基于频率响应掩蔽法的宽带滤波器的设计

针对FIR滤波器设计中锐截止宽带滤波器阶数较高、计算复杂的问题,提出用频率掩蔽法,先设计一个过渡带为目标过渡带的L倍的原型滤波器,其实现复杂度远小于所要求的滤波器,依据L倍内插滤波器的过渡带宽是原型滤波器的1/L的原理,利用一对互补滤波器和掩蔽滤波器,得到了较低计算复杂度的锐截止宽带滤波器。     

余弦调制滤波器组的原型滤波器设计

该文提出了一种近似重构的余弦调制滤波器组的原型滤波器设计方法。该方法将原型滤波器表示成A(z2)B(z)的形式(其中B(z)是最平坦FIR滤波器),通过优化低阶FIR滤波器A(z)的通带边缘频率,间接设计原型滤波器。文中给出的设计例子表明,该方法可获得很高阻带衰减的滤波器组。     

一种适合于窄过渡带FIR滤波器设计的方法

介绍了一种适合于窄过渡带FIR(有限冲击响应)滤波器设计的方法———频罩法,首先设计一个原型滤波器,将该滤波器每个延迟部分延迟M点可产生尖锐过渡带,对其施加不同中心频率的低阶频罩滤波器,即可得到所需的尖锐带通滤波器,该方法实现窄带FIR滤波器所需的阶数仅为直接设计的50%左右;然后讨论了其VHDL(超高速集成电路硬件描述语言)实现算法,最后介绍了利用FPGA(现场可编程门阵列)实现此系统的设计方案,并分析了实际硬件设计过程中涉及的问题。     

星载柔性转发器中一种近似精确重构原型滤波器的设计

 宽带柔性转发器作为下一代卫星通信有效载荷,采用星上数字信道化处理,可以很好地解决传统有效载荷存在的问题,实现卫星信号任意频段、任意带宽之间的灵活交换。该文分析了柔性转发器中调制滤波器组的性能特性,将滤波器组的设计转换为原型滤波器的设计,提出了一种近似精确重构的原型滤波器设计方法。该方法通过间接设计的思想,首先采用Parks-McClellan算法设计得到低阶的双通道滤波器h⁽²⁾(n)和实对称FIR滤波器g(n),然后利用g(n)实现对h⁽²⁾(n)的非零值M倍内插与2倍抽取,得到近似精确重构的原型滤波器h^(M)(n),从而避免了IFIR法设计过程中镜像分量产生的性能损失。仿真结果表明,采用该文方法设计得到的调制滤波器组较传统设计方法表现出良好的性能。     

锐截止中频采样滤波器的设计与实现

中频采样是数字正交鉴相系统中的一项关键技术,具有锐截止特性的中频采样滤波器可以改善鉴相系统的性能.在分析锐截止特性FIR滤波器如何提升中频采样性能的基础上,针对低通滤波法鉴相系统中的滤波器设计,分析了简化滤波器设计的条件,并推导了滤波器的简化表示,从而提出了一种设计锐截止中频采样滤波器的有效方法,使得所需的运算量及存储量大幅度缩减.最后,提出了一种基于IP(Intelligent Property)核的中频采样滤波器的具体实现方案.     

M带余弦调制滤波器组的设计

本文提出了一种近似重构的M带余弦调制滤波器组的设计方法.该方法将原型滤波器表示成A(z^L)B(z)的形式,通过优化低阶FIR滤波器A(z)的通带边缘频率,间接设计原型滤波器.在优化过程中,采用常用的Parks-McClellan算法设计滤波器A(z).文中给出的设计例子表明,该方法可获得很高阻带衰减的滤波器组.     

一种基于频率响应屏蔽技术的FIR滤波器设计新方法

提出了一种设计高效窄过渡带宽FIR滤波器的新方法。该方法以传统的频率响应屏蔽(FRM)方法为基础,通过选择特定的原型滤波器来降低合成的数字FIR滤波器的复杂度。本文研究了该方法的原理、实现结构和设计方法,并通过设计实例证明了此方法的有效性。     

基于梳状滤波器的FIR数字滤波器设计

根据子滤波器抽头级联法,采用梳状滤波器作为子滤波器,设计了一种新型FIR数字滤波器.通过C语言编程的方法来选择子滤波器阶数,使原型滤波器的过渡带宽度最宽.采用经过变换的通带和阻带边界频率来进行原型滤波器的设计,使得原型滤波器的阶数比传统实现方法低很多.采用该方法实现的FIR滤波器乘法器个数比传统方法少很多,硬件实现更为简单,大幅减小了硬件开销.该方法已成功用于回声消除和噪声抑制芯片,FIR滤波器的面积约为传统方法的50%,用180 nm 3.3 V/1.8 V 6层金属混合信号CMOS工艺流片,结果表明,对于过渡带较窄的滤波器,该方法非常有效.     

改进型主成份分析外插脉冲响应滤波器设计

外插脉冲响应(EIR)滤波器设计技术是一种低复杂度有限冲击响应(FIR)滤波器设计技术,而基于主成份分析(PCA)的EIR(PCA-EIR)滤波器设计技术是一种有效(算法执行简单,效果较好)的EIR滤波器设计技术.PCA-EIR技术通过对由原型FIR滤波器系数组成的系数矩阵采用PCA技术进行降维来近似合成原型FIR滤波器,以达到降低原型滤波器硬件执行复杂度的目的.本文提出了一种简单有效的改进型PCA-EIR技术,其基本思想是将系数矩阵的前若干列向量保持不变,对剩余部分列向量组成的矩阵采用PCA技术进行降维来合成原型FIR滤波器.所提出改进型PCA-EIR技术的算法执行复杂度与传统PCA-EIR技术相当,且在滤波器频率响应指标基本相等的前提下,改进型PCA-EIR技术节省3.5％-17.5％乘法器和25.6％-51.6％加法器,从而进一步降低了FIR滤波器的硬件执行复杂度.     

一种基于频分复用信号的宽带数字收发设计

介绍了一种基于频分复用信号的宽带数字收发设计。根据软件无线电基本理论给出了系统的硬件具体实现和软件处理流程,描述了基于FPGA平台的并行FIR滤波器和并行CIC滤波器的高效实现方法。给出了宽带数字收发系统的仿真和测试结果。该系统硬件结构简洁,逻辑资源开销小,通用性和扩展性强。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.