A reddish La2O2S-based long-afterglow phosphor with effective absorption in the visible light region

Sm³⁺-activated La₂O₂S phosphors with good crystallinity were prepared by solid-state reaction. The formation mechanism of La₂O₂S formation was assumed and the phase change with different temperatures was discussed. The luminescence properties of phosphors with different sintering temperatures and different doping concentrations of Sm³⁺were investigated. The emission peak at 605 nm showed a well intensity can be attributed to the ⁴G_5/2 → ⁶H_7/2 transition of Sm³⁺. The optical absorption of La₂O₂S phosphors showed a stronger intensity in UV-vis region comparing with the Y₂O₂S phosphors. The long afterglow properties were investigated after the phosphors were excited with a fluorescent lamp. Phosphorescence lasted for about 3 min in the limit of light perception of the dark-adapted human eye (0.32 mcdm⁻²).     

Highly selective ethanol In2O3-based gas sensor

The sensitive composite material was prepared by loading Pt and La₂O₃ into ultrafine In₂O₃ matric material (8 nm) synthesized by microemulsion method. A highly selective ethanol gas sensor was developed based on hot-wire type gas sensor, which was sintered in a bead (0.8 mm in diameter) to cover a platinum wire coil (0.4 mm in diameter). The gas sensor was operated by a bridge electric circuit. The influences of La₂O₃ and Pt additives on C₂H₅OH sensing properties of In₂O₃-based gas sensor were discussed. The addition of La₂O₃ resulted in a prominent selectivity for C₂H₅OH, and the addition of Pt improved the response rate to C₂H₅OH without affecting the sensitivity. The temperature and humidity characteristics of the sensor output were also investigated. The selective sensor had low power consumption, significantly minor humidity and temperature dependence, high selectivity and prominent long-term stability.     

Nanocrystalline chemically modified CdIn2O4 thick films for H2S gas sensor

CdIn₂O₄ sensor with high sensitivity and excellent selectivity for H₂S gas was synthesized by using sol-gel technique. Structural, electrical and gas sensing properties of doped and undoped CdIn₂O₄ thick films were studied. XRD revealed the single-phase polycrystalline nature of the synthesized CdIn₂O₄ nanomaterials. Since the resistance change of a sensing material is the measure of its response, selectivity and sensitivity was found to be enhanced by doping different concentrations of cobalt in CdIn₂O₄ thick films. The sensor exhibits high response and selectivity toward H₂S for 10 wt.% Co doped CdIn₂O₄ thick films. The current-voltage characteristics of 10 wt.% Co doped CdIn₂O₄ calcined at 650 °C shows one order increase in current with change in the bias voltage at an operating temperature of 200 °C for 1000 ppm H₂S gas.     

Effect of H2S treatment on properties of CuInS2 thin films deposited by chemical spray pyrolysis at low temperature

CuInS₂ thin films were deposited by chemical spray of aqueous solutions containing CuCl₂, InCl₃ and thiourea at substrate temperature of 250 °C in air and subjected to annealing at 530 °C in H₂S atmosphere. Structure and composition before and after annealing were studied by XRD, EDS, XPS and Raman spectroscopy. As-sprayed films were low-crystalline, showed uniform distribution of elements in film thickness and no oxygen content. For the CuInS₂ films deposited from the solutions with [Cu²⁺] / [In³⁺] = 1.0 and 1.1, H₂S treatment for 30 min increased the chalcopyrite content up to 73% and 51%, respectively. Cu_XS phase in sprayed CIS films promotes the crystallite growth but retards the formation of chalcopyrite phase during H₂S treatment.     

Synthesis and photoluminescence of In2O3 nanocrystals and submicron crystals from InCl3•4H2O and thiourea

