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1.
Elwakil  A.S. Kennedy  M.P. 《Electronics letters》1998,34(12):1161-1162
A Wien-type oscillator based on a current feedback opamp (CFOA) employed as a non-inverting voltage-controlled voltage source is modified for chaos by adding an inductor and a general purpose signal diode. By using a CFOA as the active element, high operating frequencies are possible. The chaotic oscillator is described by a fourth order system of differential equations. Experimental results, PSpice simulations and numerical simulation of the proposed model are included  相似文献   

2.
This article presents a multiphase sinusoidal oscillator using current differencing transconductance amplifier (CDTA)-based allpass filters. The oscillation condition and oscillation frequency can be orthogonally controlled. The proposed circuit provides 2n – phase signals (n≥2) that are equally spaced in phase and of equal amplitude. The circuit requires one CDTA, two resistors and one capacitor for each phase and no additional current amplifier. Owing to high-output impedances, the proposed circuit enables easy cascading in current-mode configurations. The effects of the nonidealities of the CDTA-allpass sections were also studied. The results of PSpice simulations are presented, demonstrating their consistency with theoretical assumptions.  相似文献   

3.
A new current conveyor (CC) based minimum-component oscillator structure has been proposed which provides the following advantageous features over the previously known minimum-component designs: (i) noninteracting control of frequency of oscillation through a single grounded resistor, (ii) easy convertibility into a voltage-controlled oscillator (iii) use of two grounded capacitors as preferred for IC implementation, (iv) availability of a buffered output, and (v) very good frequency stability.<>  相似文献   

4.
We have demonstrated a submicron heterojunction bipolar transistor (SHBT) with a unity current gain cutoff frequency (ft) of 160 GHz at the very low current level of 1 mA. The AlInAs/InGaAs SHBT has a thin collector and uses stepper lithography with 0.1 μm registration accuracy to reduce the parasitic elements that typically limit the performance of small transistors. The same device has 100 GHz ft at 200 μA. The result substantially improves upon the cutoff frequency of submicron compound semiconductor devices. The technology is appropriate for high speed, low power, high-density circuits  相似文献   

5.
This paper presents static and dynamic studies of a new CMOS realization for the inverting second generation current conveyor circuit (ICCII). The proposed design offers enhanced functionalities compared to ICCII circuits previously presented in the literature. It is characterized by a rail to rail dynamic range with high accuracy, a low parasitic resistor at terminal X (1.6 Ω) and low power consumption (0.31 mW) with wide current mode (3.32 GHz) and voltage mode (3.9 GHz) bandwidths.Furthermore, a new MISO current mode bi-quadratic filter based on using ICCII circuits as active elements is proposed. This filter can realize all standard filter responses without changing the circuit topology. It is characterized by active and passive sensitivities less than unity and an adjustment independently between pole frequency and quality factor. The operating frequency limit of this filter is about 0.8 GHz with 0.674 mW power consumption.The proposed current conveyor circuits and bi-quadratic filter are tested by TSPICE using CMOS 0.18 µm TSMC technology with ±0.8 V supply voltage to verify the theoretical results.  相似文献   

6.
This paper introduces a simple switch-controllable bistable multivibrator with dual hysteresis modes. The proposed configuration comprises a single differential voltage current conveyor (DVCC) as a main active building block with two external resistors. Both clockwise and counter-clockwise hysteresis operations can be performed using the same topology. The upper and lower threshold voltages of the bistable multivibrator can be adjusted using external passive elements. The operation of the circuit is described in detail with a discussion of the non-ideal effects and other considerations in the design of the proposed circuit. To demonstrate the feasibility of the circuit, researchers built a prototype using commercially available ICs and discrete components. Simulation results and experimental records are presented to confirm the theoretical analysis.  相似文献   

7.
Kaya  L. Honary  B. 《Electronics letters》1993,29(21):1833-1834
A combined coding and phase/frequency modulation technique employing an array coding scheme is described and a performance analysis of this technique is presented. It is shown that this technique gives asymptotically approximately 2 to 3 dB coding gain in comparison with an uncoded transmission.<>  相似文献   

8.
A study is made of the application of heterojunction bipolar transistors (HBTs) to low-noise microwave circuits. Design considerations and the low-noise performance of a Ku-band free-running oscillator using a self-aligned AlGaAs/GaAs HBT are described. The device has a novel structure in which, by utilizing SiO 2 sidewalls, the base surface area, which is the main cause of low-frequency noise, is drastically reduced. For a collector current of 1 mA, the fabricated device has base current noise power densities of 4×10-20, 6×10-21, and 2.5×10-21 A2/Hz at baseband frequencies of 1, 10, and 100 kHz, respectively. A prototype oscillator operating at 15.5 GHz has a measured output power of 6 dBm and SSB FM noise power densities of -34 dBc/Hz at 1 kHz, -65 dBc/Hz at 10 kHz, and -96 dBc/Hz at 100 kHz off-carrier, without using high-Q elements such as a dielectric resonator. The results of this study demonstrate the suitability of HBTs for low-phase-noise microwave and millimeter-wave oscillator applications  相似文献   

