Modeling of photoinduced charge separation in germanosilicateoptical fibers during UV-excited poling

We report numerical solutions of a proposed model for charge separation and trapping during poling of germanosilicate fiber in the presence of ultraviolet (UV) light. The model was solved quantitatively in the steady state to determine the space charge field distribution after UV-excited poling of a germanosilicate optical fiber with internal electrodes. The resulting internal electric field was found to be up to an order of magnitude higher than the initial poling field, sufficient to produce an effective second-order nonlinearity consistent with experimental observations by the internal field acting on the inherent third-order nonlinearity. The effects of core-cathode spacing, nonuniform defect distributions, and photo-electron recombination rate on the induced χ_eff⁽²⁾ were also investigated. It is shown that a small core-cathode spacing is advantageous. Our UV-poled field solutions may also apply to thermal poling, provided we swap the anode and cathode designations. The results suggest that it is optimal to have the core located in the depletion region regardless of poling method     

光波导结构对其极化电光效应的影响

本文采用热极化技术在掺锗玻璃条形光波导中诱导出非线性光学效应,并通过变化光波导结构改变极化内电场的大小,研究热极化条件对诱导出的电光效应的影响。研究发现在最佳极化时间内,加入薄SiON层的光波导结构经极化后电光效应积累快,相同极化条件下诱导出的电光系数比原有的条形光波导增大约22%,同时极化光波导还存在一个较低的极化阈值电压。实验结果表明加入光波导结构中的薄SiON层可在一定程度上改变极化光波导内的电荷分布,实现强化其内部电场增大光波导内的非线性光学效应或电光效应的目的。     

Short-wavelength current tuning of InAsSb/InAsSbP heterostructure lasers caused by an injection nonuniformity

A reduction in the emission wavelength in the preferred mode of InAsSbP/InAsSb/InAsSbP heterostructure lasers by 50Å is observed when the current is raised from 1.8 to 5 times the threshold with dc and pulsed power. A comparison of the spectral and spatial distributions of the output as functions of current shows that this short-wavelength tuning is caused by a change in the distribution of the nonequilibrium charge carrier concentration over the strip width as the current is varied. This effect is modeled mathematically, taking into account the increase in the injection density and the drop in the output intensity from the middle to the sides of the waveguide. The results of the model calculation are in good agreement with experiment.     

A novel pulse-poling technique for EO polymer waveguide devicesusing device electrode poling

The authors describe a novel method for poling electrooptic polymer modulators using a pulse-poling technique. Device electrodes were used directly for poling, such that the poling field is selectively applied in a counter-aligned fashion while the single field is coaligned, thus requiring only a single-voltage source for poling and modulation. Channel waveguide losses caused by poling with the device electrodes were measured and compared to total waveguide poling. The technique was found to introduce less overall loss for devices with inactive waveguide regions of more than a few millimeters and simplifies fabrication requirements     

电光聚合物电晕极化过程中的电场和极化分析

电光聚合物材料通常采用带栅极的电晕极化技术进行处理。本文通过求解泊松方程分析电晕极化过程中聚合物内外的电场分布。将平衡状态与样品表面电位相联系,得到了平衡状态时的外部极化电流。在假定自由空间电荷的影响可以忽略的情况下,得出了外部极化电流与内部极化状态之间的简单关系。这可以在一定程度上反映极化取向的状态。     

Compound exponential distributions for undermoded reverberation chambers

Novel theoretical first-order probability density functions are derived for the energy density and magnitude of electromagnetic fields inside mode-tuned or mode-stirred reverberation chambers operated at relatively low frequencies. Deviations of physical characteristics for fields in undermoded chambers from those for ideal reverberation are quantified. These deviations are then used as parameters of the distributions. The distribution parameters can be easily and independently calculated from the measured tuner sweep data functions. The derivation is based on an eigenvalue decomposition of the 3/spl times/3 polarization matrix for the stir-averaged local field, followed by a polarization decomposition of the principal components. The theoretical distributions are compared with measured data, showing improved agreement and a significantly lower mismatch at lower frequencies compared to ideal /spl chi//sub 6//sup (2)/ distributions. The previously observed "flattening" of the cumulative distribution function is confirmed, resulting in a now calculable decrease of the mean value and an increase of the uncertainty for field statistics as frequency is lowered.     

Poling-induced waveguide polarizers in electrooptic polymers

In order to demonstrate polymeric waveguide polarizers, photobleached polymer waveguides supporting both TE and TM modes are integrated with poling induced polymer waveguides that support either TE or TM modes. Fabrication parameters like UV exposures and poling voltages are controlled to reduce excess losses due to the mode profile mismatch between the connected waveguides. A TM-pass polarizer is realized by poling the polymer in the vertical direction. For TE-pass polarizer the polymer is poled horizontally by using four poling electrodes which enhance the uniformity of the poling field direction. The measured excess loss is less than 0.5 dB, and polarization extinction ratios for TM-pass and TE-pass polarizers are 20.7 dB and 17.1 dB, respectively.     