Two routes have been proposed for the synthesis of In₂O₃ powders from InCl₃•4H₂O and thiourea. One route involved a two-step procedure (that is, firstly, In₂S₃ clusters constructed with mainly nanoflakes were synthesized by heating the mixture of InCl₃•4H₂O and thiourea in air from room temperature to 200 °C, coupled with a subsequent washing treatment; secondly, In₂O₃ was obtained by calcining the In₂S₃ clusters in air at 600 °C for 6 h), and the other route was a one-step procedure (that is, In₂O₃ was synthesized directly by calcining the mixture of InCl₃•4H₂O and thiourea in air at 600 °C for 6 h). The resultant products were characterized by X-ray diffraction, energy dispersive X-ray spectroscopy, scanning electronic microscope and room temperature photoluminescence (RT-PL) spectra. It was observed that the In₂O₃ nanocrystals obtained via the two-step procedure exhibited PL peaks at about 453 and 471 nm, corresponding to the defeat-related emission; while the In₂O₃ submicron polyhedral crystals obtained via the one-step procedure and In₂O₃ pyramids obtained by calcining the only InCl₃•4H₂O in air at 600 °C for 6 h displayed a PL band centered at around 338 nm, corresponding to the band edge emission.     

Varistor properties of ZnO-Pr6O11-CoO-Cr2O3-Y2O3-In2O3 ceramics

The varistor properties of the ZnO-Pr₆O₁₁-CoO-Cr₂O₃-Y₂O₃-In₂O₃ ceramics were investigated for different concentrations of In₂O₃. The increase of In₂O₃ concentration slightly increased the sintered density (5.60-5.63 g/cm³) and slightly decreased the average grain size (3.4-2.9 μm). The breakdown field increased from 6023 to 14822 V/cm with increasing concentration of In₂O₃. The nonlinear coefficient increased from 17.6 to 44.6 for up to 0.005 mol%, whereas the further doping caused it to decrease to 36.8. In₂O₃ acted as an acceptor due to the donor concentration, which decreases in the range of 1.02 × 10¹⁷ to 0.24 × 10¹⁷/cm³ with increasing concentration of In₂O₃.     

Synthesis and characterization of CdO-doped nanocrystalline ZnO:TiO2-based H2S gas sensor

This paper reports the preparation and gas-sensing characteristic of ZnO:TiO₂-based hydrogen sulfide (H₂S) gas sensor with different mol% of CdO by polymerized complex method. The structural and gas-sensing properties of ZnO:TiO₂ materials have been characterized using X-ray diffraction and gas-sensing measurement. The electrical resistance response of the sensor based on the materials was investigated at different operating temperatures and different gas concentrations. The sensor with 10 mol% CdO-doped ZnO:TiO₂ shows excellent electrical resistance response toward H₂S gas. The cross sensitivity was also checked for reducing gases like CH₄, CO and H₂ gas. The selectivity and sensitivity of ZnO:TiO₂-based H₂S gas sensor were improved by the addition of 10 mol% of CdO at an operating temperature of 250 °C.     

The effect of Tb doping on the structure and spectroscopic properties of MgAl2O4 nanopowders

In this paper, a modified sol-gel method was employed to prepare nanostructured MgAl₂O₄ spinel powders doped with Tb³⁺ ions and thermally treated at 700 and 1000 °C for 3 h. The structural properties of the prepared at 700 and 1000 °C powders where characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). According to obtained XRD patterns the formation of single-phase spinels after calcination was confirmed. The XRD analyses demonstrated that the powders were single-phase spinel nanopowders with high crystallite dispersion. The Rietveld method was applied to calculate lattice parameters. The averaged spinel particle size was determined to be ∼10 nm for calcination at 700 °C and ∼20 nm at 1000 °C. The emission and excitation spectra measured at room and low temperature (77 K) for the samples calcined at 700 and 1000 °C demonstrated characteristic spectra of Tb³⁺ ions. The effect of MgAl₂O₄:Tb³⁺ grain sizes on luminescence properties was noticed.     

Synthesis and luminescent characteristic of Eu-doped (Gd,Lu)2O3 nanopowders

Eu³⁺ doped (Gd,Lu)₂O₃ nanopowders with particle sizes ranging from 20 to 70 nm were synthesized by the co-precipitant method using mixed precipitants, namely the mixture of ammonium hydroxide (NH₃⋅H₂O) and ammonium hydrogen carbonate (NH₄HCO₃). The precipitate precursor prepared by this method was believed to possess a basic carbonate composition and its thermal decomposition of the (Gd,Lu)₂O₃:Eu³⁺ powders were investigated by Thermogravimetric analysis and differential thermal analysis (TG-DTA). This preparation was followed by a calcination process at 800-1100 °C and corresponding phosphor structure were examined by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Photoluminescence measurement of the (Gd,Lu)₂O₃:Eu³⁺ particles show typical red emission at the 612 nm corresponding to the ⁵D₀ → ⁷F₂ transition. We found that the optimal Eu³⁺ molar doping concentration, calcined temperature and reaction time were 7 mol%, 1000 °C, and 2 h, respectively, which is helpful to obtain the final transparent ceramics with excellent properties.     

