Continuous-wave frequency synthesis of a laser diode based ondiscrete-time negative frequency feedback. I. Experiment

The absolute frequency synthesis of a distributed-feedback (DFB) laser diode (LD) is demonstrated by use of a loss-compensated optical ring circuit with a frequency shifter and a frequency-stabilized master laser system containing an acetylene (¹³C₂H₂ ) absorption cell. A lightwave from the master laser is modulated into a pulse and circulated around the ring to shift its frequency in the 0~100 GHz range. A continuous-wave from the DFB LD is mixed with a recirculated pulse with a desirable reference frequency, and their beat frequency is counted in order to obtain the error signal. The absolute frequency of the DFB LD is locked to the reference frequency based on discrete-time negative frequency feedback control for the injection current. The accuracy of the absolute frequency was experimentally confirmed to be within a few MHz for an averaging time of 1 s and an operation time of 1 hour     

Theory of dynamical relaxation oscillations and frequency lockingin a synchronously-pumped laser diode

It is shown that the rate equations for the plasma density and the light intensity, together with a delayed feedback of the light in the external resonator, can be used to describe the nonlinear dynamics of actively mode-locked laser diodes. In particular, the relaxation oscillations of the laser intensity and the plasma density around the stationary pulse solutions are calculated for a laser diode in a long resonator with a periodically pulsed pump current. For small negative detuning between the round-trip period and the pump period, slow dynamical relaxation oscillations that give rise to megahertz-sidemodes in the intensity correlation spectrum occur. For larger negative detuning the delayed feedback gives rise to a frequency locking between the light pulse frequency and the modulation frequency     

Oscillation frequency, linewidth reduction and frequency modulation characteristics for a diode laser with external grating feedback

Simple analytical expressions are given for the oscillation frequency, linewidth, FM noise spectrum and frequency modulation characteristics of a diode laser with external grating feedback. The analytical expressions are found to be in good agreement with experimental results and to be useful for quantitative predictions and optimisations of the external feedback controlled diode laser performance.     

DFB semiconductor diode laser frequency stabilization employingelectronic feedback and Bragg grating Fabry-Perot interferometer

A method for stabilizing the center frequency drift of a diode laser is described. The method employs electronic feedback of the frequency error signal and utilizes an in-fiber Bragg grating Fabry-Perot interferometer as a frequency discriminator. The measured standard deviation of the frequency drift of the heterodyne beat signal of two lasers was less than 16 MHz in a time of 2.5 h     

Theory of a distributed feedback laser

This paper treats distributed feedback laser operation in which a classical electromagnetic field obeying Maxwell's equations interacts with an active medium according to the laws of quantum mechanics. The theory describes arbitrarily intense two-mode operation of fundamental and higher modes in both index and gain grating configurations. Spacial hole burning and finite atomic linewidth are included in the analysis and are shown to give marked changes in some laser intensity profiles.     

用温度控制可调谐激光器波长稳定的方法

介绍了可调谐半导体激光器在光通信领域的应用及其工作原理.重点讨论了SSG-DBR可调谐激光器的结构、工作原理,以及波长稳定控制方法.提出了一种新的基于温度反馈的波长稳定控制方法,使可调谐激光器的输出在20℃～70℃范围内的波长漂移小于1nm,边模抑制比优于5dB.该方法简单、可靠,将会对可调谐激光器在全光网络中的应用起到一定的推动作用.     

连续波可调谐CO2激光在AgGaSe2中倍频研究

在一台小型连续波(CW)CO2激光器上用光栅调谐获得了从9.23-10.65μm范围内20条谱线输出,用一片8 mm×8 mm×15 mm红外非线性光学晶体AgGaSe2实现了上述谱线的二倍频输出。实验测得10P(20)谱线的倍频光输出为2.1μW,相位匹配接收外角△θ外·L=2.1°·cm。     

