La_2O_3掺杂(Bi_(0.5)Na_(0.5))_(0.94)Ba_(0.06)TiO_3陶瓷的介电和压电性能的研究

用固相反应法制备La2O3掺杂的铁电陶瓷(Bi0.5Na0.5)0.94Ba0.06TiO3(BNBT6)。X射线衍射曲线表明掺杂0-0.6wt%La2O3的BNBT6为钙钛结构。研究了La2O3掺杂对BNBT6陶瓷介电性能和压电性能的影响。结果表明La2O3掺杂量为0.3wt%的BNBT6陶瓷综合性能最佳,其中介电常数为1981.4,介电损耗为0.0625和压电常数为145pc/N。SEM图象表明La2O3掺杂提高了陶瓷的致密度。     

(1-x)Bi0.5(Na0.8K0.2)0.5TiO3-xKSbO3压电陶瓷的制备及性能研究

采用传统固相法制备了新型(1-x)Bi0.5(Na0.8K0.2)0.5Ti O3-xKSbO3无铅压电陶瓷,利用XRD、SEM等测试技术表征了该陶瓷的晶体结构、表面形貌、压电和介电性能。研究结果表明,在所研究的组成范围内陶瓷材料均能形成纯的钙钛矿固溶体。在室温下,当KSb O3的掺杂量为1%时,该体系表现出较好的介电性能:εr和tanδ分别为2 231和0.055。     

掺杂Co2O3对Na0．5Bi0.5TiO3基压电陶瓷性能的影响

通过固相法合成Na0.5Bi0.5TiO3+xmol%Co3+(简写为:NBT-xC)体系无铅压电陶瓷,并对其相结构、压电、介电及铁电性能进行了研究.XRD分析结果表明,所有组成均形成三方钙钛矿结构.SEM扫描电镜照片显示Co2O3的引入有利于晶粒长大,提高致密度.随着Co含量的增加,陶瓷的压电常数d33,机电耦合系数Kp都略有下降,机械品质因素Qm有明显提高,在x=3时达到极大值:0m-934,同时介电损耗出现极小值:tgδ=0.02(1kHz),综合得出Co离子起"硬性掺杂"作用.     

铜掺杂对(Na0.5K0.5)NbO3无铅压电陶瓷性能的影响

采用传统固相反应法对(Na0.5K0.5)NbO3压电陶瓷进行铜掺杂改性研究。使用SEM、XRD并结合常规压电陶瓷性能测试手段对该体系的显微结构、压电性能等进行表征。研究结果表明:CuO的掺入使材料出现“硬化”现象,即材料的压电系数d33、平面机电耦合系数Kp和介电损耗tanδ下降了,机械品质因子Qm大大提高;CuO掺入量在1%mol时各项性能最佳。另外,从SEM图片中可以看出:(Na0.5K0.5)NbO3压电陶瓷材料的平均晶粒尺寸随着CuO掺入量的增加明显变大。这表明CuO有烧结助熔作用,能降低烧成温度。     

(1-x)Na0.5Bi4.5Ti4O15-xBaTiO3高温铋层状陶瓷的结构与性能研究

采用固相法制备(1-x) N0.5Bi4.5Ti4O15-xBaTiO3 (NBT-BT,x=0,0.05,0.10,0.20,0.30,0.40)高温铋层状压电陶瓷材料.用X射线衍射(XRD)、SEM扫描电镜(SEM),介电和阻抗温谱等测试方法研究了BaTiO3掺杂量对Na0.5Bi4.5Ti4O15陶瓷晶体结构和电...     

La~(3+)掺杂钛酸铋钠基无铅陶瓷的压电性能与介电弛豫行为

采用冷等静压成型和密闭烧结工艺,制备了具有微晶结构的稀土离子La3+掺杂0.9TNa0.5Bi0.5TiO3-0.03K0.5Na0.5NbO3基无铅压电陶瓷体系.研究了该体系陶瓷的相结构,显微结构与介电、压电性能.结果表明:在掺杂范围内(0.015≤x≤0.105),La3+可完全固溶进陶瓷晶格形成单一的钙钛矿相.采用等静压成型工艺可明显改善陶瓷的显微结构,使晶粒细化,进而提高材料的压电性能.该陶瓷具有弥散相变和频率色散特征,为典型的弛豫型铁电体.随着La3+掺杂量的增加,材料的铁电-反铁电相变温度下降,Curie温度提高,相对介电常数、介电损耗和压电常数逐渐减小,弛豫特征愈明显.     

