The discharge properties of Na/Ni3S2 cell at ambient temperature

The discharge properties of a Na/Ni₃S₂ cell using 1 M NaCF₃SO₃ in tetra(ethylene glycol)dimethyl ether liquid electrolyte were investigated at room temperature. The products were characterized by X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy. Electrochemical properties of Na/Ni₃S₂ cells were also presented by cyclic voltammetry and the galvanostatic current method. Na/Ni₃S₂ cells have an initial discharge capacity of 420 mAh g⁻¹ with a plateau potential at 0.94 V versus Na/Na⁺. After the first discharge, Ni₃S₂ and Na react at room temperature and then form sodium sulfide (Na₂S) and nickel. Sodium ion can be partially deintercalated from Na₂S charge reaction. The discharge process can be explained as follows: Ni₃S₂ + 4Na ↔ 3Ni + 2Na₂S.     

A novel high-performance cylindrical hybrid supercapacitor with Li4−xNaxTi5O12/activated carbon electrodes

A cylindrical hybrid supercapacitor was fabricated using Li_4−xNa_xTi₅O₁₂ as an anode and activated carbon as a cathode. Li_4−xNa_xTi₅O₁₂ (0 ≤ x ≤ 0.6) powder was successfully crystallized, and the grain size of Li_4−xNa_xTi₅O₁₂ decreased with increasing Na content. This indicated that Na can enhance the electrochemical performance due to smaller grain size and ionic conductivity. However, excessive Na content causes a distortion of the original Li₄Ti₅O₁₂ structure during cycling. The hybrid supercapacitor with the Li_3.7Na_0.3Ti₅O₁₂ anode shows similar electrochemical performance to Li_3.4Na_0.6Ti₅O₁₂, and approximately 92% of the maximum cycle performance is retained, even after 5000 cycles at 2.5 Ag⁻¹.     

Enhanced electrical properties of pulsed laser-deposited CuIn0.7Ga0.3Se2 thin films via processing control

Polycrystalline CuIn_0.7Ga_0.3Se₂ thin films were prepared on soda-lime glass substrates using pulsed laser deposition (PLD) with various process parameters such as laser energy, repetition rate and substrate temperature. It was confirmed that there existed a limited laser energy, i.e. less than 300 mJ, to get phase pure CIGS thin films at room temperature. Particularly, even at room temperature, distinct crystalline CIGS phase was observed in the films. Crystallinity of the films improved with increasing substrate temperature as evidenced by the decrease of FWHM from 0.65° to 0.54°. Slightly Cu-rich surface with Cu_2−xSe phase was confirmed to exist by Raman spectra, depending on substrate temperature. Improved electrical properties, i.e., carrier concentration of ∼10¹⁸ cm⁻³ and resistivity of 10⁻¹ Ω cm at higher substrate temperature for the optimal CIGS films are assumed to be induced by the potential contributions from highly crystallized thin films, existence of Cu_2−xSe phase and diffusion of Na from substrates to films.     

A comparative study of CuInSe2 and CuIn3Se5 films using transmission electron microscopy, optical absorption and Rutherford backscattering spectrometry

CuInSe₂ and CuIn₃Se₅ films were grown by stepwise flash evaporation onto glass and Si substrates held at different temperatures. Transmission electron microscopy (TEM) studies revealed that the films grown above 370 K were polycrystalline, with CuInSe₂ films exhibiting larger average grain size than CuIn₃Se₅. Optical absorption studies yielded band gaps of 0.97±0.02 and 1.26±0.02 eV for CuInSe₂ and CuIn₃Se₅, respectively. Rutherford backscattering spectrometry (RBS) study of the films on Si showed that CuInSe₂/Si structures included an inhomogeneous interface region consisting of Cu and Si, whereas CuIn₃Se₅/Si structures presented sharp interface.     

