Tailoring in-plane crystallographic orientation of epitaxial YBa2Cu3O7 − x thin films having perpendicular c-axis texture

Control of the in-plane crystallographic orientation of YBa₂Cu₃O_7 − x (YBCO) films on (100) MgO substrates is of significant application value due to the selective enhancement of superconducting properties. In the present work, the preparation, crystallographic and superconducting properties of YBCO films deposited on MgO substrates are reported. Crystallographic in-plane orientation was realized by means of tailoring the pulsed laser deposition conditions and the use of interfacial buffering structures. Superconductiong properties were measured for films having different in-plane orienations. The results indicate that the 0^° in-plane oriented films showed the highest current density of 1.62 MA/cm² that was attributed to the elimination of high-angle grain boudaries. Additionally, the growth mechanism of YBCO films was discussed in terms of crystallographic and thermodynamic theory.     

High-speed preparation of c-axis-oriented YBa2Cu3O7-δ film by laser chemical vapor deposition

YBa₂Cu₃O_7-δ (YBCO) films were prepared by laser chemical vapor deposition using Y(DPM)₃, Ba(DPM)₂/Ba(TMOD)₂ and Cu(DPM)₂ as precursors with enhancement by a continuous wave Nd:YAG laser. A c-axis-oriented YBCO film almost entirely in a single phase was obtained. The YBCO film consisted of rectangular grains about 30 μm in size. The highest deposition rate was about 100 μm h^− 1, which was 10-1000 times higher than that of conventional MOCVD.     

Improved critical current densities in thick YBa2Cu3O7 − δ multilayer films interspaced with non-superconducting YBa2Cu3Ox nanodots

We have fabricated and studied quasi-multilayered thick YBa₂Cu₃O_7 − δ (YBCO) films composed of several YBCO layers interspaced with quasi-layers of non-superconducting YBa₂Cu₃O_x nanodots, grown by Pulsed Laser Deposition on SrTiO₃ (100) substrates. Magnetization J_c(B) at 77.3 K for these thick films showed significant improvement as compared to pure YBa₂Cu₃O_7 − δ films of same or even smaller thickness. A high J_c(B) in our quite thick films (1 μm to 6 μm) provides a very high total critical current per centimetre of the film width, I_c − w. Critical current as high as 830 A per cm width in self field and 77.3 K was achieved in 5 μm thick quasi-multilayer film with non-superconducting YBa₂Cu₃O_x nanodots. Frequency-dependent susceptibility measurements showed also an increase in the pinning potential. The angular dependence of I_c − w at 86.5 K, in 3 T shows a clear indication of anisotropic pinning centres aligned along the c-direction.     

Geologic materials' response to shaped charge penetration

A comprehensive experimental effort was recently conducted to evaluate the penetration performance of oilwell perforating charges into stressed and unstressed Berea sandstone cores. Rock confining pressure (P_c) and pore fluid pressure (P_p) were varied from ambient to 10,000 psi, to simulate downhole stress environments typically experienced by subterranean reservoir rock. Experiments yielded a generally inverse correlation between penetration depth and effective stress (σ_eff). However, a new definition of effective stress is proposed. Historically, the perforating community has defined σ_eff = P_c − P_p, but a new treatment (σ_eff = P_c − aP_p; a = 0.5) better fits both present and published historical penetration results. These findings culminate an initial application of combined penetration mechanics and rock mechanics analyses to the investigation of shaped charge penetration into geologic materials. Future work will address different rock types, additional poroelastic quantities, and dynamic effects as they contribute to pressure-induced strengthening of target rock.     

