Sm2O3掺杂BaTiO3陶瓷的结构与电性能研究

采用溶胶-凝胶法制备了掺杂不同浓度Sm2O3(分别为0.001,0.002,0.003,0.005,0.007mol)的BaTiO3陶瓷,并对其结构与电性能进行了研究.结果表明:Sm2O3掺杂BaTiO3陶瓷的晶型在室温下为四方相,而且随着Sm2O3掺杂浓度的增加,BaTiO3陶瓷的晶粒尺寸变小,说明Sm2O3掺杂对BaTiO3陶瓷晶粒的生长有一定的抑制作用;Sm2O3掺杂BaTiO3陶瓷的电阻率比纯BaTiO3陶瓷明显下降,当添加量为0.001mol时,电阻率最小,.从4.3×109Ω·m下降为6.536×103Ω·m;Sm2O3掺杂BaTiO3陶瓷的晶粒电阻随着温度的变化,呈现NTC效应,而晶界电阻随着温度的变化,呈现PTC效应,且晶界电阻远远大于晶粒电阻,说明该材料的PTC效应是由晶界效应引起的.     

Zn_2SnO_4掺杂对BaTiO_3陶瓷介电性能的影响

用固相反应法分别合成了Zn2SnO4、BaTiO3粉体,用传统陶瓷制备工艺制备了Zn2SnO4掺杂的BaTiO3陶瓷(ZS-BT),研究了掺杂量变化对BaTiO3陶瓷介电性能的影响。研究发现,适量的Zn2SnO4掺杂可促进BaTiO3陶瓷的烧结,降低BaTiO3陶瓷的介电损耗;随着掺杂量的增加,BaTiO3陶瓷的介电居里峰逐渐降低弥散,并向低温方向移动;在测量频率范围内(102~109 Hz),Zn2SnO4掺杂使得介温曲线在40~125℃温度区间内变得平坦,当Zn2SnO4的掺杂比例为2%时,介电常数变化率低于8%。这些结果表明,ZS-BT陶瓷对研究温度稳定性良好的陶瓷电容器有着重要的意义。     

BaTiO3-Nb2O5-Ni2O3三元系统的介电性能研究

对三元系统BaTiO3-Nb2O5-Ni2O3的微结构和介电性能进行了研究．XRD分析表明Nb2O5／Ni2O3协同掺杂的BaTiO3陶瓷为赝立方相结构；在掺杂1．0mol％Ni的BaTiO3中，Nb的固溶度〈4．0mol％．SEM观察表明，随Nb掺杂量的增加，BaTiO3陶瓷的晶粒尺寸先增大后减小．BaTiO3陶瓷的室温介电常数、介质损耗，以及在低温端和高温端的电容变化率都随Nb含量的增加而先增大后减小．DSC测量表明，Nb掺杂使BaTiO3陶瓷的居里温度向高温方向移动．该系统瓷料介电性质的变化与材料的晶粒尺寸以及掺杂剂导致的相变温度的移动密切相关．本实验在BaTiO3-Nb2O5-Ni2O3系统中开发出了新型的X8R材料，这种材料很有希望用于制备大容量X8R多层陶瓷电容器．     

中温烧结耐高温陶瓷电容的制备及性能研究

在BaTiO3(BT)BNT-Nb2O5-Zn系统中改变Nb、Zn掺杂量,对BTBNT-Nb-Zn进行介电性能研究,以期获得中烧耐高温陶瓷电容.研究发现,Nb2 O5、ZnO对BTBNT-Nb2O5-ZnO陶瓷介电性能以及电容量温度变化曲线的影响主要体现在居里温度和居里峰的变化.它们的改性机理可用掺杂后晶粒壳与晶粒芯体积分数的变化来解释.对比不同掺杂后钛酸钡陶瓷的SEM照片可以得出:陶瓷的室温介电常数与掺杂后钛酸钡陶瓷的晶粒生长情况密切相关.     

