发射极开关晶闸管正向特性分析

本文在对发射极开关晶闸管ＥＳＴ正向特性二维数值分析的基础上，提出了ＥＳＴ正向工作时的五个区域，从剖面图及等效电路图出发，分区、分阶段对其正向特性进行了解析分析，最后将实验结果、解析分析结果及数值分析结果进行比较，发现数值分析结果和解析分析结果吻合较好，同时说明了解析结果和实验结果之间存在差别的原因。     

THE OUTPUT OPTICAL FIELD INTENSITY DISTRIBUTION FORMED BY AN OPTICAL FIBER END

ＴＨＥＯＵＴＰＵＴＯＰＴＩＣＡＬＦＩＥＬＤＩＮＴＥＮＳＩＴＹＤＩＳＴＲＩＢＵＴＩＯＮＦＯＲＭＥＤＢＹＡＮＯＰＴＩＣＡＬＦＩＢＥＲＥＮＤ￥ＹＵＡＮＬｉ－Ｂｏ（Ｄｅｐａｒｔｍｅｎｔｏｆｐｈｙｓｉｃｓ，ＨａｒｂｉｎＥｎｇｉｎｅｅｒｉｎｇＵｎｉｖｅｒｓｉｔｙ...     

DNW - A100P的综合应用

1　基本原理ＤＮＷ-Ａ100Ｐ属新型盘带结合式编辑机。简单地说,就是将3台录放像机结合于一体,组成一互编系统。(1)节目硬盘录放机(ＤＩＳＫＰＲＯＧＲＡＭ);(2)素材硬盘录放机(ＤＩＳＫＭＡＲＳＴＥＲ);(3)磁带录放像机(ＶＩＤＥＯＴＡＰＥＲＥＣＯＲＤＥＲ)。2　指定放机与录机编辑前,首先要指定放机与录机后才能作编辑工作。方法:(1)指定放机同时按ＰＬＡＹＥＲ Ａ或ＥＸＴ(2)指定录机同时按ＲＥＣＯＲＤＥＲ Ａ注:①Ａ指ＤＩＳＫＰＲＯＧＲＡＭ、ＤＩＳＫＭＡＲＳＴＥＲ、ＴＡＰＥ中的任意一种。②指定好录机与放机后,如果录机与放机显示…     

TELECAST数字广播音频系统及设备技术性能特点简介

音频广播的发展经历了由使用模拟技术到使用数字技术的质的飞跃 ,数字化、智能化、网络化是新型广播电台的必然发展趋势。丹麦ＴＥＬＥＣＡＳＴ集团为广播电台提供了以光纤和计算机网络为基础的智能化的音频广播工艺网整体解决方案。我们认为 ,ＴＥＬＥＣＡＳＴ集团的系统代表了广播电台中心技术最新的发展 ,为广播电台的节目录制、播控系统带来了令人耳目一新的变革。ＴＥＬＥＣＡＳＴ集团由ＳＡＮ ＤＡＲ、ＳＥＥＭＡＵＤＩＯ、ＮＴＰ三家子公司组成 :ＳＡＮＤＡＲ是做视频切换系统的公司 ,ＳＥＥＭＡＵ ＤＩＯ主要从事数字播出、制作调音…     

关于光纤用户传输网的研究（续）

关于光纤用户传输网的研究（续）解金山，赵玉兰，桂厚义，杨邦湘（武汉邮电科学研究院４３Ｏ０７４）ＳＴＵＤＹＯＮＦＩＢＥＲＯＰＴＩＣＳＵＢＳＣＲＩＢＥＲＮＥＴＷＯＲＫ（Ｃｏｎｔｉｎｕｅｄ）￥ＸＩＥＪｉｎ－Ｓｈａｎ；ＺＨＡＯＹｕ－Ｌａｎ；ＧＵＩＨｏｕｙｉ；...     

AlGaAs－InGaP／GaAs HBT，f_T高达245GHz

ＡｌＧａＡｓ－ＩｎＧａＰ／ＧａＡｓ　ＨＢＴ，ｆ_Ｔ高达２４５ＧＨｚ《ＩＥＥＤＩＪ》１９９３年第１２期报道了一种新的ＨＢＴ，采用ＡＩＧａＡｓ－ＩｎＧａＰ发射区结构。该结构在发射极形成一个电子发射器，产生速度过冲效应。它一方面增强了发射极输运，同时减少了?..     

