波导隔离器用Ce：YIG磁光薄膜的制备

波导隔离器用Ｃｅ：ＹＩＧ磁光薄膜可由溅射外延或溅射沉积后热处理结晶化两种方法制备。控计了制备过程中不同工艺条件对薄膜结晶性能及磁光特性的影响．     

非晶SmDyFeCoTi薄膜的磁和磁光特性

用射频磁控溅射法制备了一系列的（ＳｍＤｙＦｅＣｏ）１－ｘＴｉｘ薄膜,研究了Ｔｉ对非晶ＳｍＤＦｅＣｏ磁光薄膜磁、磁光特怀及其热稳定性的影响,结果表明,少量的Ｔｉ原子掺杂对非晶ＳｍＤｙＦｅＣｏ薄膜的磁和磁光特性影响小,但提高了它的磁和磁光特性的热稳定性。     

溅射氩气压对TbFeCo薄膜磁和磁光性能的影响

研究了射频磁控溅射氩气压的变化对TbFeCo薄膜的磁和磁光特征的影响，以及不同溅射氩气压下TbFeCo薄膜退火后的特性，溅射氩气压的变化通过改变表面状态影响TbFeCo薄膜矫顽力和克尔角，另外，溅射氩气压的变化会影响被溅射原子轰击薄膜的速度，从而影响TbFeCo薄膜的垂直磁各向异性，矫顽力，磁光点尔效应。     

磁控溅射镍膜及其性能的研究

采用磁控溅射法在聚对苯二甲酸乙二醇酯(PET)基材上制备了镍薄膜。用扫描电子显微镜(SEM)分析溅射功率、溅射真空室气压等工艺参数对镍薄膜表面形貌的影响;研究了溅射工艺参数与薄膜性能之间的关系。实验结果表明,在室温下,随着溅射气压的增加,沉积速率和粒径都是先增加后又逐渐变小,而薄膜的电阻则随着压强的增大先减小后逐步增大;薄膜的表面粗糙度随着溅射功率的增加而增大;膜层与基材的剥离强度较大且均匀,膜层结合较为牢固,薄膜的耐摩擦性能较为优良。     

改进0Cr13Ni5Mo钢热弯成型工艺参数的探讨

本选择了水轮机叶片常用材料０Ｃｒ１３Ｎｉ５Ｍｏ钢为研究对象,利用热模拟方法,研究了改进现有热模压工艺参数的可能性。     

汽轮机隔板真空电子束焊工艺试验研究

着重介绍汽轮机隔板材料１５Ｃｒ２Ｍｏ１，Ｃｒ１１ＭｏＶ可焊性试验及其试焊件的变形规律；还阐述了各工艺因素对焊接质量的影响；提出了控制焊接质量及工艺参数选择的原则，为该项技术在生产中的推广应用积累了经验，提供了依据。     

高性能泡沫镍电极的研究

研究了ＨＰＭＣ、ＣｏＯ,ＺｎＯ含量对泡沫镍电极性能的影响。结果表明,在镍正极中加入ＣｏＯ可以大幅度提高Ｎｉ－（ＯＨ）２利甲率,但电极只含ＣｏＯ不能有效抑制膨胀,同时添加ＣｏＯ、ＺｎＯ可以大幅度提高电极寿命。此外,少量ＺｎＯ的加入对Ｎｉ（ＯＨ）２利用率影响较小。在本论文的实领条件下,制造高性能泡沫镍电极的合适工艺为：ＨＰＭＣ、ＣｏＯ、ＺｎＯ掺入量分别为０．５％、９％、４．５％。制尾的ＭＨ－Ｎｉ电池的容量在１３００ｍＡｈ以上,１Ｃ循环寿命在３００次以上,０．２Ｃ放电１．２Ｖ以上时间占总的８０％以上,１Ｃ放电１．２Ｖ以上时间占总的６０％以上。     

溶液氯离子浓度和PH值对材料点蚀电位影响的研究

本文研究了溶液氯离子浓度和ＰＨ值对马氏体不锈钢点蚀电位的影响，研究结果表明热处理工艺对材料的点蚀电位有较大的影响；１Ｃｒ１２Ｎｉ２Ｗ１Ｍｏ１Ｖ钢调质态和高频淬火态试样的点蚀电位随溶液氯离子浓度的增大而降低，材料的点蚀电位Ｅｂ与氯离子浓度ＬｏｇＣｃｌ－有较好的线性关系；对于同一氯离子浓度的溶液，溶液ＰＨ值对该材料的点蚀电位的影响不大。     

射频磁控溅射沉积铝掺杂氧化锌薄膜的研究

采用射频磁控溅射法沉积铝掺杂氧化锌(Zn O∶Al,简称AZO)薄膜,研究了本底压强、溅射功率以及沉积时间对AZO薄膜光电性质的影响,优化了该层薄膜的沉积工艺。研究结果表明,在尽可能低的本底压强下,采用适中的溅射功率(500 W),制备出厚度约为500 nm的AZO薄膜,其电阻率达到5×10-4Ω·cm,可见光范围内的平均透过率达到82.7%。     

