Cu掺杂ZnO的光致发光光谱

ZnO是宽禁带半导体,室温下禁带宽度为3.37eV,激子束缚能高达60meV,是制备光电器件的优选材料。然而,p型掺杂仍是亟待解决的问题。ⅠB元素Cu被认为在ZnO中产生受主能级,可以实现ZnO的p型掺杂。综述了各种制备方法、制备条件和激发条件下得到的Cu掺杂ZnO薄膜、纳米线和纳米棒的光致发光谱和机理,总结出Cu掺杂ZnO光致发光谱的带边发射会因为Cu的掺杂强度降低,或出现发射中心红移等现象。可见光区域由于Cu掺杂会产生新的蓝光、绿光和橙光发射峰,蓝光发射峰可能与Cu2+-Cu+跃迁或VZn和Zni有关;绿光发射峰可能与Cu杂质或VO-VZn跃迁有关,Cu掺杂还可能引入非辐射复合的点缺陷中心;橙光发射峰则可能由于Cu杂质受主能级向深施主能级跃迁而产生。     

衬底温度对低功率直流磁控溅射ZnO薄膜特性的影响

采用低功率直流反应磁控溅射法,在Si衬底上成功制备出了具有高c轴择优取向的ZnO薄膜,利用X射线衍射仪、荧光分光光度计研究了沉积温度对ZnO薄膜微观结构及光致发光特性的影响.结果表明,合适的衬底温度有利于提高ZnO薄膜结晶质量;在室温下测量样品的光致发光谱(PL),观察到波长位于440nm左右和485nm左右的蓝色发光峰及527nm左右微弱的绿光峰,随衬底温度升高,样品的PL谱中蓝光强度都明显增大,低功率溅射对其蓝光发射具有很重要的影响.综合分析得出440nm左右的蓝光发射应与Zni有关,485nm附近的蓝光发射是由于氧空位形成的深施主能级上电子跃迁到价带顶的结果,而527nm左右的较弱的绿光发射主要来源于导带底到氧错位缺陷能级的跃迁.生长温度主要是通过改变薄膜中缺陷种类及浓度而影响着ZnO薄膜的发光特性的.     

ZnO薄膜的电沉积制备及其荧光特性研究

以Zn(NO3)2水溶液为电解液,用阴极电沉积法分别在透明导电玻璃ITO和FTO衬底上制备了ZnO薄膜.X射线衍射(XRD)和扫描电子显微镜(SEM)分析结果表明ZnO薄膜属六角纤锌矿结构,ZnO颗粒均匀,大小约1μm;在室温光致发光谱(PL)中(激发波长为385和390nm)分别观察到了波长位于439和442nm处的较强的蓝光发射峰.本文讨论了样品蓝光峰的发光机理,并指出蓝光峰与样品中由锌填隙引起的潜施主能级上的电子到价带的跃迁有关.     

Fe的不同掺杂量对ZnO薄膜光致发光的影响

采用射频磁控溅射在玻璃衬底上制备了不同掺杂量的Fe-ZnO薄膜,分析不同掺杂量对薄膜光学性能的影响.利用X射线衍射仪(XRD)和原子力显微镜(AFM)研究Fe-ZnO薄膜的微观结构和形貌结构.Fe-ZnO薄膜光致发光(PL)性质的研究发现,发光峰主要有蓝光发射和绿光发射,蓝光发射主要是由于电子从导带向锌空位形成的浅受主能级上的跃迁;绿光发射是由于电子从氧空位到锌空位的能级跃迁及导带底到氧错位缺陷能级的跃迁.由透射谱和吸收谱分析,Fe-ZnO薄膜在可见光区的平均透过率为66%,掺杂量为2%Fe的薄膜的禁带宽度最接近于ZnO的禁带宽度.     

