X射线管结构与焦斑关系研究

X射线管是X射线机的心脏,是产生X射线的源泉<参考文献原文>。其焦斑大小及分布对整机图像清晰度起着决定性的作用。通过对X射线管结构特点、焦斑产生机理、电极结构与焦斑相关性实验的测试数据及理论分析等多方面的论述,探讨了X射线管结构尺寸对焦斑的影响。通过系列实验及理论分析表明:X射线管阴极结构对焦斑有巨大的影响。借助计算机模拟仿真计算,合理设计阴极结构,能够获取大小适中、分布均匀的焦斑,从而达到改善X射线机图像清晰度的目的。     

碳纳米管冷阴极X射线管研究述评

碳纳米管(CNTs)优异的场致电子发射性能在开发冷阴极X射线管方面展现出显著优势.研究表明,通过控制电子发射方式和提高CNTs阴极发射电流的密度和稳定性可显著提升X射线源的时空分辨能力,且能大幅降低射线管的尺寸和功耗,在高端生物医疗、无损检测和科学研究等领域具有巨大潜在应用价值;但技术实现上仍存在CNTs阴极的可靠性、...     

反射式X射线管阳极钨靶的模拟优化设计

反射式X射线管已广泛应用于放射诊疗、工业探伤、安全检查等领域。阳极靶作为X射线管的关键部件，对X射线管的性能有着决定性的作用。本文采用基于蒙特卡罗方法的MCNP软件对能量为160 keV电子束在反射式X射线管钨靶上的轫致辐射规律进行了模拟研究，研究了出束方向的光强随阳极靶厚和靶角的变化规律，比较了焦点长度方向和宽度方向一定锥角范围内X射线出射谱的特点，最终给出了X射线管靶厚和靶角设计的优化方案，对于提高X射线管亮度和能谱一致性具有一定的理论指导意义。     

碳纳米管场发射微焦点高速X射线管

具有快速启动和高速拍照特性的微焦点X射线管具有广泛的应用需求。一种基于碳纳米管场致发射阴极阵列的微焦点X射线管研制成功。采用由微波等离子体化学气相沉积方法制备出的高度定向的、具有优异场致发射性能的碳纳米管微束阵列作为X射线管的冷阴极,以此设计出由六边型铜网为栅极的多级式高分辨率电子光学系统,使该X射线管可以实现高速脉冲拍照特性。当栅极电压为2.7kV时,总发射电流达到2mA,碳纳米管相应的发射电流密度达到2.5A/cm2,此时X射线的焦斑尺寸为39μm,从而可以实现高分辨率X射线成像。     

冷阴极X射线管关键部件的设计与仿真

利用CST粒子工作室软件设计仿真了一种高电子通过率冷阴极微焦点X射线管。重点分析X射线管阴极结构、栅网和聚焦极的结构与电压、阳极电压等关键因素对电子束聚焦束斑的影响,特别是设计了一种独特的阴极凹槽结构,使阴极电子束发射的散角减小了21.84°,并使电子枪通过率从54.3%增加至74.59%。在此基础上设计的碳纳米管X射线管在阳极电压为70 kV时,电子通过率可达到75%,电子束焦点约为56 μm,聚束比为5∶1,可为冷阴极微焦点X射线管的设计和加工提供参考。     

X射线管mA下跌的成因分析和解决方法

对X射线管在高频恒压条件下工作时出现的mA下跌现象,进行了多方面的分析,深入浅出地解释了X射线管阳极电流不稳定的成因,mA下跌主要是由散射电子堆积在玻壳上形成静电荷,抑止了阴极的发射,静电荷的形成过程正是mA下跌的过程,并提出了克服mA下跌的方法,经生产实践中使用效果良好.     

用电子光学的方法模拟电子束聚焦

SIMION8.0软件可以模拟空间中的电场分布,便于研究X射线管中电子的聚焦过程。本实验通过通过定性半定量的分析方法,得到提高该X光系统电子聚焦效果的方式是降低电子能量,增大阴极电压和减小阴阳极间距。     

平滑型耐高温碳场发射体SCFE在真空X射线管内的试用

为改进便携式RTx-150Ⅱ型X射线机内真空园锥靶脉冲X射线管的性能,研制成功了一种平滑型耐高温碳场电子发射体SCFE,该SCFE阴极首次装入X射线管即表现出了良好的性能,目前装入整机已1年多,尚未见有发射性能衰变,与该管以前采用的耐高温碳场电子发射体CFE比较,除阴极表面光洁度、体积密实度大大提高,管内零件安装更精密,与管内其他电极的接触更完善等较明显的改善外,阴极总厚度降低至1 mm,特别是发射尖端处的厚度减小到了微米量级,电子发射的区域更加集中,初步试用的结果显示,电子发射性能、整管的工作稳定度都确有提高.     

XC5—0.3／75软X射线管的结构和工艺

在X射线管的阴极和阳极之间加一高电压(kV),则阴极的电子高速碰撞阳极的靶面而失去本身的功能,产生另一种形式的能量,仅有其中的百分之一左右的能量转换成X射线能量,而绝大部份转换成热能。 X射线在科研和生产方面主要用于X射线透视、X射线衍射和X射线光谱学等三方面。而最广泛的应用是X射线透视,如医用     

X射线辐照下材料电子发射特性的模拟

稳态 X 射线管是一种重要的 X 射线辐照模拟装置,在辐照效应等研究领域有重要应用。采用蒙特卡罗模拟方法计算了 50 kV,150 kV 和 225 kV 管电压下的 X 射线能谱,并对 X 射线辐照下电子发射进行了模拟;研究了准直孔直径分别为 2 mm,4 mm 和 6 mm 条件下 X 射线的焦斑分布和电子发射弥散情况,以及不同能谱的 X 射线轰击到聚乙烯、聚酰亚胺、Si、SiO₂、Cu、Ta 和 W等样品上产生的电子发射能谱和电流强度等特性,为 X 射线辐照下材料电子发射特性的实验研究和设计提供一定的理论基础和指导。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks