Fabrication and photoresponse of ZnO nanowires/CuO coaxial heterojunction

The fabrication and properties of n-ZnO nanowires/p-CuO coaxial heterojunction (CH) with a photoresist (PR) blocking layer are reported. In our study, c-plane wurtzite ZnO nanowires were grown by aqueous chemical method, and monoclinic CuO (111) was then coated on the ZnO nanowires by electrochemical deposition to form CH. To improve the device performance, a PR layer was inserted between the ZnO buffer layer and the CuO film to serve as a blocking layer to block the leakage current. Structural investigations of the CH indicate that the sample has good crystalline quality. It was found that our refined structure possesses a better rectifying ratio and smaller reverse leakage current. As there is a large on/off ratio between light on and off and the major light response is centered at around 424 nm, the experimental results suggest that the PR-inserted ZnO/CuO CH can be used as a good narrow-band blue light detector.     

Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors

In this study, titanium nitride (TiN) is synthesized using reactive sputtering for a self-aligned gate process. The Schottky barrier height of the TiN on n-GaN is around 0.5 to 0.6 eV and remains virtually constant with varying nitrogen ratios. As compared with the conventional Ni electrode, the TiN electrode presents a lower turn-on voltage, while its reverse leakage current is comparable with that of Ni. The results of annealing evaluation at different temperatures and duration times show that the TiN/W/Au gate stack can withstand the ohmic annealing process at 800°C for 1 or 3 min. Finally, the self-aligned TiN-gated AlGaN/GaN heterostructure field-effect transistors are obtained with good pinch-off characteristics.     

Improved light extraction of InGaN/GaN blue LEDs by GaOOH NRAs using a thin ATO seed layer

ABSTRACT: We investigated the effect of gallium oxide hydroxide (GaOOH) nanorod arrays (NRAs) on the light extraction of InGaN/GaN MQW blue light-emitting diodes (LEDs). The GaOOH NRAs were prepared on the indium tin oxide electrode (ITO) layer of LEDs by the electrochemical deposition method. The GaOOH NRAs with preferred orientations were grown on the ITO surface by sputtering a thin antimony-doped tin oxide (ATO) seed layer, which enhances heterogeneous reactions. The surface density and coverage were also efficiently controlled by the different growth voltages. For the LEDs with GaOOH NRAs grown at -2 V, the light output power was increased by 22% without suffering from any serious electrical degradation and wavelength shift, compared to the conventional LEDs.     

The nitridation of ZnO nanowires

ZnO nanowires (NWs) with diameters of 50 to 250 nm and lengths of several micrometres have been grown by reactive vapour transport via the reaction of Zn with oxygen on 1 nm Au/Si(001) at 550°C under an inert flow of Ar. These exhibited clear peaks in the X-ray diffraction corresponding to the hexagonal wurtzite crystal structure of ZnO and a photoluminescence spectrum with a peak at 3.3 eV corresponding to band edge emission close to 3.2 eV determined from the abrupt onset in the absorption-transmission through ZnO NWs grown on 0.5 nm Au/quartz. We find that the post growth nitridation of ZnO NWs under a steady flow of NH₃ at temperatures ≤600°C promotes the formation of a ZnO/Zn₃N₂ core-shell structure as suggested by the suppression of the peaks related to ZnO and the emergence of new ones corresponding to the cubic crystal structure of Zn₃N₂ while maintaining their integrity. Higher temperatures lead to the complete elimination of the ZnO NWs. We discuss the effect of nitridation time, flow of NH₃, ramp rate and hydrogen on the conversion and propose a mechanism for the nitridation.     

Fabrication of modified ultra high-temperature ceramic hybrid powders using in situ grown SiC nanowires

Ultra-high temperature ceramic (UHTC) hybrid powders modified using in situ grown SiC nanowires (SiCNWs) were successfully prepared via a simple catalytic method. The self-produce carbon and silicon source promoted the growth of SiCNWs during the pyrolysis process of ZrB₂ polymer precursors coated ZrB₂-SiC powders. The results showed that the growth of SiCNWs could be explained by a tip-growth model and vapor–liquid–solid (VLS) growth mechanism. The SiCNWs with diameter of 200 nm were single crystalline, and the content could be controlled by changing the catalyst content.     

