铸态Mg-4Al-4Si-0.75Sb合金的显微组织与力学性能

采用重力铸造法制备Mg-4Al-4Si-0.75Sb(AS44-0.75Sb)(质量分数/%,下同)镁合金,研究铸态合金的显微组织和室温力学性能。结果表明:铸态AS44-0.75Sb合金主要由α-Mg基体、β-Mg17Al12相、Mg2Si相和Mg3Sb2相组成;加入0.75Sb后形成高熔点的Mg3Sb2相,显著改善了Mg2Si相的形貌,使粗大的骨骼状Mg2Si转变为相对细小的汉字状Mg2Si。铸态合金的硬度HV为65.9,屈服强度为136.4MPa,抗拉强度为172.3MPa,伸长率为3.3%;拉伸断裂形式为准解理脆性断裂。     

Sb对Mg-3Sn-1.5Al-1Zn-1.2Si合金组织性能的影响

在熔炼过程中以单质形式加入Sb,研究了0~1.8%(质量分数,下同)范围内不同含量的Sb对Mg-3Sn-1.5Al-1Zn-1.2Si合金显微组织和力学性能的影响。结果表明,Sb能与Mg基体优先生成Mg3Sb2相,加入1.0%的Sb对Mg2Si相的汉字状结构变质作用显著,Mg2Si中的Si能与Sn发生取代反应,生成富Sn的Mg2(Si,Sn)。随着Sb的增加,铸态合金和挤压态合金的延伸率逐渐减小,而抗拉强度呈现先增加后降低的趋势,塑性和强度的最佳配合点约为1.0%,Sb含量的增加有利于改善Mg-3Sn-1.5Al-1Zn-1.2Si合金的耐热性能。     

Sb对Mg-3Sn-1.5Al-1Zn-1.2Si合金组织性能的影响

在熔炼过程中以单质形式加入Sb,研究了0~1.8%(质量分数,下同)范围内不同含量的Sb对Mg-3Sn-1.5Al-1Zn-1.2Si合金显微组织和力学性能的影响。结果表明,Sb能与Mg基体优先生成Mg3Sb2相,加入1.0%的Sb对Mg2Si相的汉字状结构变质作用显著,Mg2Si中的Si能与Sn发生取代反应,生成富Sn的Mg2(Si,Sn)。随着Sb的增加,铸态合金和挤压态合金的延伸率逐渐减小,而抗拉强度呈现先增加后降低的趋势,塑性和强度的最佳配合点约为1.0%,Sb含量的增加有利于改善Mg-3Sn-1.5Al-1Zn-1.2Si合金的耐热性能。     

Si对AM30变形镁合金组织和力学性能的影响

为了提高Mg-3Al-0.4Mn合金的常温力学性能,研究了铸态和挤压态下Si含量对AM30合金的组织和力学性能的影响.结果表明,增加Si的添加量会生成粗大的汉字状的Mg2Si相,不利于提高合金的力学性能;但经过挤压后,呈汉字状Mg2Si相破碎,变成颗粒细小的Mg2Si相,晶粒细化,有利于提高合金的性能.     

Si对AZ91D镁合金显微组织与力学性能的影响

利用光学金相显微镜OM和XRD分析了加入微量Si的AZ91D合金显微组织和相组成,测试了合金室温拉伸力学性能和硬度,利用SEM分析了合金拉伸断口形貌.结果表明,加入一定量Si后AZ91D合金组织中形成汉字状Mg2Si相,富集于固液界面前沿,阻碍α-Mg基体的自由长大,从而细化合金铸态组织;汉字状Mg2Si相的存在导致合金力学性能的降低;AZ91D合金室温拉伸断口是以解理断裂为主的脆性断裂,加入Si后,断裂常发生于α-Mg基体和汉字状Mg2Si相间的界面处.     