Simulation of polarization converter formed by poling-inducedpolymer waveguides

A polarization converter using electrooptic (EO) polymer waveguides is proposed and it is simulated by a full vectorial beam propagation method (VBPM) for anisotropic medium. First, an efficient structure of poling electrodes is proposed for the fabrication of TE-mode poling-induced waveguides in EO polymer. For given electrode structures of both TE-mode and TM-mode waveguides, poling-induced dielectric tensors are calculated by the finite-element method to provide refractive index distribution, data for VBPM simulation. It is shown numerically that the poled TE and TM mode waveguides work efficiently as the corresponding polarization filters. Then, new poling electrodes are suggested to fabricate a waveguide device formed by connecting the TE and TM mode waveguides adiabatically with a slowly varying structure. This waveguide device has the optic axis slowly rotating as one moves along the propagation direction, so that it will act as polarization converter. VBPM simulation shows that the polarization of the guided mode rotates following the optic axis distribution. Polarization conversion is demonstrated successfully with high conversion efficiency and low excess loss     

Electromagnetic Potentials and Field Expansions for Plasma Radiation in Waveguides

In order to calculate the raditaion from plasmas placed in waveguides it is necessary to know the field produced by arbitrarily moving charged particles in a waveguide. In this paper modal expansions for the vector and scalar potentials due to arbitrarily moving charged particles in a waveguide are derived and provide the extension of the Lienard-Wiechert potentials to a waveguide environment. In addition, for a plasma filled waveguide, a modal expansion is given of the electric field directly in terms of mode coupling with the charge motion. Expressions for the spectral distribution of the radiation are given, both in general and for cyclotron radiation. Some specific results for the H/sub 10/ mode excited in a rectangular guide by cyclotron motion are also presented.     

Investigation of programming charge distribution in nonoverlapped implantation nMOSFETs

Novel gate-to-drain nonoverlapped-implantation (NOI) nMOSFETs have been developed as potential multibit-per-cell nonvolatile-memory (NVM) devices. The lateral charge distribution of the NOI NVM device programmed by channel hot electron injection is investigated by charge-pumping (CP) techniques with presumed interface trap distributions. For the first time, the CP results have revealed the lateral charge distribution and trapping density at the NOI's programmed state. The maximum trapping charge density locates near its drain junction. The charge distribution is estimated about 90 nm in length and spread widely over the NOI region. Two-dimensional simulators with charge bars using the same charge trapping distribution confirm the experimental results by fitting their I/sub DS/-V/sub G/ curves.     

Application of high-quality SiO/sub 2/ grown by multipolar ECR source to Si/SiGe MISFET

A 5 nm-thick SiO/sub 2/ gate was grown on an Si (p/sup +/)/Si/sub 0.8/Ge/sub 0.2/ modulation-doped heterostructure at 26 degrees C with an oxygen plasma generated by a multipolar electron cyclotron resonance source. The ultrathin oxide has breakdown field >12 MV/cm and fixed charge density approximately 3*10/sup 16/ cm/sup -2/. Leakage current as low as 1 mu A was obtained with the gate biased at 4 V. The MISFET with 0.25*25 mu m/sup 2/ gate shows maximum drain current of 41.6 mA/mm and peak transconductance of 21 mS/mm.<>     

利用半导体PN结模型分析石英玻璃的极化过程

利用半导体PN结偏置过程的理论模型,类比分析了玻璃的热及电场极化过程。理论分析表明,在热及电场极化条件下,正、负电极与玻璃分界面处的电场及电荷分布规律与其在反向、正向偏置的2个PN结处非常相似;利用PN结偏置模型,并考虑玻璃极化过程中电子的作用,修正了极化玻璃中电场分布和载流子运动方程及其边界条件,并解释了一些已有实验现象。     

Optical circular-polarization modulator employing tilt-poled electrooptic polymers

A polymer-based integrated circular-polarization modulator (CPM) is demonstrated in this paper. Tilted poling is adopted to achieve polarization conversion in the electrooptic (EO) polymeric waveguide and then realize the power balance between transverse electric and transverse magnetic modes. Detailed analysis and experiments on polarization conversion are presented. The tensor nature of poled polymeric materials is used to generate the phase difference. Contact poling is applied to perform tilted poling and activate the EO effect of polymeric materials. With appropriate voltage control, the polarization state of the output from the CPM can alternate between the left and right-hand-circular states. The extinction ratios at the 45/spl deg/- and -45/spl deg/-tilted linearly polarized states are larger than 25 dB.     