Synthesis and field emission studies of tower-like GaN nanowires

Tower-like GaN nanowires were successfully fabricated on Au-coated Si substrates by chemical vapor deposition. The tower-like nanowire consisted of a nanowire at the center and microcrystal layers stacked one by one around the nanowire. The tower-like nanowires grew along the [0001] direction, and the exposed surfaces of the microcrystal layers are 101¯1 and 101¯1¯ facets. The growth mechanism of the tower-like GaN nanowires was proposed. The field emission property of tower-like GaN nanowires was tested. Due to the sharp tips, nearly vertical alignment and rough surfaces caused by the microcrystal layers, the tower-like GaN nanowires show excellent performance in field emission with a turn-on field of 2.44 V/μm which is lower than those of other GaN one-dimensional (1D) nanomaterials.

PACS

81.15.Gh; 68.37.Lp; 68.37.Vj     

弯曲状GaN纳米线的制备及光学性质研究

采用Ga2O3为Ga源,氨气为N源,通过高温化学气相沉积法制备了新颖的弯曲状Ga N纳米线,六方纤锌矿结构,直径约70~100 nm,长度最长可达几十微米,大部分纳米线呈链状,其生长机制呈VLS生长模式。拉曼光谱表明声子振动带有变宽的特征,基于浅施主态向浅受主态的跃迁包括缺陷层、表面态或残留杂质的影响,PL发光在436 nm和467 nm的出现宽峰。     

Synthesizing vertical porous ZnO nanowires arrays on Si/ITO substrate for enhanced photocatalysis

In this work, porous ZnO nanowires arrays (NWAs) which are perpendicular to the substrate were synthesized using facile and simple hydrothermal process approaches. The surface of ZnO nanowires (NWs) was increased by chemical electroless etching many macropores on them, which results in better photocatalytic activity, which is 1.73 times in terms of the rate constant for methyl orange (MO) degradation for porous ZnO NWAs compared with ZnO NWAs. The absorption of the vertical porous ZnO NWAs was considerably enhanced in the visible region. The optical band-gap became slightly narrower from 3.24 eV (ZnO NWAs) to 3.22 eV (porous ZnO NWAs). Thus, the vertical porous ZnO NWAs can be employed for various applications, such as gas sensor, photocatalyst, and solar cell.     

In-situ generation Cu2O/CuO core-shell heterostructure based on copper oxide nanowires with enhanced visible-light photocatalytic antibacterial activity

As visible light-driven photocatalysts in wastewater treatment, Cu₂O/CuO composites have garnered considerable attention. Herein, Cu₂O/CuO core–shell nanowires were fabricated directly on a Cu mesh using a simple two-step synthesis process involving a wet chemical method and rapid annealing. Unlike conventional composite nanowires, controllable core–shell nanowires exhibit high photoelectrochemical properties and overcome the problems associated with the recovery of powder-based photocatalysts. The presence and structural distribution of the Cu₂O/CuO core–shell nanowires were confirmed using X-ray diffraction, X-ray photoelectron spectroscopy and transmission electron microscopy. Among the samples subjected to different rapid annealing temperatures for 180 s, the sample exposed to rapid annealing at 350 °C achieved the highest photocurrent density of ?6.96 mA cm^?2. In the core–shell nanowires fabricated on the samples, the ratio of Cu₂O/CuO was 1:1. The photocatalytic activity of the Cu₂O/CuO nanowire samples was also determined by measuring methyl blue degradation to determine their applicability in wastewater treatment. A remarkable photocatalytic degradation rate of 91.6% was achieved at a loading bias voltage of ?0.5 V. The Cu₂O/CuO heterojunction enhanced the photodegradation of the samples because the different bandgaps improved the dissociation of the photogenerated electron–hole pairs. Furthermore, the antibacterial activity of the Cu₂O/CuO nanowires exhibited considerable resistance against Escherichia coli and photocatalytic antibacterial treatment for only 20 min under visible light killed 10⁶ CFU/mL of E. coli. Therefore, the Cu₂O/CuO controllable core–shell nanowires with a high photodegradation performance and excellent antibacterial activity under general illumination show diverse applications in water treatment.     

