离子束溅射Si／Ge多层膜的界面结构研究

采用离子束溅射技术，在玻璃衬底上制备了不同周期数的Si／Ge多层膜样品。通过Raman光谱和X射线小角衍射对薄膜进行了表征和分析，发现随着生长周期数的增加，层与层之间的互扩散效应逐渐减弱，界面结构逐渐清晰，生长周期为25的样品界面最平整。     

多弧离子镀与磁控溅射联用镀制TiN/SiO_2复合装饰薄膜的研究

本文结合多弧离子镀和磁控溅射两种镀膜方法的优点,制备了Ti N/Si O2复合薄膜。通过扫描电镜可以观察到,制备的复合膜比单纯的氮化钛薄膜更加致密和光滑,基本消除了大颗粒的影响。另外,可以通过控制溅射Si O2的时间实现对膜层色度的控制。在本文的试验条件下,当氧化硅溅射时间为30 min时,得到的膜层为咖啡色,当氧化硅溅射时间为1 h,膜层为玫瑰红色。采用两种镀膜手段联用的方法,可以得到高品质,颜色丰富的膜系。     

硅、锗材料在Si(100)表面的生长研究

利用扫描隧道显微镜和超高真空实验装置系统进行了Si(10 0 )表面生长Si,Ge的实验研究。分析了所生成表面的形貌、结构等物理性质。研究表明 :Si在Si(10 0 )表面的同质生长可以形成纳米结构薄膜。Ge在Si(10 0 )表面生长形成规则的三维小岛。而在Si/Ge/Si(10 0 )多层膜上生长则形成大小二种三维岛。研究表明大岛具有Ge/Si/Ge的壳层结构     

硅、锗材料在Si（100）表面的生长研究

利用扫描隧道显微镜和超高真空实验装置系统进行了Si（100）表面生长Si，Ge的实验研究。分析了所生成表面的形貌、结构等物理性质。研究表明：Si在Si（100）表面的同质生长可以形成纳米结构薄膜。Ge在Si（100）表面生长形成规则的三维小岛，而在Si/Ge/Si（100）多层膜上生长则形成大小二种三维岛，研究表明大岛具有Ge/Si/Ge的壳层结构。     

埋层应变对溅射生长Ge量子点的影响

利用离子束溅射制备双层Ge/Si量子点,通过变化Si隔离层厚度和Ge沉积量研究了埋层应变场对量子点生长的影响。实验中观察到隔离层厚度较薄时,双层结构中第2层量子点形成的临界厚度减小,生长过程提前;此外,随着Ge沉积量的增加,第2层量子点密度维持在一定范围,分布被调制的同时岛均匀长大呈现单模分布。增大隔离层厚度,埋层岛的生长模式在第2层岛生长时得到复制。通过隔离层传递的不均匀应变场解释了量子点生长模式的变化。     

Ge/Si纳米多层膜的埋层调制结晶研究

采用磁控溅射设备,当衬底温度为500℃时,在Si(100)基片上磁控溅射生长Ge/Si多层膜样品.使用Raman,AFM和低角X射线技术对样品进行检测和研究,结果表明通过控制Ge埋层的厚度,可以调制Ge膜的结晶及晶粒尺寸,获得晶粒平均尺寸和空间分布较均匀的多晶Ge/Si多层膜.     

反应溅射HfC/Si3N4纳米多层膜的微结构与力学性能

通过反应磁控溅射制备了一系列不同Si3N4层厚的HfC/Si3N4纳米多层膜,采用X射线光电子能谱、X射线衍射、扫描电子显微镜和微力学探针表征了多层膜的微结构、硬度与弹性模量,研究了Si3N4层厚度变化对纳米多层膜微结构与力学性能的影响。结果表明,溅射的Si3N4粒子不与C2H2气体反应,因NaCl结构HfC晶体调制层的模板效应,溅射态为非晶的Si3N4层在厚度小于约1 nm时被强制晶化,并与HfC晶体层形成共格外延生长结构,多层膜呈现强烈的(111)择优取向柱状晶,其硬度和弹性模量显著上升,最高值分别达到38.2 GPa和343 GPa。进一步增加Si3N4层的厚度后,Si3N4层转变为以非晶态生长,多层膜的共格外延生长结构受到破坏,其硬度和模量也相应降低。     