Ca对Mg-8Zn-3.2Al-0.9Si-0.3Mn合金显微组织及性能的影响

采用光学显微镜(OM)、X射线衍射仪(XRD)、带能谱分析(EDS)的扫描电子显微镜(SEM)等分析手段研究了元素Ca对Mg-8Zn-3.2Al-0.9Si-0.3Mn合金基体及Mg2Si相的细化效果及其细化机制。结果表明:Ca的加入能够使Mg2Si初生相由粗大的汉字状变为细小、弥散分布的颗粒状,并使合金基体组织显著细化。Ca对Mg2Si相的变质是以CaSi2作为Mg2Si相的异质形核核心和Ca作为表面活性元素影响其生长两种机制共同作用的结果。由于显微组织的改善,使得合金的室温和高温力学性能均得到提高。     

变质处理对挤压态Al-20Mg2Si-4.5Cu合金初生及共晶Mg2Si变质形貌的影响机制

目的 研究微量元素复合变质下挤压态Al-20Mg2Si-4.5Cu合金初生Mg2Si和共晶Mg2Si的形貌演化规律,揭示Mg2Si相的变质和球化机制。方法 采用形貌调控元素Be和异质形核元素Sb协同变质调控初生及共晶Mg2Si相的形貌,然后结合挤压工艺对初生及共晶Mg2Si形貌进行进一步调控。结果 经0.5%(质量分数)Be-Sb复合变质与挤压工艺处理后,初生Mg2Si转变为近球形,尺寸约为10 μm,共晶Mg2Si转变约1 μm的球形。结论 挤压变形可以使Be-Sb复合变质后的合金中的初生及共晶Mg2Si相发生明显球化。其中,Sb元素生成的Mg3Sb2相作为初生Mg2Si的异质核心,有效细化了初生Mg2Si相;Be元素选择性吸附在初生Mg2Si及共晶Mg2Si的择优生长晶面上。     

铸态Mg-4Al-2Si合金的显微组织与力学性能

采用重力铸造法制备Mg-4Al-2Si(AS42)镁合金,研究了铸态合金的显微组织和室温力学性能。结果表明:铸态AS42合金主要由α-Mg基体、β-Mg17Al12相及Mg2Si相组成;β-Mg17Al12相呈网状和棒状分布于晶界上,粗大的汉字状Mg2Si相沿晶界或穿晶分布,多边形块状Mg2Si相随机分布于基体组织中。铸态合金的硬度为64.5 HV,室温抗拉强度为113.5 MPa,屈服强度为86 MPa,伸长率为4.1%;拉伸断裂形式为准解理脆性断裂。     

往复挤压Mg-4Al-2Si合金中Mg2Si颗粒形貌与分布

使用往复挤压细化Mg-4Al-2Si (AS42)合金组织,利用OM,SEM和TEM研究Mg2 Si颗粒形貌和分布特征.结果表明,铸态AS42合金中Mg2Si颗粒呈共晶汉字状和初生块状.共晶Mg2 Si经2道次往复挤压后全部破碎,且分布均匀.经6道次挤压后初生Mg2 Si颗粒全部破碎,细小的Mg2 Si颗粒已基本球化....     

Mg和Si含量对一种低频电磁铸造新型高强Al-Mg-Si-Cu合金组织性能的影响

结合金相组织观察及能谱分析、DSC热差分析、JMat Pro 5.0软件计算和室温力学性能测试,研究低频电磁铸造新型高强Al-Mg-Si-Cu合金铸态、挤压态和T6态的组织性能。结果表明,该新型合金系的均匀化温度和固溶温度可分别确定为540℃和550℃。Mg_2Si强化相能显著细化合金铸态组织且细化程度随其含量增大递增,而过量Si或过量Mg均能减弱细化剂和Mg_2Si相对合金铸态组织的细化作用。Mg的过量添加不会降低合金强度但可提高其延伸率至19%以上。该新型Al-Mg-Si-Cu合金中,当Mg质量分数为1.60%、Si质量分数为1.15%时,可获得较高强度(抗拉强度419 MPa、屈服强度362 MPa)而又不损害其塑性(延伸率18.75%)。     

Probabilistic strength of {1 1 1} n-type silicon

The two-parameter Weibull strength distribution of {1 1 1} n-type silicon prismatic bars was determined in four-point bending and analyzed as a function of specimen size (width), loading rate, two different crystallographic orientations, and specimen orientation (polished or etched surface in tension). 100% fractography was performed to classify strength-limiting flaw types and to censor the strength data. All flaw types were extrinsic. Machining or cutting damage in the form of chipped edges (an edge-type flaw) was the dominant strength-limiting flaw when the polished surface was subjected to tensile stress, while a flat-bottomed etch pit (a surface-type flaw) was the dominant strength-limiting flaw when the etched surface was subjected to tensile stress. The censored Weibull strength distribution was independent of specimen width, loading rate (indicative of slow crack growth insusceptibility), and the two crystallographic orientations; however, it was dependent on specimen orientation. Pooling of the strength data was employed to tighten the confidence intervals about the censored parameters. The results from this study indicate that different extrinsic strength-limiting flaws and strength distributions will be operative depending on the manner in which a silicon component is stressed.     

