并五苯钝化层增强C60有机场效应晶体管性能的研究

We investigated the properties of C₆₀-based organic field-enect transistors（OFETs）（?） a pentacene passivation layer inserted between the C₆₀ active layer and the gate dielectric.After modification of the pentacene passivation layer,the performance of the devices was considerably improved compared to C₆₀-based OFETs with only a PMMA dielectric.The peak field-effect mobility was up to 1.01 cm²/（V·s） and the on/off ratio shifted to 10⁴.This result indicates that using a pentacene passivation layer is an effective way to improve the performance of N-type OFETs.     

基于沟道及电极修饰的酞菁铜场效应晶体管的性能提高研究

利用对四联苯p -4P 以及五氧化二钒V2O5同时修饰导电沟道及源/漏电极,大幅 提高了基于酞菁铜CuPc场效应晶体管的性能。本文通过在绝缘层SiO2和有源层CuPc 之间插入p-4p缓冲薄层,同时在源/漏电极Al与有机半导体之间引入电极修饰层V2O5, 使得CuPc场效应晶体管的饱和迁移率和电流开/关比分别提高到5×10-2cm2 / V s和 104。p -4P能够诱导p型CuPc形成高度取向的连续薄膜,使得载流子能够在有源层中 更好地传输;而V2O5能够调节载流子的注入势垒,并可有效地降低沟道接触电阻(Rc)。 此方法能够在降低器件制备成本的前提下,大幅提高器件的性能。     

我国研制成功面向3mm波段的InGaAs/InP双异质结双极型晶体管

近日,中国科学院微电子研究所微波器件与集成电路研究室（四室）金智研究员领导的课题组成功研制出面向3mm波段的InGaAs／InP双异质结双极型晶体管。     

基于插入WO3缓冲层并五苯有机场效应晶体管性能的研究

The pentacene-based organic field effect transistor （OFET） with a thin transition metal oxide （WO3） layer between pentacene and metal （AI） source/drain electrodes was fabricated. Compared with conventional OFET with only metal AI source/drain electrodes, the introduction of the WO3 buffer layer leads to the device performance enhancement. The effective field-effect mobility and threshold voltage are improved to 1.90 em2/（V.s） and 13 V, respectively. The performance improvements are attributed to the decrease of the interface energy barrier and the contact resistance. The results indicate that it is an effective approach to improve the OFET performance by using a WO3 buffer layer.     

最高振荡频率为325GHz的InGaAs/InP双异质结双极型晶体管

A common-base four finger InGaAs/InP double heterostructure bipolar transistor（DHBT） has been designed and fabricated using triple mesa structure and planarization technology.All processes are on 3-inch wafers. The area of each emitter finger is 1×15μm².The maximum oscillation frequency(f_max) is 325 GHz and the breakdown voltage BV_CBO is 10.6 V,which are to our knowledge both the highest f_max and BV_cbo ever reported for InGaAs/InP DHBTs in China.The high speed InGaAs/InP DHBT with a high breakdown voltage is promising for submillimeter-wave and THz electronics.     

聚酰亚胺为栅绝缘层的并五苯场效应晶体管

以真空蒸发的有机半导体材料并五苯为有源层,以旋涂的聚酰亚胺作为栅绝缘层,以真空蒸发的Al为栅、源和漏电极,成功制作了顶接触式并五苯有机场效应晶体管(OFET).测试表明,在源漏电压为70 V时,器件的载流子迁移率μ为0.079 cm2/V·s,器件的开关电流比为1.7×104.     

Broad spectral response photosensitive organic field-effect transistors realized by the hybrid planar-bulk heterojunction composed of three molecules with complementary optical absorption

Photodetectors have a growing number of diverse applications in both military and civilian use, and improving their response bandwidth is of great importance. Broad spectral response photosensitive organic field-effect transistors (PhOFETs) are realized by adopting hybrid planar-bulk heterojunction (HPBHJ) as the active structure that containing three molecules with complementary optical absorption. PhOFETs based on the HPBHJ composed of 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA), chloroaluminum phthalocyanine (AlClPc) and C₆₀, and SiO₂ as the gate dielectric exhibit photo response in the broadband wavelength range of 300–850 nm. At an incident optical intensity of 0.07 mW/cm², the mean photoresponsivity and uniformity factor were 0.40 A/W and 0.79, respectively. Furthermore, by replacing SiO₂ gate dielectric with polyvinyl alcohol (PVA), the device performance could be further improved, the mean photoresponsivity was increased to 2.44 A/W. The physical origin of the performance improvement is discussed.     

