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1.
《Vacuum》1999,52(1-2):133-139
Polycrystalline diamond films are grown from low pressure gas mixtures, the deposition techniques are Microwave Plasma Chemical Vapour Deposition and Hot filament Chemical Vapour Deposition, in both techniques the deposition temperature is close to 900°C. The film growth process is strongly dominated by the initial nucleation stage, after this stage, the film grows at a rate of one micron per hour. The carbon atoms in the diamond film are fully fourfold (sp3) co-ordinated and the film properties are close to those of single crystalline diamond: extremely hard, resistant and transparent from UV to IR.Diamond-like carbon (DLC) films are amorphous and contain a variable amount of hydrogen in their structure, the carbon atoms are partially threefold (sp2) co-ordinated. Films are obtained at temperatures below 250°C and deposited on almost any substrate. Film composition, structure and functional properties are strongly dependent on the level of ionic bombardment of the film during growth. DLC films are very hard, have a low friction coefficient and good wear resistance, are chemically inert and are transparent in the IR.  相似文献   

2.
Field emission from diamond and diamond-like carbon thin films deposited on silicon substrates has been studied. The diamond films were synthesized using hot filament chemical vapor deposition technique. The diamond-like carbon films were deposited using the radio frequency chemical vapor deposition method. Field emission studies were carried out using a sphere-to-plane electrode configuration. The results of field emission were analyzed using the Fowler-Nordheim model. It was found that the diamond nucleation density affected the field emission properties. The films were characterized using standard scanning electron microscopy, Raman spectroscopy, and electron spin resonance techniques. Raman spectra of both diamond and diamond-like films exhibit spectral features characteristic of these structures. Raman spectrum for diamond films exhibit a well-defined peak at 1333cm?1. Asymmetric broad peak formed in diamond-like carbon films consists of D-band and G-band around 1550 cm?1 showing the existence of both diamond (sp3 phase) and graphite (sp2 phase) in diamond-like carbon films.  相似文献   

3.
Siqing He 《Thin solid films》2009,517(19):5625-100
Carbon films containing diamond particles were deposited onto a Si (100) substrate by electrolysis of methanol under a direct current potential of 1200 V, with a current density of about 52 mA/cm2, at atmospheric pressure and in the temperature range of 50-55 °C. The surface morphology, microstructure and crystalline structure of the deposited films were characterized by scanning electron microscopy (SEM), Fourier transformation infrared (FTIR) spectroscopy, Raman spectroscopy and transmission electron microscopy (TEM) respectively. The SEM images show that the films are formed by particle clusters and a surrounding glassy phase. The Raman spectra of the films indicate that the particle clusters are composed of diamond and that the glassy phase is composed of amorphous carbon. The FTIR measurements suggest the existence of hydrogen which is mainly bonded to the sp3 carbon in the films. The transmission electron diffraction patterns further indicate that the particles in the films consist of single-crystalline diamond. Both TEM and Raman measurements have confirmed unambiguously the formation of diamond crystals in the deposit, although the particles are not uniformly distributed on the entire surface.  相似文献   

4.
Diamond-like carbon (DLC) films were deposited by a cathodic arc plasma evaporation (CAPD) process, using a mechanical shield filter combined with a magnetic filter with enhanced arc structure at substrate-bias voltage ranging from − 50 to − 300 V. The film characteristics were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and high-resolution transmission electron microscopy (HRTEM). The mechanical properties were investigated by using a nanoindentation tester, scratch test and ball on disc wear test. The Raman spectra of the films showed that the wavenumber ranging from 900 to 1800 cm− 1 could be deconvoluted into 1140 cm− 1, D band and G band. The bias caused a significant effect on the sp3 content which was increased with the decreasing of ID/IG ratio. The XPS spectra data of the films which were etched by H+ plasma indicated the sp3 content are higher than those of the as-deposited DLC films. This implied that there is a sp2-rich layer present on the surface of the as-deposited DLC films. The nanoindentation hardness increased as the maximum load increased. A 380 nm thick and well adhered DLC film was successfully deposited on WC-Co substrate above a Ti interlayer. The adhesion critical load of the DLC films was about 33 N. The results of the wear tests demonstrated that the friction coefficient of the DLC films was between 0.12 and 0.2.  相似文献   

5.
Nanocrystalline gold incorporated diamond-like carbon (nano-Au/DLC) films were deposited by capacitively coupled plasma (CCP) r.f. chemical vapour deposition (CVD) technique. Gold content in the DLC matrix was controlled by the amount of argon in the argon + methane mixture in the plasma. Field emission properties of these films were studied critically. Bonding environment (sp2/sp3 ratio) in these films was obtained from Raman measurements. Modification of the surface with the incorporation of gold nanocrystallites and associated modulation of sp2/sp3 ratio in the films culminated in improved field emission properties. Fowler-Nordheim model was used to ascertain the work function (?) which varied between 19 and 64 meV. The field factor (β) varied between 172 and 1050.  相似文献   