Embedding of nanoparticles as flux pinning sites in superconducting samples

Crystallographic orientations of thin films and bulk, melt-textured YBa₂Cu₃O_x high-T_c superconductors with embedded Y₂Ba₄CuMO_x (M = Nb, Zr, Ag) nanoparticles are studied by electron backscatter diffraction. The Y₂BaCuO₅ particles exhibit no preferred orientation but have a strong negative influence on the matrix orientation. In contrast, the nanoparticles are not disturbing the texture of the YBCO matrix. For the bulk samples, depending on the preparation route, a different particle orientation with respect to the matrix is obtained. Untextured M-2411 nanoparticles are formed by solid state reaction during the melt process by adding oxides (Nb₂O₅ or Y₂O₃) to the precursor powder. Pre-formed Y₂Ba₄CuMO_x particles added to the precursor in the form of pre-reacted nanopowder, exhibit a dominant single orientation related to the surrounding YBCO matrix. In the case of thin films prepared using laser ablation with a bulk YBCO sample with embedded nanoparticles as a target, the nanoparticles are transferred into the thin film, but the transferred M-2411 particles are found to be randomly oriented. Nevertheless, these films exhibit increased flux pinning properties.     

Growth and Properties of Double-Sided YBCO Films Deposited by Off-Axis Sputtering for Microwave Applications

The double-sided YBa₂Cu₃O _y (YBCO) films were grown on LaAlO₃ (LAO) substrates by an off-axis magnetron sputtering system with two 2-inch sputtering guns. High-quality YBCO films within a 50-mm-diameter area were obtained. The homogeneous YBCO films revealed transition temperature T _c(R=0) of 86K and a critical current density J _c (zero field) of 1.5×10⁶ A/cm² at 77 K. Thesurface impedance of YBCO films was measured using a probe-coupling type microstripline resonator method. The surface resistance R _S of 1.8 was obtained at 77 K around 2180 MHz. Additionally, a HTS three pole bandpass filter was fabricated and revealed a good microwave characteristic. The influence of surface roughness on microwave properties of YBCO films was discussed.     

Microwave Current Imaging in Passive HTS Components by Low-Temperature Laser Scanning Microscopy (LTLSM)

We have used the Low-Temperature Laser Scanning Microscope (LTLSM) technique for a spatially resolved investigation of the microwave transport properties, nonlinearities, and material inhomogeneities in an operating coplanar waveguide YBa₂Cu₃O_{7‐δ}(YBCO) microwave resonator on a LaAlO₃ (LAO) substrate. The influence of twin-domain blocks, in-plane rotated grains, and micro-cracks in the YBCO film on the nonuniform radiofre-quency (rf) current distribution was measured with a micrometer-scale spatial resolution. The impact of the peaked edge currents and rf field penetration into weak links on the linear device performance were also studied. The LTLSM capabilities and its future potential for nondestructive characterization of the microwave properties of superconducting circuits are discussed.     

Development of random access memory in Nd0.7Ca0.3MnO3/YBa2Cu3O7 heterostructure

The effects of electrode on the resistive switching in Nd_0.7Ca_0.3MnO₃(NCMO)/YBa₂Cu₃O₇(YBCO) heterostructure are investigated at room temperature. For Cu/NCMO/YBCO, resistance can be switched on-and-off from a high- to low-resistance state at a steady ratio of 25% with a pulsed-voltage of ± 3 V. On the other hand, a giant resistance-change as large as 1350% is observed with ± 5 V for Ag/NCMO/YBCO with a fast decay down to 550%. Our experimental results show clear evidences that the nature of interfaces can be modified by the electric field and it dictates the resistive switching behavior of these heterostructure devices, which are the potential candidates for the random access memory.     

