纳米硅基薄膜光致发光机制的初步研究

用等离子体化学气相沉积方法制备氢化非晶硅合金薄膜，经高温退火及高温氧化可制备纳米尺寸的晶粒，室温下能发出可见光。实验表明，高温氧化后的纳米颗粒被镶嵌在ＳｉＯ２的无序网络中，其晶粒尺寸减少，而发光强度增强，发光峰位置向短波方向移动。这些结果说明，发光来源于纳米晶粒的量子尺寸效应和覆盖晶粒表面的ＳｉＯ２层的发光中心。     

复合薄膜研究的进展

复合薄膜材料由于具有传统复合材料和薄膜材料两者的优点，正成为复合材料的重要分支而越来越引起广泛的重视和深入的研究。它可以把各层薄膜材料的优异性能结合起来，从而克服各自的弱点，达到特定的应用目的。本文简要综述了近十年来复合薄膜领域的研究进展，介绍了多层复合薄膜的制备方法和常用表征手段并总结了目前复合薄膜材料领域中存在的主要问题。     

金刚石薄膜研究的进展

一、概况金刚石墨膜可以充分发挥金刚石优异的性能,可广泛应用于力学、热学、电子学、光学等多项尖端技术领域,如刀具、集成电路和激光的散热片,红外窗口、高温半导体等,是一种很有发展前途的新型的功能材料。由于在许多不同材料上可以以气相沉积金刚石薄膜,这种涂覆技术的进展更激起了大家的兴趣,具有各种形态和不同物理性质的金刚石薄膜已经获得成功,在某些情况下,已经确定了生产金刚石涂层零件的技术     

纳米硅薄膜制备技术进展

本文综述了纳米硅薄膜制备新技术的进展。着重介绍了高氢稀释硅烷蚀刻法，微波氢基团增强化学气相沉积，逐层法和高频数值等离子体化学气相沉积技术制备纳米硅薄膜的沉积过程和生长机制．本文指出氢基团为各项新技术发展的关键并将在今后纳米硅薄膜制备技术发展中起重要作用。     

AFM研究表面活性剂对Fe2O3纳米薄膜形貌的影响

用ＦｅＣｌ３为起始原料水解法制备了Ｆｅ２Ｏ３纳米薄膜。实验中加入了不同的表面活性剂改善胶体与基片的附着力。使用原子力显微镜（ＡＦＭ）对簿膜的形貌进行了表征,讨率了表面活性剂影响簿膜中氧化铁纳米颗粒形貌的因素。     

纳米复合薄膜的制备及其应用研究

纳米复合薄膜材料于具有传统复合材料和现代纳米材料两者的优点,正成为纳米材料的重要分支而越来越引起广泛的重视和深入的研究。本文全面介绍了纳米复合薄膜的发展历史,制备方法,薄膜性能及其应用前景,提出了纳米复合薄材料研究的关键问题以及今后的发展方向。     

纳米TiO2薄膜表面微区分析的研究进展

在简要介绍纳米TiO2功能薄膜各种制备技术的基础上，着重对近年来研究TiO2薄膜及其复合薄膜采用的微区分析技术及应用研究进展进行了综述，并比较了各种微区分析技术的优缺点。     

功能薄膜的研究动向

概况近年来,随着科学技术的不断发展,特别是微电子学和高温工程学的显著进步,对材料提出了许多新的特殊功能(如耐高温,耐腐蚀,高强度,高硬度,耐磨损,光、电、磁等性能)的要求。为了满足这些要求,材料工作者一是着手研究材料內部的结构,如非晶、微晶、高完整性结晶等问题,二是着手研究材料表面性能,即材料表面技术。材料表面技术日益受到重视的原因,是由于现代技术对于材料多方面性能的要求,     

硬质合金YG8上金刚石薄膜的成核研究

利用调节基底表面碳流量的方法促进了热丝ＣＶＤ中硬质合金ＹＧ８上金刚石薄膜的成核，使成核期大为缩短，根据扫描电镜和拉曼光谱对沉积结果的分析，研究了ＹＧ８上金刚石薄膜成核的机理。     