Preparation and studies of Eu and Tb co-doped Gd2O3 and Y2O3 sol-gel scintillating films

Eu³⁺ (2.5 at.%) and Tb³⁺ (0.005-0.01 at.%) co-doped gadolinium and yttrium oxide (Gd₂O₃ and Y₂O₃) powders and films have been prepared using the sol-gel process. High density and optical quality thin films were prepared with the dip-coating technique. Gadolinium (III) 2,4-pentadionate and yttrium (III) 2,4-pentadionate were used as precursors, and europium and terbium in their nitrate forms were used as doping agents. Chemical and structural analyses (infrared spectroscopy, X-ray diffraction and high-resolution transmission electron microscopy) were conducted on both sol-gel precursor powders and dip-coated films. The morphology of thin films heat-treated at 700 °C was studied by means of atomic force microscopy. It was shown that the highly dense and very smooth films had a root mean roughness (RMS) of 2 nm ± 0.2 (A = 0.0075 Tb³⁺) and 24 nm ± 3.0 (B = 0.01 Tb³⁺). After treatment at 700 °C, the crystallized films were in the cubic phase and presented a polycrystalline structure made up of randomly oriented crystallites with grain sizes varying from 20 to 60 nm. The X-ray induced emission spectra of Eu³⁺- and Tb³⁺-doped Gd₂O₃ and Y₂O₃ powders showed that Tb³⁺ contents of 0.005, 0.0075 and 0.01 at.% affected their optical properties. Lower Tb³⁺ concentrations (down to 0.005 at.%) in both systems enhanced the light yield.     

Influence of Ga2O3 addition on transparent conductive oxide films of In2O3-ZnO

Influence of incorporation of Ga in amorphous In-Zn-O transparent conductive oxide films was investigated as a function of Zn/(Zn + In). For In-Zn-O films with no Ga₂O₃, the range of Zn/(Zn + In) ratio where the amorphous phase appears became narrow at a substrate temperature of 250 °C. With increasing Ga₂O₃ quantity, amorphous films were obtained even at a high substrate temperature of 250 °C in a wider range of Zn/(Zn + In) than that of In-Zn-O films with no Ga₂O₃. This means that the trend of crystallization at higher substrate temperature was disturbed with additional Ga incorporation. For the film deposited from ZnO:Ga (Ga₂O₃: 4.5-7.5 wt%) and In₂O₃ targets, we obtained a resistivity of 2.8 × 10⁻⁴ Ω cm, nearly the same value as that for an In-Zn-O film with no Ga₂O₃. The addition of more than 7.5 wt% Ga₂O₃ induced a widening of the optical band gap.     

Structural properties of Al2O3-La2O3 binary oxides prepared by sol-gel

The structural properties of La₂O₃ and Al₂O₃-La₂O₃ binary oxides prepared by sol-gel were studied by XRD, HRTEM and UV-vis. The binary oxides with high lanthana contents show an amorphous structure after calcination at 650 °C. At calcination temperatures higher than 1000 °C there is a phase transformation from the amorphous state to the crystalline LaAlO₃ with a perovskite structure. The structure of La₂O₃ is consistent with the hexagonal system; however, some crystalline microdomains with a monoclinic structure were detected by HRTEM. Islands of La₂O₃ and LaAl₁₁O₁₈ phases were detected at high lanthana concentration in the binary oxide. The modification in the coordination shell of the Al³⁺ cations due to the interaction with La³⁺ cations confirms the formation of phases with a perovskite structure and the presence of islands of the LaAl₁₁O₁₈ phase.     

High pressure luminescence and time resolved spectra of La2Be2O5:Pr

We present luminescence, luminescence excitation and luminescence time resolved spectra of La₂Be₂O₅:Pr³⁺ system. We used high pressure spectroscopy approaches, with high pressure applied in diamond anvil cell (DAC) and sapphire anvil cell (SAC), for detailed analysis of luminescence related to the 4f5d → 4f² and 4f² → 4f² transitions. We present effect of up-converted luminescence related to 4f5d → 4f² transition excited with 488 nm. We also discussed possibility of existence of praseodymium trapped exciton (PTE) states in La₂Be₂O₅:Pr³⁺ system. Lack of the PTE is attributed to high quantity of bulk modulus of this material.     