Co掺杂对纳米TiO_2薄膜磁电阻特性的影响

为了研究复合纳米TiO_2材料的磁电阻特性,通过磁控溅射方法和原位退火工艺制备了Co掺杂TiO_2薄膜样品。利用X射线衍射仪和扫描探针显微镜观测薄膜样品的微结构特征,利用振动样品磁强计和多功能物理性质测量系统测试样品的磁特性和磁电阻。结果表明,Co掺杂量对TiO_2薄膜的磁电阻特性有重要影响:磁性金属含量较高的薄膜样品出现较大的磁电阻,磁电阻峰值为-14%,峰值温度为250K;磁性金属含量较低薄膜样品具有较小的磁电阻值;由于Co掺杂影响了薄膜的微结构和导电性,导致出现了特殊的磁电阻效应。     

Giant magnetoresistance and magnetic anisotropy of Co9Fe/Cu/Co9Fe multilayer thin films on an MgO(110) substrate

Magnetoresistive effects have been investigated using Co₉Fe/Cu/Co₉Fe that were deposited on an MgO(110) substrate by ion beam sputtering with a 21-A-thick CU layer and with various thicknesses of the Co₉Fe films. The influence of a 50-A-thick Fe buffer layer has also been investigated. In addition to a cubic symmetry anisotropy (K₁), an in-plane uniaxial magnetic anisotropy (K_u) was induced, which easy axis is parallel to the (110) plane of the MgO substrate and the (001) plane with and without the 50-A-thick Fe buffer layer, respectively. The magnetoresistance (MR) ratio decreased monotonically with increasing thickness of the Co₉Fe films from 25 A to 70 A. A maximum MR ratio of 11.5 percent was obtained at room temperature. With increasing magnetic field, the MR ratio reached a plateau gradually after a steep drop at small magnetic fields without the Fe buffer layer. It reached a plateau rapidly at small magnetic fields with the Fe buffer layer. By considering both K_u and K₁, these behaviors can be accounted for by the magnetization processes involved.     

Fe/In2O3/Fe多层膜的磁性及巨磁电阻效应

采用射频溅射方法成功制备了由过渡族元素Fe和半导体材料In2O3交替生长构成的Fe/In2O3/Fe多层膜、室温下，磁性测量结果表明样品具有超顺磁性，符合朗之万方程；磁电阻比的最大值为2.93%，遵从颗粒膜磁电阻的平方律。上述实验结果表明该多层膜样品具有类似于颗粒膜的结构。     

(FeCo/CoNbZr)n多层软磁薄膜的结构与磁性能

利用磁控溅射制备纳米晶单轴各向异性(FeCo/CoNbZr)n多层软磁薄膜,通过CoNbZr层的加入来细化FeCo颗粒。这种组合而成的多层膜矫顽力低,单轴各向异性明显,各向异性等效场Hk高,热稳定性优良,非常适合应用于超高密度磁记录头。     

Li:(Ni+Co+Mn)对Lix Ni1/3Co1/3Mn1/3O2性能的影响

以共沉淀氢氧化物为前驱体制备了层状LixNi1/3Co1/3Mn1/3O2(x＞1)正极材料,并采用X射线衍射光谱法(XRD)、扫描电子显微镜(SEM)、充放电测试表征了其结构与性能.研究了不同的Li与M摩尔比对材料性能的影响.结果表明:随着Li与M摩尔比的升高,样品显示电化学性能提高,尤其是循环性能和倍率性能.当Li与M摩尔比大于1.20时放电容量开始下降.Li与M摩尔比为1.20的试样在截止电压为2.75～4.4 V范围里首次放电比容量达到160.5 mAh/g.     

Synthesis and characterization of indium tin oxide (ITO) nanoparticle using gas evaporation process

In this paper, indium tin oxide (ITO) nanoparticle was synthesized by gas evaporation process, and its physical properties such as particle size, specific surface area, crystal structure, and composition ratio according to the heat-treating conditions were investigated to optimize them. The source material was charged in a chamber with vacuum circumstance of 1×10⁻⁵ torr, and the oxygen gas was supplied during evaporation. The In_xO_ySnO_z nanoparticle was synthesized, and the nanoparticle was heat-treated to have optimal point of particle size, crystal structure, and composition, etc. The synthesized nanoparticle was heat-treated with controlling such parameters as heat-treating temperature and environmental gas. Particle size, specific surface area, crystal structure, and concentration ratio of the synthesized ITO nanoparticle by using the method were analyzed with high resolution transmission electron microscopy (HRTEM), BET surface area analyzer, X-ray diffraction (XRD), and energy dispersion spectroscopy (EDS). As a result, in case of ITO nanoparticle synthesized at 300^∘C, its mean particle size is 5 nm and the surface area exceeds 100 m²/g. The XRD analysis indicates that the crystal structure of the particle is cubic one with orientation of (222), (400), (440). Also, the EDS analysis demonstrates that the concentration ratio of indium and tin is 91 at% and 9 at% in the lattice of the ITO nanoparticle. Since the lower sized ITO nanoparticle produces the ITO sputtering target with higher density and the ITO sputtering target with higher density makes the high quality ITO electrode, the synthetic condition of 300^∘C is considered to be optimal condition for enhancing the high quality ITO electrode.     

