Magnetic properties and structure of Ni80Fe20/Ni48Fe12Cr40 bilayer films deposited on SiO2/Si（100） by electron beam evaporation

Ni80Fe20/Ni48Fe12Cr40 bilayer films and Ni80Fe20 monolayer films were deposited at room temperature on SiO2/Si（100） substrates by electron beam evaporation. The influence of the thickness of the Ni48Fe12Cr40 underlayer on the structure, magnetization, and magnetoresistance of the Ni80Fe20/Ni48Fe12Cr40 bilayer film was investigated. The thickness of the Ni48Fe12Cr40 layer varied from about 1 nm to 18 nm while the Ni80Fe20 layer thickness was fixed at 45 nm. For the as-deposited bilayer films the introducing of the Ni48Fe12Cr40 underlayer promotes both the （111） texture and grain growth in the Ni80Fe20 layer. The Ni48Fe12Cr40 underlayer has no significant influence on the magnetic moment of the Ni80Fe20/Ni48Fe12Cr40 bilayer film. However, the coercivity of the bilayer film changes with the thickness of the Ni48Fe12Cr40 undedayer. The optimum thickness of the Ni48Fe12Cr40 underlayer for improving the anisotropic magnetoresistance effect of the Ni80Fe20/Ni48Fe12Cr40 bilayer film is about 5 nm. With a decrease in temperature from 300 K to 81 K, the anisotropic magnetoresistance ratio of the Ni80Fe20 （45 nm）/Ni48Fe12Cr40 （5 nm） bilayer film increases linearly from 2.1% to 4.8% compared with that of the Ni80Fe20 monolayer film from 1.7% to 4.0%.     

PREPARATION AND STRVCTURAL EVOLUTION OF TiO_2 THIN FILMS BY LOW PRESSURE MOCVD

1. IntroductionTitanium dioxide (TiO2) films are widely used for electrical and optical applications because of its high dielectric constant, its chemical stability and its high refractive i.de.[1--2].Tioz thin films can be prepared by various thin film deposition techniquesl3--8]. Amongthese techniques, chemical vapor deposition (CVD) is considered as a useful method to deposit high quality thin films with large area uniformity and well--controlled stoichiometry.Crystalline TiOZ exists th…     

钛酸铋薄膜的磁控溅射及其退火处理

采用射频磁控溅射技术,在Pt/Ti/SiO2/Si衬底上制备了钛酸铋(Bi4Ti3O12,简称BIT)薄膜。研究了衬底温度及后续退火处理对薄膜结构和表面形貌的影响。结果表明:适宜的衬底温度为200℃。随着退火温度(650~800℃)的升高,BIT薄膜的结晶性变好,晶粒尺寸增大,c轴取向增强。当退火温度达到850℃时,开始出现焦绿石相;700~800℃为适宜的退火温度,在此条件下得到的BIT薄膜结晶良好,尺寸均匀,表面平整致密。     

Effects of substrate temperature and annealing treatment on the microstructure and magnetic characteristics of TbDyFe films

A series of TbDyFe films were prepared by DC magnetron sputtering. The effects of substrate temperature and annealing temperature on the phase structure and the magnetic properties of the sample films were investigated. The an-nealing treatment has a significant influence on the microstructure and the magnetic properties of the sample. The results obtained by XRD indicate that the films deposited at a temperature lower than 525℃ are amorphous and have an easy magnetization direction perpendicular to the film plane. An RFe2 phase is formed in the sample annealed at 550℃ and the residual phases observed are Fe and rare earth oxide. The magnetic properties Hc and Mr/Ms of the film annealed at 550℃ obtain the maximum values,for which the formation of the RFe2 phase is mainly responsible. An annealing treatment leads to a rotation of the sample’s easy axis from being parallel to the film surface to becoming vertical.     