磁控溅射沉积的Ge/ZnO复合多层膜的光致发光特性研究

采用交替溅射Ge和ZnO靶的方法在Si(100)单晶基片上沉积了Ge/ZnO复合多层膜,并对其在空气中不同温度下进行了快速加热处理.在高温处理中部分Ge成分会被氧化转变成Ge的氧化物,XRD结果表明所制备的薄膜是由ZnO、Ge、GeO和GeO2多晶颗粒组成的复合薄膜,且随着温度的升高晶粒的尺寸加大,结晶度提高.光致发光谱的测量显示,经过高温处理过的Ge/ZnO复合多层膜可以在395nm左右发出强的紫光,随着温度的增加紫峰变尖锐且强度大大提高,并有590nm的黄发光峰出现.紫峰的增强是由于薄膜结晶度提高导致激子复合增加的结果,黄峰是由于Ge颗粒引起的局域态相关的跃迁而产生的.     

丝网印刷纳米ZnO薄膜阴极场致发射的研究

鉴于化学气相沉积生长方法成本高且很难制备出大面积均匀的纳米ZnO薄膜,采用成本低的丝网印刷方法制备了大面积纳米ZnO阴极薄膜.测试研究了分散、热烧结、退火处理对ZnO薄膜的场致发射特性的影响,提出了低成本丝网印刷制备大面积ZnO薄膜阴极热烧结和退火处理的工艺,根据样品的形貌、发射特性和均匀稳定发光的阳极可以判断,最高温度843K的热烧结和823K、10min的退火处理适实用于制作大面积纳米ZnO薄膜场致发射阴极.     

微纳结构ZnO荧光薄膜的电沉积及其物理特性研究

采用阴极电沉积法,以Zn(NO3)2水溶液为电解液,在透明导电玻璃ITO衬底上制备了ZnO薄膜,用X射线衍射仪(XRD)和扫描电子显微镜(SEM)分析了ZnO薄膜的微纳结构和表面形貌.用Fluoromax-P型荧光光谱仪测量了样品的室温光致发光光谱,观察到550hm处的黄绿光发射峰,认为与样品中由导带到氧填隙引起的浅受主能级的电子跃迁有关.对样品进行500℃真空退火,研究了退火前后薄膜的结构及导电性能的变化.结果表明,退火处理使薄膜的均匀性和结晶质量得到改善,导电性明显增强.此外,还观察了薄膜的阴极射线发光.     

Ge/SiO2和Ge/ZnO/SiO2薄膜的磁控溅射制备及电学性能

采用射频磁控溅射方法以石英玻璃为衬底分别沉积制备出了Ge/SiO2和Ge/ZnO/SiO2薄膜。X射线衍射表明薄膜展示了明显的ZnO衍射峰和较弱的Ge衍射峰;傅里叶变换红外光谱曲线证明薄膜均具有各自的特征吸收峰;扫描电镜结果显示薄膜为颗粒状团簇结构,并且加入ZnO中间层可以有效的改善Ge层的质量。同时,对所得薄膜材料的电流-电压性能进行了研究,结果发现,Ge/SiO2薄膜的I-V曲线拟合后为斜线,相当于电阻;ZnO/SiO2薄膜为直线,可以认为是绝缘体;Ge/ZnO/SiO2薄膜在-10～10V之间电流电压呈线性关系,其电阻比Ge/SiO2薄膜小,当电压值超过15V之后,电流急剧增加而迅速使薄膜击穿,薄膜导通。     

氧氩比对磁控溅射ZnO薄膜结构及光致发光性能的影响

采用射频反应磁控溅射法以不同的氧氩比在玻璃衬底上制备了ZnO薄膜,并对薄膜进行了退火处理;利用X射线衍射仪（XRD）和原子力显微镜（AFM）分别对薄膜的物相组成和表面形貌进行了分析,利用荧光分光光度计对ZnO薄膜的室温光致发光（PL）谱进行了测试。结果表明：当氧氩气体积比为7∶5时,所制备的ZnO薄膜晶粒细小均匀,薄膜结晶质量最好;ZnO薄膜具有紫光、蓝光和绿光三个发光峰,随着氧氩比的增加,蓝光的发射强度增强,而紫光和绿光的发射强度先增强后减弱,当氧氩气体积比为7∶5时紫光和绿光的发射强度最强。     

