共查询到20条相似文献,搜索用时 15 毫秒
1.
本文就如何利用外加应力或用检测手段进行二次筛选,将早期失效的元器件从整批产品中剔除,从源头上确保电子产品的质量和寿命.以及在元器件质量和可靠性得到充分保证的前提下,如何不断提高印制板组件加工和检验水平进行了探讨.通过二次筛选以及提高印制板组件加工和检验水平,可以提升模块乃至整机的质量从而使航空电子产品的质量得到充分保证. 相似文献
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Digby J.W. McIntosh C.E. Parkhurst G.M. Towlson B.M. Hadjiloucas S. Bowen J.W. Chamberlain J.M. Pollard R.D. Miles R.E. Steenson D.P. Karatzas L.S. Cronin N.J. Davies S.R. 《Microwave Theory and Techniques》2000,48(8):1293-1302
The fabrication and characterization of micromachined reduced-height air-filled rectangular waveguide components suitable for integration is reported in this paper. The lithographic technique used permits structures with heights of up to 100 μm to be successfully constructed in a repeatable manner. Waveguide S-parameter measurements at frequencies between 75-110 GHz using a vector network analyzer demonstrate low loss propagation in the TE10 mode reaching 0.2 dB per wavelength. Scanning electron microscope photographs of conventional and micromachined waveguides show that the fabrication technique can provide a superior surface finish than possible with commercially available components. In order to circumvent problems in efficiently coupling free-space propagating beams to the reduced-height G-band waveguides, as well as to characterize them using quasi-optical techniques, a novel integrated micromachined slotted horn antenna has been designed and fabricated, E-, H-, and D-plane far-field antenna pattern measurements at different frequencies using a quasi-optical setup show that the fabricated structures are optimized for 180-GHz operation with an E-plane half-power beamwidth of 32° elevated 35° above the substrate, a symmetrical H-plane pattern with a half-power beamwidth of 23° and a maximum D-plane cross-polar level of -33 dB. Far-field pattern simulations using HFSS show good agreement with experimental results 相似文献
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This paper presents a practical realization of the system for the active control of boundary conditions during the dynamic thermal characterization of electronic components. The control of boundary conditions is exercised by the dual cold plate cooling assembly equipped with Peltier thermo-electric modules and an appropriate control circuit. Additionally, a tensometer bridge is used to assure the parallel alignment of surfaces and to adjust the contact thermal resistance between particular layers. The operation of the entire control system is illustrated based on a practical example where Peltier module currents are adjusted in real time so as to impose isothermal or constant heat flux boundary conditions on a power diode package surface during measurements performed with time varying power dissipation in the device. 相似文献
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纳米线、纳米管的制备、表征及其应用 总被引:10,自引:0,他引:10
在高度集成化浪潮的推动下,现代技术对纳米尺度功能器件的需求将越来越迫切。纳米线、纳米管等一维材料作为纳米器件中必不可少的功能组件,在纳米研究领域中的地位显得愈发重要。本文从一维纳米材料的研究范畴入手,介绍了纳米线、纳米管的制备方法,技术要点以及各种相关表征方法,并涉及了当前一维纳米材料的一些应用研究,为基于纳米线、纳米管功能器件的研制提供前期参考。 相似文献
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我一直从事中职学校电子技术的实验教学和指导电子技术装备与调试技能竞赛工作,根据自己多年来指导学生在省、市技能大赛的实验教学经验,简单分析如何指导学生参加电子装配与调试技能大赛,如何让学生从一个厌学到好学,从一个浮躁的初中生如何转变成一个勤于思考,敢于创新,善于研究的中职好学生. 相似文献
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Akshaya K. Palai Junghyun LeeSujoy Das Jihee LeeHyejin Cho Seung-Un ParkSeungmoon Pyo 《Organic Electronics》2012,13(11):2553-2560
Highly oriented 1D-microwires of a diketopyrrolopyrrole (DPP) based semiconductor i.e. DPP(CBZ)2 (Carbazole capped DPP) were synthesized, characterized and applied to the fabrication of organic optoelectronic devices. 1D-microwires of DPP(CBZ)2 were prepared by solution processing on capillary tubes serving to pin solution. A bottom-gate, top-contact field-effect transistor employing 1D-microwire and polymeric gate dielectric showed a hole mobility of 1.24 × 10−2 cm2/V s, an on-to-off drain current ratio (Ion/Ioff) of 4.7 × 103 and subthreshold slopes of 4 V/dec under ambient conditions. Under white light, a photosensitivity of 800 at VG = −40 V and photoresponsivity of 830 mW/A were achieved. This work demonstrates the potential of this new molecule and the solution method for use in various opto-electronic devices such transistors, photosensors and photovoltaics. 相似文献
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A method is described for simulating resitive networks by digital (hardware) techniques. Advantages of the method include increased accuracy of component specifications and freedom from aging effects. Other components may be simulated similarly. 相似文献
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Najafi S.I. Wang W.-J. Currie J.F. Leonelli R. Brebner J.L. 《Photonics Technology Letters, IEEE》1989,1(5):109-110
Waveguides prepared in neodymium-doped lithium-silicate glass by silver-ion exchange are discussed. Refractive index change and diffusion coefficient due to ion exchange are determined. It is observed that silver-ion exchange does not influence the emission wavelength of neodymium-doped glass 相似文献
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通过引入由分系统的可靠性参数综合评估系统可靠性参数的理论模型,对直升机机载电子设备的可靠性进行了综合评估,并通过计算举例进行验证,说明运用这种理论模型对直升机机载电子设备可靠性进行评估的可行性。 相似文献
11.
