用于连续激光器的磷酸钛氧钾晶体的制备和性

采用掺杂生长了一系列用于大功率LD泵浦连续激光器倍频的磷酸钛氧钾(KTiOPO4,KTP),如:Nb:KTP、Na:KTP、Ce:KTP及Rb:KTP、Cs:KTP等,虽然其中一些具有比普通KTP晶体高的效率和抗光损伤阈值,并在4%Nb:KTP中实现了NCPM,但是在大部分掺杂晶体中生长条纹、包裹体等均较严重,影响了晶体的均匀性,不适于大功率连续激光器应用.为提高KTP晶体均匀性和抗光损伤阈值,采用特制原料和改进工艺生长了优质KTP晶体,可用于大功率LD泵浦的Nd:YVO4连续激光器倍频,最大的连续绿光输出功率达到5W.     

Nd:Zn:LiNbO_3单晶的生长及其抗光伤性能与光谱的研究

选择掺Zn作为Nd:LiNbO_3晶体的抗光伤手段,成功地生长了高掺Nd(原料中掺入1mol％的Nd_2O_3)的Nd:Zn:LiNbO_3单晶,根据其各种光学性能的测试结果,断定它是可用于半导体激光器泵浦的自倍频激光材升。测试晶体的双折射梯度及不同光斑直径下的消光比证明,晶体具有良好的光学均匀性。测试晶体中OH~-离子伸展振荡的红外吸收峰的位置发现,在Nd:LiNbO_3晶体中,Zn含量的抗光伤阈值为2.58wt％(以ZnO计)。对Zn含量超过抗光伤阈值的晶体测定了Ar~+离子激光(514.5nm)长时间辐照前后双折射的变化,为10~(-5)量级,证明掺Zn具有显著的抗光伤效应。晶体在可见光及近红外的吸收峰即为Nd~(3+)离子的5个本征吸收峰,较单掺Nd的LiNbO_3晶体,吸收峰的位置皆稍红移,其中基态~4I_(9/2)至~4F_(5/2)的跃迁吸收峰位于808nm,使得有可能在将该材料用于激光运转时采用半导体激光器为泵浦光源。晶体室温下的荧光谱与单掺Nd的晶体相近,最强峰为~4F_(3/2)向~4I_(11/2)的跃迁,谱线波长1.085μm(π偏振)与1.093μm(σ偏振)。能实现自倍频的为σ偏振的激光振荡,自倍频后输出波长0.546μm。用于倍频1.06μm的Nd:YAG激光,该晶体的相匹配温度为70～80℃,相匹配角80°左右。在室温下,正入射时,即非严格相匹配的条件下,晶体有10％左右的倍频转换效率     

掺钕氟磷酸锶单晶研究

为探索和评价新型激光晶体掺钛氟磷酸银Nd：Sr5（PO4）3F（Nd：SFAP）在制作激光器方面的应用，对其生长、结构、光谱与激光特性及一些物理性能进行了系统研究．采用Czochralski法成功地生长出单晶；用先进的设备对所生长之晶体进行了有关测量，并进行了以激光二极管为泵浦源、该晶体为工作物质的激光实验．结果表明：晶体生长中Nd的有效分凝系数为0.52；理想的泵浦光应是806um的π偏振光，荧光寿命为175μs；泵浦阈值15mW，斜效率为31．8％研究结论为：Nd：SFAP晶体是制作小型LD泵浦激光器的理想材料，但用它制作较大功率激光器是不合适的     

新型电光调Q腔内倍频绿光激光器

本文报道了一种新型的LD泵浦Nd:YVO4-KTP电光调Q绿光激光器,用单块KTP晶体同时作为电光调Q开关和Ⅱ类相位匹配的倍频晶体,减少了腔内损耗,提高了效率,得到了脉宽为12ns的绿光脉冲序列。激光器采用纵向同轴泵浦方式、独特的整体控温技术和小焦距非球面聚焦透镜,并把全部元件固化为一个整体,进一步提高了器件的效率、激光的输出功率和光束方向的稳定性。     

LD抽运Nd:GdVO41.34μm激光器及其倍频特性

采用直线腔激光二极管（LD）抽运Nd：GdVO4晶体1,34μm激光器。在泵浦功率为8W的情况下,获得连续波输出为1．91W。激光器光-光转换效率为23．9％,斜效率为29．1％。采用声光调Q,重复频率为10kHz时,得到最短脉宽、最大单脉冲能量分别为78ns和20．1μJ,最大平均输出功率为253mW。采用Nd：GdVμ4晶体KTP腔内倍频激光器,在泵浦功率为6.7W时,得到单向连续红光输出为50．7mW,光-光转换效率为1．5％。     

LD泵浦的高效率YVO4/KTP单频绿激光器研究

LD泵浦的高效率YVO4/KTP单频绿激光器研究     

LD抽运355nm连续紫外激光器

报道了一台LD端面抽运Nd:YVO4晶体的内腔三次谐波转换的全固态连续紫外激光器.在谐振腔内,1064 nm的基频波经Ⅱ类相位匹配KTP晶体进行二倍频产生532 nm波长激光,二者再经Ⅰ类相位匹配LBO晶体进行和频获得355 nm紫外激光输出.在Nd:YVO4晶体的外端镀1064 nm/532 nm双波长高反膜作为输入镜,其与输出镜构成平-凹腔结构,并考虑到Nd:YVO4晶体所产生的热透镜效应,对腔长进行了详细的分析计算.当LD抽运功率为3W时,获得4.2 mW连续运转的355nm紫外激光.     