Diffusion of clusters down (1 1 1) aluminum islands

The key factor determining nucleation processes and faceting in homoepitaxial growth as well as texture competition is the mobility of adatoms and small clusters across step edges and facets. Using a combination of molecular dynamics and ab initio calculations, we investigate the mechanisms of small clusters (dimer and trimer) diffusion down the aluminum (1 1 1) surface. In this paper we report results of molecular dynamics studies. Our study shows that the clusters dissociate at the step-edge of compact islands. As a result, the clusters diffuse down the step by an exchange mechanism with a small or medium Schwoebel barrier. The mechanism of this down-diffusion/dissociation is discussed and the corresponding energetics are calculated using the molecular statics method. We find a large anisotropy between the barriers at the two types of 1 1 0 oriented steps.     

Chemical etching of {1 1 1} and {1 0 0} surfaces of InP

The effects of a number of chemical etches on the III–V semiconductor InP were studied, using {1 0 0} and {1 1 1}-type faces. The (1 1 1) and (¯1¯1¯1) faces were found to behave differently, and this was attributed to the polarity of the zinc-blende lattice. Curves showing etching rate as a function of penetration were plotted, and it is noted that they demonstrate an enhanced etching rate close to the surface. This is attributed to the damaged surface layer associated with the cutting of a crystal slice. Photographs were taken at various stages of the etching using both the optical and scanning electron microscopes. Both etch pits and etch hillocks were observed. The shapes of the pits are compared to those described in previously published work, and possible reasons for these shapes are discussed. The conditions necessary for the production of an etch hillock are described and it is shown that the measured etching rates are consistent with hillock formation in the case of the 1 HCl1HNO₃ etch. The mechanisms of dissolution are discussed and it is suggested that both activation control of the dissolution process and diffusion control were observed in the work.     

Transmission electron microscope study of the topotactic reaction of (0 0 1), (0 1 1) and (1 1 1) Ag films and Te

The formation, structure and morphology of silver telluride was investigated in the reaction of (0 0 1), (0 1 1) and (1 1 1) single crystalline Ag films with vacuum deposited Te. Silver films 30–40 nm in thickness were deposited by thermal evaporation onto water- and chlorine-treated NaCl. Onto this silver 1–40 nm of tellurium were deposited at 100 and 200 °C. The Ag–Te reaction occurred during Te deposition. Accordingly, formation of the compound phase was investigated from the nucleation stage through complete tellurization on either side of the polymorphic phase transformation temperature (T_c=150 °C). Transmission electron microscope and selected area electron diffraction showed that monoclinic silver telluride (Ag₂Te) of different morphology and texture was always formed. The orientation of silver and monoclinic phase upon differently oriented monocrystalline Ag films and at deposition temperatures around T_c is discussed.     

Checking of DIIV-1, DINIR-1, and DINS-1 instruments

Conclusions As follows from what has been said, the amount of specific measurements during the checking of DINIR-1 and DINS-1 instruments is quite large. Taking into account the constant addition to the inventory of these instruments as they are being produced, it is desirable, in the authors' opinion, to consider the problem of developing and subsequently producing a special instrument intended for the checking of various types of time interval meters.Translated from Izmeritel'naya Tekhnika, No. 6, pp. 77–81, June, 1971.     