Pyrite (FeS2) thin films prepared by spray method using FeSO4 and (NH4)2Sx

A simple spray method for the preparation of pyrite (FeS₂) thin films has been studied using FeSO₄ and (NH₄)₂S_x as precursors for Fe and S, respectively. Aqueous solutions of these precursors are sprayed alternately onto a substrate heated up to 120°C. Although Fe–S compounds including pyrite are formed on the substrate by the spraying, sulfurization of deposited films is needed to convert other phases such as FeS or marcasite into pyrite. A single-phase pyrite film is obtained after the sulfurization in a H₂S atmosphere at around 500°C for 30 min. All pyrite films prepared show p-type conduction. They have a carrier concentration (p) in the range 10¹⁶–10²⁰ cm⁻³ and a Hall mobility (μ_H) in the range 200–1 cm²/V s. The best electrical properties (p=7×10¹⁶ cm⁻³, μ_H=210 cm²/V s) for a pyrite film prepared here show the excellence of this method. The use of a lower concentration FeSO₄ solution is found to enhance grain growth of pyrite crystals and also to improve electrical properties of pyrite films.     

Carbon-doped Sb2S3 thin films: Structural, optical and electrical properties

We report the modification of electrical properties of chemical-bath-deposited antimony sulphide (Sb₂S₃) thin films by thermal diffusion of carbon. Sb₂S₃ thin films were obtained from a chemical bath containing SbCl₃ and Na₂S₂O₃ salts at room temperature (27 °C) on glass substrates. A carbon thin film was deposited on Sb₂S₃ film by arc vacuum evaporation and the Sb₂S₃-C layer was subjected to heating at 300 °C in nitrogen atmosphere or in low vacuum for 30 min. The value of resistivity of Sb₂S₃ thin films was substantially reduced from 10⁸ Ω cm for undoped condition to 10² Ω cm for doped thin films. The doped films, Sb₂S₃:C, retained the orthogonal stibnite structure and the optical band gap energy in comparison with that of undoped Sb₂S₃ thin films. By varying the carbon content (wt%) the electrical resistivity of Sb₂S₃ can be controlled in order to make it suitable for various opto-electronic applications.     

The influence of sodium on the properties of CuInS2 thin films and solar cells

The controlled incorporation of sodium into the absorber layer of CuInS₂ solar cells improved cell performance remarkably. Without toxic KCN treatment, conversion efficiencies of over 6% were achieved by sulfurization of sodium-containing precursors. We also investigated the characteristics of the sodium-incorporated CuInS₂ films by intentional addition and diffusion from a soda-lime glass. The ternary compound semiconductor of NaInS₂ was found to form mainly on the surface of each of the CuInS₂ films.     

Preparation of CuInS2 films with sufficient sulfur content and excellent morphology by one-step electrodeposition

One-step electrodeposition using sodium thiosulfate (Na₂S₂O₃) as a sulfur source has been studied for the preparation of Cu---In---S thin films. A deposited film is found to have a sufficiently high sulfur content compared with films deposited using thiourea as a sulfur source. The film deposited using Na₂S₂O₃ is also found to have an excellent morphology compared with electrodeposited Cu---In precursors. Predominant factors to govern film composition, In/Cu and S/(Cu + In) ratios, are also investigated in this study. An HC1 content added in order to decompose S₂O₃²⁻ ions in the solution is found to be one of the important factors to control composition of deposited films. A sulfur cocentration in the solution influences not only S/(Cu + In) ratio but also In/Cu ratio in the film. Reproducibility of film composition is deteriorated as the solution temperature increases.     

An investigation into effect of cationic precursor solutions on formation of CuInSe2 thin films by SILAR method

SILAR deposition of CuInSe₂ films was performed by using Cu²⁺–TEAH₃ (cupric chloride and triethanolamine) and In³⁺–CitNa (indium chloride and sodium citrate) chelating solutions with weak basic pH as well as Na₂SeSO₃ solution at 70 °C. A separate mode and a mixed one of cationic precursor solutions were adopted to investigate effects of the immersion programs on crystallization, composition and morphology of the deposited CuInSe₂ films. Chelating chemistry in two solution modes was deducted based on IR measurement. The XRD, XPS and SEM results showed that well-crystallized, smoothly and distinctly particular CuInSe₂ films could be obtained after annealing in Ar at 400 °C for 1 h by using the mixed cationic solution mode.     