Numerical simulation of laser-induced thin film delamination

Laser-induced thin film spallation has been developed to be one of the most powerful tools for quantitative measurement of thin film interfacial adhesion. High-energy laser pulse absorption generates stress pulse that can be used to delaminate a thin film-substrate interface. Interfacial strength is obtained from the measured surface motion of the thin film using elastic wave mechanics. Due to the short duration of the stress pulses, the dynamic interfacial debonding process usually happens within nanosecond duration, thus the interfacial strength measurement pertains to the intrinsic adhesion of the interface. In this paper, we performed detailed numerical simulations on various aspects of this experimental technique. Combining with experimental observations, the simulation results provide explanations of various phenomena and insights on the fundamental mechanisms of the laser-induced interface debonding process.     

Reliability and robustness of thin film composite resistor networks

Reliability of composite NiCr–tantalum nitride resistors was tested according to MIL STD 883 procedures. It was shown analytically and experimentally that these resistors are robust and stable, and they can thus be recommended for use in precise and reliable integrated circuits.     

Intensity profiles along the RHEED streaks for various thin film surface morphologies

Intensity distribution profiles of reflection high energy electron diffraction (RHEED) along the (00) and (01) reciprocal rods are calculated as a function of the grain width, the height difference between neighbouring grains (intergrain roughness), and the surface roughness of the individual grain (intragrain roughness). The calculations include the refraction and the absorption of electron beams and the shadowing effect by the neighbouring grains. The calculations show that the major intensity moves from the three-dimensional (3D) Bragg diffraction to the specular beam as the grain width increases and that a remarkable change in the intensity profiles occurs when the grain width becomes comparable with the decay length of the electron beam in the film. Not only the growth of 3D Bragg peaks but also shifts of the peak positions, induced by the increase of the intra- and intergrain roughness, are simulated. The calculated spectra are compared with the experimental intensity profiles along the streaks measured together with a RHEED intensity oscillation during a homoepitaxy of Ag films.     

Manufacturing of CdTe thin film photovoltaic modules

The technology to fabricate CdTe/CdS thin film solar cells can be considered mature for a large-scale production of CdTe-based modules. Several reasons contribute to demonstrate this assertion: a stable efficiency of 16.5% has been demonstrated for 1 cm² laboratory cell and it is expected that an efficiency of 12% can be obtained for 0.6 × 1.2 m² modules; low cost soda lime float glass can be used as a substrate; the amount of source material is at least 100 times less than that used for single crystal modules and is a negligible part of the overall cost. The fabrication process can be completely automated and a production yield of one module every 2 min can be obtained, which implies a production cost substantially less than 1€/W_P. A further cost reduction will render this kind of energy production competitive with the energy obtained from fossil fuels by approaching the so-called grid-parity. Some new companies have recently announced the start of production or plan to do so in the near future. Many of these plants are located in Germany, some in the USA. In Italy, a new company has been constituted in 2008, with the aim of building a factory with a capacity of 18 MW/year. In this article, we will describe and compare the basic principles of CdTe solar cells and modules. We will include an overview of the potentials of these technologies and of the R&D issues under investigation. This paper describes how the large-area mass production of CdTe solar modules is realized in the Italian factory and presents a worldwide overview of the current production activities.     

Recent developments in thin film electro-acoustic technology for biosensor applications

The article reviews recent developments of the thin film electro-acoustic (TEA) technology in view of the design and fabrication of micro-acoustic transducers for biosensor applications. The use of the TEA technology leads to transducer miniaturisation, compatibility with the IC technology, possibility for multiplexing, decrease in fabrication cost, reduction of consumables, mass fabrication, etc. Focus lies on the design, fabrication and evaluation of the transducer performance in liquid media as judged by electro-acoustic behaviour and ultimately by mass and viscosity resolution. The analysis draws the conclusion that the thickness excited quasi-shear thin film bulk acoustic resonator technology is far ahead in its development with regard to other alternative approaches in terms of both performance and level of maturity. Consequently, the main aspects of the quasi-shear thin film bulk acoustic resonator (FBAR) technology from film synthesis and fabrication through to performance evaluation and demonstration are reviewed in detail.     