La2O3掺杂（Na0．5 Bi0．5）0．94 Ba0.06 TiO3无铅压电陶瓷的介电弛豫研究

采用固相合成法制备了La2O3掺杂(Na0.5Bi0.5)0.94Ba0.06TiO3无铅压电陶瓷.研究了La2O3掺杂对(Na1/2Bi1/2)TiO3陶瓷晶体结构、介电性能与介电弛豫行为的影响.XRD分析表明,在所研究的组成范围内陶瓷材料均能够形成纯钙钛矿固溶体.材料的介电常数-温度曲线显示陶瓷具有两个介电反常峰Tf和Tm.修正的居里-维斯公式较好的描述了陶瓷弥散相变特征,弥散指数随La2O3掺杂量的增加而增加.掺杂量较低的陶瓷仅在低温介电反常峰Tf附近表现出明显的频率依赖性,随掺杂量的增加,陶瓷材料在室温和低温介电反常峰Tf之间都表现出明显的频率依赖性.并根据宏畴-微畴转变理论探讨了该体系陶瓷介电弛豫特性的机理.     

Y2O3和ZnO共掺杂对BaTiO3陶瓷的微观结构和介电性能的影响

研究了Y2O3和ZnO共掺杂对BaTiO3陶瓷的微观结构和介电性能的影响.XRD分析表明,Y2O2和ZnO促使BaTiO3的晶体结构由四方相转变为赝立方相;在此系统中Y2O3的固溶度低于1.5mol%,而ZnO的固溶度约3.0mol%.SEM显示Y2O3比ZnO更能有效地改善微观结构,其显著的晶粒抑制作用归因于分散于晶界的第二相Y2Ti2O7对晶粒生长的钉扎作用.适量Y2O3和ZnO的协同作用有助于形成壳-芯结构,并显著改善BaTiO3陶瓷的介电温度稳定性.在BaTiO3-Y2O3-ZnO新体系中获得符合X7R的高性能抗还原介质.     

V2O5对 BaTiO3-Y2O3-MgO陶瓷性能的影响

研究了V2O5掺杂BaTiO3-Y2O3-MgO系陶瓷的显微结构和介电性能．SEM显示V2O5会促进该体系晶粒生长，降低陶瓷致密度．XRD显示V掺杂样品均为单一赝立方相，其固溶度〉1．0m01％．研究表明，V离子能有效抑制掺杂离子Y、Mg向BaTiO3晶粒内扩散，改变掺杂离子在晶粒中分布，从而形成薄壳层的壳芯晶粒，因此V能提高居里峰的强度并改善电容温度稳定性．多价V离子在还原气氛中以＋3、＋4为主，能增强瓷料的抗还原性，提高绝缘电阻率（10^13Ω·cm）、降低介电损耗（0．63％）．该体系掺杂0．1mol％V时，介电常数达到2600，满足X8R标准．     

BiNbO4掺杂对BaTiO3基陶瓷的改性效应研究

对三元系统BaTiO3(BT)-Bi0.5Na0.5TiO3(BNT)-BiNbO4的微结构和介电性能进行了研究.1%(摩尔分数) BNT掺杂使BT的居里温度由127℃大幅提高到140℃.BiNbO4掺杂显著降低了高温端的电容温度变化率,相反低温端的电容温度变化率升高.掺杂3%～4%(摩尔分数)BiNbO4的BT陶瓷满足X8R特性.烧结温度过高时,居里峰明显被抑制,居里温度向低温移动,而低温介电峰向高温移动.SEM结果表明,1%(摩尔分数)BiNbO4掺杂时,陶瓷晶粒细小且尺寸均匀.BiNbO4含量增大,陶瓷内部出现异常生长的第二相晶粒,且第二相比例随BiNbO4含量增加而增大.XRD分析表明,基质晶粒为BaTiO3,第二相包括Ba2TiO4、NaBiTi2O6及BaTiNb4O13.     