不同制备条件下的Co/Cu多层膜的巨磁电阻及铁磁共振研究

用溅射方法制备了几批Co／Cu多层膜和夹层膜样品,通过测试发现：Co／Cu多层膜样品的巨磁电阻与制备条件有关。在较高本底真空和较低工作气压条件下制备的样品具有较大的巨磁电阻,其铁磁共振测试的结果和Heinrich的夹层膜的理论计算结果相吻合．     

离子束沉积技术室温生长Si/Ge薄膜的晶化研究

研究Si的室温晶化生长对微电子应用技术是十分重要的.本文采用离子束外延技术制备了一系列的Si/Ge多层膜结构,对样品进行X射线和拉曼散射实验表征.研究表明Ge可诱导膜中Si薄层的室温晶化,当Ge厚度略小于Si薄层厚时,获得最佳的Si室温晶化效果.     

Ge/Si多层膜热稳定性的Raman光谱研究

用Raman光散射的方法，观察了磁控溅射技术制备的Ge/Si系列多层膜退火处理后的各Raman峰的变化，对其峰形、峰位及峰强的变化进行讨论分析。实验结果显示：Ge/Si多层膜经700℃热处理10min后，能改善各层的晶体质量，得到较完整的多层膜的结构。     

外加偏压对未退火Co/n-poly-SiGe肖特基接触特性的影响

采用直流离子束溅射法,在n型单晶硅衬底上淀积Si1-xGex薄膜.俄歇电子谱(AES)测得Si1-xGex薄膜的Ge含量约为0.15.对薄膜进行高温磷扩散后,经XRD测试为多晶态,即得n-poly-Si0.85Ge0.15.在n-poly-Si0.85Ge0.15上溅射一层薄的Co膜,做成Co/n-poly-Si085Ge0.15肖特基结样品.在90～332 K范围对未退火样品做I-V-T测试.研究发现,随着外加偏压增大,表观理想因子缓慢上升,肖特基势垒高度(SBH)下降.基于SBH的不均匀分布建模,得到了二者近似为线性负相关的结论.     

硅基氧化物薄膜的结构及光吸收特性的研究

采用射频磁控共溅射方法制备了纳米Ge颗粒尺寸的Ge-SiO2薄膜、非晶Si-SiO2薄膜和非晶AlSiO复合薄膜，分析了样品的结构，研究发现3类样品均存在较强的吸收，对于Ge-SiO2薄膜观察到光吸收边随Ge颗粒尺寸变小而蓝移的现象，这主要是由于Ge颗粒的量子限域效应所引起的。而对于非晶样品也出现了光吸收边蓝移和能隙展宽的现象，这可能是由于样品中的杂质或缺陷等受到限域作用的结果。     

Preparation of amorphous FexSi(1 − x) film using unbalanced magnetron sputtering

The preparation of iron-silicon films was performed onto Si (100) substrates by microwave electron cyclotron resonance (ECR) plasma source enhanced unbalance magnetron sputtering. The compositions, microstructures and properties of films under different sputtering powers and annealing conditions were characterized by AES, GAXRD, TEM and absorption spectrum techniques. The results described that the amorphous iron silicon films can be easily prepared by unbalance magnetron sputtering. Even the Fe/Si ratio deviated far from 1:2, such as Fe/Si = 1:14.8 or 1:10, the amorphous iron silicon film with semiconductor properties can also be obtained, which suggests that the Fe/Si ratio is not the only factor to determine whether the samples have semiconducting properties in iron silicon amorphous. After annealing at 850 °C for 4 h, the microstructure of nanometer β-FeSi₂ embedded into amorphous Si still possesses semiconducting characteristics.     

