半绝缘InP中Si~++P~+双注入的电学特性

研究了在200℃热靶条件下经Si~+单注入和S~++P~+双注入的半绝缘InP常规热退火和快速热退火后的电学特性。热退火后,双注入样品中的电学性能优于单注入样品。采用快速热退火后,双注入的效果更加显著。Si~+150keV,5×10~(14)cm~(-2)+P~+160keV,5×10~(14)cm~(-2)双注入样品经850℃、5秒快速效退火后,最高载流子浓度达2.6×10~(19)cm~(-3),平均迁移率为890cm~2/V·s。     

半绝缘InP注硅的无包封退火

掺Fe半绝缘 InP材料室温下注入Si~+,在 650℃无包封退火15 min,辐射损伤已可消除;但是Si的充分电激活则需要较高的退火温度.无包封下即使在 750℃退火 30 min,样品表面貌相也未被破坏.用能量E=150keV注入Si~+、剂量φ为1× 10~(13)、5 × 10~(13)和1×10~(14)cm~(-2)的样品.在750℃无包封退火15min,最高载流子浓度n_s分别是8×10~(13)、3.9×10~(13)和 6.3 ×10~(13)cm~(-2),其中φ为 1×10~(13)cm~(-2)的样品,霍耳迁移率μ_n为 2100 cm~2/V·scc.     

Si~+注入SOS中退火固相外延再生长改善结晶质量

本文研究Si~+室温深注入(150～160keV,1～3×10~15/cm~2)SOS中600+1050℃两步退火固相外延再生长改善SOS膜界面附近结晶质量和Si~+室温浅注入(85keV,3×10~(15)/cm~2)SOS中600+1050℃两步退火固相外延再生长改善SOS膜表面结晶质量的工艺.180keVH~+沟道效应—背散射测量表明,两步Si~+注入和两步退火团相外延再生长工艺能够有效地改善SOS膜结晶质量°表面归一化最小产额x_o、界面最小产额x_i 和退道率dx/dz分别减小到0.06、0.12和0.19/μm.     

10keV B~+注入预非晶化Si的剩余缺陷和浅结

<正> 一、问题的提出和实验方法 在低能注入B~+浅结的过程中,沟道效应难以避免。为避免B~+注入的沟道效应,本文采用100keV下5×10~(15)cm~(-2)的Si~(29)注入n-Si<100>进行非晶化处理。继而进行了10keV,1×10~(15)cm~(-2)的B~+注入形成浅结,然后对样品进行快速热退火(RTA)处理,并观察界面缺陷的     

Si,As双注入GaAs的RTA研究

本文研究了Si注入GaAs的快速退火(RTA)特性。得出930—950℃退火5s为最佳退火条件。测量结果表明,当注入剂量大于10~(13)cm~(-2)时,电子浓度呈饱和现象。为提高电子浓度本文提出Si,As双注入GaAs的方法,研究了(60—80)keV,(5—10)×10~(14)Si/cm~2+(150—180)keV,(5—30)×10~(14)As/cm~2注入并经RTA后的电特性。结果表明,双注入后样品中电子浓度有明显提高,对80keV,10~(15)Si/cm~2+150keV,3×10~(15)As/cm~2来说,电子浓度大于10~(19)cm~(-3)。TEM观察表明,双注入样品的剩余缺陷密度大大低于单注入的情况。本文并对双注入补偿机理进行了讨论。     

硅中离子注入层的红外瞬态退火及退火后残留深能级缺陷的DLTS研究

本文研究了硅中离子注入层的红外瞬态退火,证实了它与常规热退火具有相同的再结晶机理——固相外延再结晶过程.对于注As~+和注B~+样品的测试表明,红外瞬态退火具有电激活率高、缺陷消除彻底和注入杂质再分布小等优点.为了研究退火后残留深能级缺陷的电特性,对于离子注入MOS结构进行了DLTS测试.对于通过920A SiO_2膜,注入剂量为 1×10~(12)cm~(-2)B~+、能量为60 keV的样品,经常规热退火和红外瞬态退火后分别测到了深能级 E_T-E_v=0.24±0.02eV和E_r-E_v=0.29±0.02eV;并对引入这些深能级的缺陷进行了讨论.     