6.
Field emission from CVD diamond thin films deposited on silicon substrate has been studied. The diamond films were synthesized using hot filament chemical vapor deposition technique. Field emission studies of as-deposited and acid-treated films were carried out using ‘diode’ configuration in an all metal UHV chamber. Upon acid treatment, the field emission current is found to decrease by two orders of magnitude with increase in the turn-on voltage by 30%. This has been attributed to the removal of sp2 content present in the film due to acid etching. Raman spectra of both the as-deposited and acid-treated films exhibit identical spectral features, a well-defined peak at 1333 cm−1 and a broad hump around 1550 cm−1, signatures of diamond (sp3 phase) and graphite (sp2 phase), respectively. However upon acid treatment, the ratio (Id/Ig) is observed to decrease which supports the speculation of removal of sp2 content from the film. The surface roughness was studied using atomic force microscopy (AFM). The AFM images indicate increase in the number of protrusions with slight enhancement in overall surface roughness after acid etching. The degradation of field emission current despite an increase in film surface roughness upon acid treatment implies that the sp2 content plays significant role in field emission characteristics of CVD diamond films.  相似文献   

7.
The properties of diamond-like carbon (DLC) are strongly affected by the amount of carbon atoms bonded in sp2 and sp3 electronic hybridizations. Also the amount of incorporated hydrogen and oxygen plays an important role in the final properties of DLC films. Usually, the structure and chemical composition of thin DLC films can be changed by varying the deposition parameters. Therefore, the influence of PECVD process parameters on the properties of DLC films, grown on Si substrates, was investigated in this work.Thin DLC films were deposited in a CH4/H2 plasma by using Ar as a gas carrier. Different ratios of gas flows were used as a variable parameter of the PECVD process. The effect of cathodic ion bombardment was also investigated.The chemical composition of DLC specimens was studied by X-ray photoelectron spectroscopy (XPS). The ratio of carbon in sp2 and sp3 hybridizations was determined by analyzing the first derivative of Auger C KLL spectra. These results were also confirmed by the measurements of electrical resistivity. The changes of surface morphology and microadhesion were analyzed by Atomic Force Microscopy (AFM).  相似文献   

8.
The tunnelling properties in metal/diamond-like carbon (DLC)/semiconductor junctions and structural characteristics of thin DLC films produced using different electron beam conditions were studied. We show that under the same electron dose conditions, thicker DLC films were obtained using lower accelerating voltages (2 kV) than when using higher accelerating voltage (20 kV). However, under the settings used the thicker films showed worse insulating performance than the thinner films. We attribute this effect to the variation of tunnelling barrier height in DLC deposited using different accelerating voltages. DLC films with a tunnelling barrier height of up to 3.12 eV were obtained using a 20 kV electron-beam, while only 0.73 eV was achieved for 2 kV DLC films. The X-ray photoemission spectra of the C 1s core level in these films reveal components at 284.4 ± 0.1 eV and 285 ± 0.1 eV, which were identified as the sp2 and sp3 hybrid forms of carbon. The sp3/sp2 concentration ratio increased with increasing electron beam accelerating voltage. We show how this effect is responsible for the barrier height variation.  相似文献   

9.
In order to improve the friction and wear behaviours and rolling contact fatigue (RCF) life of bearing steel materials, Ti/TiN/DLC (diamond-like carbon) multilayer hard films were fabricated onto AISI52100 bearing steel surface by plasma immersion ion implantation and deposition (PIIID) technique. The micro-Raman spectroscopy analysis confirms that the surface film layer possess the characteristic of diamond-like carbon, and it is composed of a mixture of amorphous and crystalline phases, with a variable ratio of sp2/sp3 carbon bonds. Atomic force microscope (AFM) reveals that the multilayer films have extremely smooth area, excellent adhesion, high uniformity and efficiency of space filling over large areas. The nanohardness (H) and elastic modulus (E) measurement indicates that the H and E of DLC multilayer films is about 32 GPa and 410 GPa, increases by 190.9% and 86.4%. The friction and wear behaviours and RCF life of DLC multilayer films specimen have also been investigated by ball-on-disc and three-ball-rod fatigue testers. Results show that the friction coefficient against AISI52100 steel ball decreases from 0.92 to 0.25, the longest wear life increases nearly by 22 times. In addition, wear tracks of the PIIID samples as well as wear tracks of the sliding steel ball were analyzed with the help of optical microscopy and scanning electron microscopy (SEM). The L10, L50, La and mean RCF life L of treated bearing samples, in 90% confidence level, increases by 10.1, 4.2, 3.5 and 3.4 times, respectively. Compared with the bearing steel substrate, the RCF life scatter extent of Ti/TiN/DLC multilayer films sample is improved obviously.  相似文献   