The effects of post-annealing on the performance of ZnO thin film transistors

In this study, we investigated the effects of a post-annealing process on the performance and stability of zinc oxide thin film transistors fabricated by atomic layer deposition. After the post-annealing process in ambient air at 250 °C for 2 h, the value of the saturation mobility increased from 1.2 to 1.8 cm/Vs, the subthreshold swing decreased from 0.53 to 0.34 V/decade, and the I_on/I_off ratio increased from 3.1 × 10⁶ to 1.7 × 10⁷. The positive bias stability was also enhanced after post-annealing. These results are related to the formation of another phase in which the difference of enthalpy between the semiconductor material and contact metal electrode causes the carrier concentration at the metal/semiconductor interface to increase, leading to decreased contact resistivity. Additionally, internal modification of the semiconductor/dielectric interface and/or improving the semiconductor structure, which is related to a change in the oxidation state of Zn through the incorporation of oxygen and/or hydroxide, can result in improved device performance.     

Dynamics of a thin viscoelastic film on an inclined plane

A theory for two-dimensional long and stationary waves of finite-amplitude on a thin viscoelastic fluid (weakly elastic) layer flowing down an inclined plane is investigated. A set of exact averaged equations for the viscoelastic film flow system is described and linearised stability analysis of the uniform flow is performed using normal-mode formulation and the critical condition for linear instability is obtained. The linearised instability for the permanent wave equation, consistent to the second order in (, – unperturbed film thickness, L – characteristic length) is examined and the eigenvalue properties of the fixed points are classified in various parametric regimes. The possible domains of heteroclinic orbits and the regions of possible nonlinear bifurcations are analysed for different values of viscoelastic parameter Γ. Numerical integration of the permanent wave equation as a third order dynamical system is carried out. While wave transitions in real life involve complex spatio-temporal dynamics and many of these transitions lead to chaotic waves that are not stationary traveling waves, bifurcation of stationary traveling waves has been examined as a preliminary study of the more complex transitions. Different bifurcation scenarios leading to multiple hump solitary waves or leading to chaos are exhibited in the parametric space. The results are compared and contrasted with the Newtonian results. A summary of the bifurcation scenarios in the We versus cot θ/Re plane is obtained for different values of viscoelastic parameter Γ, when Re ≈ 13.33 and Re = 100.     

Properties of n-type ZnN thin films as channel for transparent thin film transistors

In this work we fabricated, by rf magnetron sputtering from a ZnN target, zinc nitride thin films and examined their properties in order to be used as channel layer in thin film transistors. The films were deposited at 100 W rf power and the Ar pressure was 5 mTorr. The zinc nitride thin films were n-type, and depending on the thickness they exhibited low resistivity (10-10^− 2 Ohm?cm), high carrier concentration (10¹⁸-10²⁰ cm^− 3) and very low transmittance values due to the excess zinc in their structure. After annealing at 300 °C, in flowing nitrogen, the films became more conductive, but annealing at higher temperatures deteriorated the electrical properties and became transparent. Transparent thin film transistor having zinc nitride as channel layer exhibited promising transistor characteristics after nitrogen annealing. Improvements in output transistor characteristics due to both material (zinc nitride) and transistor optimization are addressed.     

电弧离子镀纳米TiO2光催化薄膜

采用电弧离子镀法在普通玻璃表面制备透明的TiO2薄膜,AFM、XRD分析TiO2薄膜表面形貌和结构,结果表明经过500℃退火后TiO2薄膜主要为锐钛矿结构.对纳米TiO2薄膜进行了亲水性研究和光催化降解有机物甲基橙和罗丹明B的研究,发现在紫外光照射下纳米TiO2薄膜表现出强光催化活性和超亲水性.     

Modelling of boron nitride: Atomic scale simulations on thin film growth

Molecular-dynamics simulations on ion-beam deposition of boron nitride are presented. A realistic Tersoff-like potential energy functional for boron nitride, which was specially fitted to ab initio-data, has been used. The impact of energetic boron and nitrogen atoms on a c-BN target is simulated with energies ranging from 10 to 600 eV. The structural analysis of the grown films shows that a loose, dominantly sp²-bonded structure arises at high ion flux. In no case the formation of a sp³-bonded phase is observed, but the obtained films partially reveal textured basal planes as found in experiment. Two different growth regimes are identified for ion energies above and below 100 eV.