel selection filters (CSFs), a voltage-controlled oscillator (VCO), and a local oscillator (LO) distribution circuit for each band. The cellular-band LNA achieves a noise figure (NF) of 1.2 dB, input third-order intercept point (IIP3) of 11 dBm, and gain of 15.5 dB. Cellular I/Q down-converter and baseband circuitries show 9-dB composite NF, 9 dBm IIP3 and 60-dBm input second-order intercept point (IIP2) without IIP2 calibration. The measured LO leakage is less than -110 dBm at LNA input. The phase noise of the cellular VCO is -134 dBc/Hz at 900-kHz offset with 1.76-GHz carrier frequency. Total GPS signal path achieves NF of 1.7 dB and gain of 74 dB with 42-mA current. The receiver is fabricated in a 0.35-mum SiGe BiCMOS process and packaged in a 6 mm times 6 mm 40-pin micro-lead-frame. Handset measurements report that the receiver meets or exceeds all of the CDMA-2000 requirements 相似文献
15.
Rogin J. Kouchev I. Brenna G. Tschopp D. Qiuting Huang 《Solid-State Circuits, IEEE Journal of》2003,38(12):2239-2248
A 2-GHz direct-conversion receiver for wide-band code division multiple access (WCDMA) is presented. It includes two low-noise amplifiers (LNAs), an I/Q demodulator, and two sixth-order baseband channel select filters with programmable gain. Quadrature local oscillator (LO) signals are generated on chip in a frequency divider flip-flop. An external interstage filter between the LNAs rejects transmitter leakage to relax demodulator linearity requirements. A low-voltage demodulator topology improves linearity as well as demodulator output pole accuracy. The active-RC baseband filter uses a programmable servo loop for offset compensation and provides an adjacent channel rejection of 39 dB. Programmable gain over 71-dB range in 1-dB steps is merged with the filter to maximize dynamic range. An automatic on-chip frequency calibration scheme provides better than 1.5% corner frequency accuracy. The receiver is integrated in a 0.13-/spl mu/m CMOS process with metal-insulator-metal (MIM) capacitors. Measured receiver performance includes a 6.5-dB noise figure, IIP2 of +27 dBm, and IIP3 of -8.6 dBm. Power consumption is 45 mW. 相似文献
16.
Woonyun Kim Sung-Gi Yang Jinhyuck Yu Heeseon Shin Wooseung Choo Byeong-Ha Park 《Solid-State Circuits, IEEE Journal of》2006,41(7):1535-1541
A second-order intercept point (IP2) calibration technique is developed using common-mode feedback (CMFB) circuitry in a direct-conversion receiver for wireless CDMA/PCS/GPS/AMPS applications. The IP2 calibrator is capable of providing different CMFB gain to tune its common-mode output impedance for each of the positive and negative mixer outputs. The CDMA mixer applying this method achieved a second-order input intercept point (IIP2) of 64 dBm, a third-order input intercept point (IIP3) of 4 dBm, a noise figure of 6.5 dB and a voltage gain of 42.2 dB. This result shows a 20 dB improvement from an uncalibrated IIP2 of 44 dBm. The receiver RFIC is implemented in a 0.5-/spl mu/m SiGe BiCMOS process, and it operates from a 2.7 to 3.1 V single power supply. 相似文献
17.
This paper describes a radio-frequency receiver targeting spread-spectrum wireless local-area-network applications in the 2.4-GHz band. Based on a direct-conversion architecture, the receiver employs partial channel selection filtering, dc offset removal, and baseband amplification. Fabricated in a 0.6-μm CMOS technology, the receiver achieves a noise figure of 8.3 dB, IP3 of -9 dBm, IP2 of +22 dBm, and voltage gain of 34 dB while dissipating 80 mW from a 3-V supply 相似文献
18.
Camus M. Butaye B. Garcia L. Sie M. Pellat B. Parra T. 《Solid-State Circuits, IEEE Journal of》2008,43(6):1372-1383
An integrated 2.4 GHz CMOS receiver front-end according to the IEEE 802.15.4 standard is presented in this paper. It integrates the overall RF part, from the balun up to the first stage of the channel filter, as well as the cells for the LO signal conditioning. The proposed architecture is based on a 6 MHz low-IF topology, which uses an inductorless LNA and a new clocking scheme for driving a passive mixer. When integrated in a 90 nm CMOS technology, the receiver front-end exhibits an area of only 0.07 mm2, or 0.23 mm2 when including an input integrated balun. The overall chip consumes 4 mA from a single 1.35 V supply voltage and it achieves a 35 dB conversion gain from input power in dBm to output voltage in dBvpk, a 7.5 dB NF value, -10 dBm of IIP3 and more than 32 dB of image rejection. 相似文献
19.
Chen T.H. Chang K.W. Bui S.B.T. Liu L.C.T. Dow G.S. Pak S. 《Microwave Theory and Techniques》1995,43(3):477-484
A double-balanced (DB) 3-18 GHz and a single-balanced (SB) 2-16 GHz resistive HEMT monolithic mixer have been successfully developed. The DB mixer consists of a AlGaAs/InGaAs HEMT quad, an active LO balun, and two passive baluns for RF and IF. At 16 dBm LO power, this mixer achieves the conversion losses of 7.5-9 dB for 4-13 GHz RF and 7.5-11 dB for 3-18 GHz RF. The SB mixer consists of a pair of AlGaAs/InGaAs HEMT's, an active LO balun, a passive IF balun and a passive RF power divider. At 16 dBm LO power, this mixer achieves the conversion losses of 8-10 dB for 4-15 GHz RF and 8-11 dB for 2-16 GHz RF. The simulated conversion losses of both mixers are very much in agreement with the measured results. Also, the DB mixer achieves a third-order input intercept (IP3) of +19.5 to +27.5 dBm for a 7-18 GHz RF and 1 GHz IF at a LO drive of 16 dBm while the SB mixer achieves an input IP 3 of +20 to +28.5 dBm for 2 to 16 GHz RF and 1 GHz IF at a 16 dBm LO power. The bandwidth of the RF and LO frequencies are approximately 6:1 for the DB mixer and 8:1 for the SB mixer. The DB mixer of this work is believed to be the first reported DB resistive HEMT MMIC mixer covering such a broad bandwidth 相似文献
20.
《Solid-State Circuits, IEEE Journal of》2009,44(5):1380-1390