凝固超声处理对Al/Zn-3Al/Cu钎焊接头显微形貌及性能的影响

主要研究了Al/Zn-3Al/Cu钎焊接头在凝固过程中实施超声处理时其钎缝层显微结构和性能的演变。研究结果表明,在未经凝固超声处理的钎焊接头中,钎缝层呈现出一种各向异性的显微结构;然而,在经过凝固超声处理的钎焊接头中,钎缝层有着均匀的显微结构,其由一种等轴的花瓣状Cu Zn5/Al复合物以及弥散其间的细小α-Al晶粒和Zn-Al共晶组织组成。性能测试结果表明,与未经凝固超声处理的钎焊接头相比,经过凝固超声处理的接头钎缝层的硬度增加了26.2%,热膨胀系数降低了38%。     

铝/钢异种金属无钎剂激光填粉熔钎焊接

采用宽带激光光斑和填粉焊接技术,在不使用钎剂的情况下进行6061铝合金/镀锌钢板的熔钎焊接实验。分析测试了接头成形、焊缝组织和接头强度,并探讨了影响接头强度的因素。结果表明,采用此方法可实现6061铝合金/镀锌钢板的熔钎焊连接。选用优化的焊接工艺参数获得了成形饱满,无裂纹、气孔等缺陷的焊缝。焊缝熔宽和金属间化合物层厚度随焊接热输入量的增加而增大。熔钎焊缝中金属间化合物由Al-Fe和Al-Fe-Si系统化合物组成。拉伸试样均断裂在钎料/镀锌钢界面,接头最大机械抗力为152.5 N/mm,断口呈脆性断裂特征,钎料/镀锌钢界面为接头的薄弱环节。拉伸试样铝一侧断裂面由Al5Fe2Zn0.4和α-Al组成。焊缝熔宽、金属间化合物层厚度共同决定了接头的机械抗力水平。     

Sn0.7Cu-xEr/Cu焊点界面反应及其化合物层生长行为研究

通过回流焊工艺制备了Sn0.7Cu-x Er/Cu(x=0,0.1,0.5)钎焊接头,研究钎焊温度及等温时效时间对接头的界面金属间化合物(IMC)的形成与生长行为的影响。结果表明:Sn0.7Cu钎料中微量稀土Er元素的添加,能有效抑制钎焊及时效过程中界面IMC的形成与生长。在等温时效处理过程中,随着时效时间的延长,界面反应IMC层不断增厚,在相同时效处理条件下,Sn0.7Cu0.5Er/Cu焊点界面IMC层的厚度略小于Sn0.7Cu0.1Er/Cu焊点界面的厚度。通过线性拟合方法,得到Sn0.7Cu0.1Er/Cu和Sn0.7Cu0.5Er/Cu焊点界面IMC层的生长速率常数分别为3.03×10–17 m2/s和2.67×10–17 m2/s。     

Ti对Sn0.7Cu无铅钎料润湿性和界面的影响

研究了Ti的加入对Sn0.7Cu无铅钎料润湿性能以及钎料/Cu界面微观组织的影响.结果表明:在Sn0.7Cu中添加微量Ti,提高了钎料的润湿性能,可使铺展面积提高5％左右,当钎焊时间为3s时,界面金属间化合物(IMC)形貌由原来的扇贝状变为锯齿状;随着钎焊时间延长,Sn0.7Cu/Cu和Sn0.7Cu0.008Ti/C...     

Sn基钎料与Cu和Al基板的润湿性比较研究

采用润湿平衡法测量了四种Sn基钎料(Sn-37Pb、Sn-3.OAg-0.5Cu、Sn-0.7Cu与Sn-9Zn)分别在250,260和270℃与Cu、Al两种基板的润湿性能.结果表明:钎料与Al基板的润湿时间均比Cu基板长,除Sn-9Zn外,其他三种钎料与Cu基板的润湿力比Al基板大,并且随着温度升高,润湿性能提高,...     

Sn-3.0Ag-0.5Cu/Cu焊点可靠性研究

采用铺展面积法研究了Sn-3.0Ag-0.5Cu无铅钎料在不同温度下的润湿性能,同时探讨了150℃等温时效对Sn-3.0Ag-0.5Cu/Cu焊点界面组织及力学性能的影响。结果表明,随着钎焊温度的升高,Sn-3.0Ag-0.5Cu钎料的润湿性能明显增加。焊后钎料/Cu界面处对应的金属间化合物为Cu6Sn5相,经150℃时效,界面层的形貌由原来的齿状逐渐转化为层状,且厚度随着时效时间的增加而增加。发现界面层金属间化合物厚度与时效时间的二次方根成线性关系。对焊点在时效过程中的力学性能进行分析,发现Sn3.0Ag0.5Cu/Cu焊点的力学性能随着时效时间的增加逐渐降低,时效初期,焊点的力学性能下降较快,后期趋于平缓。     

