A design method of multidimensional linear-phase paraunitary filterbanks with a lattice structure

A lattice structure of multidimensional (MD) linear-phase paraunitary filter banks (LPPUFBs) is proposed, which makes it possible to design such systems in a systematic manner. Our proposed structure can produce MD-LPPUFBs whose filters all have the region of support 𝒩(MΞ), where M and Ξ are the decimation and positive integer diagonal matrices, respectively, and 𝒩(N) denotes the set of integer vectors in the fundamental parallelepiped of a matrix N. It is shown that if 𝒩(M) is reflection invariant with respect to some center, then the reflection invariance of 𝒩(MΞ) is guaranteed. This fact is important in constructing MD linear-phase filter banks because the reflection invariance is necessary for any linear-phase filter. Since our proposed system structurally restricts both the paraunitary and linear-phase properties, an unconstrained optimization process can be used to design MD-LPPUFBs. Our proposed structure is developed for both an even and an odd number of channels and includes the conventional 1-D system as a special case. It is also shown to be minimal, and the no-DC-leakage condition is presented. Some design examples show the significance of our proposed structure for both the rectangular and nonrectangular decimation cases     

Approximation of complex IIR bandpass filters without arithmetic symmetry

Complex transfer functions are not restricted to having complex-conjugate symmetry in the frequency-domain, as is the case for real filters. This gives them more flexibility when they are used in communication systems with complex signals, such as intermediate frequency signals of wireless communication systems. This paper describes a set of algorithms and procedures that can be used in solving the approximation problem involved in deriving complex infinite-impulse-response bandpass transfer functions directly, without the requirement of first designing a real-transfer-function prototype filter, which is then frequency translated. Because the requirement for a real prototype filter is eliminated, the filters need not have arithmetic symmetry; this results in superior stopbands with smaller filter orders. The procedures can be used for both continuous and discrete-time filters, can allow for arbitrary stopband specifications, and can be used for either equi-ripple or monotonic passbands.     

Lattice structure for arbitrary-length oversampled linear phase paraunitary filter bank with unequal numbers of symmetric and antisymmetric filters

Oversampled linear phase paraunitary filter bank (OLPPUFB) can be efficiently designed via lattice structure. Xu et al. have studied the lattice structure for arbitrary-length OLPPUFB (ALOLPPUFB), i.e. OLPPUFB with filter length KM + β, where M is the integer decimation factor, K is an integer, and β is an integer between 0 and M. Such work was restricted to be used for the case with equal numbers of symmetric and antisymmetric filters, and cannot be easily generalized for other possible cases. To address this issue, we develop in this letter the lattice structure for ALOLPPUFB with unequal numbers of symmetric and antisymmetric filters. The proposed method is carried out by combining the polyphase matrices of OLPPUFB with filter length KN, where N is the integer decimation factor, K is an integer. The efficiency of the method is shown by design examples.     

Theory and design of signal-adapted FIR paraunitary filter banks

We study the design of signal-adapted FIR paraunitary filter banks, using energy compaction as the adaptation criterion. We present some important properties that globally optimal solutions to this optimization problem satisfy. In particular, we show that the optimal filters in the first channel of the filter bank are spectral factors of the solution to a linear semi-infinite programming (SIP) problem. The remaining filters are related to the first through a matrix eigenvector decomposition. We discuss uniqueness and sensitivity issues. The SIP problem is solved using a discretization method and a standard simplex algorithm. We also show how regularity constraints may be incorporated into the design problem to obtain globally optimal (in the energy compaction sense) filter banks with specified regularity. We also consider a problem in which the polyphase matrix implementation of the filter bank is constrained to be DCT based. Such constraints may also be incorporated into our optimization algorithm; therefore, we are able to obtain globally optimal filter banks subject to regularity and/or computational complexity constraints. Numerous experiments are presented to illustrate the main features that distinguish adapted and nonadapted filters, as well as the effects of the various constraints. The conjecture that energy compaction and coding gain optimization are equivalent design criteria is shown not to hold for FIR filter banks     