Growth of GaN nanowires on Si substrate using Ni catalyst in vertical chemical vapor deposition reactor

GaN nanowires were successfully grown on Ni-coated Si substrate by direct reaction of gallium with ammonia gas in a home-made vertical tubular chemical vapor deposition reactor. The growth of GaN nanowires was uniformly observed across the Si substrate surface, but the density and average diameter of the nanowires varied along the position of the substrate surface. At the position of 5 cm above Ga source surface, the growth of GaN crystal grains was observed with few nanowires. The length of the nanowires reached several micrometers. The clear lattice fringes in HRTEM image revealed the growth of good quality hexagonal single-crystal GaN nanowires. Photoluminescence of the GaN nanowires showed a strong band edge emission at the energy position of ∼3.4 eV with negligible deep level yellow emission. Field emission characteristics of the GaN nanowires showed that the turn-on field of GaN nanowires was ∼7.4 V/um with a field enhancing factor Βof ∼555. The catalytic growth mechanism of the GaN nanowires was discussed on the basis of experimental results in this work. This paper is dedicated to Professor Hyun-Ku Rhee on the occasion of his retirement from Seoul National University.     

Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates

In this study, we used metal organic chemical vapor deposition to form gallium nitride (GaN) epilayers on c- and a-axis sapphire substrates and then used the nanoscratch technique and atomic force microscopy (AFM) to determine the nanotribological behavior and deformation characteristics of the GaN epilayers, respectively. The AFM morphological studies revealed that pile-up phenomena occurred on both sides of the scratches formed on the GaN epilayers. It is suggested that cracking dominates in the case of GaN epilayers while ploughing during the process of scratching; the appearances of the scratched surfaces were significantly different for the GaN epilayers on the c- and a-axis sapphire substrates. In addition, compared to the c-axis substrate, we obtained higher values of the coefficient of friction (μ) and deeper penetration of the scratches on the GaN a-axis sapphire sample when we set the ramped force at 4,000 μN. This discrepancy suggests that GaN epilayers grown on c-axis sapphire have higher shear resistances than those formed on a-axis sapphire. The occurrence of pile-up events indicates that the generation and motion of individual dislocation, which we measured under the sites of critical brittle transitions of the scratch track, resulted in ductile and/or brittle properties as a result of the deformed and strain-hardened lattice structure.     

Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate

Zinc oxide thin films have been obtained on bare and GaN buffer layer decorated Si (111) substrates by pulsed laser deposition (PLD), respectively. GaN buffer layer was achieved by a two-step method. The structure, surface morphology, composition, and optical properties of these thin films were investigated by X-ray diffraction, field emission scanning electron microscopy, infrared absorption spectra, and photoluminiscence (PL) spectra, respectively. Scanning electron microscopy images indicate that the flower-like grains were presented on the surface of ZnO thin films grown on GaN/Si (111) substrate, while the ZnO thin films grown on Si (111) substrate show the morphology of inclination column. PL spectrum reveals that the ultraviolet emission efficiency of ZnO thin film on GaN buffer layer is high, and the defect emission of ZnO thin film derived from Zn_i and V_o is low. The results demonstrate that the existence of GaN buffer layer can greatly improve the ZnO thin film on the Si (111) substrate by PLD techniques.     