Sn-Cu、Sn-Ag-Cu系无铅钎料的钎焊特性研究

制备了Sn-0.7Cu、Sn-3.5Ag-0.6Cu钎料,用润湿平衡法测量了钎料对铜的润湿曲线,研究了温度、钎剂活性、钎焊时间对润湿行为的影响,并与Sn-37Pb钎料进行了比较。结果表明:升高温度能显著改善无铅钎料对铜的钎焊性。当温度<270℃时,Sn-0.7Cu的钎焊性明显低于Sn-3.5Ag-0.6Cu钎料;而当温度≥270℃时,两种钎料对铜都会显示较好的润湿性,而Sn-0.7Cu略优于Sn-3.5Ag-0.6Cu钎料。提高钎剂活性能显著增强钎料对铜的润湿性,其卤素离子的最佳质量分数均为0.4%左右。随着浸渍时间的延长,熔融钎料与铜的界面间产生失润现象。无铅钎料的熔点和表面张力较高,是钎焊性较差的根本原因。     

镀锌板激光钎焊钎缝成形和接头质量研究

本文以CuSi3为钎料,电镀锌钢板为母材,CO2激光为热源,对卷对接接头进行了激光填丝钎焊研究。试验过程中,通过改变钎焊工艺参数及激光入射方式,研究了镀锌钢板激光填丝钎焊在不同热输入下的钎缝外观成形规律。结果表明,激光功率和光斑直径是影响钎缝成形最重要的因素;倾斜入射激光可以改善钎缝成形质量。此外,对不同热输入和同一接头不同部位的界面结合情况和界面元素的分布进行了SEM观察和电子探针分析。结果表明,随着钎焊线能量的增加,Si、Mn元素容易在界面处出现偏聚;相对于接头上部,接头下部钎料与母材结合微弱,界面更容易出现Si、Mn、Zn元素的富集。     

激光深熔钎焊车用铝/钢异种金属试验研究

为了实现车用铝/钢异种金属良好连接,采用光纤激光对车用铝合金与镀锌钢对接接头进行了激光深熔填丝钎焊工艺试验,并对焊缝接头的成形、界面金属间化合物层,以及力学性能进行了分析。结果表明,铝合金一侧是激光深熔焊接接头,而镀锌钢一侧是钎焊接头;在镀锌钢与钎焊缝中间界面存在金属间化合物层,厚度小于10μm;金属间化合物主要为Al7.2Fe2Si和（Al,Si）13Fe4;拉伸试样主要断裂于铝合金热影响区处,平均抗拉强度为145MPa;接头的断裂方式主要是韧窝断裂。     

超声楔键合Au/Al和Al/Au界面IMC演化

基于固体相变理论,研究Au丝、Al丝超声楔-楔键合接头的温度长期可靠性.200℃下,存储时间＜48 h时,Au/Al接头界面并未发生明显变化;随着接头存储时间增加,界面金属间化合物(IMC)开始由焊盘向引线方向生长(垂直生长);240 h时,Al焊盘完全被消耗,接头连接界面部位生成Au5Al2,周边为Au2Al;继续增加存储时间,IMC向接头水平方向生长(水平生长),Au5Al2向更稳定的Au2Al转变,IMC与引线之间形成严重的Kirkendall孔洞.Al/Au系统相对稳定得多,界面IMC生长缓慢,然而,界面化合物AuAl2导致接头裂纹,而引线内部出现严重的空洞.对比并分析了两种楔焊系统界面演变特点和产生机制.     

Al,Al/C and Al/Si implantations in 6H-SiC

Multiple-energy Al implantations were performed with and without C or Si coimplantations into 6H-SiC epitaxial layers and bulk substrates at 850°C. The C and Si co-implantations were used as an attempt to improve Al acceptor activation in SiC. The implanted material was annealed at 1500, 1600, and 1650°C for 45 min. The Al implants are thermally stable at all annealing temperatures and Rutherford backscattering via channeling spectra indicated good lattice quality in the annealed Al-implanted material. A net hole concentration of 8 × 10¹⁸ cm⁻³ was measured at room temperature in the layers implanted with Al and annealed at 1600°C. The C or Si co-implantations did not yield improvement in Al acceptor activation. The co-implants resulted in a relatively poor crystal quality due to more lattice damage compared to Al implantation alone. The out-diffusion of Al at the surface is more for 5Si co-implantation compared to Al implant alone, where 5Si means a Si/Al dose ratio of 5.     