大功率半导体激光光束整形技术及其在泵浦方面的应用

在分析大功率半导体激光器的光束输出特性的基础上,针对Ｎｄ：ＹＶＯ４／ＫＴＰ腔内倍频激光器的泵浦光源要求,研究了大功率半导体激光器光束输出的多种整形方法,同时比较了不同泵浦光束形状对Ｎｄ：ＹＶＯ４／ＫＴＰ腔内倍频激光器输出效率的影响。     

高效率低阈值激光材料Nd:S-FAP晶体

报道了一新型高效率,低阈值激光晶体Ｎｂ：Ｓ－ＦＡＰ的激光特性,利用染料激光和ＬＤ作为泵浦源,分别研究了Ｎｄ：Ｓ－ＦＡＰ晶体激光器的脉冲和连续输出的激光特性,染料激光泵浦Ｎｄ：Ｓ－ＦＡＰ激光器的泵浦阈值为２．５ｍＪ,     

摘要

940nm列阵窗口半导体激光器 李辉,李军,曲轶,薄报学,张兴德 (长春光学精密机械学院高功率半导体激光国家重点实验室,长春 13 0022) Tel:0431-5303282, Fax:0431-5384517, E-mail:hpld@mail.jl.cn 摘要：设计了梯度折射率分别限制单量子阱 (GRIN\|SCH\|SQW) 激光器结构,并利用分子束外延(MBE)方法生长出该结构材料,采用宽接触结构制作出cm条列阵半导体激光器。利用量子阱互混原理,采用高温退火技术制作列阵激光器的无吸收窗口结构。列阵半导体激光器的输出功率达到80W(室温,准连续,重复频率500Hz, 脉冲宽度100μs), 峰值波长为93 9(941nm。 LD泵浦的高效率YVO4/KTP单频绿激光器研究 郑权,檀慧明,赵岭 （中国科学院长春光学精密机械与物理研究所,长春 130022) Tel: 0431-5696601 Fax:0431-5696653 E-mail:zhengquanok@263.net 摘要：本文将短程吸收与双折射滤光片技术有机地结合起来,实现了简单直腔YVO4／KTP组合结构的高效率单频绿激光器稳定输出。实验结果测得泵光阈值约为50mW。当注入泵浦功率为 400mW时,得到26mW的稳定单频绿光输出,光光转换效率达到6.5%。     

锥头籽晶对DKDP晶体生长和损伤阈值的影响

籽晶是影响DKDP晶体生长和光损伤阈值的一个重要因素。采用传统降温法,分别利用Z片和锥头作为籽晶,从氘化程度为85%的溶液生长了DKDP晶体,并选取部分样品进行3倍频光损伤阈值测试。实验证明,DKDP晶体可以在不同籽晶下基本实现稳定生长,锥头籽晶所得DKDP晶体对晶体损伤阈值提高有积极作用且能有效缩短生长周期。     

Influence of NH4Cl on the < 1 0 0> directed growth and properties of ADP crystal

Good quality, pure and ammonium chloride added < 1 0 0> directed ADP single crystals with different sizes were grown by Sankaranarayanan-Ramasamy method with the vision to improve the properties of the crystal. The grown crystals have cylindrical morphology and the crystals were subjected to UV-Vis., DTA, microhardness, laser damage threshold, dielectric, piezoelectric and SHG studies. The addition of ammonium chloride improves the quality and yields crystals with transparency more than 80% in minimum duration of growth. Higher laser damage threshold and mechanical stability were observed in ammonium chloride added ADP crystals. Low dielectric loss shows that the grown crystal contains minimum defects. Good piezoelectric behaviour was observed for the grown crystals. The SHG efficiency of the crystals was obtained using Nd-YAG laser, which is approximately 3 times that of pure ADP and shows the suitability of the ingot for nonlinear optical applications.     

不同籽晶DKDP晶体生长和光学性能研究

籽晶是影响DKDP晶体生长和光学性能的一个重要因素.通过传统降温法,分别利用Z片和[101]晶片作为籽晶,从氘化程度为85%的溶液中生长DKDP晶体并对加工样品进行了相关测试.研究了不同籽晶对DKDP晶体的生长和光学性能的影响.实验表明,[101]晶片籽晶所得DKDP晶体能有效缩短生长周期,晶体损伤阈值提高明显,但光学均匀性和透过性能有所下降.     