(1-x)Li0.05(K0.5Na0.5)0.95NbO3-x(Bi0.5Na0.5)TiO3无铅压电陶瓷的结构与电性能研究

采用固相反应法制备了(1-x)Li0.05(K0.5Na0.5)0.95NbO3-x(Bi0.5Na0.5)TiO3(LKNN-BNT)无铅压电陶瓷,研究了BNT的添加量x(0,0.005,0.01,0.02)对LKNN-BNT陶瓷的结构与电性能影响。X射线衍射(XRD)分析结果表明当x≤0.005时,陶瓷为正交钙钛矿结构,而当x≥0.01时,陶瓷则转变为四方钙钛矿结构,说明该陶瓷的多型相转变(PPT)区域为0.005相似文献   

Ba(Zr_(0.055)Ti_(0.945))O_3含量对[(Na_(0.80)K_(0.16)Li_(0.04))_(0.5)Bi_(0.5)]TiO_3陶瓷性能的影响

系统研究(1-y)[(Na0.80K0.16Li0.04)0.5Bi0.5]TiO3-yBa(Zr0.055Ti0.945)O3无铅压电陶瓷,获得压电应变常数高达185pC/N的0.94[(Na0.80K0.16Li0.04)0.5Bi0.5]-TiO3-0.06Ba(Zr0.055Ti0.945)O3压电陶瓷。样品的晶体结构为三方相、四方相共存,处于准同型相界(morphotropic phase boundary,MPB)附近。该类陶瓷室温MPB的摩尔(下同)含量为0.050y0.065。样品y=0.060在40°左右的(003)、(021)双峰与46.5°左右的(002)、(200)双峰分裂最明显。随着Ba(Zr0.055Ti0.945)O3含量的增加,铁电相-反铁电相相变温度(θd)升高、反铁电相-顺电相相变温度(θm)降低;θd和θm的温差越来越小,材料的弛豫性逐渐降低。     

W6+掺杂对Na0.5Bi2.5Ta2O9陶瓷的结构与电学性能影响

采用传统固相法制备Na0.5Bi2.5Ta2-xWxO9 (NBTO-x,0≤x≤0.05)无铅压电陶瓷,研究W6+掺杂对NBTO陶瓷结构和电学性能的影响.XRD结果显示,所有陶瓷样品均生成了m=2的铋层状结构化合物,随着掺杂量的增加,样品的正交畸变先减小后增大;W6+掺杂提高了样品的压电与铁电性能,当x=0.03时,...     

0.995Bi0.5(Na0.8K0.2)0.5TiO3-0.005(LiyK1-y)SbO3压电陶瓷的制备及性能研究

采用传统固相法制备了新型0.995Bi0.5(Na0.8K0.2)0.5TiO3-0.005(Li y K1-y)SbO3无铅压电陶瓷,利用XRD、SEM等测试技术表征了该陶瓷的晶体结构、表面形貌、压电和介电性能。研究结果表明,在所研究的组成范围内陶瓷材料均能形成纯的钙钛矿固溶体。压电性能随y的增加先增加后减少,在y=10%时压电常数及机电耦合系数达到最大值(d33=111 pC/N,k p=0.220)。     

Bi_(0.5)K_(0.5)TiO_3掺杂对0.945K_(0.5)Na_(0.5)NbO_3-0.045LiSbO_3无铅压电陶瓷结构性能的影响

采用传统固相合成法合成(1-x)(0.945K0.5Na0.5NbO3-0.045LiSbO3)-x(Bi0.5K0.5TiO3)(简记为(KNN-LS)(1-x)-BKTx))无铅压电陶瓷,研究不同BKT掺入量(x=0.000,0.005,0.010,0.015,0.020,0.025,0.030)对该体系陶瓷的微观结构和压电介电性能。结果表明:x≤0.025时,均可形成单一钙钛矿结构;与KNN-LS相比,体积密度(ρ)、机械耦合系数kp、kt显著提高;d33、介电损耗tanδ、机械品质因数Qm和次级相变温度降低;当x=0.020时,样品的整体性能达到最佳值:ρ=4.239g/cm3,d33=94pC/N,kp=30.9%,kt=20.7%,tanδ=0.024,相对介电常数εT33/ε0=2468,Qm=53.95,次级相变温度降至室温以下,温度稳定性好。     

Cu掺杂对(K_(0.5)Na_(0.5))NbO_3-(Bi_(0.5)Na_(0.5))TiO_3-LiSbO_3-NaTaO_3系压电陶瓷结构及性能的影响

采用传统的陶瓷工艺制备了0.94[0.9405(K0.5Na0.5)NbO3-0.0095(Bi0.5Na0.5)TiO3-0.05LiSbO3]-0.06NaTaO3(简称KNN-BNT-LS-NT)+xmol%CuO(0≤x≤2.0)陶瓷,研究了其晶体结构、压电、介电以及铁电性质,并对Cu2+在A、B位取代做了详细的分析讨论。结果表明,Cu2+的加入能显著提高陶瓷的机械品质因数Qm和降低其介电损耗tanδ,当加入1.5mol%的Cu2+在时,取得较佳的性能,即d33=183pC/N、Qm=166、tanδ=0.0135。     

