A 10-Gb/s silicon bipolar IC for PRBS testing

A 10 Gb/s silicon bipolar IC for pseudorandom binary sequence (PRBS) testing was fabricated and tested. The IC features PRBS generation of the sequences of length 2¹⁵-1 and 2²³-1 b up to 10 Gb/s according to CCITT recommendations. Furthermore, the IC is capable of analyzing PRB sequences of the same length and generation polynomials so that a full test of components is possible. In addition, a new PRBS test word synchronization can be provided between two chips for external multiplexing of the sequences up to 40 Gb/s. The IC can be connected to a standard PC, so evaluation of the error test data can be performed in a flexible way. The IC was fabricated with the HP25 process of Hewlett Packard company, the chip size is 32 mm², and it consumes 6.2 W at the nominal supply voltage of -5 V     

Optical phase-locked PSK heterodyne experiment at 4 Gb/s

A 4 Gb/s phase-locked optical PSK (phase shift keying) heterodyne communication system is demonstrated. The receiver was implemented with a single 100-Ω loaded p-i-n photodiode and a 1320-nm diode-pumped miniature Nd:YAG laser as a local oscillator. For a 2⁷-1 PRBS (pseudorandom bit sequence), the receiver sensitivity was -34.2 dBm or 631 photons/bit. The corresponding power on the surface of the detector was -37.3 dBm or 309 photons/bit. With a 2¹⁵-1 PRBS, a 2.6 dB additional sensitivity degradation was observed due to the nonideal frequency response of the phase modulator and the receiver amplifiers     

A 3.3-V 21-Gb/s PRBS generator in AlGaAs/GaAs HBT technology

We present a pseudorandom bit sequence (PRBS) generator that outputs a 2⁷-1 bit pattern at rates up to 21 Gb/s. The circuit is implemented in a 40-GHz AlGaAs/GaAs heterojunction bipolar transistor (HBT) standard production process, operates from a single 3.3-V power supply, and consumes 1.1 W of power. We discuss variations of PRBS architecture and digital circuit topologies which exploit unique characteristics of AlGaAs/GaAs HBT devices. The work demonstrates the feasibility of using AlGaAs/GaAs HBT technology with low-voltage/low-power design techniques in complex high-speed circuits     

A Si bipolar phase and frequency detector IC for clock extractionup to 8 Gb/s

A phase and frequency detector IC is presented that operates up to an NRZ bit rate of 8 Gb/s. The IC comprises a phase detector (PD), a quadrature phase detector (QPD), and frequency detector (FD). In the PD and QPD the VCO signal and the quadrature VCO signal are sampled by the NRZ input signal. The two beat notes provided by this operation are subsequently processed in the FD. The superposition of the FD output and the PD output signals are then fed into a passive loop filter (lag/lead filter). The loop filter and the VCO are external components. The measured pull-in range is >±100 MHz at 8 Gb/s. The measured r.m.s. time jitter of the extracted clock is less than 1.9 ps for a pseudorandom bit sequence (PRBS) length of 2²³-1. A 0.9-μm 12-GHz f_T silicon bipolar process was used to fabricate the chip with a total power consumption of 1.4 W     

One-third terabit/s transmission through 150 km ofdispersion-managed fiber

340 Gb/s (seventeen 20-Gb/s 2³¹-1 PRBS NRZ channels) were transmitted through 150 km of fiber with 50 km amplifier spacing. Chromatic dispersion penalties and four-photon mixing effects were minimized by dispersion management     

A 40–44 Gb/s 3× Oversampling CMOS CDR/1:16 DEMUX

A CMOS CDR and 1:16 DEMUX fabricated in a low-cost 90 nm bulk CMOS process operates at 40-44 Gb/s and dissipates 910 mW. A quarter-rate hybrid phase-tracking/3times blind-oversampling architecture is used to improve jitter tolerance, reduce the need for high-power CML circuits, and enable frequency acquisition without a reference clock. Input data are sampled using a 24-phase distributed VCO, and a digital CDR recovers 16 bits and a 2.5 GHz clock from 48 demultiplexed samples spanning 16 UI. Conformance to the ITU-T G.8251 jitter tolerance mask (BER <10^-12 with a 2³¹-1 PRBS source) is demonstrated using both an on-chip and an external BERT.     

