Polarization-electric field relations of ferroelectric/antiferroelectric layered ceramics in Pb(Nb, Zr, Sn, Ti)O3 system

Ferroelectric/antiferroelectric bi-layer ceramics with different ferroelectric and antiferroelectric phase thickness ratio (FE/AFE thickness ratio) in Pb(Nb, Zr, Sn, Ti)O₃ system were prepared and characterized. With increasing the maximum external electric field from 0 to 40 kV/cm, polarization-electric field relation was always ferroelectric-like or underwent an antiferroelectric-ferroelectric transition, depending on the FE/AFE thickness ratio. All layered ceramics showed ferroelectric-like hysteresis loops with maximum external electric field of 40 kV/cm, and much higher remanent polarizations were attained than those of the ferroelectric/antiferroelectric heterostructures reported previously.     

The electric field-induced antiferroelectric to ferroelectric phase transition in some (Pb,La)Zr0.55Ti0.45O3 ceramics

Lanthanum substituted lead zirconate-titanate (PLZT) ceramics of composition 11.1/55/45 have been studied by measuring high electric field properties. Dc bias, dielectric and P-E hysteresis loop measurements have been employed to construct an E (electric field) versus T (temperature) phase diagram. At lower temperatures and small electric fields an antiferroelectric phase with tetragonal symmetry has been found. Applying high electric fields gives rise to a field-induced phase transition from the antiferroelectric to the ferroelectric state, however, without X-ray detectable change in crystal symmetry.     

Direct current electric field adjustable phase transformation behavior in (Pb,La)(Zr,Ti)O3 antiferroelectric thick films

(Pb,La)(Zr,Ti)O₃ antiferroelectric 1.4 μm-thick films have been prepared on Pt (111)/Ti/SiO₂/Si(100) substrates by sol–gel process. The structures and dielectric properties of the antiferroelectric thick films were investigated. The films displayed pure perovskite structure with (100)-preferred orientation. The surface of the films was smooth, compact and uniform. The antiferroelectric (AFE) characterization have been demonstrated by P (polarization)-E (electric field) and C(capacitance)-V (DC bias) curves. The AFE–ferroelectric (FE) and FE-to-paraelectric (PE) phase transition were also investigated as coupling functions of temperature and direct current electric field. With the applied field increased, the temperature of AFE-to-FE phase transition decreased and the FE-to-PE phase shifted to high temperature. The AFE-to-FE phase transition was adjustable by direct current electric field. (Pb,La) (Zr,Ti) O₃ antiferroelectric films have broad application prospects in microelectromechanical systems because of the phase transition.     

Dynamical properties of the relaxor ferroelectric 0.71Pb(Ni1/3Nb2/3))O3-O.29PbTiO3 probed by Brillouin and Raman scattering

Abstract-Structural phase transitions in relaxor ferroelectric materials remain to be one of the most puzzling issues in materials science. In the present work, we have investigated relaxational and vibrational properties of a relaxor ferroelectric 0.71Pb(Ni(1/3)Nb(2/3))O(3)-O.29PbTiO(3) single crystal by means of inelastic light scattering measurements. Analysis based on the spectra has shown anomalous behaviors at Burns' temperature T(d), freezing temperature T(f) , those are related to a development of polar nanoregions (PNRs). The PNR must play a key role in the relaxor nature, and obtained results provide new insights into the relaxational dynamics in the PNRs and into how they develop below T(f).     

温度场和电场调控硅基反铁电厚膜相变电流特性研究

采用溶胶-凝胶技术,在Pt(111)/Ti/SiO2/Si衬底上制备了高(100)取向生长、表面平整且结构致密的(Pb,La)(Zr,Ti)O3反铁电厚膜,研究了温度场和电场对(Pb,La)(Zr,Ti)O3反铁电厚膜电学性能的影响。实验结果表明反铁电厚膜在温度场和电场作用下发生反铁电相、铁电相和顺电相的相互转变,随外加电场增加,反铁电-铁电相变温度逐渐减小,介电常数峰值由2410减小到662,相变电流密度值由2.21×10-7A/cm2增大到8.52×10-7 A/cm2;随外加温度场增加,反铁电-铁电相变电场强度逐渐减小,饱和极化强度由39μC/cm2减小到31μC/cm2,相变电流密度值由2.89×10-5 A/cm2减小到8.8×10-6 A/cm2,温度场和电场可实现对反铁电厚膜相变电流效应的有效调控。     