BiFeO_3-K_(0.5)Na_(0.5)NbO_3无铅压电陶瓷的烧结工艺

采用传统固相烧结法制备性能良好的铁酸铋(BiFeO3,BF)掺杂的铌酸钾钠(K0.5Na0.5NbO3,KNN)压电陶瓷(BF-KNN),着重研究BF摩尔(下同)掺量对KNN结构与压电性能的影响规律以及BF-KNN陶瓷的烧结工艺。结果表明:适量BF有利于提高BF-KNN的压电性能,当BF掺量≥1%后,压电性能急剧降低。与仅烧结一次的样品相比,二次烧结BF-KNN陶瓷形成更加稳定的正交晶系钙钛矿结构,陶瓷组织致密,压电性能大幅度提高,压电常数(d33)、平面机电耦合系数(kp)与机械品质因数(Qm)分别达134pC/N、46%和364,但介电性能明显降低,相对介电常数(εr)从退火前的554降至388。一次、二次烧结样品的体积密度分别为4.12g/cm3和4.36g/cm3,相对密度分别为91.35%和96.67%。在温度低于490℃、频率为100kHz时,二次烧结样品的介电损耗tanδ5%,其Curie温度高达420℃。     

Enhanced photodielectric effect in (0.88–x)Bi0.5Na0.5TiO3–0.12BaTiO3 –xBa(Ti0.5Ni0.5)O3–δ (BNBTNO) ceramics

In this work, solid solutions of (0.88–x)Bi_0.5Na_0.5TiO₃–0.12BaTiO₃– xBa(Ti_0.5Ni_0.5)O_3–δ were designed and prepared. These compositions exhibit ferroelectricity at room temperature, with the tetragonal symmetry. The c/a values are varied from ～1.0067 (x?=?0.1) to ～1.0208 (x?=?0.04). A transition from the high–temperature relaxor state to the low–temperature ferroelectric state is demonstrated by the temperature dependence of dielectric data and Raman spectrum. The direct bandgap decreases from 3.40?eV for x?=?0 to 3.16?eV for x?=?0.1. The Ba(Ti_0.5Ni_0.5)O_3–δ addition leads an additional optical absorption peak in the visible range. The obvious photodielectric effect was discovered. In particular, the relative permittivity of the x?=?0.1 composition rises from ～756 to ～807 under light illumination.     

Tuning of electrical properties of xBi(Zn0.5Ti0.5)O3-(1-x) (Ba0.5Sr0.5)TiO3 ceramics by composition design and bandgap engineering

Herein, the xBi(Zn_0.5Ti_0.5)O₃-(1-x) (Ba_0.5Sr_0.5)TiO₃ (x = 0.05, 0.10, 0.15, 0.20) novel negative temperature coefficient (NTC) ceramic materials were fabricated by solid-state method. X-ray diffraction revealed that xBi(Zn_0·5Ti_0.5)O₃-(1-x) (Ba_0.5Sr_0.5)TiO₃ successfully formed solid solution. The UV–vis diffuse spectra of the samples indicate that the band gap increases with the increasing Bi(Zn_0·5Ti_0.5)O₃ content. The resistance temperature curve showed that with the increase of Bi(Zn_0·5Ti_0.5)O₃ content, the resistivity ρ of the ceramics at 400 °C increased from 5.96 × 10⁶ to 2.67 × 10⁷ Ω cm, as well as an increase in the B_400/800 from 12374.6 to 13469.1 K. The enhanced resistivity is attributed to the increased band gap and reduced carrier pairs caused by the Bi(Zn_0.5Ti_0.5)O₃ modification. The impedance data indicates that the conduction process is activated by thermal. The ceramic samples exhibit the excellent NTC characteristics over a range of 400 °C–1000 °C. Hence, the xBi(Zn_0.5Ti_0.5)O₃-(1-x) (Ba_0.5Sr_0.5)TiO₃ ceramics have the potential to become high temperature NTC ceramics that can operate in a wide temperature range.     

