掺杂对铁酸铋薄膜漏电流及铁电性的影响

铁酸铋是目前最为重要的室温单相多铁性材料,其禁带宽度较小,具有较大的剩余极化强度与较高的铁电居里温度,在铁电随机存储器、光电器件等领域有着极佳的应用前景。但铁酸铋薄膜因Bi3+挥发和Fe3+的部分还原,易产生较大漏电流而制约了其实际应用。对铁酸铋薄膜进行掺杂,是改善其电性能的一种有效手段。围绕如何通过铁酸铋薄膜A位和B位掺杂来减少Bi3+挥发和抑制Fe3+还原,从引入掺杂离子后发生的缺陷反应和微结构变化等方面,对国内外近年来关于铁酸铋薄膜电性能掺杂改性的系列工作进行综述。阐述了A位镧系和碱土金属离子、B位过渡金属离子、A/B位离子共掺对铁酸铋薄膜微结构、漏电流及铁电性等方面的改性研究进展。对改性效果进行了比较,并从缺陷反应、薄膜晶体结构和表面形貌等方面对改性机理进行了详细介绍。此外,还提出了亟待解决的问题。     

铁酸铋薄膜的溶胶-凝胶法制备及电性能研究进展

铁酸铋是唯一一种在室温下存在的单相多铁材料,因其具有较高的铁电居里温度、较大的剩余极化强度、较小的禁带宽度和多铁特性,受到国内外的广泛关注。溶胶-凝胶法是制备铁酸铋薄膜的一种常见方法。综述了近年来溶胶-凝胶法制备铁酸铋薄膜的研究进展,详细阐述了制备工艺参数(前驱液、退火温度、退火气氛、底电极)与掺杂对铁酸铋薄膜电性能的影响;分析了不同制备工艺导致薄膜电性能出现差异的原因;归纳、总结出了目前溶胶-凝胶法制备铁酸铋薄膜的较佳工艺条件;最后,指出了亟待解决的问题。     

热解温度对镧、锰共掺杂铁酸铋薄膜铁电性能的影响(英文)

在不同热解温度下,采用溶胶-凝胶法在Pt/Ti/SiO2/Si衬底上制备镧、锰共掺杂铁酸铋铁电薄膜Bi0.9La0.1Fe0.95Mn0.05O3(BLFMO)。利用热失重仪(TGA)分析BLFMO原粉的质量损失,用 X 射线衍射仪(XRD)和原子力显微镜(AFM)分析 BLFMO 薄膜的晶体结构和表面形貌。在热解温度为420℃时,得到BLMFO薄膜的剩余极化值为21.2μC/cm2,矫顽场为99 kV/cm,漏电流密度为7.1×10-3 A/cm2,说明薄膜在此热解温度下具有较好的铁电性能。     

铁酸铋薄膜光伏效应研究进展

铁酸铋是目前唯一在室温下同时具有铁电性和反铁磁性的单相多铁性材料,并且这两种铁性有序之间存在磁电耦合效应,其铁电居里温度和反铁磁奈尔温度都远在室温以上,在光电器件、自旋电子器件、铁电随机存储器、磁电存储单元等领域有着广阔的应用前景。此外,作为一种典型的铁电材料,铁酸铋还具有较大的剩余极化强度、相对较小的带隙宽度以及较大的光吸收系数,理论上具有较大的光电转换效率,有望成为下一代太阳能光伏电池的备选材料。然而,目前有关铁酸铋材料光伏效应的机制还没有明确的定论,影响其光伏效应的因素较多,例如电畴、界面、厚度、退极化场、缺陷及极化强度等。欲提高铁酸铋材料的光电转换效率,许多问题亟待解决。综述了近几年来国内外关于铁酸铋薄膜光伏效应机制方面的研究。     