Nucleation control for the growth of vertically aligned GaN nanowires

ABSTRACT: Aligned GaN nanowire arrays have high potentials for applications in future electronic and optoelectronic devices. In this study, the growth of GaN nanowire arrays with high degree of vertical alignment was attempted by plasma-enhanced CVD on the c-plane GaN substrate. We found that the lattice matching between the substrate and the nanowire is essential for the growth of vertically aligned GaN nanowires. In addition, the initial nucleation process is also found to play a key role in creating the high-quality homoepitaxy at the nanowire-substrate interface. By controlling the nucleation stage, the growth of highly aligned vertical GaN nanowire arrays can be achieved. The reasons for the observed effects are discussed.     

Enhanced microwave-absorption properties of polymer-derived SiC/SiOC composite ceramics modified by carbon nanowires

Novel microwave-absorbing SiOC composite ceramics with dual nanowires (carbon nanowires (CNWs) and SiC nanowires) with high performances were fabricated by using the polymer-derivation method and heat treatment in Ar atmosphere. The introduction of CNWs in the amorphous SiOC ceramics promotes the ceramic crystallization into SiC nanoparticles and SiC nanowires at lower annealing temperatures, which leads to multi-phases and multiple nano heterogeneous interfaces. The distinctive architectures largely increase the interfacial and dipole polarizations of the composite ceramics. The CNWs/SiC/SiOC composite ceramics exhibit excellent microwave-absorption properties in the Ku band (12.4–18 GHz). The minimum reflection coefficient (RC) is -24.5 dB at a thickness of 1.8 mm, while the maximum effective absorption bandwidth (EAB, the corresponding frequency band in which RC is smaller than -10 dB) is 4.8 GHz at a thickness of 1.9 mm, which make the CNWs/SiC/SiOC composite ceramics promising electromagnetic-wave-absorbing materials.     

Fabrication and Microstructure of Silicon Nitride/Boron Nitride Nanocomposites

A chemical process for fabrication of Si₃N₄/BN nanocomposite was devised to improve the mechanical properties. Si₃N₄/BN nanocomposites containing 0 to 30 vol% hexagonal BN ( h -BN) were successfully fabricated by hot-pressing α-Si₃N₄ powders, on which turbostratic BN ( t -BN) with a disordered layer structure was partly coated. The t -BN coating on α-Si₃N₄ particles was prepared by reducing and heating α-Si₃N₄ particles covered with a mixture of boric acid and urea. TEM observations of this nanocomposite revealed that the nanosized hexagonal BN ( h -BN) particles were homogeneously dispersed within Si₃N₄ grains as well as at grain boundaries. As expected from the rules of composites, Young's modulus of both micro- and nanocomposites decreased with an increase in h -BN content, while the fracture strength of the nanocomposites prepared in this work was significantly improved, compared with the conventional microcomposites.     

Fabrication and mechanical properties of carbon fibers/lithium aluminosilicate ceramic matrix composites reinforced by in-situ growth SiC nanowires

To improve the mechanical properties of carbon fibers/lithium aluminosilicate (C_f/LAS) composites, C_f/LAS with in-situ grown SiC nanowires (SiC_nw-C_f/LAS) were prepared by chemical vapor phase reaction, precursor impregnation, and hot press sintering, consecutively. The effect of multi-scaled reinforcements (micro-scaled C_f and nano-scaled SiC_nw) on the mechanical properties was investigated. The phase composition, microstructure and fracture surface of the composites were characterized by XRD, Raman Spectrum, SEM, and TEM. The morphology of SiC_nw has a close relation with the content of Si. Microstructure analysis suggests that the growth of SiC nanowires depends on the VLS mechanism. The multi-scale reinforcement formed by C_f and SiC_nw can significantly improve the mechanical properties of C_f/LAS. The bending strength of SiC_nw-C_f/LAS reaches to 597 MPa, achieving an increase of 19% to C_f/LAS. Moreover, the samples show a maximum fracture toughness of 11.01 MPa m^1/2, achieving an increase of 46.4% to C_f/LAS. Through analysis of the fracture surface, the improved mechanical properties could be attributed to the multi-scaled reinforcements by the pull-out and debonding of C_f and SiC_nw from the composites.     