(Bi_(0.5)Na_(0.5))TiO_3-BaTiO_3系陶瓷的介电弛豫性能

采用传统压电陶瓷固相合成法制得了纯钙钛矿相的( 1 -x) (Bi0 5Na0 5 )TiO3 -xBaTiO3 (x=0 02, 0 04,0 06, 0 08, 0 10) (简写作BNBT)系无铅压电陶瓷。研究了1kHz条件下室温到400℃的温度范围内BNBT试样的介电温谱以及3种不同频率下(1、10、100kHz)BNBT-6试样的介电温谱,发现材料在研究组成范围内均为弛豫型铁电体。采用HRTEM研究了该系统的畴结构,表明BNBT钙钛矿结构铁电体的介电性能与复合离子的有序无序排列密切相关,纳米尺度有序微畴对介电弛豫起着重要作用。     

Large Piezoresponse and Ferroelectric Properties of (Bi0.5Na0.5)TiO3–(Bi0.5K0.5)TiO3–Bi(Mg0.5Ti0.5)O3 Thin Films Prepared by Chemical Solution Deposition

Bulk ceramic 72.5 mol%(Bi_0.5Na_0.5)TiO₃–22.5 mol%(Bi_0.5K_0.5)TiO₃–5 mol%Bi(Mg_0.5Ti_0.5)O₃ (BNT–BKT–BMgT) has previously been reported to show a large high‐field piezoelectric coefficient (d₃₃* = 570 pm/V). In this work, the same composition was synthesized in thin film embodiments on platinized silicon substrates via chemical solution deposition. Overdoping of volatile cations in the precursor solutions was necessary to achieve phase‐pure perovskite. An annealing temperature of 700°C resulted in good ferroelectric properties (P_max = 52 μC/cm² and P_r = 12 μC/cm²). Quantitative compositional analysis of films annealed at 650°C and 700°C indicated that near ideal atomic ratios were achieved. Compositional fluctuations observed through the film thickness were in good agreement with the existence of voids formed between successive spin‐cast layers, as observed with electron microscopy. Bipolar and unipolar strain measurements were performed via double laser beam interferometry and a high effective piezoelectric coefficient (d_33,f) of approximately 75 pm/V was obtained.     

Enhanced pyroelectric response from domain-engineered lead-free (K0.5Bi0.5TiO3-BaTiO3)-Na0.5Bi0.5TiO3 ferroelectric ceramics

Enhanced pyroelectric response is achieved via domain engineering from [001] grain-oriented, tetragonal-phase, lead-free 0.2(2/3K_0.5Bi_0.5TiO₃-1/3BaTiO₃)-0.8Na_0.5Bi_0.5TiO₃ (KBT-BT-NBT) ceramics prepared by a templated grain growth method. The [001] crystallographic orientation leads to large polarization in tetragonal symmetry; therefore, texturing along this direction is employed to enhance the pyroelectricity. X-ray diffraction analysis revealed a Lotgering factor (degree of texturing) of 93 % along the [001] crystallographic direction. The textured KBT-BT-NBT lead-free ceramics showed comparable pyroelectric figures of merit to those of lead-based ferroelectric materials at room temperature (RT). In addition to the enhanced pyroelectric response at RT, an enormous enhancement in the pyroelectric response (from 1750 to 90,900 μC m^?2 K^?1) was achieved at the depolarization temperature because of the sharp ferroelectric to antiferroelectric phase transition owing to coherent 180° domain switching. These results will motivate the development of a wide range of lead-free pyroelectric devices, such as thermal sensors and infra-red detectors.     

Preparation and characterization of (K0.5Na0.5)NbO3 ceramics

In this paper the preparation and characterization of the ceramic material (K_0.5Na_0.5)NbO₃ (KNN) has been studied. Although conventional processing of KNN is often reported to result in sintered bodies lacking sufficient density, samples produced in this work exhibit theoretical density over 95% and yield superior piezoelectric properties than those obtained by the same method and reported previously. The electromechanical coupling coefficient in the thickness direction, k_t, is found to reach 45%. Apart from k_t, the piezoelectric coefficients in longitudinal and planar directions (d₃₃ of 100pC/N and d₃₁ of 43pC/N), hysteresis loop, pyroelectric coefficient measurements and dielectric properties are presented.     

Low-Temperature Sintering of (K0.5Na0.5)NbO3 Piezoelectric Ceramics

(K_0.5Na_0.5)NbO₃ piezoelectric ceramics can be sintered at a temperature as low as 750 °C for 5 h by incorporating Li₂CO₃ + Bi₂O₃ + ZnO as the sintering aid, whereas the conventional sintering temperature is around 1,100 °C. The optimal “soft” piezoelectric properties are obtained for ceramics sintered at 850 °C for 5 h. The dielectric permittivity (ε), piezoelectric coefficient (d ₃₃), electromechanical coupling (k _p) and mechanical quality factors (Q _m) of (K, Na)NbO₃ modified with 5.5 wt% sintering aids are 1,436, 90 pC/N, 0.3 and 10, respectively. These values are similar to the values obtained for (K_0.5Na_0.5)NbO₃ ceramics sintered above 1,100 °C. The underlying mechanism for abrupt change of dielectric permittivity is explained.