铁酸铋薄膜退火工艺研究进展

铁酸铋(BFO)多铁性材料因具有丰富的物理性能,以及其在存储器、传感器、电容器、光伏器件等方面的广阔应用前景,在过去几十年一直受到广泛的关注。然而,由于Bi元素在高温下容易挥发,所以很难合成纯相的BFO薄膜。此外,因存在氧空位或由于Fe离子变价导致的非化学计量比等缺陷,使其漏电流密度较大,严重影响BFO薄膜的铁电性能及实际应用。退火工艺是影响材料微结构及宏观性能的重要因素,因此通过退火工艺来调控BFO薄膜的结构及性能是一种十分有效的手段。然而,退火工艺包括退火时间、退火气氛、退火温度以及退火方式等多种形式,究竟每一种退火形式如何影响BFO薄膜的结构及性能是值得探讨的问题。为此,综述了退火工艺(括退火时间、退火气氛、退火温度以及退火方式)对BFO薄膜的结构(晶粒尺寸、形状,电畴尺寸、类型,表面形貌)和性能(磁性、铁电性、介电性、漏电性、导电机制)的影响的研究进展,并提出了一些亟待解决的问题。     

元素掺杂对BiFeO_3铁磁电材料性能影响的研究进展

BiFeO3是一种室温下同时具有铁磁性和铁电性的铁磁电材料,在新型存储器件和自旋电子器件方面都有着潜在的应用前景而受到广泛的关注。本文综述了不同元素掺杂对BiFeO3铁磁电材料性能影响,并展望了BiFeO3铁磁电材料今后的研究和发展趋势。     

Er~(3+)掺杂位置对Er~(3+):BaTiO_3薄膜上转换发光的影响(英文)

采用溶胶-凝胶法在LaNiO3/Si衬底上制备Er3+掺杂BaTiO3薄膜。通过XRD、AFM和PL图谱分别研究薄膜的晶体结构、形貌以及上转换发光性能。结果表明,薄膜的微观结构和发光性能与Er3+掺杂晶格的位置有关。A位掺杂薄膜较B位掺杂薄膜具有较小的晶格常数和较好的结晶。PL光谱表明:A位掺杂的薄膜和B位掺杂的薄膜都于528nm和548nm处获得较强的绿色上转换发光以及在673nm处获得较弱的红光,分别对应Er3+离子的2H11/2→4I15/2,4S3/2→4I15/2和4F9/2→4I15/2能级跃迁。相对于B位掺杂的薄膜,A位掺杂样品有较强的绿光发射积分强度以及较弱的红光发射相对强度。这种差异可以通过薄膜的结晶状况和交叉弛豫机制来进行解释。     

Mn掺杂对0.7BiFeO3-0.3PbTiO3薄膜铁电性能的影响

利用溶胶-凝胶法在La Ni O3/Si O2/Si衬底上制备了掺Mn量为0%、1%、5%、10%(质量分数)的0.7Bi Fe O3-0.3Pb Ti O3(BFMPT7030/x,x=0,0.01,0.05,0.1)薄膜。XRD测试表明,薄膜均完全结晶,呈现高度(100)择优取向。通过对薄膜晶体结构分析,发现BFMPT7030/0.05薄膜具有最小的晶粒尺寸(258 nm)及最小的晶胞体积(61.25×10-3 nm3)。SEM测试结果显示样品晶粒生长充分,晶粒尺寸在150~300 nm之间。铁电性能测试结果表明,当Mn含量为5%时,铁电性能较好,电滞回线形状最好,最为饱和。漏电流测试结果表明随着掺Mn量增加,BFMPT7030薄膜的漏电流随电场增大而增加的趋势减弱。     

一种氮、铋共掺杂二氧化钛薄膜的制备方法

一种制备氮、铋共掺杂TiO2薄膜的方法。本发明利用溶胶-凝胶法制备氮、铋共掺杂TiO2溶胶,再采用浸渍提拉法在基片上制得一定厚度的预制膜,预制膜在一定温度焙烧后得到氮、铋共掺杂TiO2薄膜。本发明具有工艺独特、操作方便,掺杂元素易控制,性能可调控的特点,通过掺杂金属三价离子铋和非金属负三价元素氮,掺杂组分氮、铋之间的协同作用,有望得到具有可见光响应的高活性TiO2基功能材料,可进一步拓宽TiO2纳米材料的应用领域。本发明的制备方法也为其他的金属离子或非金掺杂TiO2的开发和大规模应用提供了新思路。     

Er3+掺杂位置对Er3+:BaTiO3薄膜上转换发光的影响

采用溶胶-凝胶法在LaNiO3/Si衬底上制备Er3+掺杂BaTiO3薄膜.通过XRD、AFM和PL图谱分别研究薄膜的晶体结构、形貌以及上转换发光性能.结果表明,薄膜的微观结构和发光性能与Er3+掺杂晶格的位置有关.A位掺杂薄膜较B位掺杂薄膜具有较小的晶格常数和较好的结晶.PL光谱表明:A位掺杂的薄膜和B位掺杂的薄膜都于528 nm和548nm处获得较强的绿色上转换发光以及在673 nm处获得较弱的红光,分别对应Er3+离子的2H11/2→4I15/2,4S3/2→4I15/2和4F9/2→4I15/2能级跃迁.相对于B位掺杂的薄膜,A位掺杂样品有较强的绿光发射积分强度以及较弱的红光发射相对强度.这种差异可以通过薄膜的结晶状况和交叉弛豫机制来进行解释.     