双基地雷达截面

该文的内容编译于“ＭＯＤＥＲＮ ＲＡＤＡＲ ＳＹＳＴＥＭ ＡＮＡＬＹＳＩＳ”中的有关章节。它对双基地雷达截面进行了专门分析。希望所编译的内容对我厂双基地产品的研制能起到参考作用。     

SAMP/T陆基中程地空导弹系统的改进

该文的内容编译于“ＩＮＴＥＲＮＡＴＩＯＮＡＬ ＤＥＦＥＮＳＥ ＤＩＧＥＳＴ”中的部分内容。它对ＳＡＭＰ／Ｔ陆基中程地空导弹系统的开发进程做了简要介绍。希望所编译的内容对了解欧洲新一代陆基中程地空导弹系统的情况能起到参考作用。     

新闻编辑室技术正不断向前发展

新闻编辑室技术正不断向前发展对于大多数新闻部主任来说，未来数字新闻编辑室仍可能是若干年之后的事，而有一些新闻部主任对新兴技术的应用却比以往任何时候都更多。美国《ＴＥＬＥＶＩＳＩＯＮＢＲＯＡＤＣＡＳＴ》随机向４００家订阅该刊的新闻部主任寄去了调查表，收...     

SDH自愈环网中高性能开关的实现方法探讨

ＩＴＵ－Ｔ与ＡＮＳＩ在ＳＤＨ／ＳＯＮＥＴ标准方面的进展，加快了世界各国在传输系统上的改造，其先进的ＯＡＭ功能可用于建立具有故障保护的自愈环网络，这种自愈环包括分插复用器。ＡＤＭ中的开关在其自愈环工作中起着重要作用。本文为确定其对ＡＤＭ开关的需要，分析了自愈环结构２与原理，以此基础上，介绍了能明显减少硬件数量的新的空分交换方法。     

Characteristics of the emitter-switched thyristor

The first experimental demonstration of 600-V emitter-switched thyristors fabricated using an IGBT (insulated-gate bipolar transistor) process sequence is reported. The forward drop is less than that for the IGBT, but larger than that for a thyristor by about 0.5 V due to the thyristor current flowing via the MOSFET channel. A unique characteristic observed for these devices, not exhibited by any previous MOS-gated thyristor structures, is gate-controlled current saturation even after thyristor latch-up. Switching tests were performed up to a current density of 1000 A/cm² on single-unit cells and the measured turn-off times were about 7 μs     

An emitter switched thyristor with base resistance control

An MOS-gated emitter-switched thyristor structure with base resistance control, which combines the best features of both the emitter-switched thyristor (EST) and the base-resistance-controlled thyristor (BRT), is reported. With this structure, it is possible to obtain turn-off (dynamic) current densities above the static latch-up current density of the parasitic thyristor in the EST, while preserving its unique current saturation capability. It has been experimentally demonstrated for 600 V forward blocking devices that the maximum controllable current density under dynamic conditions is a function of both the gate bias and the dimensions of the N⁺ floating emitter. Turn-off measurements have demonstrated that the new structure has a maximum controllable current density of over 2.5 times that for the EST structure without base resistance control     

High speed turn-on reverse conducting 4 kV static induction thyristors based on the buried gate type p-base n-emitter soft contact structure and anti-parallel diodes for solid-state power supplies in high energy accelerators

Buried gate type p-base n-emitter soft contact (PNSC) structure 4 kV static induction thyristors (SIThys) have been fabricated in order to make thyristors for high-speed turn-on applications to such as high energy accelerators. It was found that these static induction thyristors could be fabricated under the test pilot line with a good device production yield. The static characteristics and pulse switching characteristics of these static induction thyristors are examined. Several application examples of the present 4 kV static induction thyristors to power supplies for high energy accelerators are shown.     