Nanowire array fabricated by Al-Ge phase separation

Phase-separated Al-Ge films, composed of Al nanowire array with diameters ranging from less than 10 to 18 nm embedded in an amorphous Ge matrix, have been prepared by a sputtering method. Similar to lateral phase separation of Al-Si system, sputtered Al and Ge form an Al nanowire array surrounded by a Ge matrix during film growth when the preparation conditions are optimized. Removal of the Al nanowires from the phase-separated Al-Ge films by etching in acid solution provides nanoporous films with a pore density on the order of 10¹⁵ pores/m². Template-assisted growth of Ni nanowires into the nanopores was carried out to increase the potential applications of the phase-separated Al-Ge films.     

Origin of photoluminescence peaks in Ge–SiO2 thin films

Ge–SiO₂ thin films were prepared by the RF magnetron sputtering technique on p–Si substrates from a Ge–SiO₂ composite target. The asdeposited films were annealed in the temperature range of 300–10000C under nitrogen ambience. The structure of films was evaluated by X–ray diffraction, X-ray photoemission spectroscopy and Fourier transform infrared absorption spectroscopy. Results show that the content of Ge and its oxides in thefilms change with increasing annealing temperature (Ta), the photoluminescence (PL) characteristics are closely dependent on the contents of Ge and its oxides in SiO₂ matrix. The dependence observed strongly suggests that the PL peak at 394 nm is related to the existenceof GeO and 580 nm to that of Ge nanocrystal (nc-Ge) in the films. © 2002 Elsevier Science Ltd. All rights reserved.     

体硅上外延超薄Si1-xGex用于制备SGOI材料

采用减压化学气相沉积的方法在Si衬底上制备了高质量的Si0.75Ge0.25/Si/Si0.86Ge0.14叠层材料,通过TEM、光学显微镜和XRD分析表明,外延的SiGe薄膜具有完好的晶格结构,平整的表面质量,SiGe薄膜处于完全应变状态.通过与Si上外延渐变缓冲层制备的SiGe材料比较发现,使用这种超薄的全应变Si...     

Mg2Si薄膜的磁控溅射制备及表征

采用直流磁控溅射的方法在Si(100)衬底上制备了Mg2Si外延半导体薄膜。通过XRD和FESEM对Mg2Si薄膜的晶体结构和表面形貌进行了表征,分析了溅射功率对Mg2Si薄膜制备的影响,得到了Mg2Si薄膜在不同溅射功率下的外延生长特性。结果表明,在Si(100)衬底上,Mg2Si薄膜具有(220)的择优生长特性,并且在50~80W的溅射功率范围内,随着溅射功率的增加,Mg2Si外延薄膜的衍射峰强度逐渐增强。     

Comparative study of (Ba,Sr)TiO3 films prepared by electron cyclotron resonance plasma sputtering and metal-organic decomposition

(Ba,Sr)TiO₃ films were prepared on Pt/Ti/SiO₂/Si substrates by mirror-confinement-type electron cyclotron resonance (ECR) plasma sputtering as well as by metal-organic decomposition (MOD). The films prepared by ECR plasma sputtering were crystallized at lower temperatures with better crystallinity and a denser structure than those by MOD. As for dielectric constant, films prepared by ECR plasma sputtering exhibited a relatively high value over 500 at a low annealing temperature of 873 K, whereas films by MOD exhibited approximately 350. This is attributed to the better crystallinity and the denser structure of the films by ECR plasma sputtering. The leakage current density of the films was found to be similar in both processes.     

Fe3Si薄膜的制备和性能研究

介绍了Fe3Si的一些基本特性及Fe3Si薄膜的几种主要制备方法,重点介绍了分子束外延法中不同类型衬底、温度对Fe3Si薄膜形成的影响,并且分析了各种制备方法中的一些重要参数对薄膜结构及性质的影响。随着Fe3Si薄膜制备工艺的不断完善,Fe3Si薄膜将会成为一种性能优秀的自旋电子器件。