Nb3Te4单晶输运性质及磁化率测量

测定了Ｎｂ３Ｔｅ４单晶在不同磁场及电场作用下Ｒ（Ｔ）／Ｒ（３００Ｋ）－Ｔ曲线，发现磁场对高温Ｐｅｉｅｒｌｓ相变的回滞有“压缩”作用，电场对高温Ｐｅｉｅｒｌｓ相变温度的加滞有“加宽”作用，另外，测量磁化率时还发现，Ｔ〈５０Ｋ时，晶体出现抗磁信号。     

Interpretation of T(m) and T* in relaxor ferroelectric 0.93Pb(Zn₁/₃Nb₂/₃)O₃-0.07PbTiO₃

The dielectric property of relaxor ferroelectric 0.93Pb(Zn?/?Nb?/?)O?-0.07PbTiO? single crystals (PZN-0.07PT) is studied to investigate the ferroelectric phase transition. The temperature dependence of the susceptibility of the central peak in the light scattering shows a very similar behavior to the real part of the dielectric constant, indicating that the diffuse peak in the temperature dependence of the dielectric constant is induced by relaxation of the polarization. We suggest that the origin of the relaxation above T(m) is the non-180° polarization flipping of a small polar nanoregion (PNR). Additionally, the behavior of the PNRs is interpreted through both the Brillouin spectra and high-energy synchrotron-radiation powder diffraction patterns. Our results reveal that T*~ 499K is the temperature below which the growth rate of the dynamic polarization fluctuation is suppressed by the additional random electric field induced by the generation of the static PNRs.     

PMN—PZN—PT系弛豫铁电陶瓷的介电老化

对一种满足２５Ｕ电容标准的ＰＭＺＮ陶瓷的个电老化行为特卢、进行了研究，并分析了材料组成、外电场及温度等因素对其老化行为的影响。研究发现，材料老化是由掺杂（ＭｎＯ２、ＭｇＯ）所诱导，其老化行为与正常铁电体有一定差异。     

Li改性铌钽酸钾钠无铅压电陶瓷的研究

利用固相反应法制备了(Na _0.52 K _0.48-x Li _x)(Nb _0.86 Ta _0.10 Sb _0.04)O ₃系无铅压电陶瓷, 研究了不同Li含量(x分别为0、0.02、0.04、0.06、0.08)样品的显微结构、物相组成及电性能. 结果表明, Li含量的改变对其物相组成、压电性能、铁电性能、介电性能都有显著影响. 当Li含量x从0增大到0.04时, 其压电性能相应提高, 当Li含量x超过0.04时, 压电性能明显下降; 在x=0.04时综合性能最好, 其压电常数d₃₃高达260pC/N, 介电损耗tanδ为0.027, 平面机电耦合系数k_p值达到50%, 剩余极化强度P_r为22μC·cm^-2, 矫顽电场E_c为0.95kV·mm^-1, 居里温度为316℃. 另外, 随着Li含量增加, 该系统的矫顽电场明显增强, 居里温度有所提高.     

TEM study of the disorder-order perovskite,Pb(In1/2Nb1/2)O3

A transmission electron microscopy study of the order-disorder perovskite Pb(In_1/2Nb_1/2)O₃ (PIN) has shown that its microstructures are dependent on the In: Nb B-site cation distribution. In disordered PIN the dielectric properties are those of a relaxor ferroelectric. Lowering the temperature of disordered PIN by means of a liquid nitrogen-cooled stage has been found to stabilize polar ferroelectric micro-domains, 20 to 30 nm in size. On increasing the long range order of the B-site cations to give ordered domains > 80 nm in size, an antiferroelectric phase is shown to develop that is isostructural with the antiferroelectric perovskite, PbZrO₃. Coexisting antiferroelectric and non-antiferroelectric regions have been observed in partially ordered PIN.     