蓝光波段左手材料的化学制备方法

采用双模板辅助化学电沉积法,以聚苯乙烯微球为初级模板,二维ZnO有序多孔薄膜为二级模板,制备了银树枝状结构阵列,研究了沉积电压对ZnO有序多孔薄膜质量和银树枝形貌的影响,实现了蓝光波段的左手效应.可见光透射和平板聚焦实验表明,当沉积电压为0.5V、聚乙二醇-20000浓度为3mmol/L、沉积时间为8min时,所制备的银树枝状结构阵列具有规则的分形结构,可以在蓝光波段480nm处实现左手效应.     

Structural and optical properties of La-doped ZnO films prepared by magnetron sputtering

La-doped ZnO films were prepared by RF magnetron sputtering using different composition powder compacted targets (0, 1, 2, 3 and 5 at.%). All films show a preferred c-axis growth orientation. Furthermore, the (002) diffraction peak shifts to a small angle and the full-width at half-maximum augments with increasing La concentration up to 2 at.%, which indicate that a small quantity of La atoms are incorporated into the ZnO lattice. The average transmittance in the visible range is over 80%, and a blue shift of the absorption edge is observed. With increasing La concentration, the band gap of ZnO films evaluated by the linear fitting linearly increases from 3.270 to 3.326 eV. In the photoluminescence spectra, a strong violet emission peak and a weak green emission band can be observed. The former is due to the electron transition between the defect energy levels, associated with the interfacial traps existing at the ZnO grain boundaries, and valence band. The latter could be ascribed to crystal defects related to oxygen vacancies.     

Plasmon assisted intense blue-green emission from ZnO/ZnS nanocrystallites

Excellent luminescence properties of ZnO/ZnS nanocrystallites prepared using simple wet chemical approach at room temperature have been reported. ZnS coating on the surface of ZnO nanocrystallites enhanced the green emission (around 500 nm) by a factor of 2. The intensity of the blue emission around 450 nm of ZnO/ZnS nanocrystallites is observed to be as high as three times the emission intensity of pure ZnO nanocrystallites. A further overall increase by a factor of ∼2.5 has also been observed in the intensity of wide blue-green emission when the sample was prepared onto grating compared to that of the samples prepared onto uncoated as well as gold coated quartz. The enhanced emission is thought to be due to plasmon assisted electromagnetic field enhancement near nanocrystallites-metal interface. This is supported by power dependent photoluminescence measurements. The strong enhanced blue-green emission covering a wide spectral range of ∼375-650 nm signifies potential optoelectronic applications in near UV and VIS wavelength regimes.     

热处理温度对溶胶-凝胶法制备ZnO薄膜晶体结构和发光特性的影响

采用溶胶-凝胶(Sol-Gel)旋涂法在Si(100)衬底上制备ZnO薄膜,利用X射线衍射(XRD)、光致发光谱(PL)、扫描电子显微镜(SEM)等手段分析制得的ZnO薄膜的晶体结构和发光特性。着重考察了热分解温度对ZnO薄膜晶体结构和发光特性的影响。结果表明,溶胶-凝胶旋涂法制备的ZnO薄膜样品厚度约为220nm,属六方纤锌矿结构,其c轴取向度与热分解温度有很大关系;ZnO薄膜在室温下均有较强的紫外带边发射峰,且紫外带边发射峰与样品c轴取向度没有直接关系,与缺陷有关的可见发射带很弱。     

Phase transition and optical properties of Ge doped ZnO films synthesised by sputtering