PRBS generation and error detection above 10 Gb/s using amonolithic Si bipolar IC

This paper describes the application of a monolithic Si bipolar IC to serve as a single-chip measurement instrument for pseudo-random binary sequence (PRBS) generation, bit error detection, de-scrambling, and trigger derivation up to 12.5 Gb/s. The package interconnect problem of high I/O count multi-Gb/s IC's is addressed. The paper presents a packaging solution with improved ground contact and odd-mode controlled impedance differential microstrip transmission lines. A method for phase synchronization of multiple PRBS generators is proposed and its feasibility is demonstrated by measurement results     

1 Gbit/s PSK homodyne transmission system using phase-lockedsemiconductor lasers

Homodyne detection of 1 Gb/s pilot-carrier (BPSK) optical signals using phase-locked 1.5 μm external-cavity semiconductor lasers is discussed. After 209 km fiber transmission of a 2¹⁵-1 pseudorandom binary sequence (PRBS), the measured receiver sensitivity is 52.2 dBm or 46 photons/bit. Experimental evidence of the data-to-phase-lock crosstalk that potentially limits the usable ratio of linewidth to bit rate in pilot-carrier PSK homodyne systems is presented     

A Jitter-Tolerance-Enhanced CDR Using a GDCO-Based Phase Detector

A jitter-tolerance-enhanced 10 Gb/s clock and data recovery (CDR) circuit is presented. The proposed architecture cascades 2 half-rate CDRs with different loop bandwidth to relax the design bottleneck and the predicted jitter tolerance can be enhanced without sacrificing the jitter transfer. By using a gated digital-controlled oscillator (GDCO), the proposed GDCO-based phase detector may reduce the cost of this architecture and achieve a wide linear range. This CDR circuit has been fabricated in a 0.13 mum CMOS technology and consumes 60 mW from a 1.5 V supply. It occupies an active area of 0.36 mm². The measured rms jitter is 0.96 ps and the peak-to-peak jitter is 7.11 ps for a 10 Gb/s 2⁷-1 PRBS. The measured bit error rate for a 10 Gb/s 2⁷-1PRBS is less than 10^-12.     

Penalty-free error-free all-optical data pulse regeneration at 84Gb/s by using a symmetric-Mach-Zehnder-type semiconductor regenerator

Penalty-free data-pulse regeneration at 84 Gb/s was achieved down to an error rate level of 1×10^-11 by using a data pattern length of 2³¹-1. A symmetric-Mach-Zehnder-type all-optical polarization-insensitive semiconductor regenerator was used     

A monolithic 156 Mb/s clock and data recovery PLL circuit using thesample-and-hold technique

The PLL circuit described here performs the function of data and clock recovery for random data patterns by using a sample-and-hold technique, and four component circuits (a phase comparator, a delay circuit, a voltage-controlled oscillator, and a S/H switch with a low-pass-filter) were specially designed to further stabilize the PLL operation. A test chip fabricated using Si bipolar process technology demonstrated error-free operation with an input of 2²³-1 PRBS data at 156 Mb/s. The rms data pattern jitter was reduced to only 1.2 degrees with only an external power supply bypass capacitor     

High-Performance Optical 3R Regeneration for Scalable Fiber Transmission System Applications

This paper proposes and demonstrates optical 3R regeneration techniques for high-performance and scalable 10-Gb/s transmission systems. The 3R structures rely on monolithically integrated all-active semiconductor optical amplifier-based Mach-Zehnder interferometers (SOA-MZIs) for signal reshaping and optical narrowband filtering using a Fabry-Peacuterot filter (FPF) for all-optical clock recovery. The experimental results indicate very stable operation and superior cascadability of the proposed optical 3R structure, allowing error-free and low-penalty 10-Gb/s [pseudorandom bit sequence (PRBS) 2²³-1 ] return-to-zero (RZ) transmission through a record distance of 1 250 000 km using 10 000 optical 3R stages. Clock-enhancement techniques using a SOA-MZI are then proposed to accommodate the clock performance degradations that arise from dispersion uncompensated transmission. Leveraging such clock-enhancement techniques, we experimentally demonstrate error-free 125 000-km RZ dispersion uncompensated transmission at 10 Gb/s (PRBS 2²³-1) using 1000 stages of optical 3R regenerators spaced by 125-km large-effective-area fiber spans. To evaluate the proposed optical 3R structures in a relatively realistic environment and to investigate the tradeoff between the cascadability and the spacing of the optical 3R, a fiber recirculation loop is set up with 264- and 462-km deployed fiber. The field-trial experiment achieves error-free 10-Gb/s RZ transmission using PRBS 2²³-1 through 264 000-km deployed fiber across 1000 stages of optical 3R regenerators spaced by 264-km spans     

A 5-mW 6-Gb/s Quarter-Rate Sampling Receiver With a 2-Tap DFE Using Soft Decisions

A quarter-rate sampling receiver with a 2-tap decision feedback equalizer (DFE) is implemented in 90-nm CMOS technology for low-power I/O links. An analog sampling and soft-decision technique is introduced to relax the timing critical feedback path of the DFE. The shortened critical path enables better power performance. Error rates are below the measurement capability of 10^-12 with 2³¹-1 PRBS at 6 Gb/s, with an 80-mV differential launch amplitude through a channel with 6.2-dB attenuation at 3 GHz. The receiver draws 4.08 mA from a 1.0-V supply     