BaNb2O6掺杂Na1/2Bi1/2TiO3无铅压电陶瓷的介电弛豫

采用传统陶瓷制备方法,制备了无铅新压电陶瓷材料Na1/2Bi1/2TiO3-xBaNb2O6.研究了BaNb2O6掺杂对(Na1/2Bi1/2)TiO3陶瓷晶体结构、介电性能与介电弛豫行为的影响.XRD分析表明,在所研究的组成范围内陶瓷材料均能够形成纯钙钛矿固溶体.材料的介电常数-温度曲线显示陶瓷具有两个介电反常峰Tf和Tm,修正的居里一外斯公式较好的描述了陶瓷弥散相变特征,弥散指数随BaNb2O6掺杂量的增加而增加.该体系陶瓷表现出与典型弛豫铁电体明显不同的弛豫行为,低掺杂量的陶瓷仅在低温介电反常峰Tf附近表现出明显的频率依赖性,而高掺杂的陶瓷材料在室温和Tf之间都表现出明显的频率依赖性.并根据宏畴一微畴转变理论探讨了该体系陶瓷产生介电弛豫的机理.     

La改性 BaTiO3陶瓷的结构与电性能

采用气相扩渗和液相掺杂两种方法制备了 La改性的 BaTiO3陶瓷,并对其组成、结构、形貌以 及电性能的变化进行了研究. La的液相掺杂可使纯 BaTiO3陶瓷的电阻率从 4.0× 1012Ω· m下降 为 3.0× 106Ω· m; 而 La的气相扩渗使其电阻率下降更为明显, 变为 8.2× 104Ω· m. La掺杂 BaTiO3陶瓷的晶粒电阻随温度的变化,呈现出明显的 NTC效应,而晶界电阻则呈现 PTC效应. La 扩渗 BaTiO3陶瓷的晶粒电阻随温度的变化,呈现出明显的 PTC效应;晶界电阻随着温度的升高急 剧连续降低 ,样品总电阻的 PTC效应已不存在. XRD分析表明, La掺杂的 BaTiO3陶瓷并没有形成 新相,而扩渗的 La元素已经与陶瓷组元发生了复杂反应,生成了 La2C2O2 、 Ba5La4Ti8O27一些新的 化合物,从而导致了导电性的显著变化. SEM分析表明, La扩渗的 BaTiO3陶瓷,因形成新相,从而 使形核数量增多,形成了均匀、细小、弥散的形貌特征.     

Thermal characterization of KClO3 KBrO3 and KIO3

The specific heats, thermal decompositions and thermal properties of the phase transitions in KClO₃ KBrO₃ and KIO₃ crystals were measured. The thermal stability of the compounds decreased in the order KIO₃ > KCIO₃ > KBrO₃. Over the temperature range 250–600 K, no phase transitions were detected for KBrO₃: one at 545 K for KClO₃ and two for KIO₃ at 345 and 487 K.     

Flux growth of single magnetic sublattice antiferromagnetic garnets Ca3 Fe2 Ge3 O12 and Ca3 Mn2 Ge3 O12

Magnetic single crystals garnets Ca₃ X₂ Ge₃ O₁₂ with X = Mn³⁺ or Fe³⁺ containing Ca²⁺ and Ge⁴⁺ are of great interest due to the rise of an antifer-romagnetic order in one definite octahedral site. The optimal conditions for obtaining single magnetic-sublattice garnets of large size (1 cm in diameter) have been analyzed. Two groups of solvents have been tested: Bi₂ O₃ or PbO based flux. The best results were obtained with PbO flux and starting composition : % Moles 44 PbO 1b 35 GeO₂ 1b 15 CaO 1b 6 X₂ O₃.     