Ge doped ZnO films were deposited on Si substrates by sputtering technique. With the increasing annealing temperature, the crystal quality of samples becomes gradually better and the phase transition can be observed at annealing temperature of 600°C. X-ray photoelectron spectroscopy results show the incorporation of Ge into the ZnO films with 14·81 at-%Ge content. Fourier transform infrared spectroscopy absorption spectra of samples annealed at above 600°C display vibration mode of ν (ZnO₄) and ν (GeO₄) in Zn₂GeO₄. The enhancement of ultraviolet emission intensity should be attributed to the yielded mass holes caused by Ge doping and the rising crystal quality. The sample annealed at 800°C displays the strongest blue emission due to the native defects in Zn₂GeO₄ films or/and surface defects.     

Tunable visible emission and warm white photoluminescence of lithium-doped zinc oxide thin films

Visible emission of Li-doped ZnO (LZO) thin films prepared by a sol–gel method has been tuned in a wide range from blue-green to yellow. Blue-green, yellow, and warm white emissions are observed as 5.0 at.% LZO thin films are annealed in N₂, air, and He, respectively. A strong dependence of the defect emission of LZO on annealing atmosphere suggests that the visible emissions of LZO are related to intrinsic defects rather than lithium impurities.     

Mg-Al共掺杂ZnO薄膜的制备及其光学特性

采用溶胶-凝胶（sol—gel）旋涂法在载玻片上制备了不同A1掺杂量的Mg—Al共掺杂ZnO薄膜．在室温下利用X射线衍射仪（XRD）、扫描电子显微镜（SEM）和光致发光（PL）谱仪等手段分析了Mg—Al共掺杂Zn0薄膜的微结构、形貌和发光特性．XRD结果表明Mg．AI＆掺杂zn0薄膜具有六角纤锌矿结构;随着Al掺杂量的增加,共掺杂薄膜呈C轴取向生长．由SEM照片可知薄膜表面形貌随Al掺杂量的增加由颗粒状结构向纳米棒状结构转变．透射光谱表明共掺杂薄膜在可见光区内的透射率大于50％,紫外吸收边发生蓝移．在室温下的PL谱表明Mg—Al共掺杂zn0薄膜的紫外发射峰向短波长方向移动：Al掺杂摩尔分数为1％和3％的Mg—Al共掺杂ZnO薄膜的可见发射峰分别为596nm的黄光和565nm的绿光．黄光主要与氧间隙有关,而绿光主要与氧空位有关．     

Blue-shifted stimulated emission from ZnO films deposited on SiO2 by atomic layer deposition

ZnO films were prepared by atomic layer deposition upon a SiO₂ layer on a Si substrate and treated by rapid thermal annealing. The optically-pumped random lasing actions with low threshold values were observed in the ZnO films on SiO₂/Si substrates. With the decrease in ZnO film thickness or the increase in post-annealing duration, the stimulated emission shifted toward the shorter wavelength and the lasing threshold increased. The results can be attributed to the inter-diffusion between ZnO and SiO₂, which causes the modification of bandgap renormalization in ZnO.     

Size-induced variations in lattice dimension, photoluminescence, and photocatalytic activity of ZnO nanorods

Highly crystalline ZnO nanorods with diameters ranging from 5 to 57 nm were prepared by a seed-mediated solution method. With a diameter reduction, the lattice volume of ZnO nanorods increased and c/a ratio decreased, in apparent contradiction to what was observed in spherical ZnO nanocrystals. All ZnO nanorods showed a strong yellow emission without the UV or green emissions that had been observed for ZnO nanostructures prepared by other methods. For larger diameters, the yellow emission exhibited an abnormal red shift, which was associated with the lattice variations in the nanoscale structure and the resulting band modifications. The size-induced band modifications were also confirmed by the photocatalytic activity of ZnO nanorods, which have an optimum diameter (approximately 30 nm) for the photodegradation of Rhodamine B dye solution.