Linear phase paraunitary filter bank with filters of differentlengths and its application in image compression

In this paper, the theory, structure, design, and implementation of a new class of linear-phase paraunitary filter banks (LPPUFBs) are investigated. The novel filter banks with filters of different lengths can be viewed as the generalized lapped orthogonal transforms (GenLOTs) with variable-length basis functions. Our main motivation is the application in block-transform-based image coding. Besides having all of the attractive properties of other lapped orthogonal transforms, the new transform takes advantage of its long, overlapping basis functions to represent smooth signals in order to reduce blocking artifacts, whereas it reserves short basis functions for high-frequency signal components like edges and texture, thereby limiting ringing artifacts. Two design methods are presented, each with its own set of advantages: the first is based on a direct lattice factorization, and the second enforces certain relationships between the lattice coefficients to obtain variable length filters. Various necessary conditions for the existence of meaningful solutions are derived and discussed in both cases. Finally, several design and image coding examples are presented to confirm the validity of the theory     

Implementation of 2-D pseudo-rotated digital filters using a forward lattice structure

The 1-D FDLS shows the localized feedback property and is suitable for modular and concurrent implementation. It is known that the 1-D FDLS shows interesting properties with respect to finite word-length effects. In this paper, a new result is given for the estimation of the lower and upper bound of the variance of the roundoff noise. It is presented how the FDLS can be incorporated to implement 2-D pseudo-rotated digital filters. The 1-D roundoff noise analysis is extended to the 2-D case. It is indicated how 2-D filter banks can be derived from the FDLS.     

Bl-AlN/TiN(001)界面结构与电子特性

立方结构AlN（Bl-AlN）具有热稳定性好和硬度高等独特的物理特性。近年来，在实验中已成功地将Bl-AlN外延生长在TiN基体上。界面特性在超晶格中的作用是非常重要的：然而，对界面材料的研究不仅要注重其显微结构和界面原子像，而且要关注其界面的电子结构和性质。     

Metal/semiconductor contact properties of Al/Co(II)complex compounds

A ligand(N-APTH) and Co(II)complex compound of bidentate ligand which contains a ring of the pyrimidine have been produced. For the optical transmission measurements of the Co(II)complex compound thin films, a UV-Visible (UV-Vis) spectrophotometer was employed. As a result of optical measurements, it was revealed that Co(II)complex compound tends to show a semiconductor characteristic with the bandgap value of 3.46 eV. An attempt has been made to explore the rectifying and ohmic properties of Al/Co(II)complex compound/Cu structures assuming that Co(II)complex compound may exhibit a rectifier or ohmic behavior, depending on the fabrication process, when brought into an appropriate contact with a metal. From current-voltage (I-V) measurements, it was found that the device could show good ohmic and rectifying properties intentionally depending on the experimental process followed during fabrication.     

Performance of adaptive filters using combined lattice and transform techniques

A composite scheme combining lattice and transform techniques for implementation of adaptive filters is discussed. Results of the eigenvalue spreads and convergence time for simple correlation cancelers in combination with Walsh-Hadamard Transform (WHT) are reported.     

复合钙钛矿介质陶瓷结构对称性的旋进电子衍射研究

采用最新的旋进电子衍射技术研究了Ca(Mg1/3Ta2/3)O3复合钙钛矿陶瓷的晶体结构.在一定的旋进角下,旋进电子衍射可以很好地消除传统电子衍射中的动力学效应,揭示了Ca(Mg1/3Ta2/3)O3结构中B位离子有序是决定其晶体结构的关键因素,而通过旋进电子衍射花样中对称元素的直观确认,并结合会聚束晶体点群确认方法,证实了Ca(Mg1/3Ta2/3)O3陶瓷属于单斜2/m点群.     