Nd3+:Y0.5Gd0.5VO4晶体生长和基本特性

Nd^3 :Y0.5Gd0.5VO4晶体作为一种新的激光材料，可以用中频感应加热提拉法生长。X射线粉末衍射分析表明它的结构与Nd^3 :YVO4晶体结构相同，它的晶格常数介于YVO4和NdVO4晶格常数之间。用ICP光谱法测定晶体中Nd^3 含量为0．8at％，分凝系数为0．8，与Nd^3 :GdVO4晶体中Nd^3 的分凝系数0．78相当；用称重法测定其密度为5．00g／cm^3；用稳态纵向热流法测出其室温热导率为12．5W／mK。实验表明Nd^3 :Y0.5Gd0.5VO4晶体有希望作为高功率ID泵浦激光晶体材料。     

Development of compact CW-IR laser deposition system for high-throughput growth of organic single crystals

We developed a compact continuous-wave infrared (CW-IR) laser deposition system for the high-throughput growth of organic single crystals. In this system, two CW-IR lasers are used for the sample heating and thermal evaporation of materials. The CW-IR laser heating is simple and allows good control of the deposition rate and growth temperature, in response to the on/off laser switching. Six samples can be loaded simultaneously in a chamber, which allows one-by-one sequential deposition for high-throughput experiments, without breaking the vacuum. Using this setup, we studied the effect of ionic liquids on the growth of C₆₀ crystals in vacuum.     

Development of compact CW-IR laser deposition system for high-throughput growth of organic single crystals

Abstract

We developed a compact continuous-wave infrared (CW-IR) laser deposition system for the high-throughput growth of organic single crystals. In this system, two CW-IR lasers are used for the sample heating and thermal evaporation of materials. The CW-IR laser heating is simple and allows good control of the deposition rate and growth temperature, in response to the on/off laser switching. Six samples can be loaded simultaneously in a chamber, which allows one-by-one sequential deposition for high-throughput experiments, without breaking the vacuum. Using this setup, we studied the effect of ionic liquids on the growth of C₆₀ crystals in vacuum.     

DCTA对KDP晶体的快速生长与光学性能的影响

环己二胺四乙酸(DCTA)作为一种新型添加剂被加入到KDP晶体生长溶液中。采用“点籽晶”快速生长技术, 在掺杂100×10^-6 DCTA的饱和溶液中, 生长了KDP晶体, 生长速度达20 mm/d。研究了这种新型添加剂DCTA对快速生长的KDP晶体的生长习性和光学质量的影响, 并与常用添加剂EDTA的影响效果进行了对比。研究发现, 在KDP晶体生长溶液中添加100×10^-6 DCTA使生长溶液的亚稳区宽度提高了约10℃, 晶体(100)面的生长速度提高了3~10倍; 生长出的晶体在紫外波段的透过率上升了2~8倍, 晶体内部的光散射大大减轻, 激光损伤阈值也有所提高。添加剂DCTA对KDP晶体生长及性能的改善作用比同等浓度的EDTA更加显著。     

Laser alexandrite crystals grown by horizontal oriented crystallization technique

Comparative studies were performed for alexandrite crystals, Al₂BeO₄:Cr³⁺, employed in solid state lasers and grown by the horizontal oriented crystallization (HOC) technique and alexandrite crystals grown by the Czochralski (Cz) method. It was shown that the structural quality and possibilities of generation of stimulated emission HOC-crystals are similar to Cz-crystals, whereas their damage threshold is about three times higher. The obtained results and considerably lower cost price of HOC-alexandrite crystals prove their advantageous application in powerful laser systems, which require large laser rods with a higher resistance to laser beam. It is emphasized that application of HOC technique is promising for growth of laser crystals of other high-temperature oxide compounds.     

Cr3+掺杂对快速生长KDP晶体的生长习性和光学性能的影响

采用快速法生长了掺杂不同Cr3+浓度的KDP晶体,测试了KDP晶体(100)面在不同Cr3+掺杂浓度下的生长速度及死区,表征了Cr3+掺杂的KDP晶体的Cr3+元素分布、透过光谱、散射颗粒分布和光损伤阈值.实验表明Cr3+易吸附在晶体(100)面,从而增大了(100)生长死区,并降低了(100)面生长速度.Cr3+使快...     

Investigation of damage mechanisms of KTiOPO4 crystals by use of a continuous-wave argon laser

We have developed a simple method that uses cw irradiation from an argon laser to measure the damage threshold of KTP crystals. Our experimental results show that there are two types of damage in KTP crystal, depending on the polarization of the incident laser beam. One type of optical damage is the appearance of gray tracks, including both dark tracks and orange dots, when the pump polarization is perpendicular to the z axis. The other type is invisible damage when the polarization is parallel to the z axis. In addition, we have also observed weak photorefractive two-wave mixing in KTP crystals in each of these polarization states. After a systematic analysis we have concluded that the first type of damage is due to the formation and absorption of Ti(3+) and Fe(3+) centers and the second is due to the drift of K(+) ions. The weak photorefractive effect is the result of screening of the electric field by the drifted K(+) ions.