10.
In this paper we introduce mechanical and structural characteristics of diamond-like carbon (DLC) films which were prepared on silicon substrates by radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) method using methane (CH4) and hydrogen (H2) gas. The films were annealed at various temperatures ranging from 300 to 900 °C in steps of 200 °C using rapid thermal processor (RTP) in nitrogen ambient. Tribological properties of the DLC films were investigated by atomic force microscopy (AFM) in friction force microscopy (FFM) mode. The structural properties of the films were obtained by high resolution transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). The wettability of the films was obtained using contact angle measurement. XPS analysis showed that the sp3 content is decreased from 75.2% to 24.1% while the sp2 content is increased from 24.8% to 75.9% when the temperature is changed from 300 to 900 °C. The contact angles of DLC films were higher than 70°. The FFM measurement results show that the highest friction coefficient value was achieved at 900 °C annealing temperature.  相似文献   

11.
We have deposited diamond-like carbon (DLC) films by electrodeposition technique in methanol liquid. XPS showed the films mainly contain carbon. IR spectrum indicated that as-deposited films are hydrogenated carbon films, with the hydrogen mainly bonded to sp3 carbon. Raman measurement suggested that the films consisted of sp3 and sp2 carbon. The field emission (FE) property of DLC coated on Si has been measured. The field emission of DLC films started at an applied voltage of 160 V, compared with silicon tip arrays at 600 V, and an emission current of DLC films up to 55 A at 360 V was achieved.  相似文献   

12.
Ion beam deposited hydrogenated undoped as well as SiOx (SiOx + N2, SiOx + Ar) doped DLC thin films were deposited and evaluated as possible anti-adhesive layers for nanoimprint lithography. Film surface contact angle with water was investigated as a measure of the surface free energy and anti-sticking properties. Contact angle of the DLC films was independent of SiOx doping and ion beam energy. Air-annealing resistance in terms of the contact angle with water of the synthesized diamond like carbon films was investigated. Optical transmittance spectra of the DLC films in UV-VIS range were measured to investigate it as possible anti-sticking layers for UV imprint lithography applications. DLC films with the most promising combination of the UV absorption and anti-sticking properties were revealed. Preliminary imprint tests with uncoated and thin DLC film coated hot imprint stamps were performed.  相似文献   

13.
Y.S. Zou  Y.F. Wu  C. Sun 《Vacuum》2009,83(11):1406-1629
The nitrogen incorporated diamond-like carbon films were deposited on Si (100) substrates by arc ion plating (AIP) under different N2 content in the gas mixture of Ar and N2. The influence of N2 content on the film microstructure and mechanical properties was studied by atomic force microscopy, transmission electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and nanoindentation. It was found that the hardness (H), elastic modulus (E), elastic recovery (R) and plastic resistance parameter (H/E) decrease with increasing the nitrogen content. The decrease of mechanical properties of DLC films resulted from nitrogen incorporation was associated with total sp3 carbon bond content and N-sp3C bond content. The structural modification as well as mechanical properties of the annealed nitrogen incorporated diamond-like carbon films was investigated as a function of annealing temperature. Raman spectra indicate that the ID/IG ratio starts to increase and G peak position shifts upward at the annealing temperature over 500 °C. The hardness and elastic modulus of thermally annealed nitrogen incorporated DLC films decreased slightly at lower annealing temperature and then significantly decreased at higher annealing temperature. The strong covalent bonding between C and N atoms is expected to be effective on their thermal stability enhancement.  相似文献   

14.
使用等离子体浸没离子注入与沉积(PIII&D)技术在轴承钢基体表面合成类金刚石(DLC)薄膜,研究了薄膜的结构和性能,结果表明,所制备的DLC薄膜主要是由金刚石键(sp3)和石墨键(sp2)组成的混合无定形碳,且sp3键含量大于10%,DLC膜层致密均匀,与基体结合良好,DLC膜具有很高的硬度和杨氏模量,分别达到40 GPa和430 GPa;其最低摩擦系数由基体的0.87下降到0.2,被处理薄膜试件在90%置信区间下的L10、L50、La和平均寿命L较基体分别延长了10.1倍、4.2倍、3.5倍和3.4倍,PIII&D轴承钢滚动接触疲劳寿命的分散性得到了显著改善.  相似文献   