Constitutive tensors and general properties of complex andbianisotropic media described by continuous groups of symmetry

The constitutive tensors of complex and bianisotropic media described by continuous magnetic groups of symmetry are derived and some general properties of the corresponding media are discussed     

镜像对称结构一维光量子阱的光传输特性

用传输矩阵法研究对称结构一维光量子阱 （AB）m（ABCBA）n（BA）m的光传输特性,结果发现：随n的增加,光量子阱（AB）5（ABCBA）n（BA）5的透射谱出现（2n-1）条共振透射峰,量子化效应明显;量子阱内部出现很强的局域电场：当n=1时,光量子阱（AB）m（ABCBA）1（BA）m内部局域电场强度随着m增加而增强,而当m=5时,光量子阱（AB）5（ABCBA）n（BA）5内部局域电场强度不随n的变化而改变,但局域范围扩大。这些光学传输特性,为光子晶体设计新型光学器件提供指导。     

Some extremal properties of Daubechies filters and other orthonormal filters

New extremal properties of Daubechies 4-tap orthonormal filters are given: they maximize a certain functional, have the largest gain in (0,π/2), and allow maximum energy compaction in [0,π/2]. These properties do not carry over to Daubechies filters of arbitrary length. They complement what is known about Daubechies filters and highlight the specific role of the 4-tap filter. Moreover, we demonstrate that these properties cannot be fulfilled by any other orthonormal lowpass filter, regardless of its length.     

Temperature and frequency dependent electrical and dielectric properties of Al/SiO2/p-Si (MOS) structure

The electrical and dielectric properties of Al/SiO₂/p-Si (MOS) structures were studied in the frequency range 10 kHz-10 MHz and in the temperature range 295-400 K. The interfacial oxide layer thickness of 320 Å between metal and semiconductor was calculated from the measurement of the oxide capacitance in the strong accumulation region. The frequency and temperature dependence of dielectric constant (ε′), dielectric loss (ε″), dielectric loss tangent (tan δ) and the ac electrical conductivity (σ_ac) are studied for Al/SiO₂/p-Si (MOS) structure. The electrical and dielectric properties of MOS structure were calculated from C-V and G-V measurements. Experimental results show that the ε′ and ε″ are found to decrease with increasing frequency while σ_ac is increased, and ε′, ε″, tan δ and σ_ac increase with increasing temperature. The values of ε′, ε″ and tan δ at 100 kHz were found to be 2.76, 0.17 and 0.06, respectively. The interfacial polarization can be more easily occurred at low frequencies, and the number of interface state density between Si/SiO₂ interface, consequently, contributes to the improvement of dielectric properties of Al/SiO₂/p-Si (MOS) structure. Also, the effects of interface state density (N_ss) and series resistance (R_s) of the sample on C-V characteristics are investigated. It was found that both capacitance C and conductance G were quite sensitive to temperature and frequency at relatively high temperatures and low frequencies, and the N_ss and R_s decreased with increasing temperature. This is behavior attributed to the thermal restructuring and reordering of the interface. The C-V and G/ω-V characteristics confirmed that the N_ss, R_s and thickness of insulator layer (δ) are important parameters that strongly influence both the electrical and dielectric parameters and conductivity in MOS structures.     

两端对称复缺陷对光子晶体透射特性的激活效应

为研究和设计高品质、高性能的光学滤波、光学放大、光学衰减和全反射镜等器件,通过计算模拟的方式,研究两端对称复缺陷对光子晶体C(AB)n(BAB)(BA)nC光传输特性的激活效应,研究表明:在对称结构光子晶体的两端置入缺陷C,当缺陷C为实介质时,光子晶体透射谱中出现多条透射率为100％的分立透射峰.当C中掺入具有增益放大...     