Electrical properties of some (1, 1, 1) intermetallic compounds

Many intermetallic compounds form with a gap in their density of states at the Fermi level, giving rise to relatively large Seebeck coefficients, on the order of –150 to –300 V/deg. at room temperature. Consequently, when combined with reasonable carrier mobilities in the range of 30 to 50 cm2/V-s, half-Heusler compounds, such as MNiSn where M = (Ti, Zr, Hf), become attractive candidates for intermediate temperature (300°C to 600°C) thermoelectric applications. Samples of TiNiSn were prepared by arc melting and homogenized by various heat treatments. The temperature dependence of the electrical resistivity, Seebeck coefficient, and thermal diffusivity of these samples was characterized between 22°C and 900°C. The electrical resistivity and thermopower both decrease with increasing temperature, consistent with semiconducting behavior. The electrical power factor, defined as S2/ where S is the Seebeck coefficient and is the resistivity, appears quite sensitive to the degree of homogenization in the microstructure and values in excess of 25 W/cm-°C2 were observed in nearly single phase alloys within the 300 to 600°C temperature range. A brief survey of other selected ternary intermetallic compounds is also presented.     

Fabrication of epitaxial III-nitride cantilevers on silicon (1 1 1) substrates

The molecular beam epitaxy of AlGaN/GaN epilayers on silicon (1 1 1) using an aluminum nitride buffer layer, and subsequent fabrication of free standing III-nitride cantilevers on Si(1 1 1) has been investigated. Transmission electron microscopy (TEM) of cross-section samples reveals a columnar structure consisting of the hexagonal gallium nitride polytype. Selected area diffraction indicates an epitaxial relationship between the gallium nitride and silicon substrate which is described by GaN[0 0 0 1]//Si[1 1 1] and GaN(1 1 0 0)//Si(1 1 1). Imaging of the electronic structure of an AlGaN/GaN interface has been investigated by mapping the variation in the plasmon frequency using an electron energy loss spectrometer on a dedicated scanning transmission electron microscope. Cantilevers were fabricated using a combination of etching processes. Nitride etch rates during inductively coupled plasma dry etch processing using a Cl₂/Ar plasma etchant were obtained by monitoring the optical reflectivity of the nitride films in situ. A peak GaN etch rate of 250 nm/min was measured, the etch rate was found to be strongly dependent on the d.c. self-bias. Thin beams of GaN having a length of 7 μm and 0.7 μm thickness, were fabricated and mechanically released from Si(1 1 1) substrates using a combination of two dry ICP etch processes, using Cl₂/Ar and CF₄/Ar/O₂ chemistries, and a potassium hydroxide (KOH) aqueous wet etch.     

Fabrication of epitaxial III-nitride cantilevers on silicon (1 1 1) substrates

The molecular beam epitaxy of AlGaN/GaN epilayers on silicon (1 1 1) using an aluminum nitride buffer layer, and subsequent fabrication of free standing III-nitride cantilevers on Si(1 1 1) has been investigated. Transmission electron microscopy (TEM) of cross-section samples reveals a columnar structure consisting of the hexagonal gallium nitride polytype. Selected area diffraction indicates an epitaxial relationship between the gallium nitride and silicon substrate which is described by GaN[0 0 0 1]//Si[1 1 1] and GaN(1 1 0 0)//Si(1 1 1). Imaging of the electronic structure of an AlGaN/GaN interface has been investigated by mapping the variation in the plasmon frequency using an electron energy loss spectrometer on a dedicated scanning transmission electron microscope. Cantilevers were fabricated using a combination of etching processes. Nitride etch rates during inductively coupled plasma dry etch processing using a Cl₂/Ar plasma etchant were obtained by monitoring the optical reflectivity of the nitride films in situ. A peak GaN etch rate of 250 nm/min was measured, the etch rate was found to be strongly dependent on the d.c. self-bias. Thin beams of GaN having a length of 7 m and 0.7 m thickness, were fabricated and mechanically released from Si(1 1 1) substrates using a combination of two dry ICP etch processes, using Cl₂/Ar and CF₄/Ar/O₂ chemistries, and a potassium hydroxide (KOH) aqueous wet etch.     

Adsorption of the oxygen to the Al (1 1 1) surface

The interaction of the oxygen with the Al (1 1 1) surface is investigated by using the density-functional theory and the pseudopotential technique. We find that the oxygen molecule becomes unstable near the surface, which is induced by the charge transfer from the surface to the molecule. This result suggests that the experimentally observed “hot adatoms” of oxygen is due to the dissociation of the molecule in the area where the direct interaction with the Al atoms is weak.