湿法球磨制备LiCo_(1/3)Mn_(1/3)Ni_(1/3)O_2材料及表征

以六水合硝酸镍、硝酸钴和二氧化锰为原料,以柠檬酸为分散剂和燃料,采用球磨工艺对原料进行混合,在950℃于空气气氛中保温10 h制备了层状结构的LiCo_(1/3)Mn_(1/3)Ni_(1/3)O_2正极材料.通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)和电化学性能测试手段对所制备材料的结构、形貌及电化学性能进行表征.结果表明:所合成的材料为单相的六方层状结构,颗粒大小均匀.在2.75～4.3 V电压区间,以0.1 C恒电流充放电,首次充/放电比容量为184.3/156.7mAh/g,充/放电效率为85%.0.5 C倍率下充放电,材料首次放电比容量为151.3 mAh/g,经过30次循环后比容量保持在1 50.8 mAh/g左右,循环性能优异.     

MH-Ni电池用b-Ni(OH)_2的表征和综合评价

介绍了表征MH-Ni电池用β-Ni(OH)2的X射线衍射(XRD)方法。利用这些方法测试和分析不同来源的β-Ni(OH)2样品。结果表明:不同制备方法和不同工艺所得β-Ni(OH)2的晶粒形状、大小和层错几率明显不同;初始β-Ni(OH)2的微结构参数与充放电性能有一定的对应关系;初始β-Ni(OH)2的微结构参数在充放电过程以及循环过程都发生变化,这种变化的进程还受充放电条件和循环条件的影响。阐明了综合评价β-Ni(OH)2的必要性和重要性,最后提出综合评价β-Ni(OH)2的宏观参数和微观参数。     

(Zr/Ti) ratio effect on RF magnetron sputtered lead titanate zirconate films

Abstract

Sputtered Pb(Zr_xTi_1?x)O₃ thin films with various (Zr/Ti) compositions ranging from 15/85 to 70/30 were grown and characterised in terms of structural and electrical properties. PZT thin films, with 0.7–0.8μm thickness, were deposited on Si/SiO₂/Ti/Pt by sputtering followed by conventional annealing. The sputtering conditions were the same for all the compositions. There were no apparent differences in crystallographic orientation as a function of Zr/Ti and the films a-lattice constant evolution is not exactly identical to the one of bulk ceramics. The permittivity increases when the Zr concentration increases and decreases just after the mor-photropic composition i.e. Zr-rich films. The ferroelectric properties are very sensitive to the Zr/Ti ratio. For example, the coercive field increases when the Ti concentration in the film increases.     

不同方法合成的LiMn_(1.9)Al_(0.05)Mg_(0.05)O_(3.9)F_(0.1)的性能

比较了硝酸盐-氨基乙酸燃烧(GNC)法和溶胶-凝胶(SG)法合成的锂离子电池电极材料Li Mn1.9Al0.05Mg0.05O3.9F0.1的电化学性能。不同的合成方法,导致材料的晶相结构、形貌、比表面积及电化学性能上的差异。与SG法相比,GNC法合成的样品电化学性能更好,在25℃、55℃时,第20次循环的容量保持率分别为98.1%、93.1%。     

Measurement of Microwave Dielectric Properties of (Sr,Ba)Nb2O6 Thin Films

(001) oriented (Sr,Ba)Nb₂O₆ (SBN) thin films were deposited on MgO (001) single crystal substrates by the pulsed laser deposition method. Structural properties of SBN films were investigated using X-ray diffractometer. The microwave dielectric properties of SBN films were examined by calculating the scattering parameter obtained using a HP 8510C vector network analyzer with the frequency range 0.5–20 GHz at room temperature under the dc bias field of 0–80 kV/cm for interdigital capacitors (IDT) and coplanar waveguide (CPW) device based on SBN/MgO layer structure. Thick metal electrode patterns were fabricated by dc sputtering deposition, photolithography and etching process. The IDT device based on (001) oriented SBN films exhibited about 40% capacitance tunability with an electric field change of 80 kV/cm at room temperature, and the dielectric quality factor was about 20 at 12 GHz with no dc bias.