Microwave dielectric properties of Li2TiO3 ceramics sintered at low temperatures

Li₂TiO₃ ceramics were prepared at the sintering temperatures from 1050 to 1250 °C. The optimal microwave dielectric properties were ?_r = 23.29, Q × f = 15,525 GHz (5.9 GHz), and τ_f = 35.05 ppm/ °C for the sample sintered at 1200 °C. The microwave dielectric properties were improved obviously when the Li₂TiO₃ ceramics were sintered at low temperatures with small additions of H₃BO₃ (B₂O₃ in the form of H₃BO₃). Only monoclinic Li₂TiO₃ was found in the pure or H₃BO₃-doped Li₂TiO₃ ceramics. About 1.0 wt.% H₃BO₃ addition aided the sintering of Li₂TiO₃ ceramics effectively while excessive H₃BO₃ (≥2.5 wt.%) was not favorable. Typically the best microwave dielectric properties were ?_r = 23.28, Q × f = 37,110 GHz (6.3 GHz), and τ_f = 30.43 ppm/ °C for the 1.0 wt.% H₃BO₃-doped Li₂TiO₃ ceramic sintered at 920 for 3 h, which is promising for LTCC applications.     

Fabrication of transparent La2Hf2O7 ceramics from combustion synthesized powders

Transparent La₂Hf₂O₇ (LHO) ceramics were, for the first time, successfully fabricated from combustion-synthesized powders. Nanosized La₂Hf₂O₇ powders were obtained through combustion reaction, using glycine or EDTA as a fuel. The as-made powders were isostatically pressed at 180 MPa and then sintered at 1850 °C for 6 h in hydrogen atmosphere. The resulting ceramics have high optical transmittance.     

Uniform lanthanide-doped Y2O3 hollow microspheres: Controlled synthesis and luminescence properties

Lanthanide-doped uniform pure cubic phase Y₂O₃ hollow microspheres have been successfully synthesized via a facile, high yield urea-based coprecipitation route with assistant of carbon spheres templates. The diameter and shell thickness of the microspheres can be manipulated by adjusting carbon sphere templates. Under a 980 nm excitation, Yb³⁺/Er³⁺, Er³⁺, Yb³⁺/Tm³⁺-doped Y₂O₃ hollow microspheres emit bright upconversion red, green, blue light with high purity, respectively, while Eu³⁺, Eu³⁺/Tb³⁺-doped Y₂O₃ hollow microspheres exhibit intense downconversion red light under the excitation of 254 nm ultraviolet light. Especially, the 610 nm emission intensity of Eu³⁺ in the Eu³⁺/Tb³⁺-codoped Y₂O₃ hollow microspheres is almost 5 times of that in the Y₂O₃:Eu³⁺ hollow microspheres indicating the occurring of the energy transfer from Tb³⁺ to Eu³⁺ ions.     

Luminescence properties of Ca4Y6(SiO4)6O:RE (RE = Eu, Tb, Dy, Sm and Tm) under vacuum ultraviolet excitation

The vacuum ultraviolet excited luminescent properties of Eu³⁺, Tb³⁺, Dy³⁺, Sm³⁺ and Tm³⁺ in the matrices of Ca₄Y₆(SiO₄)₆O were investigated. The bands at about 173 nm in the vacuum ultraviolet excited spectra were attributed to host lattice absorption of the matrix Ca₄Y₆(SiO₄)₆O. For Eu³⁺-doped samples, the O²⁻ → Eu³⁺ CTB was identified at 258 nm. Typical 4f-5d absorption bands in the region of 195-300 nm were observed in Tb³⁺-doped samples. For Dy³⁺-doped and Sm³⁺-doped samples, the broad excitation bands consisted of host absorptions, CTB and f-d transition. For Tm³⁺-doped samples, the O²⁻ → Tm³⁺ CTB was located at 191 nm. About the color purity and emission intensity, Ca₄Y₆(SiO₄)₆O:Tb³⁺ is an attractive candidate of green light PDP phosphor, and Ca₄Y₆(SiO₄)₆O:Dy³⁺ has potential application in the field of mercury-free lamps.     