9.
A novel optical frequency stabilisation technique on the ITU-T frequency grid employing modulated sideband light is proposed. The L-band laser diode second sideband light generated by phase-modulation is locked to a carbon monoxide 12C16O gas absorption line; the original carrier is placed on the ITU-T frequency grid. The square root of Allan variance of 10-8 has been achieved for a period of 12 h.  相似文献   

10.
A new active RC second-order sinusoidal oscillator using a single second generation current conveyor is described. A single grounded resistor adjusts the circuit for oscillation and a single grounded capacitor controls the oscillation frequency without affecting the oscilllation condition.  相似文献   

11.
A combined phase/frequency modulation technique employing Reed Muller (RM) codes is described. The performance of the combined coding and modulation RM code is presented. It is shown that this technique gives asymptotically ~4.8 dB coding gain in comparison with an uncoded transmission  相似文献   

12.
Sensorless current mode (SCM) control is an observer method that provides the operating benefits of current mode control without current sensing. SCM has significant advantages over both conventional peak and average current-mode control techniques in noise susceptibility and dynamic range in both continuous mode and discontinuous mode. The method supports line and bulk load regulation, and reduces control complexity to a single loop. It also supports conventional two-loop control for tight load regulation. Encompassing one-cycle control as a special case, the general SCM method is a public domain control technique  相似文献   

13.
Nedungadi  A. 《Electronics letters》1980,16(11):418-419
A high current class AB convertor technique offering both v.c.c.s. and c.c.c.s. capability is described. A simple realisation is proposed which provides peak output currents greater than 100 mA with low distortion and reduced supply drain over a useful frequency range.  相似文献   

14.
High frequency current conveyor precision full-wave rectifier   总被引:4,自引:0,他引:4  
The design of a precision full-wave rectifier using current conveyors is reported. The design uses a voltage reference circuit to clad the voltage excursions at the output of the rectifier during the zero crossings, which ensures that the usual large signal distortion associated with classical precision rectifiers is avoided. Measured rectifier performance using a 100 MHz current conveyor demonstrates good rectifier integrity at an operating frequency of 30 MHz  相似文献   

15.
A multisensor employing an ultrasonic Lamb-wave oscillator   总被引:1,自引:0,他引:1  
Initial experimental, analytical, and numerical evaluations of a microsensor that uses ultrasonic Lamb waves propagating in a thin plate supported by a silicon die are presented. Changes of oscillator frequency indicate magnitudes of the variables sensed. Because it is sensitive to many measurands, the device could operate as a microphone, biosensor, chemical vapor or gas detector, scale, pressure sensor, densitometer, radiometer, or thermometer. Because it is based on the use of Lamb waves, the sensor has selective response and sensitive operation in the low-megahertz frequency range in vacuum, in a gas, or while immersed in a liquid  相似文献   

16.
A high linearity current communicating passive mixer including the mixing cell and transimpedance amplifier(TIA) is introduced.It employs the resistor in the TIA to reduce the source voltage and the gate voltage of the mixing cell.The optimum linearity and the maximum symmetric switching operation are obtained at the same time.The mixer is implemented in a 0.25μm CMOS process.The test shows that it achieves an input third-order intercept point of 13.32 dBm,conversion gain of 5.52 dB,and a single sideband noise figure of 20 dB.  相似文献   

17.
We report 50-nm T-gate metamorphic high-electron mobility transistors (MHEMTs) with low noise figure and high characteristics. The 30 mumtimes2 MHEMT shows a drain current density of 690 mA/mm, a gm,max of 1270 mS/mm, an fT of 489 GHz, and an of 422 GHz. In the frequency range of 59-61 GHz, the noise figure is less than 0.7 dB, and the associated gain was greater than 9 dB at a drain voltage of 1.3 V and a gate voltage of -0.8 V. To our knowledge, the MHEMT shows the best performance in terms of and noise figure among GaAs-based HEMTs.  相似文献   

18.
王坚 《电子设计工程》2013,21(8):174-176
针对模拟型频率/电流变送器在低频段存在精度差、响应速度慢的问题,提出了一种基于AT89S52单片机的频率/电流变送器设计方案,并完成了系统的软硬件设计。该系统主要由M/T法测频电路、D/A转换器、V/I转换电路、RS232通讯接口组成,能够对频率进行高精度测量,并将其转换成4-20 mA标准信号。实验证明,所设计的系统运行稳定,人机对话方便,在整个测量频段,系统响应快、精度高、无纹波,达到了设计要求。  相似文献   

19.
A synchronous oscillator using a high speed low-voltage emitter coupled logic (ECL) inverter has been reported. Using the positive feedback the locking range increases, compared to the oscillator without any positive feedback. A maximum improvement (increase) of percentage locking range of around 105% was obtained from circuit simulation as well as from practical circuit, using discrete components. Because the locking range is maximum at double the output frequency of the oscillator, this oscillator can be used as a high frequency divider circuit. The circuit requires a supply voltage of 2.1 V.  相似文献   

20.
A new principle for a high speed BiCMOS differential track-and-hold circuit based on current mode processing is presented, and simulation results are given. The main characteristics are an acquisition time of 5.5 ns for 8 bit precision and a small-signal bandwidth of 1 GHz  相似文献   

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