15.
It is important to understand the growth of CNT-diamond composite films in order to improve the inter-link between two carbon allotropes, and, in turn, their physical properties for field emission and other applications. Isolated diamond particles, continuous diamond thin films, and thin films of carbon nanotubes (CNTs) having non-uniformly distributed diamond particles (CNT-diamond composite films) were simultaneously grown on unseeded, seeded, and catalyst pre-treated substrates, respectively, using a large-area multi-wafer-scale hot filament chemical vapor deposition. Films were deposited for four different growth durations at a given deposition condition. The changes in surface morphology and growth behavior of diamond particles with growth duration were investigated ex situ using field emission scanning electron microscopy and 2D confocal Raman depth spectral imaging, respectively. A surface morphological transition from faceted microcrystalline nature to nanocrystalline nature was observed as a function of growth duration in the case of isolated diamond particles grown on both unseeded and catalyst pre-treated substrates. However, such a morphological transition was not observed on the simultaneously grown continuous diamond thin films on seeded substrates. 2D confocal Raman depth spectral imaging of diamond particles showed that the local growth of CNTs did not affect the growth behavior of neighboring diamond particles on catalyst pre-treated substrates. These observations emphasize the importance of surface chemical reactions at the growth site in deciding sp2 or sp3 carbon growth and the final grain size of the diamond films.  相似文献   

16.
Boron nitride films on diamond buffer layers of varying grain size, surface roughness and crystallinity are deposited by the reaction of B2H6 and NH3 in a mixture of H2 and Ar via microwave plasma-assisted chemical vapor deposition. Various forms of boron nitride, including amorphous α-BN, hexagonal h-BN, turbostratic t-BN, rhombohedral r-BN, explosion E-BN, wurzitic w-BN and cubic c-BN, are detected in the BN films grown on different diamond buffer layers at varying distances from the interface of diamond and BN layers. The c-BN content in the BN films is inversely proportional to the surface roughness of the diamond buffer layers. Cubic boron nitride can directly grow on smooth nanocrystalline diamond films, while precursor layers consisting of various sp2-bonded BN phases are formed prior to the growth of c-BN film on rough microcrystalline diamond films.  相似文献   

17.
 QQC, Inc. has developed a revolutionary diamond deposition technique which does not require a vacuum, or H2, or ”chemical” or physical pre-treatment of surfaces. The process utilizes a combination of various pulsed lasers and is performed at the laboratory p−t conditions: with CO2 and N2 as shrouding gases. Crystalline diamond films and DLC or, more accurately, tetrahedral non-crystalline carbon (TNC) have been formed on various substrates. On WC cutting tools the rate of deposition of crystalline diamond is approximately 1 μm/sec. In the context of fabricating a diamond coating on a substrate, the entire pre-surface treatment and material synthesis process including a coating regime, is performed in one step. Received: 10 September 1997/Accepted: 25 September 1997  相似文献   

18.
Diamond films were deposited by magnetron sputtering of vitreous carbon disc and also by plasma CVD technique using C2H2 + H2 or CO2 + H2 gas mixtures. The films were characterized by measuring the electrical, optical and microstructural properties. FTIR and Raman studies were carried out to study the effect ofsp 2 andsp 3 bonds present in the films. The films had a high mechanical stress which was determined from the broadening of the optical absorption tail in the films.  相似文献   

19.
Diamond-like carbon (DLC) films with different structures were deposited on Si (100) and stainless steel substrates in a hybrid deposition system with Ar and CH4 as the feedstocks. The effects of the bias voltage, Ti-interlayer, Ti functional gradient layer and Ti-doping on the internal stress in DLC films were investigated. The results show that the internal stress in DLC films arises from both the intrinsic stress generated during the film growth and the thermal stress generated due to the mismatching of the thermal expansion coefficient between the DLC films and the substrate materials. The intrinsic stress can be released through doping titanium element at the expense of reducing the sp3/sp2 ratio. The thermal stress in DLC films can be decreased through introducing Ti-interlayer or Ti functional gradient layer. Noticeably, DLC films with very low internal stress deposited on stainless steel can be obtained through the combination of Ti-doping and Ti functional gradient layer.  相似文献   

20.
Diamond like carbon (DLC) films were deposited on Si (111) substrates by microwave electron cyclotron resonance (ECR) plasma chemical vapour deposition (CVD) process using plasma of argon and methane gases. During deposition, a d.c. self-bias was applied to the substrates by application of 13·56 MHz rf power. DLC films deposited at three different bias voltages (−60 V, −100 V and −150 V) were characterized by FTIR, Raman spectroscopy and spectroscopic ellipsometry to study the variation in the bonding and optical properties of the deposited coatings with process parameters. The mechanical properties such as hardness and elastic modulus were measured by load depth sensing indentation technique. The DLC film deposited at −100 V bias exhibit high hardness (∼ 19 GPa), high elastic modulus (∼ 160 GPa) and high refractive index (∼ 2·16–2·26) as compared to films deposited at −60 V and −150 V substrate bias. This study clearly shows the significance of substrate bias in controlling the optical and mechanical properties of DLC films.  相似文献   

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