Pr掺杂对(Fe_(100-x)Co_x)/Cu多层膜GMR及电磁性能的影响

采用直流磁控溅射法制备Pr_x(Fe_(100-x)Co_x)_(100-x)/Cu多层膜,X射线衍射实验结果表明,稀土元素Pr有促进FeCo、Cu的相分离的作用,热处理提高了薄膜的结晶度;巨磁电阻(GMR)效应测量结果表明,在同样的退火温度下,随着Pr掺杂含量的增加,薄膜的GMR值呈急速下降趋势;随着退火温度的升高,样品的巨磁电阻效应GMR呈现出先增后减小的趋势。随着退火温度的升高,样品的矫顽力随之升高,并可在在550℃时达到4.0437×10~4A/m。     

退火温度对锗薄膜光学性能和表面结构的影响

研究了退火温度对电子束蒸发制备的锗薄膜光学性能和表面结构的影响规律.在硅基底上制备了厚度约850 nm的Ge薄膜,分别在350、400、450和500℃下进行退火.通过红外光谱仪测试了薄膜的透射率变化,采用光谱反演法得到了薄膜折射率和消光系数的变化规律,使用X射线衍射和原子力显微镜测试了样品的结晶特性和表面形貌.结果 ...     

Study of magnetic and magneto-optical properties of heavily doped bismuth substitute yttrium iron garnet (Bi:YIG) film

The magnetic and magneto-optical properties of heavily doped Bi:YIG film were studied. The film was deposited by radio frequency magnetron sputtering method and crystallized by rapid recurrent thermal annealing (RRTA). The results show that the RRTA treated film has good properties both in microwave and optical wave band. The saturation magnetization of the film on different substrates varies from 135.7 to 138.6 kA·m -1 . The coercive field of the film on GGG substrate is about 0.32 kA·m -1 , while about 0.8-1.43 kA·m -1 on YAG substrate and 1.75 kA·m-1 on Al2O3 substrate. The Faraday angle is about 3-5 (°)·um-1 when optical wavelength ranges at 450-600 nm. The transmission spectra of the Bi:YIG films on three substrates has similar change as annealing temperature below 800 ℃. Specially, when annealing temperature is above 800 ℃ a step is observed between 550 and 650 nm wavelength for the film deposited on Al2O3 substrate.Three results are very useful in magneto-optical recording application and integrated microwave devices.     

Induced effects of Cu underlayer on（111） orientation of Fe50 Mn50 thin films

Effects of Cu underlayer on the structure of Fe50 Mn50 films were studied. Samples with a structure of Fe50 Mn50 (200 nm)/Cu(tcu) were prepared by rnagnetron sputtering on thermally oxidized silicon substrates at room temperature. The thickness of Cu underlayer varied from 0 to 60 nm in the intervals of 10 nm. High-vacuum annealing treatments, at different temperatures of 200, 300 and 400℃ for 1 h, respectively, on the Fe50Mn50 (200 nm)/Cu(20 nm) thin films were performed. The surface morphologies and textures of the samples were measured by field emission scan electronic microscope (FE-SEM) and X-ray diffraction(XRD). Energy dispersive X-ray spectroscopy (EDX) and Auger electron spectroscopy(AES) were used to analyze the compositional distribution. It is found that Cu underlayer has an obvious induce effect on (111) orientation of Fe50 Mn50 thin films. The induce effects of Cu on (111) orientation of Fe50 Mn50 changed with the increase of Cu layer thickness and the best effect was obtained at the Cu layer thickness of 20 nm. High-vacuum annealing treatments cause the migration of Mn atoms towards surface of the film and interface between Cu layer and substrate. With the increasing annealing temperature, migration of Mn atoms is more obvious, which leads to a Fe-riched Fe-Mn alloy film.     