Electrical properties of sintered EuZrO3  EuNbO3 and EuNbO3

Electrical resistivity of two-phase products [yEuZrO₃ + (1 ? y) EuNbO₃] increased continuously with y, and a transition from a metallic to semiconducting characteristic occured at y = 0.14. The resistivity varied almost linearly with temperaure in the range y = 0 to y = 0.24, and thermal coefficients of resistivity at 300 K for the products decreased from +5.9 × 10^?4 K^?1 to ?7.4 × 10^?4 K^?1 according to the value of y. At y = 0.14, the thermal coefficient was almost zero. Thermal coefficients of electrical resistivity for the niobates with various oxygen contents were all positive in the range $\text{2.55 <}\text{O}\text{Nb}\text{< 3.24}$ and exhibited a sharp minimum at $\text{O}\text{Nb}\text{= 2.92}$. In all these niobates, Eu_xNbO₃ was a major phase and Eu₃NbO₆ or EuNbO₂ was detected as a second phase in the range $\text{O}\text{Nb}\text{> 3}$ or $\text{O}\text{Nb}\text{< 3}$ respectively. Peaks in the resistivity curves were correlated with a magnetic ordering temperature for samples with an overall ratio $\text{O}\text{Nb}\text{> 3}$.     

Hydrothermal Crystallization in the Systems La2(CO3)3 ? 6H2O-CaCO3(BaCO3)-R-H2O (R = Na2CO3, K2CO3, NaHCO3, KHCO3, NaCl, NH4Cl, CO(NH2)2)

Crystallization in the systems La₂(CO₃)₃ ⋅ 6H₂O-CaCO₃(BaCO₃)-R-H₂O (R = Na₂CO₃, K₂CO₃, NaHCO₃, KHCO₃, NaCl, NH₄Cl, CO(NH₂)₂) was studied under hydrothermal conditions (400–450°C). The solid reaction products were found to contain LaOHCO₃ and NaLa(CO₃)₂. Detailed thermal decomposition schemes were proposed for these phases, and their lattice parameters were refined. __________ Translated from Neorganicheskie Materialy, Vol. 41, No. 11, 2005, pp. 1366–1372. Original Russian Text Copyright ? 2005 by Nikol'skaya, Dem'yanets.     

Elastic modulus and hardness of CaTiO3, CaCu3Ti4O12 and CaTiO3/CaCu3Ti4O12 mixture

Three ceramic systems, CaTiO₃ (CTO), CaCu₃Ti₄O₁₂ (CCTO) and intermediate nonstoichiometric CaTiO₃/CaCu₃Ti₄O₁₂ mixtures (CTO.CCTO), were investigated and characterized. The ceramics were sintered at 1100 °C for 180 min. The surface morphology and structures were investigated by XRD and SEM. Elastic modulus and hardness of the surfaces were studied by instrumented indentation. It was observed that CCTO presented the higher mechanical properties (E = 256 GPa, hardness = 10.6 GPa), while CTO/CCTO mixture showed intermediate properties between CTO and CCTO.     

Influence of BaZrO3, MnCO3 additives on dielectric properties and microstructure of Ba(Zn1/3Nb2/3)O3 ceramics and Ba(Zn1/3Nb2/3)O3-Sr(Zn1/3Nb2/3)O3 solid solutions

The effect of BaZrO₃, MnCO₃ additives on the dielectric properties, sintering temperature and microstructure of Ba(Zn_1/3Nb_2/3)O₃ (BZN) and Ba(Zn_1/3Nb_2/3)O₃-Sr(Zn_1/3Nb_2/3)O₃ (BSZN) ceramics was studied in this paper. It indicates that both BaZrO₃ and MnCO₃ can lower the sintering temperature of the ceramics and accelerate the crystallization of BZN and BSZN. The dielectric constant ɛ _r increases after MnCO₃ added, but decreases when BaZrO₃ added alone. The existence of MnCO₃ can modulate the temperature coefficient of capacitance τ _c toward positive, while BaZrO₃, can make c more negative. MnCO₃ and BaZrO₃ can restrain the appearance of the second phase; while BaZrO₃, can prevent the appearance of the superstructure. In the BSZN system, when 1 mass % MnCO₃ added, sintering temperature(t _s ) is lowered to 1240°C. In this study, the best sample that has the excellent properties is sample 5 with dielectric properties of ɛ _r = 43.6, τ _c = −8 × 10⁻⁶ °C⁻¹ and tan δ = 0.6 × 10⁻⁴ (1 MHz). The sintering temperature of BZN and BSZN system can be lowered to less than 1300°C.     