Ta含量对高性能镍基粉末高温合金高温拉伸性能的影响

使用光学显微镜(OM)、扫描电镜(SEM)、透射电镜(TEM)和高温拉伸试验机等手段系统地研究了不同Ta含量FGH98合金的显微组织和高温拉伸性能。结果表明：添加Ta可明显消除原始粉末颗粒的边界(PPB,Prior Particle Boundary),促进二次γ′相形态失稳和三次γ′相数量的增加。加入Ta使合金的高温抗拉强度和屈服强度都有一定程度的提高,Ta含量为2.4%(质量分数,下同)的合金塑性最好;无Ta和1.2%Ta合金的拉伸断口为结晶状断口;2.4%Ta合金的断口上有较多的等轴状韧窝,为韧性断裂;3.6%Ta和4.8%Ta合金为穿晶和沿晶解理断裂,属于典型的结晶状断口。在无Ta合金中产生大量孪晶和位错绕过γ′相发生变形,Ta的加入降低了合金的层错能,随着Ta含量的提高合金的位错剪切γ′相产生大量的层错。     

Multifilamentary superconducting (NbTa)-Sn Composite wire by solid-liquid reaction for possible application above 20 tesla

Nb alloyed with Ta was employed in fabricating multifilamentary composite wires of (NbTa)-Sn using the liquid-infiltration process. The superconducting A15 phase was formed with subsequent heat treatments at 800–950°C by the solid-liquid reaction. High inductive T_c's of 18.2K with sharp transition width (<0.3K) and high overall J_c's of ～1.6 × 10⁴ A/cm² at 20T and 4.2K were obtained. It was found that 2 wt.% Ta in the Nb was sufficient in the enhancement of the overall J_c at the high fields and in increasing the H_c2 (4.2K) to 25T.     

Microstructures and Mechanical Property of MoSi2/TSi2(T=Cr,V,Nb,Ta,Ti)Two-Phase Alloys

In order to improve the low temperature ductility and high temperature strength ofMoSi2 while keeping its superior high temperature oxidation resistance, the present work attempts to combine MoSi2with the C40 type disilicides of transition metals including Cr, V, Nb, Ta and Ti. The possibility of producing a thermally compatible composite of MoSi2 and the C40 disilicides is discussed by critical assessment of MoSi2-TSi2(T=Cr, V,Nb,Ta, Ti) pseudo-binary phase diagrams. Relative phase stability between the CIIb MoSi2 and the C40 TSi2 is investigated and lamellar MoSi2/TSi2 two-phase microstructures are obtained by appropriate choice of composition and heat-treament. Preliminary result on the microhardness of MoSi2/TSi2two-phase alloys is also discussed.     

反应射频磁控溅射法制备HfTaO薄膜的热稳定性和光学性能

采用反应射频磁控溅射技术制备HfTaO薄膜,利用X射线衍射(XRD)分析了薄膜的微结构,通过紫外-可见光分光光度计测量了薄膜的透过谱,计算了薄膜的折射率和禁带宽度,利用原子力显微镜观察了薄膜的表面形貌。结果表明,随着Ta掺入量(10%,26%,50%)的增加,HfTaO薄膜的结晶化温度分别为800、900、950℃,Ta掺入量继续增加到72%,经过950℃退火处理的HfTaO薄膜仍然保持非晶态,具有优良的热稳定性。AFM形貌分析显示非晶HfTaO薄膜表面非常平整。在550nm处薄膜折射率n随着Ta掺入量的增大而增大,n的变化区间为1.90～2.15。同时HfTaO薄膜的光学带隙Eg随着Ta掺入量的增大而逐渐减小,Eg的变化区间为4.15～5.29eV。     

Influence of Composition and Pressure on the Electric Field-Induced Antiferroelectric to Ferroelectric Phase Transformation in Lanthanum Modified Lead Zirconate Titanate Ceramics

The electric field-induced phase transformation behavior in lanthanum-doped lead zirconate titanate ceramics was examined by polarization versus electrical field (P-E) measurements carried out from room temperature to 130degC and under hydrostatic pressures from 20 to 300 MPa. The samples with composition (Pb_1-xLa_x)(Zr_0.90Ti_0.10)_1-x/4O₃ [PLZT _x/90/10; x = 2,3,4 at%] were prepared by the standard solid-state reaction method. The analysis at room temperature under atmospheric pressure showed that the increase in the lanthanum content induces a transformation from the typical ferroelectric hysteresis, observed for PLZT 2,3/90/10, to double-hysteresis loops, typical of antiferroelectric phases, for PLZT 4/90/10 under a strong electric field. Hydrostatic pressure- induced and temperature-induced ferroelectric (FE) to antiferroelectric (AFE) phase transformations were examined. The measured hysteresis loops indicated that the FE-AFE phase transformation depends on both temperature and hydrostatic pressure for PLZT 3/90/10. This composition, which is in a ferroelectric state at room temperature under atmospheric pressure, can be transformed into the antiferroelectric phase by the application of a hydrostatic pressure of 100 MPa or by increasing the temperature to around 90degC. The PLZT 2/90/10 and 4/90/10 compositions displayed predominantly ferroelectric and antiferroelectric behavior, respectively, over the ranges of temperature and hydrostatic pressure examined in the present study.     