Microwave characterization of laser ablated Y1Ba2Cu3O7−x thin films

In the present study we report the measurements of microwave surface resistance (R_s) of YBCO thin films on LaAlO₃ substrate as a function of temperature, thickness and magnetic field by microstrip resonator technique. The T_c(R = 0) of the films is 90 K and J_c > 10⁶ A/cm² at 77 K. The microwave surface resistance has been measured for films of various thicknesses. The value of R_s has been found to be initially decreased with increasing film thickness due to increase in number of defects. A minimum microwave surface resistance has been obtained for film thickness of about 300 nm. The increase of R_s with film thickness above 300 nm is possibly due to degradation of the film microstructure as observed with Atomic Force Microscopy. Temperature dependence of surface resistance has been studied for best quality films. The field induced variations of surface resistance are also investigated by applying dc magnetic field perpendicular to stripline structure and surface of the film. A general linear and square field dependence of R_s at low and high value of fields has been observed with critical field value of 0.4 T which confirms the microwave dissipation induced by flux flow in these resonators at 10 GHz frequency. The hysteresis of R_s in dc field observed for field value above critical field shows the higher value of surface resistance in decreasing field than in increasing field which is in agreement with one state critical model and is a characteristic of homogeneous superconductors.     

High-temperature superconducting dual-mode resonator on (100) MgO substrate

We report, for the first time to our knowledge, a clear resonant peak split in the range of 7.7–9.7 GHz in a perturbed dual-mode disk-type resonator (DMDR) made of YBa₂Cu₃O_7–x (YBCO) superconducting thin film on MgO substrate. Epitaxial YBCO superconducting thin films were grown on (100) MgO substrates by pulsed laser deposition technique. The critical temperature of superconducting thin film on MgO substrate was 85 K. Superconducting dualmode disk resonators were designed by microwave design software, EEsof, and patterned by photolithography and a wet-etch process. The unloaded quality factor (Q_UL) of the superconducting DMDR was found to be 1,312 at 77 K. We believe this type of DMDR can be utilized for dual-mode resonator-based filters for satellite communications.     

Low temperature amorphous growth of semiconducting Y-Ba-Cu-O oxide thin films in view of infrared bolometric detection

YBa₂Cu₃O_6 + x (YBCO) compounds are well known to exhibit superconducting properties for x > 0.5 and semiconducting properties for lower oxygen content. In this work, YBCO oxide thin films of the semiconducting phase were deposited by direct-current (DC) hollow cathode sputtering at low temperature in the 100 to 400 °C range. Structural, electrical and optical properties are investigated and discussed in relation with the envisaged bolometric detection application. Structural characterizations show that films are amorphous, with a granular structure of low roughness (3 nm rms). DC electrical measurements both reveal that films grown at 100 °C exhibit a high temperature coefficient of resistance (TCR ~ − 3% K^− 1 to − 4% K^− 1 at 300 K) and an optimized low resistivity value of 345 Ω·cm at 300 K. Consequently, this material is suitable for uncooled infrared bolometer application and can be deposited at 100 °C in a complementary metal-oxide-semiconductor compatible technological process for co-integration with readout circuitry. In addition, optical measurements performed in the 0.5 to 2.2 μm wavelength range on films grown at 100 °C highlight optical conductivity values in line with those expected for YBCO material, as well as the presence of two optical band gaps that are discussed with respect to the film nanostructure.     

Structure and electrical transport properties of pure and Li2O-doped CuO/MgO solid solution

The different electrical properties, σ, ?′, tan δ and E_σ of pure and Li₂O-doped CuO/MgO solid solution were investigated. The mole fraction of CuO (MF) was varied between 0.048 and 0.2. Pure and doped samples were subjected to heat treatments at 673 and 1073 K. The results revealed that the amount of CuO dissolved in MgO lattice increases progressively by increasing the MF as evidenced from the progressive decrease in the intensity of all diffraction lines of undissolved CuO phase. The dissolution process of copper ions in MgO lattice was accompanied by progressive increase in its lattice parameter. This process being conducted at 1073 K was accompanied by a significant progressive increase in the values of σ, ?′ and tan δ with subsequent decrease in the value of E_σ. The increase in the MF value of CuO from 0.048 to 0.2 led to a significant increase in the value of σ_DC, measured at room temperature, from 6.33 × 10⁻¹² to 9.9 × 10⁻¹⁰ Ω⁻¹ cm⁻¹ and E_σ decreases from 0.76 to 0.58 eV.Li₂O doping of the investigated system followed by calcination at 1073 K resulted in a measurable increase in values of σ, ?′ and tan δ with subsequent decrease in E_σ. These results were discussed in the light of the possible effective increase in the charge carriers concentration (Cu²⁺ions dissolved in MgO lattice) and also to an effective increase in mobility of these charge carriers by Li₂O doping.     