(Na_(1/2)Nd_(1/2))TiO_3陶瓷的晶体结构及微波介电性能

通过固相烧结法制备了具有高介电常数的(Na1/2Nd1/2)TiO3微波介质陶瓷,研究了烧结温度对该陶瓷微观结构及微波介电性能的影响。结果表明,在烧结温度低于或等于1 350℃时,所制陶瓷样品的主晶相为立方相的(Na1/2Nd1/2)TiO3;当烧结温度高于1 350℃时,所制陶瓷样品的主晶相变为四方相的Nd0.667TiO3。陶瓷样品的相对介电常数和品质因数随着烧结温度的升高均先增大后减小,在烧结温度为1 300℃时所制陶瓷样品最为致密,并具有最佳的微波介电性能,εr=110.06,Q×f=8 147 GHz,τf=244.6×10–6/℃。     

Design of two-dimensional digital filters on the basis of quadrantal and octagonal symmetry

Two-dimensional recursive digital filters have the advantages of flexibility and accuracy, typical of digital processing systems, and the ability to perform the desired filtering with significantly fewer operations than nonrecursive filters. In this paper some useful symmetries are exploited in the design of filters with circularly symmetric magnitude responses. With the imposition of quadrantal symmetry, followed by further symmetry about the 45° line, a particular filter structure is derived using a cascade of causal second-order sections. Each section uses only four independent coefficients and possesses a separable denominator, with resulting simplification of stability testing and stabilization, which can now be done by using one-dimensional techniques. The Fletcher-Powell nonlinear optimization routine is used with a mean-squared error criterion, which enables the optimum value of the gain to be incorporated into the objective function to be minimized. Linear phase is approximated by designing all-pass equalizers which can be cascaded with the filters designed.     

Temperature dependent electrical and dielectric properties of a metal/Dy2O3/n-GaAs (MOS) structure

This paper describes the structural properties, electrical and dielectric characteristics of thin Dy₂O₃ layer deposited on the n-GaAs substrate by electron beam deposition under ultra vacuum. Structural and morphological characterizations are investigated by atomic force microscopy (AFM) and X-ray diffraction measurements (XRD). The XRD shows that the elaborated Dy₂O₃ oxide has a cubic structure. The electrical and dielectric properties of Co/Au/Dy₂O₃/n-GaAs structure were studied in the temperature range of 80–500 K. The conductance and capacitance measurements were performed as a function of bias voltage and frequency. The dielectric constant (ε′), dielectric loss (ε″) and dielectric loss tangent (tanδ) of the structure are obtained from capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements. These parameters are found to be strong functions of temperature and bias voltage. A strong negative capacitance (NC) phenomenon has been observed in C–V; hence ε′–V plots for each temperature value take negative values. The following behavior of the C and ε′ in the forward bias region has been explained with the minority-carrier injection and relaxation theory. From DC conductance study, electronic conduction is found to be dominated by thermally activated hopping at high temperature. Activation energy is deduced from the variation of conductance with temperature. The interface state density (N_ss) of the structure is of the order 1.13×10¹³ eV⁻¹ cm⁻².     

Theory and design of optimum FIR compaction filters

The problem of optimum FIR energy compaction filter design for a given number of channels M and a filter order N is considered. The special cases where N相似文献   

First-principles study on electronic properties and lattice structures of WZ-ZnO/CdS interface

We theoretically investigated the lattice structure, interface bonding energy, optical absorption properties and electronic properties of WZ-ZnO (1 1 2)/CdS (1 1 0) interface from first-principles calculations. The interface lattice mismatch is less than 4.3%. The atomic bond lengths and atomic positions change slightly on the interface after relaxation. The WZ-ZnO (1 1 2)/CdS (1 1 0) interface has bonding energy about −0.61 J/m², suggesting that this interface can exist stably. Through analysis of the density of states, no interface state is found near the Fermi level. In addition, there are orbital hybridizations between different interfacial atoms, and these orbital hybridizations effectively enhance the bonding of Zn and S atoms, Cd and O atoms on the interface. By analysis of difference density charge and Bader charge, we find that electrons on the interface are largely redistributed and charges transport near the Fermi level which strengthen the adhesion of the interface.