K（Ta,Nb）O3薄膜中钙钛矿相的形成机理研究

研究了工艺参数和衬底材料对Ｋ（Ｔａ，Ｎｂ）Ｏ３薄膜生长的影响，研究表明钙钛矿相由焦绿石中间相转变而成，热处理时低速升温同样可以获得纯钙钛矿相的Ｋ（Ｔａ，Ｎｂ）Ｏ３薄膜，分析了（１００）ＳｒＴｉＯ３，（１００）ＭｇＯ单晶衬底上钙钛矿相的形成机理，并解释了在硅单晶和石英玻璃衬底上纯钙钛矿结构的Ｋ（Ｔａ，Ｎｂ）Ｏ３薄膜不易形成的原因。     

Lead‐Free Antiferroelectric Silver Niobate Tantalate with High Energy Storage Performance

Antiferroelectric materials that display double ferroelectric hysteresis loops are receiving increasing attention for their superior energy storage density compared to their ferroelectric counterparts. Despite the good properties obtained in antiferroelectric La‐doped Pb(Zr,Ti)O₃‐based ceramics, lead‐free alternatives are highly desired due to the environmental concerns, and AgNbO₃ has been highlighted as a ferrielectric/antiferroelectric perovskite for energy storage applications. Enhanced energy storage performance, with recoverable energy density of 4.2 J cm^?3 and high thermal stability of the energy storage density (with minimal variation of ≤±5%) over 20–120 °C, can be achieved in Ta‐modified AgNbO₃ ceramics. It is revealed that the incorporation of Ta to the Nb site can enhance the antiferroelectricity because of the reduced polarizability of B‐site cations, which is confirmed by the polarization hysteresis, dielectric tunability, and selected‐area electron diffraction measurements. Additionally, Ta addition in AgNbO₃ leads to decreased grain size and increased bulk density, increasing the dielectric breakdown strength, up to 240 kV cm^?1 versus 175 kV cm^?1 for the pure counterpart, together with the enhanced antiferroelectricity, accounting for the high energy storage density.     

Superconductivity at 4 K in Pd-Deficient Layered Ta2Pd x S6

In the present short letter, we report on the low dimensional 4d and 5d transition metals-chalcogenide based compounds i.e., Ta2PdxS6, showing semiconducting to superconducting transition at around 4K with their upper critical fields outside the Pauli paramagnetic limit. It seems couple of different superconducting phases do exist in these new set of compounds. Our short letter in this regards is thought provoking, asking to explore various unearthed possible new superconducting phases in (Nb/Ta)2Pdx(S/Se/Te)y systems.     

Abnormal electrocaloric effect of Na0.5Bi0.5TiO3–BaTiO3 lead-free ferroelectric ceramics above room temperature

We demonstrate the electrocaloric effect (ECE) of Na_0.5Bi_0.5TiO₃–BaTiO₃ (NBT–BT) lead-free ferroelectric ceramics, which were fabricated by the solid-state reaction method. Based on a Maxwell relation, the ECE was characterized via P–T curves under different electric fields. The polarization of NBT increases monotonically within the temperature range of 25–145 °C. It indicates that the NBT has an abnormal ECE with a negative temperature change (ΔT₁₄₀ = −0.33 K at E = 50 kV/cm) opposite to that of the normal ferroelectrics. The 0.92NBT–0.08BT composition near the morphotropic phase boundary has a normal ECE under low electric fields and an abnormal ECE under high electric fields. The abnormal ECE character originates from the relaxor characteristic between ferroelectric and antiferroelectric phases, while the common ECE is always related to the normal ferroelectric–paraelectric phase transition.     

Dielectric characterization of BaTiO3-BaM1/3N2/3 O3 systems (with M=Co,Mg and N=Nb or Ta)

The dielectric behaviour of (1–x)BaTiO₃–x BaM_1/3N_2/3O₃ systems, in which M=Co, Mg and N=Nb, Ta is described whenx varies from 0 to 0.1. The evolution of the Curie temperature and of the dielectric constant, either in the ferroelectric state or in the paraelectric state are correlated to the structure and the ceramic microstructure. An observed diffuse phase transition is discussed.