Effect of Firing Temperature on the Structure and Properties of YBa2Cu3O7−x Films by TFA-MOD Method

YBa₂Cu₃O_7−x (YBCO) films were fabricated on LaAlO₃ (LAO) substrate under various firing temperatures (760–870 °C) in the crystallization process by metalorganic deposition (MOD) method using trifluoroacetates. The effect of firing temperature on the structure and properties of YBCO films was systematically investigated. According to the XRD and SEM images, the films fired at low temperature (760–800 °C) showed poor electrical performance due to rough surfaces and impurity phases. However, the films fired at 850 °C showed the highest critical temperature of 90 K and the highest J _c of 3.1 MA/cm² which attribute to the formation of a purer YBCO phase, fewer pores, and stronger biaxial texture.     

Influence of a degraded SrTiO3 layer at the YBa2Cu3O7−δSrTiO3 interface on the dielectric behavior at cryogenic temperature

In an YBa₂Cu₃O_7−δ/SrTiO₃/YBa₂Cu₃O_7−δ parallel capacitor fabricated by a chemical mechanical planarization method, the dielectric constant and loss in the presence of electric fields at 2.2 K were more than 26,000 and less than 0.027, respectively. We propose a multilayer model that explains this behavior. The model assumes that the SrTiO₃ film is composed of single-crystal-like SrTiO₃ layers with a dielectric constant ε_r = 30,000 and degraded SrTiO₃ layers with dielectric constants that vary continuously from 25, the dielectric constant of YBa₂Cu₃O_7−δ, to 30,000. Results of a numerical calculation revealed that the thickness of the single-crystal-like SrTiO₃ layer was more than 92% of a 600-nm-thick SrTiO₃ film.     

14 kV single-phase superconducting fault current limiter based on YBCO films

We present the fabrication and short circuit test results of a 14 kV single-phase resistive superconducting fault current limiter (SFCL) based on YBa₂Cu₃O₇ (YBCO) films. Individual components were processed using the 4″ YBCO films and have the rated voltage and current of 600 V and 35 A at 77 K, respectively. Twenty four components, eight components in series and three lines in parallel, make a module having the rated voltage and current of 4.8 kV and 105 A, respectively. Three modules were assembled in series to produce the SFCL working at 77 K, a 14 kV single-phase machine for the 22.9 kV Y-Y grid. short circuit tests were successfully conducted in an accredited test facility with the maximum fault currents up to 14.1 kA_P. All components quenched together upon faults and shared the rated voltage evenly without any supplementary device between the modules. This proves that the SFCL based on YBCO films may not only work reliably at 22.9 kV, but also provide technical feasibility for higher voltage application including the transmission grids.     

Preparation of YBCO Superconducting Thick Films on MgO Substrates by Modified Melt Growth Process

Superconducting thick films (200–300 m) of YBCO have been fabricated successfully on MgO substrates by a new approach. The precursor powders (YBa₂Cu₃O_7– (Y123) + 0.1 mol Y₂BaCuO₅(Y211)) are placed between two MgO (10 mm×10 mm) slices to form sandwich structure. The YBCO thick films have been obtained from the precursors by modified melt growth process. Resistance measurements of YBCO thick films show T _con of 87.3 K and T of 4.5 K. Estimates using hysteresis loops and the Bean model give a value of 2.78×10³ A/cm² (77 K, 0T) for the critical current density. The observations of scanning electron microscopy (SEM) and X-ray diffraction (XRD) patterns show the supercoducting Y123 phase matrix containing discrete Y211 inclusions.     