Mobility enhancement by using silk fibroin in F16CuPc organic thin film transistors

High performance n-type F₁₆CuPc organic thin-film transistors (OTFTs) were fabricated on polyethylene terephthalate (PET) using silk fibroin as the gate dielectric. The average field-effect mobility (μ_FE) value in the saturation regime is 0.39 cm² V⁻¹ s⁻¹ approximately one order of magnitude higher than the reported values in the literature. A typical F₁₆CuPc OTFT exhibits an on/off current ratio of 9.3 × 10², a low threshold voltage of 0.65 V, and a subthreshold swing value of 730 mV/decade. The enhancement of μ_FE results from very good crystal quality of F₁₆CuPc on silk fibroin, supported by grazing incidence X-ray diffraction (GIXD) data.     

Solution‐Processed Ambipolar Field‐Effect Transistor Based on Diketopyrrolopyrrole Functionalized with Benzothiadiazole

Ambipolar charge transport in a solution‐processed small molecule 4,7‐bis{2‐[2,5‐bis(2‐ethylhexyl)‐3‐(5‐hexyl‐2,2′:5′,2″‐terthiophene‐5″‐yl)‐pyrrolo[3,4‐c]pyrrolo‐1,4‐dione‐6‐yl]‐thiophene‐5‐yl}‐2,1,3‐benzothiadiazole (BTDPP2) transistor has been investigated and shows a balanced field‐effect mobility of electrons and holes of up to ～10^?2 cm² V^?1 s^?1. Using low‐work‐function top electrodes such as Ba, the electron injection barrier is largely reduced. The observed ambipolar transport can be enhanced over one order of magnitude compared to devices using Al or Au electrodes. The field‐effect mobility increases upon thermal annealing at 150 °C due to the formation of large crystalline domains, as shown by atomic force microscopy and X‐ray diffraction. Organic inverter circuits based on BTDPP2 ambipolar transistors display a gain of over 25.     

基于MoO3和Re-Bphen修饰有机太阳能电池性能的研究

有机太阳能电池(OSCs)的性能与材料及器件结构密切相关。以MoO3为阳极缓冲层,有机金属配合物Re-Bphen为阴极缓冲层,制备了结构为ITO/MoO3/CuPc/C60/Re-Bphen/Al的OSCs。在标准太阳光照条件下,当MoO3和Re-Bphen的厚分别为5nm和8nm时实现了器件的最佳性能,能量转换效率(PCE)和器件寿命均显著提高。结合器件结构,分析了工作机制。     

Performance comparison of pentacene organic field-effect transistors with SiO2 modified with octyltrichlorosilane or octadecyltrichlorosilane

Performance of pentacene organic field-effect transistors (OFETs) is significantly improved by treatment of SiO₂ with octyltrichlorosilane (OTS-8) compared to octadecyltrichlorosilane (OTS-18). The average hole mobility in these OFETs is increased from 0.4 to 0.8 cm²/Vs when treating the dielectric with OTS-8 versus OTS-18 treated devices. The atomic force microscope (AFM) images show that the OTS-8 treated surface produces much larger grains of pentacene (∼500 nm) compared to OTS-18 (∼100 nm). X-ray diffraction (XRD) results confirmed that the pentacene on OTS-8 is more crystalline compared to the pentacene on OTS-18, resulting in higher hole mobility.     

Improve on/off ratio of organic heterojunction transistors by adopting single-sandwich configuration

Organic heterojunction transistors (OHJTs) based on 5,5′″-bis(naphtha-2-yl)-2,2′:5″,2′″-quaterthiophene (NaT₄)/copper-hexadecafluoro-phthalocyanine (F₁₆CuPc) heterojunction were fabricated in single-sandwich and sandwich configurations, respectively. All the devices operated in depletion-accumulation (normally-on) mode. High field-effect mobility of 0.35 cm²/Vs was obtained for all devices, which was higher than that, 0.20 cm²/Vs of the devices with NaT₄ as active layer. The on/off ratio of 1 × 10⁵ was obtained for OHJTs with single-sandwich configuration, which is three orders of magnitude higher than that of OHJTs with sandwich configuration. Compared with OHJTs with sandwich configuration, the higher on/off ratio was mainly determined by the lower off state current in OHJTs with single-sandwich configuration. In OHJTs with single-sandwich configuration, the well-type shield effect of the source and drain electrodes caused a very narrow empty region in F₁₆CuPc film, which is responsible for the lower off state current.