采用实时功率反馈的半导体激光器幅度调制方法

针对现有半导体激光器（Laser Diode,LD）幅度调制电路具有调制幅度不稳定、调制波形存在非线性失真的缺点,提出采用实时功率反馈的幅度调制方法。通过光电二极管（Photodiode,PD）实时监测LD的输出功率,再根据LD的输出功率自动调整LD工作电流,使其输出功率随调制信号线性变化。最后根据提出的调制方法设计并实现了调制电路,实验结果表明:在温度20~40℃范围内,调制电路的-3 dB带宽达到20 MHz,调制功率的幅度稳定度优于4%,最大非线性误差为0.1%。该调制方法提高了半导体激光器的输出功率稳定性,减少了调制波形的非线性失真,拓宽了半导体激光器的线性工作范围。     

以半导体激光器线性频率调制为基础的距离测量

给出一种以频率调制连续波(FMCW)技术为基础的进行无接触、无累加误差和较大动态范围距离测量方法.由可调谐半导体激光器产生一个啁啾信号,通过测量拍信号频率计算距离.用商用GaAlAs激光器组成的测量系统的动态范围为1m,测距精度达10-3.     

Theory of the Esaki diode frequency converter

The small-signal conversion properties of an Esaki (tunnel) diode are represented by a simple two-port conductance matrix whose elements are certain coefficients of the periodic time-dependent diode conductance produced by the local oscillator (pump). Because of the negative slope in the diode I–V characteristic, arbitrarily high conversion gain is possible when certain conditions are satisfied by these coefficients.

In terms of these coefficients and other diode parameters, expressions are derived for such useful converter properties as the load conditions necessary for circuit stability, the minimum noise figure, the maximum gain-bandwidth product, the necessary conditions for a positive mixer conductance at the radio frequency (r.f.) and intermediate frequency (i.f.) ports, and the pump loading necessary for self-excitation. It is shown that under proper conditions partial noise cancellation can occur because of correlation effects arising from the nonstationarity of the shot-noise process in the pumped diode.

Most of the theoretical results are illustrated by the data obtained from a detailed numerical Fourier analysis applied to an actual high-frequency Esaki diode characteristic. These calculations show that the lowest noise figure and the highest gain-bandwidth product are obtained when the diode is biased in its negative conductance region.     

Noise characteristics of a single-mode laser diode subject to strong optical feedback

An experimental study has been performed of the relative intensity noise (RIN) of a semiconductor laser in optical feedback regimes I to V. At low bias current, a low RIN is observed with low feedback ratio, the RIN increased in the coherence collapse regime (regime IV) and decreased in regime V. The RIN in regime V is lower than that of the solitary laser. For higher bias current, a higher feedback ratio is needed for the semiconductor laser to transit from regime IV to V. The measurements are found to be in good qualitative and quantitative agreement with theoretical predictions.     

Output characterization of a frequency shifted feedback laser:theory and experiment

Frequency shifted feedback cavity (FSFC) lasers can generate continuous broadband radiation or periodic picosecond pulses. To better understand these two different regimes a passive FSFC is modeled and its output in the time and frequency domains is calculated. Calculations of the FSFC output indicate that peaks observed using a Fabry-Perot spectrum analyzer can only occur when the FSFC cavity length and intracavity frequency shift satisfy a resonance condition. Calculations also indicate that a radio frequency spectrum analysis of the intensity should show sharp peaks which are independent of the FSFC frequency shift. Additionally, pulses propagating in a FSFC are insensitive to frequency shift detunings, suggesting applications as a stable source of ultrashort laser pulses. Experimental evidence confirming these findings is reported. Results indicate that a FSFC does not support conventional laser modes     

Nonlinear dynamics of a laser diode with optical feedback systemssubject to modulation

The nonlinear dynamic behavior of a direct frequency-modulated diode laser with strong optical feedback is examined and compared to a laser diode subject to electro-optically modulated, strong optical feedback. Direct modulation is achieved by sinusoidal modulation of the diode laser injection current. Electro-optic modulation is achieved by applying a sinusoidal voltage to an intracavity phase modulating element. The output state (characterized by the output power versus time, the intensity noise spectrum and the optical frequency spectrum) for both types of modulation is dependent on the ratio of the modulation frequency to the external cavity resonant frequency, and the modulation power. A number of distinct states are observed: conventional amplitude modulation (with FM spectra); multimode, low-noise amplitude modulation; multimode, high-noise amplitude modulation; periodic limit-cycle operation; quasi-periodicity; chaos; low-frequency fluctuations; and mode-locking. There are significant differences between the direct and electro-optic frequency-modulation cases. The onset of the dynamic instability is characterized as a noisy period-one oscillation for direct modulation and a low-frequency fluctuation for intracavity electro-optic modulation. Phase portraits produced experimentally with the use of a digital phosphor oscilloscope are shown to agree well with those constructed from output power versus time data. This represents an experimental method for examining the dynamics phase portraits in real-time     