Fe88Zr7B4Co1软磁纳米晶薄带的巨磁阻抗效应

利用熔旋快淬技术在铜辊速度为40 m/s的条件下制备了Fe88Zr7B4Co1薄带,分别经550、600、650、700、725、750℃退火处理30 min,形成纳米晶薄带.研究了退火温度、外磁场和驱动电流频率对巨磁阻抗效应的影响.发现存在一个最佳退火温度650℃.其bcc α-Fe相的晶粒尺寸为11.3 nm,在此温度下制备的Fe88 Zr7 B4 Co1纳米晶薄带具有最强的巨磁阻抗效应:在H=90 Oe下,频率约为1 MHz时Fe88Zr7B4Co1纳米晶薄带的磁阻抗△Z/Z0达到-52%.Fe88Zr7B4Co1纳米晶薄带具有比未掺杂的Fe88Zr7B4更强的巨磁阻抗效应.     

Annealing effects on microstructure and properties of Ta-Al thin film resistors

The Ta-Al thin film resistor has been used as a heating element of the thermal bubble inkjet printhead with several millions of thermal cycle operations between room temperature and about 350 °C. In this paper, the thermal stability of Ta-Al alloy films was investigated by the variation of phase transformation, microstructure and resistivity at annealing temperatures of 450-650 °C for 1 h. Three kinds of Ta-Al films were prepared with average Ta/Al atomic composition ratios of about 2/1, 1/1 and 1/2, respectively. The Ta-Al film with composition ratio of about 1/1 exhibits amorphous-like microstructure with nanocrystalline grains embedded in an amorphous matrix. The thermal stability is strongly related to the composition and microstructure in Ta-Al alloy. The best thermal stability of Ta-Al films occurs in Ta-rich alloy up to 650 °C and the worst occurs in Al-rich alloy with phase transformation as low as 450 °C. The amorphous-like Ta-Al alloy is stable up to 550 °C, but then exhibits polycrystalline multiphase formation at 650 °C. The resistivity of Ta-Al films is also related to the annealing temperature. The resistivity of Ta-rich Ta-Al film increases to about 13.5% from as-deposited to after annealing at 450 °C while that is doubled in the Al-rich Ta-Al film. In contrast, the resistivity of the amorphous-like Ta-Al film increased by about 6.1% at 450 °C and then remains nearly stable at 1.5% variation on annealing at 450-550 °C. The as-deposited amorphous-like Ta-Al film has the merits of high resistivity, smooth morphology and good thermal stability at annealing temperatures of up to 550 °C. These attributes are beneficial for the thermal bubble inkjet application with thermal cycling at maximum temperatures below 400 °C.     

退火温度对Mo薄膜微观结构及形貌的影响

采用直流磁控溅射技术,制备了厚度为3.8μm的Mo薄膜,并对其在不同温度下进行了退火处理。采用白光干涉仪和SEM对Mo薄膜进行了表征,讨论了不同温度对薄膜表面形貌的影响;利用XRD对Mo薄膜的结构进行了分析。结果表明:随着退火温度由450℃升高到1 050℃,晶粒平均尺寸逐渐增大,微曲应力呈减小趋势;在温度高于900℃时,薄膜发生再结晶,同时表面有微裂缝及大量气孔出现;薄膜的表面粗糙度随退火温度的升高有逐步增大的趋势。     

High orientation Al films growth on LiNbO3 single crystal and its adhesion

High orientation Al films were deposited on 64°Y-XLiNbO3 substrate by DC magnetron sputtering and the influence of deposition temperature on microstructure and adhesion properties of Al films were investigated. The results show that crystallographic orientation of films varies with substrate temperature and the adhesion strength between LiNbO3 and Al films strongly depends on crystallographic orientation of Al films. The (111) orientated Al films shows stronger adhesion strength to LiNbO3 substrate than (100) orientated films. There is an optimum substrate temperature of 60 ℃ and hardening temperature of 200 ℃ for obtaining high (111) orientated Al films with good surface structure and adhesion property. Using this Al film, we have successfully fabricated the SAW filters with high frequency of about 1.89 GHz.     