Optically induced changes and long-term relaxations of resistivity and critical temperature in He irradiated YBa2Cu3Ox

Thin films of YBa₂Cu₃O_x with superconducting critical temperatures (T_c) ranging from 58 K to 72 K were prepared by pulsed-laser deposition and subsequent irradiation with 75 keV He⁺ ions. Optical excitation of the films with a He-Ne laser resulted in a small resistivity reduction, when the experiment was carried out a short period of time after the ion irradiation. The value of T_c was essentially unchanged by the optical treatment. Further light excitation experiments did not show a significant effect on the resistivity of the samples. We conclude that ion-irradiated metallic YBa₂Cu₃O_x does not exhibit the persistent photoconductivity observed in oxygen-depleted samples with comparable critical temperatures. On the other hand we have observed a long-term relaxation of T_c towards larger values that takes place even when the samples are kept in the dark. Our results indicate that T_c may increase after ion irradiation to an asmptotic value about 20% over the initial value on a typical time scale of years. This observation may be important for possible applications of light-ion irradiated YBa₂Cu₃O_x.     

YBa2Cu3O7 − δ thin films with enhanced film properties grown on sapphire using Y2O3/CeO2 bi-layer buffer

Highly epitaxial, microcrack-free thin films of YBa₂Cu₃O_7 − δ (YBCO) have been grown by pulsed laser deposition on sapphire substrates with a double buffer of Y₂O₃/CeO₂. The Y₂O₃ layer, which has excellent compatibility with CeO₂ and YBCO, has been found to be beneficial in reducing the surface porosity of YBCO films as well as inhibiting a-axis-oriented epitaxial growth. The reduction in porosity is attributed to the presence of the Y₂O₃ layer which acts as a suitable barrier for the chemical reaction occurring at high deposition temperatures between YBCO and CeO₂. Due to the improvement in film quality and surface morphology, enhancement of the self-field critical current density (J_c, 77.3 K) by as high as 30% was obtained for a 650-nm thick YBCO film deposited on Y₂O₃/CeO₂ bi-layer buffer compared to simultaneously-deposited YBCO film on CeO₂ single-layer buffer only.     

Silver doping: A potential means to grow high quality YBa2Cu3O7?x thin films on bare sapphire

High qualityAg-doped YBa₂Cu₃O_7–x (YBCO) thin films have been grown by laser ablation on ¯1012 bare sapphire. This work demonstrates thatAg-doping can be used as very convenient means to realize good quality YBCO films on highly coveted sapphire substrates for microwave applications of highT _c thin films.     

YBCO-Buffered NdBCO Film with Higher Thermal Stability in Seeding REBCO Growth and Recycling Failed Bulk YBCO Superconductors

In this work, we report a strengthened superheating effect caused by a buffering YBa₂Cu₃O _y (YBCO or Y123) layer in the Nd_1+x Ba_2?x Cu₃O_7?y (NdBCO or Nd123) thin film with MgO substrate (i.e., NdBCO/YBCO/MgO thin film). In the cold-seeding melt-textured (MT) growth, the NdBCO/YBCO/MgO film presented an even higher superheating level, about 20 °C higher than that of nonbuffered NdBCO film (i.e., NdBCO/MgO film). Pole figure (X-ray Φ-scan) measurement reveals that the NdBCO/YBCO/MgO film has better in-plane alignment than the NdBCO/MgO film, which may be the main origin of the enhanced thermal stability. Using this NdBCO/YBCO/MgO film as the seed and under a maximum processing temperature (T _max) up to 1120 °C, we succeeded in growing various RE_1+x Ba_2?x Cu₃O_7?y (REBCO, RE=Gd, Sm, Nd, RE refers to rare elements) bulk superconductors and recycling the failed REBCO (RE=Y) bulks in a simple and feasible process.