Microwave/millimeter-wave frequency subcarrier lightwavemodulations based on self-sustained pulsation of laser diode

A method of subcarrier lightwave modulation based on the self-sustained pulsation (SSP) of laser diodes is presented. The tunable microwave/millimeter-wave frequency subcarrier is generated by the laser diode itself under proper DC biases. The subcarrier is frequency-modulated when the DC bias is superimposed with a small AC signal. No external modulation is needed. A theoretical analysis based on a double-section laser diode reveals that Hopf bifurcation is the origin of SSP. Theoretical calculations also show that the modulator has the potential of generating subcarriers up to 100 GHz by proper control of the device parameters V-channeled substrate inner-stripe (VSIS) GaAlAs laser diodes were used to generate 1-7-GHz SSP subcarriers. A preliminary subcarrier multiplexing (SCM) experiment demonstrated the transmission of 1-GHz modulation and video signals on a readily FM-modulated 6.3-GHz SSP subcarrier     

采用萨尼亚克环的外腔半导体激光器无调制稳频技术

提出了一种基于相位差偏置萨尼亚克环的新型外腔半导体激光（ECDL）无调制稳频方法,采用偏振分束器（PBS）作为萨尼亚克环的输入及输出端,并利用1/4波片在环内沿相反方向传播的偏振方向互相垂直的两束光之间引入/2的相位差（）,萨尼亚克环的输出光经过起偏器可以分解得到由Rb的饱和吸收峰引起的色散相移,通过这种方法可以得到适合稳频的误差信号。相比现有的利用全内反射引入相位差（sin=0.64）的方法,色散信号放大系数sin的值可达到理论最大值,有效地提高了误差信号的强度,这种方法简单、稳健,且在原子物理实验等方面具有潜在应用。     

Equalisation of semiconductor diode laser frequency modulation with a passive network

An equalisation network has been developed that improves the direct frequency modulation performance of GaAlAs semiconductor diode lasers. At modulation frequencies below 10 MHz, thermal modulation of the diode laser active region causes an enhanced frequency modulation response. A passive network has been developed which shapes the injection current modulation waveform to suppress the low-frequency enhancement.     

Pure frequency modulation of a multielectrodedistributed-Bragg-reflector (DBR) laser diode

Intensity-modulation suppressed frequency modulation (FM) is demonstrated over a 600-MHz bandwidth by using a three-electrode distributed-Bragg-reflector (DBR) laser diode (LD). A nonuniform carrier-density distribution in the active region is realized by two separated electrodes, whose push-pull modulation yields only a 0.7% intensity fluctuation per 1-GHz frequency deviation. This corresponds to a 20-dB FM purity improvement. A third electrode on the DBR region makes it possible to tune the wavelength simultaneously. Because of its wider modulation bandwidth, the LD is suitable for the lightwave oscillator in frequency-shift-keyed (FSK) transmissions and for linewidth reduction by electrical feedback     

Coherent FSK transmitter using a negative feedback stabilised semiconductor laser

An electrical negative frequency feedback scheme is applied to a semiconductor laser to improve its direct frequency modulation performance in an FSK transmitter. An error signal caused by imperfect FM response is extracted through heterodyne discrimination detection with a stable master laser and fed back to the FM semiconductor laser.     

Low frequency characteristics of a quasioptical Schottky diode detector part I: Theory

A theoretical study is made of saturation effects of FIR point contacts Schottky diodes when used in the envelope detection mode of operation. A model is described that fits experimental results for radiation wavelength ranging from microwaves down to FIR wavelengths. This model permits the prediction of saturation levels throughout this range.