Effects of Annealing Temperature on the Structural,Optical,and Electrical Properties of ZnO Thin Films Grown on n-Si<100>Substrates by the Sol–Gel Spin Coating Method

The effects of annealing temperature on the sol–gel-derived ZnO thin films deposited on n-Sh100 i substrates by sol–gel spin coating method have been studied in this paper.The structural,optical,and electrical properties of ZnO thin films annealed at 450,550,and 650 °C in the Ar gas atmosphere have been investigated in a systematic way.The XRD analysis shows a polycrystalline nature of the films at all three annealing temperatures.Further,the crystallite size is observed to be increased with the annealing temperature,whereas the positions of various peaks in the XRD spectra are found to be red-shifted with the temperature.The surface morphology studied through the scanning electron microscopy measurements shows a uniform distribution of ZnO nanoparticles over the entire Si substrates of enhanced grain sizes with the annealing temperature.Optical properties investigated by photoluminescence spectroscopy shows an optical band gap varying in the range of 3.28–3.15 eV as annealing temperature is increased from 450 to 650 °C,respectively.The fourpoint probe measurement shows a decrease in resistivity from 2:1 10 2to 8:1 10 4X cm with the increased temperature from 450 to 650 °C.The study could be useful for studying the sol–gel-derived ZnO thin film-based devices for various electronic,optoelectronic,and gas sensing applications.     

Effect of annealing temperature on structure and electrochemical properties of LiCoO2 cathode thin films

LiCoO2 thin films, which can be used as a cathode material in microbatteries, were deposited using radio frequency (r.f.) magnetron sputtering system from a LiCoO2 target and in an O2+Ar atmosphere.The films were characterized by various methods such as XRD, SEM and AFM.The LiCoO2 films were annealed in air at 300, 500, 700 and 800 ℃ respectively.The effect of the annealing temperature on the structure, the surface morphology and the electrochemical properties of the films were investigated.The LiCoO2 thin film deposited at room temperature is amorphous and has smaller grain size.With increasing of annealing temperature, the crystallinity of the films is promoted.When the annealing temperature increases to 700 ℃, the films have a perfect crystalline LiCoO2 phase.The LiCoO2 thin film without annealing has no discharge plateau and small discharge capacity (about 27 μAh·cm-2μm).The discharge capacity increases with the increasing of annealing temperature and reaches 47 μAh·cm-2μm for the film annealed with 700 ℃, which also shows the typical discharge plateau of 3.9 V.The cycle performance of LiCoO2 thin films of as grown and annealed at different temperatures were studied.In the case of the film without thermal treatment, the capacity fading is much faster than that of the film annealed at different temperature, showing about 40% capacity loss only after 25 cycles.However, in the case of the film annealed at 700 ℃, the capacity reaches to steady state gradually and maintained constantly with cycling.After 25 times cycling, the discharge capacity of the film annealed at 700 ℃ decreases to about 36.9 μAh·cm-2·μm, only 0.8% capacity loss per cycle.     

退火、稀土Pr对Prx(Co40Ag60)100-x颗粒膜的结构与巨磁电阻效应的影响

采用磁控溅射法制备Prx(Co40Ag60)100-x颗粒膜。X射线衍射实验结果表明:稀土元素Pr有促进薄膜中溶于Ag中的Co发生相分离的作用,并且在退火过程Ag颗粒的聚集生长具有(111)轴择优取向的颗粒膜;巨磁电阻(GMR)效应测量结果表明:当退火温度小于或等于250℃时,随着Pr含量的增加,薄膜的GMR值先升后降,其峰值出现在x=0.5～1.0处。适量的Pr元素能够增强GMR效应以及提高GMR效应对磁场的灵敏度,GMR效应以及灵敏度的最大值分别为:-14.34%和0.67×10-3(A/m)-1。     