A CMOS clock recovery circuit for 2.5-Gb/s NRZ data

This paper describes a phase-locked clock recovery circuit that operates at 2.5 Gb/s in a 0.4-μm digital CMOS technology. To achieve a high speed with low power dissipation, a two-stage ring oscillator is introduced that employs an excess phase technique to operate reliably across a wide range. A sample-and-hold phase detector is also described that combines the advantages of linear and nonlinear phase detectors. The recovered clock exhibits an rms jitter of 10.8 ps for a PRBS sequence of length 2⁷-1 and a phase noise of -80 dBc/Hz at a 5-MHz offset. The core circuit dissipates a total power of 33.5 mW from a 3.3-V supply and occupies an area of 0.8×0.4 mm²     

43 Gb/s decision circuits in InP DHBT technology

Packaged master-slave D-flip-flops designed in InP DHBT technology with 150 GHz f/sub t/ and 180 GHz f/sub max/ are presented. Measurement results using a 43.2 Gb/s nonreturn to zero (NRZ), pseudo random binary sequence (PRBS) data (generated from 4 channels of 10.8 Gb/s, 2/sup 31/-1, PRBS data) and a 43.2 GHz clock, show a clock phase margin of 190/spl deg/. 2:1 Static frequency dividers designed using the D-flip-flops have been tested up to 50 GHz and show normal operation. These circuits are key building blocks in numerous front-end circuits used for 40 Gb/s optical communication systems.     

Silicon bipolar IC for PRBS testing generates adjustable bit ratesup to 25 Gbit/s

For the first time, a completely integrated pseudo-random pattern generator providing adjustable bit rates up to at least 25 Gbit/s without additional external multiplexing is presented. The sequence length is 2ⁿ-1. The application of the monolithic Si bipolar IC serves as a single chip measurement instrument for pseudo-random binary sequence (PRBS) generation required for the characterisation and development of high-speed components used in future optical fibre communication systems. Only three external microwave components are needed for operation: a clock generator, a power divider and a phase shifter. The chip is realised in an advanced implanted base silicon bipolar technology     

Design, modeling, and characterization of monolithically integratedInP-based (1.55 μm) high-speed (24 Gb/s) p-i-n/HBT front-endphotoreceivers

High-speed, long-wavelength InAlAs/InGaAs OEIC photoreceivers based on a p-i-n/HBT shared layer integration scheme have been designed, fabricated and characterized. The p-i-n photodiodes, formed with the 6000 Å-thick InGaAs precollector layer of the HBT as the absorbing layer, exhibited a responsivity of ~0.4 A/W and a -3 dB optical bandwidth larger than 20 GHz at λ=1.55 μm. The fabricated three-stage transimpedance amplifier with a feedback resistor of 550 Ω demonstrated a transimpedance gain of 46 dBΩ and a -3 dB bandwidth of 20 GHz. The monolithically integrated photoreceiver with a 83 μm p-i-n photodiode consumed a small dc power of 35 mW and demonstrated a measured -3 dB optical bandwidth of 19.5 GHz, which is the highest reported to date for an InAlAs/InGaAs integrated front-end photoreceiver. The OEIC photoreceiver also has a measured input optical dynamic range of 20 dB. The performance of individual devices and integrated circuits was also investigated through detailed CAD-based analysis and characterization. Transient simulations, based on a HSPICE circuit model and previous measurements of eye diagrams for a NRZ 2³¹-1 pseudorandom binary sequence (PRBS), show that the OEIC photoreceiver is capable of operation up to 24 Gb/s     

A 33.6-to-33.8 Gb/s Burst-Mode CDR in 90 nm CMOS Technology

A 33.6–33.8 Gb/s burst-mode clock/data recovery circuit (BMCDR) is presented in this paper. To reduce the data jitter and generate the high-frequency output clock, the LC gated voltage-controlled oscillator is presented. To receive and transmit the broadband data, a wideband input matching circuit and a wideband data buffer are presented, respectively. The phase selector is proposed to overcome the false phase lock due to the full-rate operation. This proposed BMCDR has been fabricated in a 90 nm CMOS process. The measured peak-to-peak and rms jitters for the recovered data are 7.56 ps and 1.15 ps, respectively, for a 33.72 Gb/s, 2 $^{11} -$1 PRBS. The measured bit error rate is less than $10^{-8}$ for a 33.72 Gb/s, 2$^{7} -$1 PRBS. It consumes 73 mW without buffers from a 1.2 V supply.      

100-Gb/s 2/sup 7/-1 and 54-Gb/s 2/sup 11/-1 PRBS generators in SiGe bipolar technology

This paper presents two monolithic pseudorandom bit sequence (PRBS) generators. One circuit uses a seven-stage shift register operating with a half-rate clock and provides output signals up to 100 Gb/s. The second circuit contains an eleven-stage shift register operating with a full-rate clock up to 54 Gb/s. Both PRBS generators provide a wide range of data rates down to below 1 Gb/s simply by changing the frequency of the external clock signal without the need of any further adjustments. The integrated circuits provide a trigger output which can be switched between eye and pattern display. Furthermore, they contain additional circuitry to guarantee automatic start after power-on. The circuits are manufactured in a 200-GHz f/sub T/ SiGe bipolar technology. They each have a chip size of 900/spl times/700 /spl mu/m/sup 2/ and consume 1.5 and 1.9 W, respectively.