Electrical analysis of Al/ZnO/p-Si,Al/PMMA/p-Si and Al/PMMA/ZnO/p-Si structures: Comparison study

Al/ZnO/p-Si, Al/PMMA/p-Si and Al/PMMA/ZnO/p-Si structures were fabricated. Based on the measured current–voltage (C–V) and capacitance–voltage curves, the electrical characteristics of these heterostructures such as ideality factor, barrier height and series resistance of each structure were analyzed and then compared with those of Al/PMMA/ZnO/p-Si. According to C–V measurement, it was found that the Al/PMMA/ZnO/p-Si structure indicates the better electronic performance rather than other structures. The obtained results represent low series resistance (19.3 Ω) after coating with polymethyl methacrylate (PMMA) over ZnO/p-Si heterojunction structure for Al/PMMA/ZnO/p-Si heterostructure.     

Contact resistance of LPCVD W/Al and PtSi/W/Al metallization

The sensitivity of measured specific contact resistivity to surface doping concentration has been investigated for selectively deposited LPCVD W contacts to n+ and p +Si with surface concentrations from 10¹⁸to 10²⁰cm^-3. W contact resistance to n+ Si is about a factor of 20 lower than that of Al; W contact resistance to p +Si is comparable to that of Al. Ultralow resistance, stable contacts with self-aligned PtSi, and W to p +Si are demonstrated.     

Reliability Studies on the 2-Level Al/SiO2/Al System

The reliability of the 2-level aluminum/silicon dioxide/aluminum system has been investigated. Test structures were fabricated using two types of aluminum films, deposited on unheated substrates (Al-I) and on 200°C substrates (Al-II). Two types of insulation layers were used: SiO2 from oxidation of silane, and rf sputtered SiO2 with an overlay of silane SiO2. Scanning electron microscopy was used to examine the topography of the crossovers and via-holes. More hillocks were seen with Al-I films than with Al-II films. Via-hole resistance and the incidence of intralevel opens and interlevel shorts were determined. A comparative evaluation of the four structures indicated that Al-II films are more desirable for first-level metallization. The test structures with Al-II films, subjected to 150°C storage for 1000 hours, exhibited no increase in the interlevel resistance and a failure rate of one interlevel short per 12000 crossovers, each 0.5 mil (13 ?m) square. Temperature cycling of these structures from -65°C to 150°C for 500 cycles developed no interlevel shorts and resulted in a decrease of the interlevel resistance. These observations show a failure rate of less than one interlevel short per 13200 crossovers in 500 cycles. Process problems related to the reliability of 2-level structures are discussed.     

The incubation time for hole formation due to electromigration in Al and Al/Cu/Al thin films

Transmission electron microscope observations of hole formation in Al and Al/Cu/Al thin film conductors carrying high current densities have revealed the presence of an incubation period for hole growth. The temperature dependence of this incubation period for pure aluminum conductors has been determined and found to follow an Arrhenius relationship with an activation energy of 0.55 ev ± 0.1 ev.     

High-barrier Pt/Al/n-InP diode

A new Pt/Al/n-InP contact diode which has a good l-V characteristic is studied. It has a barrier height of 0.74 eV which increases to 0.99 eV when it is treated with HF, an ideality factor of 1.18, and a reverse leakage current of 5.5×10⁸ A/cm² at -3 V. This good performance is believed to be due to the combined effects of the formation of an interfacial oxide layer and fluorine passivation on the surface     

Thermal stability of Al/AlGaAs and Al/GaAs/AlGaAs (MBE) Schottky barriers

Outstanding stability has been observed in Al/Al/sub x/Ga/sub 1-x/As and Al/GaAs/Al/sub x/Ga/sub 1-x/As (x=0.25) Schottky barriers prepared by depositing Al in situ by MBE on annealing up to 400 degrees C. Conventionally evaporated barriers have been fabricated and compared with epitaxial ones. The changes in barrier height and ideality factor induced by annealing are reported.<>     

用Al或Mo/Al/Mo低阻材料改善4-Mask工艺中Al腐蚀的方法

为了减少制造工艺的过程,改进的4-Mask工艺中采用Al基的数据线已得到进一步的完善。但这个工艺仍存在很多问题,主要是为减少工艺过程,而引入干法刻蚀对Al有腐蚀作用。本文应用CF4/O2等离子体处理,很好地阻止了对Al的腐蚀,得到很好的效果,对改进后4-Mask工艺的进一步应用具有非常重要的意义。     

原位TiC-AlN/Al复合材料中AlN/Al界面的微结构的研究

本文用透射电镜（ＴＥＭ）的衍技术和高分辨电镜（ＨＲＴＥＭ）研究了用原位固－气－液三态反应法制备的原位ＴｉＣ－ＡｌＮ／Ａｌ复合材料中ＡｌＮ颗粒与Ａｌ界面的微现组织结构，发现ＡｌＮ／Ａｌ界面两侧晶休的两个晶面存在平行关系；（１０１）ＡｌＮ／（１１１）Ａｌ。作者从金属固溶和金属结晶理论出发，分析了ＡｌＮ／Ａｌ界面微结构的形成机制，较好地解决了原位了ＴｉＣ－ＡｌＮ／Ａｌ昨合材料中界面结合较好的原因。