High tunability of pulsed laser deposited Ba0.7Sr0.3TiO3 thin films on perovskite oxide electrode

Ferroelectric thin films such as BST, PZT and PLZT are extensively being studied for the fabrication of DRAMS since they have high dielectric constant. The large and reversible remnant polarization of these materials makes it attractive for nonvolatile ferroelectric RAM application. In this paper we report the characterization of Ba_0.7Sr_0.3TiO₃ (BST) thin films grown by pulsed laser ablation on oxide electrodes. The structural and electrical properties of the fabricated devices were studied. Growth of crystalline BST films was observed on La_0.5Sr_0.5CoO₃ (LSCO) thin film electrodes at relatively low substrate temperature compared to BST grown on PtSi substrates. Electrical characterization was carried out by fabricating PtSi/LSCO/BST/LSCO heterostructures. The leakage current of the heterostructure is studied and a band structure is modeled based on the transport properties of the heterostructure. The dielectric constant of the BST film is found to be 630 at 100 kHz with a loss tangent of 0.04. The capacitance voltage characteristics show high tunability for BST thin films.     

Room temperature ferroelectric property of BiMnO<Subscript>3</Subscript> thin film with double SrTiO<Subscript>3</Subscript> buffer layers on Pt/Ti/SiO<Subscript>2</Subscript>/Si substrate

We fabricated high quality BiMnO₃ thin films with double SrTiO₃ buffer layers on Pt/Ti/SiO₂/Si substrates, in which the SrTiO₃ buffer layers were used for the reduction of leakage current in BiMnO₃ thin films. We chose an SrTiO₃ thickness of about 5 nm, which was obtained by the fitting of ellipsometer data. We confirmed a remarkable enhancement in leakage current. BiMnO₃ thin films exhibited a ferromagnetic transition with Curie temperature of about 105 K. The BiMnO₃ thin film also showed a good ferroelectric property with a remnant polarization of about 9 μC/cm².     

Electrical characteristics and microstructures of Pr6O11-doped Bi4Ti3O12 thin films

Pr6O11-doped bismuth titanate (BixPryTi3O12, BPT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicate that all of BPT films consist of single phase of a bismuth-layered structure with well-developed rod-like grains. For samples with y=0.06 , 0.3, 1.2 and 1.5, I-E characteristics exhibit negative differential resistance behaviors and their ferroelectric hysteresis loops are characterized by large leakage current. Whereas for samples with y=0.6 and 0.9, I-E characteristics are of simple ohmic behaviors and their ferroelectric hysteresis loops are saturated and undistorted. The remanent polarization (Pr) and coercive field (Ec) of the BPT Film with y=0.9 are above 35 μC/cm2 and 80 kV/cm, respectively.     

Self-limited grain growth,dielectric, leakage and ferroelectric properties of nanocrystalline BiFeO3 thin films by chemical solution deposition

In this study, the growth mechanism of nanocrystalline BiFeO₃/Pt/Ti/SiO₂/Si thin films by chemical solution deposition has been investigated through isothermal annealing, and the dielectric, leakage and ferroelectric properties have also been studied in detail. The derived thin films show self-limited grain growth, which can be described well by a relaxation model, and the microstrain evolution follows exponential decay behavior. The dielectric constant and the loss behaviors have been investigated, and different contributions are expected for different thin films. The leakage current density behavior shows that conduction mechanisms are dominant, with the ohmic mechanism, the space-charge-limited current mechanism and the Fowler–Nordheim tunneling mechanism in low, middle and high electric fields, respectively. The behaviors of the ferroelectric coercive field and the polarization have also been investigated and found to be dominated by different factors for different samples. The results will provide an instructive route to optimize BiFeO₃-based thin films grown using the chemical solution deposition method.