A microprocessor-based firing circuit for thyristors working undera three-phase variable-frequency supply

A microprocessor-based firing scheme for controlling antiparallel-connected thyristors working under a three-phase variable frequency supply is presented. The firing angle is controlled by microcomputer software. The desired firing angle is given to the microprocessor and is then kept constant irrespective of supply frequency. This is achieved by measuring the frequency of one-phase (or line-to-line) voltage at every supply voltage cycle and accordingly adjusting the required time delay to get the desired firing angle for the thyristors of each phase. The required hardware is considerably reduced by using a zero-crossing detector for only the one-phase (or line-to-line) voltage of the three-phase supply. The firing instants of the thyristors connected to the other two phases are adjusted relative to the calculated instant of firing for the thyristors connected to the measured phase. The hardware and software used to implement the firing scheme are described     

The dV/dt capability of double-interdigitated (TIL) thyristors

This work presents an alternative solution, with respect to the conventional cathode-emitter shorts or MOS-controlled emitter shorts, for achieving virtual immunity to the parasitic action of displacement currents in power thyristors. The developed simple design/ technological procedure, based upon the novel double-interdigitated or two interdigitation level (TIL) gate-cathode configuration with a coarse geometry, offers a fair balance between technological simplicity/cost effectiveness and overall device performance. Based upon the developed design guidelines, two sets of gold-doped thyristors with different geometrical configurations and current-voltage handling capabilities were produced. The performed measurements have shown that both sets of TIL thyristors possess an extremely high value of the maximum permissible critical rate of rise of the off-state voltage (dV/ dt capability) even under open-gate conditions. When the gate is connected to the cathode, the TIL thyristors are practically immune to the action of displacement currents. Unlike thyristors using conventional emitter shorts, the TIL-type devices possess a good static and dynamic turn-on/latching sensitivity and have low on-state losses at high-current densities.     

A simple method for achieving immunity to internal noise signals in thyristors

The work presents an alternative solution—with respect to the conventional cathode shunts or MOS-controlled emitter shorts—for achieving virtual immunity to the parasitic action of displacement currents in power thyristors. The simple design/technological approach developed, based upon the novel double-interdigitated or two interdigitation levels (TIL) concept with a coarse geometry, offers a fair balance between technological simplicity/cost effectiveness and overall device performance.

Based upon the presented design guidelines, two sets of gold-doped thyristors with different geometrical configurations and current/voltage-handling capabilities were produced. The measurements performed on both sets of TIL-type thyristors have shown that the devices possess an extremely high value of the maximum permissible critical rate of rise of the forward anode voltage (static dV/dt capability) even under open-gate conditions. Unlike the thyristors using conventional emitter shorts, the TIL-type devices possess a good static and dynamic turn-on/latching sensitivity and have low on-state losses at high anode current densities. The main implications of developed concepts for power thyristors design/technology are also outlined in this work.     

Temperature dependence of field-controlled thyristor characteristics

The dependence of the characteristics of field-controlled thyristors upon the ambient temperature has been examined in the range of -30 to 200°C. Unlike conventional thyristors, these devices have been found to continue to exhibit forward blocking capability up to the highest measurement temperature (200°C). In fact, it is shown here that the forward blocking capability as well as the blocking gain improve with increasing temperature with the usual scaling of the leakage current for power devices. The reverse blocking capability is also retained. The forward voltage drop of the device in the conducting state decreases with increasing temperature. This behavior is shown to be similar to that of conventional rectifiers and thyristors operated at high injection levels. Further, the force gate turn-off time of the devices has been found to increase with increasing temperature. This has been correlated with a measured increase in the minority-carrier lifetime. The results of this study demonstrate that field-controlled thyristors are capable of being operated at higher temperatures than conventional thyristors.     

Effect of Gate-Drive Circuits on GTO Thyristor Characteristics

This paper deals with the effects of gate drive circuits on turn-on and turn-off characteristics of GTO thyristors. The turn-on methods are outlined and their effects on switching performance are discussed. The turn-off characteristics and the failure modes associated with the storage, fall, tailing, and avalanche periods are presented. Solutions to failure modes are outlined. Both direct and indirect gate drive circuits are presented. The effects of ideal voltage source and series insertion of gate inductance to storage, fall, tailing, and avalanche breakdown period of the GTO thyristors are studied and compared. The suitability of using certain types of gate drive circuits for certain GTO thyristors is discussed.     

Optimum design of thyristor gate—Emitter geometry

This paper describes a new method of studying the influence of the gate-emitter geometrical configuration of thyristors upon their triggering performances. This method allows, for devices of any geometrical complexity, to calculate the emitter bias voltage distribution prior to turn-on and hence to compare the behavior of these devices from a geometrical point of view. The results may be used as guide lines for the optimum design of gate-emitter configurations. As examples, precise design rules are given for standard thyristors and application to amplifying interdigited gate thyristors are outlined.