Ramadoss R. Lee S. Lee Y.C. Bright V.M. Gupta K.C. 《Advanced Packaging, IEEE Transactions on》2003,26(3):248-254
A novel approach for cost effective fabrication, assembly, and packaging of radio-frequency microelectromechanical systems (RF MEMS) capacitive switches using flexible circuit processing techniques is reported. The key feature of this approach is the use of most commonly used flexible circuit film, Kapton-E polyimide film, as the movable switch membrane. The physical dimensions of these switches are in the mesoscale range. For example, electrode area and gap height of a capacitive shunt switch on coplanar waveguide are 2 /spl times/ 1 mm/sup 2/ and 43 /spl mu/m, respectively. Pull-down voltage is in the range of 90-100 V. In the ON state (up-position), the insertion loss is less than 0.3-0.4 dB up to 30 GHz. In OFF state (down-position), the isolation value is about 15 dB at 12 GHz and increases to 36 dB at 30 GHz. These switches are uniquely suitable for batch integration with printed circuits and antennas on laminate substrates. 相似文献
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凌特公司(Linear Technology Corp.)在2001年9月发布了几款电源新器件。它们是LTC1911-1.8/1.5、LTC3405、LT1765及LT1956。本文对这些新器件做一个简介。 相似文献
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对假冒电子元器件的分类、危害和检测手段进行了阐述.电子元器件的用户可借助目视镜检、X射线、扫描超声显微镜和伏安曲线追踪仪等实验手段,对可疑电子元器件进行辨别,保证产品的质量和可靠性. 相似文献
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超材料(metamaterials)在电子元件中的应用 总被引:1,自引:0,他引:1
超材料(metamaterials)指的是一些呈现出天然材料所不具备的超常物理性质的人工复合材料。它们的超常特征来源于其中人工制备的、特殊的非均匀插入结构所导致的物理响应。介绍了近年来发展出的超材料包括左手材料、"隐身斗篷"和光子晶体等,对其在电子元件领域中的应用进行了评述和展望。 相似文献
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The author fabricated a field-emitter triode with tungsten electrodes arranged laterally on a quartz glass substrate by using the photolithography and dry etching techniques. The device consists of an array of 170 field-emitter tips with a 10-μm pitch, a columnar gate, and an anode. The emission characteristics followed the Fowler-Nordheim tunneling theory. The mutual conductance was about 0.02 μS at an anode voltage of 300 V. The authors improved the fabrication process to obtain an emitter with an operating voltage of about 100 V 相似文献
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Fabrication, characterization, and analysis of mass-transported GaInAsP/InP buried-heterostructure lasers 总被引:1,自引:0,他引:1
The mass-transported buried-heterostructure lasers have been investigated in detail. Techniques have been developed for fabrication control and wafer characterization. High yield of low-threshold lasers was obtained with the lowest threshold current being 5.5 mA. Differential quantum efficiencies as high as 28 percent per facet and smooth far-field patterns were also obtained. Deep Zn-diffusion and higher p-doping have been used to improve the linearity of the light-current characteristics. Linear light output to greater than 13 mW per facet and well-behaved threshold-temperature dependence were achieved. A conformal mapping technique has been used to calculate the voltage distribution in the laser mesa. The forward-bias voltage thus obtained for the InP pn homojunctions in the transported regions is shown to be capable of resulting in the sublinear dependence of light output on current observed in lasers with lightly p-doped cap layers. The current limit within which the laser can be operated without leakage through the homojunctions has been calculated for various device geometries and doping levels. 相似文献
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由于电子行业正在高速发展,电子产品的应用范围越来越广,其结构也趋于多样化,电子产品是由电子元器件组成的,这就使得电子元器件的数量越来越多,电子元器件是否具有高可靠性将直接影响到整机的性能.本文首先介绍了电子元器件的可靠性指标,然后分析了如何控制电子元器件可靠性的选择和应用. 相似文献