Deposition process of Si-B-C ceramics from CH3SiCl3/BCl3/H2 precursor

Si-B-C coatings have been prepared by chemical vapour deposition (CVD) from CH₃SiCl₃/BCl₃/H₂ precursor mixtures at low temperature (800-1050 °C) and reduced pressures (2, 5, 12 kPa). The kinetics (including apparent activation energy and reaction orders) related to the deposition process were determined within the regime controlled by chemical reactions. A wide range of coatings, prepared in various CVD conditions, were characterized in terms of morphology (scanning electron microscopy), structure (transmission electron microscopy, Raman spectroscopy) and elemental composition (Auger electron spectroscopy). On the basis of an in-situ gas phase analysis by Fourier transform infrared spectroscopy and in agreement with a previous study on the B-C system, the HBCl₂ species was identified as an effective precursor of the boron element. H_xSiCl_(4−x), SiCl₄ and CH₄, derived from CH₃SiCl₃, were also shown to be involved in the homogeneous and the heterogeneous reactions generating silicon and carbon in the coating. A correlation between the various experimental approaches has supported a discussion on the chemical steps involved in the deposition process.     

Dielectric properties of Pb3 (PO4)2 | Pb3 (AsO4)2

The dielectric constants of Pb₃ (PO₄)₂ | Pb₃ (AsO₄)₂ at room temperature are intrinsic and fulfill the Lyddane - Teller - Sachs relation. At higher temperatures the specific conductivity increases with an activation energy of 0.56 eV leading to Maxwell - Wagner polarization effects thereby increasing the effective dielectric constant. Corresponding peaks in ∈' (T) are extrinsic and not attributed to structural phase transformations.     

Electrical properties of Pb(Mg1/3Nb2/3)O3-PbTiO3 ceramics modified with WO3

Ferroelectrics 0.67Pb (Mg_1/3Nb_2/3)O₃-0.33PbTiO₃ (PMN-PT) + x mol% WO₃ (x=0.1, 0.5, 1, 2) were prepared by columbite precursor method. Electrical properties of WO₃-modified ferroelectrics were investigated. X-ray diffraction (XRD) was used to identify crystal structure, and pyrochlore phase were observed in 0.67Pb (Mg_1/3Nb_2/3)O₃-0.33PbTiO₃+2 mol% WO₃. Dielectric peak temperature decreased with WO₃ doping, indicating that W⁶⁺ incorporated into PMN-PT lattice. Lattice constant, pyrochlore phase and grain size contribute to the variation of K_max. Both piezoelectric constant (d₃₃) and electromechanical coupling factors (k_p) were enhanced by doping 0.1 mol% WO₃, which results from the introduction of “soft” characteristics into PMN-PT, while further WO₃ addition was detrimental. We consider that the two factors, introduction of “soft” characteristics and the formation of pyrochlore phase, appear to act together to cause the variation of piezoelectric properties of 0.67PMN-0.33PT ceramics doping with WO₃.     

High pressure synthesis of Gd3InO6, Tb3InO6 and Lu3InO6

Three new compounds, X₃InO₆ (X = Gd, Tb, Lu) were prepared at 1–4 GPa, ～1050°C. They are monoclinic, space group $\text{P}\text{2}{}_1\text{n}$ with $\text{a}\text{? 8.9}\text{A}\text{?}$, $\text{b}\text{? 9.8}\text{A}\text{?}$, $\text{c}\text{? 5.9}\text{A}\text{?}$, β ～ 95° and Z = 4.