Large-scale synthesis of SiC/PyC core-shell structure nanowires via chemical liquid-vapor deposition

In carbon/carbon (C/C) composites, SiC/PyC core-shell structure nanowires were successfully fabricated via chemical liquid-vapor deposition (CLVD). The influences of heat-treatment temperature on the microstructure and composition of SiC nanowires were studied, and meanwhile the growth mechanism of SiC nanowires was discussed. Additionally, the microstructure and morphology of SiC/PyC core-shell structure nanowires were also investigated. The results displayed that the low heat-treatment temperature could not meet the requirements of SiC nanowires growth, but the too high temperature made the nanowires appear agglomerate easily. Only when the heat-treatment temperature was 1800 °C, SiC nanowires possessed a uniform distribution. The diameter of SiC nanowire was about 300 nm, and there was a SiO₂ layer with the thickness of about 1 nm existing on the surface of SiC nanowire. The growth behavior of SiC nanowire was governed by vapor-solid (V–S) mechanism. After the PyC deposition, SiC/PyC core-shell structure nanowires were constructed, and the nanowires were about 450 nm in diameter. These nanowires displayed a core-shell structure with three layers, which were SiC nanowire core, SiO₂ interlayer and PyC shell, respectively. Meanwhile, SiC/PyC core-shell structure nanowires connected the matrices with each other, and the core-shell structure nanowires generated a stable network.     

A novel method for the synthesis of Fe3O4 nanoparticles/CdS nanowires heterostructure nanocomposite and uses in photodegradation of methylene blue

We report here a simple, efficient, practical, and novel method for the preparation of Fe₃O₄ nanoparticles (NPs)/CdS nanowires. The CdS nanowire/Fe₃O₄ NP reported here was characterized by transmission electron microscopy (TEM), X-ray Diffraction (XRD), vibrating sample magnetometer (VSM), and energy-dispersive X-ray. Cadmium diethyl dithiophosphate has been used as a 3 in 1 precursor (cadmium, sulfur, and ligand source) for the synthesis of high-quality one-dimensional Fe₃O₄ NPs/CdS nanowires using a simple hydrothermal method in the presence of Fe₃O₄ NPs in water. Photocatalytic activity studies show that the nanocomposite has good photocatalytic activity toward the photodegradation of methylene blue in an aqueous solution.     

Fabrication of cobalt nanowires from mixture of 1-ethyl-3-methylimidazolium chloride ionic liquid and ethylene glycol using porous anodic alumina template

Porous anodic alumina template is synthesized by electrochemical anodization of aluminum and used to grow cobalt nanowires. The cobalt nanowires produced by direct current electrodeposition are characterized by field emission scanning electron microscopy, transmission electron microscopy, X-ray diffraction and physical property measurement system. Test results indicate that the average diameter of cobalt nanowires is about 45 nm, which is generally the same as the pore diameter of porous anodic alumina template, and the cobalt nanowires electrodeposited from mixture of 1-ethyl-3-methylimidazolium chloride ionic liquid and ethylene glycol have a smoother surface and better magnetic properties than cobalt nanowires electrodeposited from aqueous solution, and they show a better squareness. Therefore it can be concluded that the cobalt nanowires electrodeposited from mixture of 1-ethyl-3-methylimidazolium chloride ionic liquid and ethylene glycol using porous anodic alumina template can be used as a perpendicular magnetic recording film.     

On the phenomenon of large photoluminescence red shift in GaN nanoparticles

We report on the observation of broad photoluminescence wavelength tunability from n-type gallium nitride nanoparticles (GaN NPs) fabricated using the ultraviolet metal-assisted electroless etching method. Transmission and scanning electron microscopy measurements performed on the nanoparticles revealed large size dispersion ranging from 10 to 100 nm. Nanoparticles with broad tunable emission wavelength from 362 to 440 nm have been achieved by exciting the samples using the excitation power-dependent method. We attribute this large wavelength tunability to the localized potential fluctuations present within the GaN matrix and to vacancy-related surface states. Our results show that GaN NPs fabricated using this technique are promising for tunable-color-temperature white light-emitting diode applications.