基于结模型的极化石英玻璃内建电场分析

用多载流子模型分析玻璃的热极化过程及其内部耗尽层的形成,极化电场的作用使载流子在玻璃内的迁移及由外界的注入最终形成交替的电荷分布,形成类似两个相向p-n结的结构。针对几种典型的p-n结电荷分布形式,计算了相应内建电场及二阶非线性极化率,极化完成后产生的宏观非线性效应主要由钠离子耗尽形成的突变结电场(~3′109V/m)决定,二阶非线性极化率的数值在0.2~1.2pm/V之间,耗尽区分布在阳极表面下25mm的范围。     

Numerical study on an equivalent source model for inhomogeneous magnetic field dosimetry in the low-frequency range

A new equivalent numerical source model is proposed for efficient dosimetric investigations in the low-frequency range. This approach allows the reproduction of complicated inhomogeneous magnetic field distributions around electronic appliances with full generality (i.e., supports three-dimensional vector fields). This paper investigates the accuracy of the equivalent source model using the geometry-based numerical reference model of a current loop to simulate the magnetic field distribution of a real electronic appliance. Good agreement between the equivalent source model and the reference is obtained with regard to the magnetic field distribution and the induced electric current density in a homogeneous human body model, respectively.     

Integrated optical waveguide polarizer based on photobleaching-induced birefringence in an electrooptic polymer

A TE-pass waveguide polarizer is fabricated by utilizing the photobleaching-induced birefringence at room temperature in an electrooptic polymer. The polarizer consists of the photobleached waveguide supporting only TE mode, which is integrated in the middle of the etched rib waveguide supporting both TE and TM modes. It has a simple structure and requires no high temperature process like poling. The measured polarization extinction ratio is about 21 dB at the wavelengths of 1.3 and 1.55 /spl mu/m, and the estimated excess loss is about 0.4 dB.     

A new method to characterize border traps in submicron transistors using hysteresis in the drain current

In this paper, a new method for measuring border trap density (n/sub BT/) in submicron transistors using hysteresis in the drain current is proposed. This method is used to measure energy and spatial distribution of border traps in jet vapor deposited (JVD) metal-silicon nitride-semiconductor field effect transistors (MNSFETs). The drain current transient varies linearly with logarithmic time suggesting that tunneling to and from the spatially uniform border traps is the dominant charge exchange mechanism. Using a feedback mechanism gate voltage transients are obtained from which n/sub BT/ is calculated. The prestress energy distribution in JVD MNSFETs is found to be uniform whereas the post-stress energy distribution shows a peak near the midgap.     

Self-field and geometry effects in transport current applications of multifilamentary Bi-2223/Ag conductors

This paper describes quantitatively the influence of the self-field and the cross-sectional geometry on the effective critical current and the ac losses in transport current applications of nontwisted multifilamentary Bi-2223/Ag conductors. The results are obtained with finite-element method simulations. The numerical implementation includes an anisotropic model for the dependence of the critical current density J/sub c/ and the power index n on the local parallel and perpendicular magnetic field components. The relation is given between the intrinsic critical current density and the effective critical current for different multifilamentary conductors. Shown are examples of the current and magnetic flux density distributions in order to demonstrate their effect on the ac losses in self-field.     

Low-threshold piezoelectric-strained InGaAs-GaAs QW lasers grown on (211)B oriented GaAs substrates

We report the operation of strained layer In/sub 0.20/Ga/sub 0.80/As quantum well lasers grown on (211)B GaAs substrates, thus incorporating a piezoelectric field. Growth was by atmospheric pressure metal-organic vapor phase epitaxy (MOVPE). The threshold current density of a 1000 /spl mu/m/spl times/75 /spl mu/m device is 91 A/spl middot/cm/sup -2/ and waveguide transparency is estimated at 32 A/spl middot/cm/sup -2/ for a simple separate confinement heterostructure (SCH) emitting at 982 nm.     

Simulation of the refractive index properties of a tunable-electron-density quantum well and reservoir structure

A numerical simulation of the optical properties of a novel In/sub x/Ga/sub 1-x/As/In/sub 1-y/Al/sub y/As multiple quantum well heterostructure with tunable charge density is presented. The influence of carriers and dopant ion charges on the electronic properties is simulated by a self-consistent Poisson-Schrodinger solver. The calculated optical constants of the quantum well reproduce well the experimental data. It appears that this model can easily be implemented to include current injection and used as a design tool to optimize the performance of optical modulator quantum well devices.<>