离子注入对LPCVD淀积非晶硅固相外延的影响

应用高剂量(5×10~(15)/cm~2)的Si~+、P~+离子注入,成功地实现了LPCVD淀积在硅衬底上的非晶硅薄膜的固相外延。本文还研究了Si~+、P~+注入对低压气相淀积非晶硅薄膜固相外延的影响。实验发现,~(31)P~+能加速固相外延的速率,改善再结晶膜的质量,并能抑制SiO_2衬底上的成核,从而为固相生长绝缘衬底上的单晶薄膜(SOI)创造了条件。     

B~+和P~+离子注入在n-Si中产生缺陷能级的进一步研究

用快速的电流DLTS和最低温度达10K的低温样品架对过去报道过的n型Si中B~+,200keV,2.5 × 10~(11)cm~(-2)和P~+,240keV,4.4 × 10~(11)cm~(-2)离子注入产生的新能级重新作了测量.在注B~+样品中,发现三个新的电子陷阱E_6(0.16),E_7(0.15),E_8(0.08),其中E_7具有很大的浓度.在注P~+样品中,发现二个新的电子陷阱,其中E_7与注硼样品属于同一种中心,因此可能与硼无关.另一个E_3＂(0.09).     

锗离子注入硅单晶的非晶化及二次缺陷的研究

本文用卢瑟福背散射(RBS),横断面透射电子显微镜(XTEM)及微区电子衍射技术研究了锗离子注入硅单晶中的非晶化及二次缺陷的特性。离子注入能量为400keV,剂量范围为1×100~(13)至1×10~(15)/cm~2,离子束流强度为0.046μA/cm~2,注入温度为室温。实验发现,在本工作的离子注入条件下,入射锗离子使硅单晶表面注入层开始非晶化的起始剂量大于0.6×10~(14)/cm~2。形成一个完整匀质表面非晶层所需的临界剂量为1×10~(15)/cm~2。热退火后产生的二次缺陷特性极大地受到退火前样品注入层非晶化程度的影响。     

Si~+注入GaAs红外快速退火实验研究

本文研究了GaAs MESFET有源层和n~+层Si~+注入的红外快速退火行为。用该技术获得的有源层和n~+层的载流子浓度与迁移率分别为1～2×10~(17)cm~3和3000～3500cm~2/V·s以及1～2×10~(18)cm~(-3)和1500cm~2/V·s,制成的单栅FET每毫米栅宽跨导为120mS,在4GHz下,NF=1.1dBGa=12.5dB。实验证实了快速退火比常规炉子热退火具有注入杂质再分布效应弱和对衬底材料热稳定性要求低的优点。对两种退火的差别在文中也作了讨论。     

Wireless communications + + +

Commencing with the advancements that may be expected in 3G during the first decade of this century, we move on to anticipate subsequent developments based on what society might need and the technologies that may be required. The near demise of mobile satellite networks and removal of radio broadcasting from potential mobile radio bands will provide the necessary bandwidth for high capacity, high quality multimedia mobile services utilising a dense concentration of fibre networks coupled to radio cells of all sizes. The integration of many factors from high aerial platforms (haps) (that are located in the stratosphere and from terrestrial cells that can be adjusted in size and moved instantly to suit teletraffic changes) to picocells, body-LANs to the fixed network, software agents to soft telecommunications, will be discussed. Finally the possibility of our networks metamorphosing into a global brain, and how man-kind might adapt to this supra-intelligence will be addressed.     