溅射气压对ZnO透明导电薄膜光电性能的影响

采用射频磁控溅射方法,在普通玻璃上制备了具有高度c轴取向的ZnO薄膜,研究了溅射气压(0.2～1.5 Pa)对ZnO薄膜的微观结构和光电性能的影响.AFM、XRD、UV-Vis分光光度计及四探针法研究表明:随着溅射气压的增大,ZnO薄膜沿c轴方向的结晶质量提高,晶粒细化,薄膜表面更加致密,晶粒大小更加均匀;ZnO薄膜在400～900nm范围内的平均透过率均高于85%,其中在0.5～1.5 Pa范围内其透过率高于90%;样品在高纯氮气气氛中经350 ℃,300 s退火后,电阻率最低达到10-2 Ω-cm量级.     

The effect of multilayer structure on magnetic properties of FePt thin films

The Fe/Pt multilayer films with different structures were deposited by RF magnetron sputtering on glass substrates, and the L1₀-FePt films were obtained after theas-deposited samples were subjected to vacuum annealing at various temperatures. Results show that the Fe/Pt multilayer structure can effectively reduce the ordering temperature of FePt film, and the in-plane coercivity of [Fe (5.2 nm)/Pt (5.2 nm)]₇ multilayers can reach 161.2 kA/m after annealed at 350 ℃ for 30 min. When Fe and Pt layer thickness is equal, the coercivity of the film is the largest. On the other hand, the different Fe-Pt crystalline phases such as Fe₃Pt and FePt₃ phases are formed after annealing when the thickness ratio of Fe/Pt deviates from 1 after annealing. When Fe and Pt have the same thickness, the thinner single layer gets the lower ordering temperature and the larger coercivity.     

再结晶退火温度对高强IF钢组织性能及织构的影响

研究了退火温度对高强IF钢组织性能及再结晶织构的影响。结果表明,随着退火温度的升高,铁素体晶粒长大,IF钢的抗拉强度下降,伸长率先增大后减小,r值逐渐增大;退火后表现为较强的{111}<110>和{111}<112>γ纤维织构,且强点集中在{111}<112>取向,退火温度为840℃时该两取向织构密度值均较大且相差较小。     

冷轧方式和退火温度对Al-4Cu-0.73Mg合金织构和微观组织的影响

采用硬度测试、X射线衍射(XRD)、电子背散射衍射(EBSD)等方法研究了单向轧制、交叉轧制和退火温度对Al-4Cu-0.73Mg(wt%)合金织构演变和微观组织的影响。结果表明:单向轧制试样在100~300 ℃退火保温1 h后显示出明显的Copper织构{112} <111>、S织构{123} <634>和Brass织构{011}<211>,而交叉轧制试样表现出强烈的Brass织构和H织构{011}<755>。当退火温度高于300 ℃,单向轧制和交叉轧制试样中的变形织构逐渐沿α取向线转变为由P织构{011}<001>、L织构{011}<011>、E织构{111}<110>和R织构{124}<211>等组成的再结晶织构。单向轧制和交叉轧制试样的晶粒尺寸随退火温度的升高先增加后减小,均在350 ℃退火1 h后有最大晶粒尺寸,分别约为8.2 μm和11.5 μm。单向轧制和交叉轧制试样均在冷轧后硬度值最高,约为108 HV,之后硬度值随退火温度的升高而逐渐下降,两种轧制试样的硬度值最终均稳定在50 HV左右。总体来看,轧制方式对试样织构的影响比对力学性能的影响大。     

GROWTH OF β-SiC BY rf SPUTTERING ON SILICON SUBSTRATES

1. IlltroductiollSili(.oll t.arbide (SiC) llas beell il1vestigated as a nlaterial with great poteIltial il1 high-p()xxer. high teulperature. and high-f1equel1c} devices, sil1ce it has feat[tres of high break-(l()ttll voltage, l1igll satllratioll t.elocit}…