Effect of Y3+ codoping on luminescence decays of the 4I13/2 level in Er3+-doped Al2O3 powders prepared by a sol-gel method

The luminescence lifetime of the 0.01 mol.%-0.1 mol.% Er³⁺- and 0–20 mol.% Y³⁺-codoped Al₂O₃ powders prepared at a sintering temperature of 900°C in a non-aqueous sol-gel method has been investigated to explore the enhanced mechanism of photoluminescence properties of the Er³⁺-doped Al₂O₃ by Y³⁺ codoping. For the 0.1 mol.% Er³⁺-Y³⁺-codoped Al₂O₃ powders, the measured lifetime of Er³⁺ gradually increases with increasing Y³⁺ concentration. Consequently, codoping with 20 mol.% Y³⁺ leads to an increase in the measured lifetime from 3.5 to 5.8 ms. By comparing the measured lifetime for different Er³⁺ concentrations in the Al₂O₃ powders, the radiative lifetime of both the Er³⁺-doped and the Er³⁺-Y³⁺-codoped Al₂O₃ powders is estimated to be about 7.5 ms. Infrared absorption spectra indicate that Y³⁺ codoping does not change the-OH content in the Er³⁺-Y³⁺-codoped Al₂O₃ powders. The prolonged luminescence lifetime of the ⁴I_13/2 level of Er³⁺ in Er³⁺-doped Al₂O₃ powders by Y³⁺ codoping is ascribed to the decrease in the energy transfer rate between the Er³⁺ ions and the Er³⁺ and -OH, respectively, due to the suppressed interaction between Er³⁺ ions.     

Fast response detection of H2S by CuO-doped SnO2 films prepared by electrodeposition and oxidization at low temperature

Fast response detection of H₂S by CuO-doped SnO₂ films prepared was prepared by a simple two-step process: electrodeposition from aqueous solutions of SnCl₂ and CuCl₂, and oxidization at 600 °C. The phase constitution and morphology of the CuO-doped SnO₂ films were characterized by X-ray diffraction and scanning electron microscopy. In all cases, a polycrystalline porous film of SnO₂ was the product, with the CuO deposited on the individual SnO₂ particles. Two types of CuO-doped SnO₂ films with different microstructures were obtained via control of oxidation time: nanosized CuO dotted island doped SnO₂ and ultra-uniform, porous, and thin CuO film coated SnO₂. The sensor response of the CuO doped SnO₂ films to H₂S gas at 50–300 ppm was investigated within the temperature range of 25–125 °C. Both of the CuO-doped SnO₂ films show fast response and recovery properties. The response time of the ultra-uniform, porous, and thin CuO coated SnO₂ to H₂S gas at 50 ppm was 34 s at 100 °C, and its corresponding recovery time was about 1/3 of the response time.     

Influence of dysprosium oxide doping on thermophysical properties of LaMgAl11O19 ceramics

This paper deals with the influence of dysprosium oxide doping on thermophysical properties of LaMgAl₁₁O₁₉ ceramics. LaMgAl₁₁O₁₉ ceramic powders doped with different contents of dysprosium oxide were pressureless-sintered at 1700 °C for 10 h in air to fabricate dense bulk ceramics. La_1−xDy_xMgAl₁₁O₁₉ (x = 0, 0.1, 0.2, 0.3) ceramics have a relative density of 90.7–96.0%, and exhibit a single phase of magnetoplumbite structure. Thermal diffusivity and thermal expansion coefficients of La_1−xDy_xMgAl₁₁O₁₉ ceramics were measured with a laser flash method and a high-temperature dilatometer. Thermal diffusivity of La_1−xDy_xMgAl₁₁O₁₉ ceramics decreases with increasing Dy₂O₃ content at identical temperature levels. The measured thermal conductivity of La_1−xDy_xMgAl₁₁O₁₉ ceramics is located in the range of 2.52–2.89 W m⁻¹ K⁻¹ at 1200 °C. Thermal expansion coefficient of La_0.8Dy_0.2MgAl₁₁O₁₉ ceramic is slightly higher than that of undoped LaMgAl₁₁O₁₉ ceramic at identical temperature levels.