BF_2~+,F~+ +B~+和Ar~++B~+注入硅快速退火剩余损伤及对浅P~+N结的影响(英文)

The residual damage is analysed by transmission electron microscopy (TEM) for BF2+, F+ + B+ and Ar+ + B+ implanted silicon after rapid thermal annealing(RTA). And the reverse leakage current of the implanted diodes is measured using a FJ-356 electrometer. The results show that 1 ) The residual damage due to BF2+ implantation is less than that of F+ + B + and Ar++ B+ implantation. 2) The reverse leakage current of BF2+ implanted diodes is less than that of F+ + B+ and Ar++ B + implanted diodes. 3) The reverse leakage current of F++B+ and Ar++ B+ implanted diodes increases with the increase of F+ and Ar+ energies, respectively. Therefore the physical behaviour of the interaction between molecular ion and silicon is different from that of the interaction between individual atom ion and silicon.     

TVPON＋TVPCN＋EPON＋EPCN技术的实践应用

利用TVPON＋TVPCN＋EPON＋EPCN技术在有线广播电视网络中的完美结合,既实现了传统的广播式大容量信息的下行传输,又实现了互联网接入的双向宽带功能,并对接入网中的有源设备进行全程全网管理。     

半绝缘GaAs中Mg~++P~+双注入研究

本文对Mg~+和P~+双离子注入半绝缘GaAs的行为进行了研究.发现不论是常规热退火还是快速热退火,共P~+注入都能有效地提高注入Mg杂质的电激活率,其效果优于共As~+注入,共P~+注入的最佳条件是其剂量与Mg~+离子剂量相同,电化学C—V测量表明,双注入样品中空穴分布与理论计算值接近,而单注入样品中则发生严重偏离,快速热退火较常规热退火更有利于消除注入损伤.     

Small-signal noise behaviour of companion p+-n-p+ and p+-n-v-p+ punchthrough microwave diodes

The frequency and current dependence of the noise factor of tuned microwave amplifiers, utilising punchthrough injection transit-time diodes, has been determined. Noise factors as low as 10 and 11 dB were obtained from companion p+-n-p+ and p+-n-v-p+ structures, respectively, when tuned to frequencies in the vicinity of 7.5 GHz.     

Experimental comparison of silicon p+-n-p+ and Cr-n-p+ transit-time oscillators

Punchthrough transit-time diodes have been constructed with both Schottky-barrier and diffused-junction emitters. The microwave and d.c. characteristics of these devices are strikingly similar. Either construction technique appears to be suitable for the future development of low-noise microwave sources.     

p+-n-p+ BARITT-diode design

p+-n-p+ BARITT diodes have been designed to give maximum output power at X band frequencies. Computed output power against frequency shows good agreement with measured powers. The dominant effect of the maximum n region electric field on output power is demonstrated.     

C／C＋＋TEST

C++Test是来自于ParasSoft公司的用于C及C++单元测试的新工具,它使得发现和修改以前会迅速扩展并蔓延成更严重问题的错误变得更容易和有效.使用C++Test工具是完全自动化的,为了更快的测试,只需在文件中依次点击C++Test的打开、建立,就会完成测试.为了进行完整的测试,可以修改测试参数以使C++Test自动完成白盒、黑盒及逆向测试. 白盒测试用于测试代码结构.C++Test通过自动产生并运行测试用例,当它们接受不可预知输入时来检查文件、类、方法的行为.     

Temperature-dependent characteristics of MBE-grown GaAs p+-v-p+-v-n+ regenerative switching device

The thick GaAs p+-v-p+-v-n+ regenerative switching diode was fabricated by the MBE technique on n+-GaAs substrate. Temperature-dependent operational parameters, including switching voltage VS, switching current IS, holding voltage VH and holding current I, were investigated. It is found that VS, VH and IH decrease from 19 V, 3.6 V and 1.2 mA to 10.2 V, 2 V and 130 ?A, respectively, with decreasing measurement temperature from room temperature to 77 K, while IS increases from 5 ?A to 45 ?A. However, VS takes a more complicated `M?-shape characteristic from 77 K to 323 K which indicates a more complicated transport mechanism.     

基于Linux+Apache+Mysql+PHP OA系统的设计与实现

办公自动化系统(OA)是电子化信息系统(EMIS)的典型应用,在中小企业中有着广泛的运用,本文介绍是以Linux Apache Mysql PHP OA系统的基本架构和主要功能,并给出其中特有功能的系统的实现。