Photoelectrochemical behavior of In2S3 formed on sintered In2O3 pellets

Microcrystals of In₂S₃ were formed on sintered In₂O₃ pellets by sulfurizing in H₂S atmosphere. The flat band potential of compound In₂S₃|In₂O₃ electrodes was evaluated as −1.0 V vs Ag|AgCl in 1 M KOH, 1 M Na₂S, 10⁻² M S. Significantly enhanced photocurrent was observed on compound In₂S₃|In₂O₃ electrodes with a lower degree of sulfurization to that of compound In₂S₃|In₂O₃ electrodes with higher degree of sulfurization. Photocurrent generation of compound In₂S₃|In₂O₃ electrodes was explained from the viewpoint of semiconductor sensitization.     

p-Type CuSbS2 thin films by thermal diffusion of copper into Sb2S3

We report the preparation of copper antimony sulfide (CuSbS₂) thin films by heating Sb₂S₃/Cu multilayer in vacuum. Sb₂S₃ thin film was prepared from a chemical bath containing SbCl₃ and Na₂S₂O₃ salts at room temperature (27 °C) on well cleaned glass substrates. A copper thin film was deposited on Sb₂S₃ film by thermal evaporation and Sb₂S₃/Cu layers were subjected to annealing at different conditions. Structure, morphology, optical and electrical properties of the thin films formed by varying Cu layer thickness and heating conditions were analyzed using different characterization techniques. XRD analysis showed that the thin films formed at 300 and 380 °C consist of CuSbS₂ with chalcostibite structure. These thin films showed p-type conductivity and the conductivity value increased with increase in copper content. The optical band gap of CuSbS₂ was evaluated as nearly 1.5 eV.     

Study of electron-beam evaporated Sn-doped In2O3 films

Electron beam evaporated Sn-doped In₂O₃ films have been prepared from the starting material with composition of (1 − x) In₂O₃ − -x SnO₂, where x = 0.0, 0.010, 0.025, 0.050, 0.090, and 0.120. X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, and X-ray diffraction analysis were carried out on the films. Luminous transmittance and electrical resistivity of the films, show weak dependence on x. The composition of the film ([Sn]/[In] atomic ratio) was found to differ from that of the starting material. In fact, the atomic ratio was higher in the film than in the starting material by a factor which increases with x (ranging from 1.0 to 2.6). There is a relatively broad resistivity minimum in the layer atomic ratio range Sn/In = 0.06 − -0.09. These results compare well with those reported in the literature for Sn-doped In₂O₃ films, prepared by pyrolitic (spray) method.     

Preparation and evaluation of Cu2ZnSnS4 thin films by sulfurization of E---B evaporated precursors

By sulfurization of E---B evaporated precursors, CZTS(Cu₂ZnSnS₄) films could be prepared successfully. This semiconductor does not consist of any rare-metal such as In. The X-ray diffraction pattern of CZTS thin films showed that these films had a stannite structure. This study estimated the optical band gap energy as 1.45 eV. The optical absorption coefficient was in the order of 10⁴cm⁻¹. The resistivity was in the the order of 10⁴ Ω cm and the conduction type was p-type. Fabricated solar cells, Al/ZnO/CdS/CZTS/Mo/Soda Lime Glass, showed an open-circuit voltage up to 400 mV.     

Na incorporation in Mo and CuInSe2 from production processes

Results of characterization of thin films of Mo deposited by DC magnetron sputtering on soda-lime glass (Mo/SLG) and CuInSe₂ (CIS) on Mo/SLG are presented. The primary objective of the work was to clarify the factors determining the concentration of Na in commercial-grade CIS. Mo films were deposited by three laboratories manufacturing CIS thin film solar cells. Analysis was by secondary ion mass spectrometry, scanning electron microscopy and X-ray diffraction. Changes in Mo deposition parameters in general affected the Na level but there was no obvious link to any single Mo deposition parameter. Oxygen content directly affected the Na level. The Na behavior was not obviously connected to film preferred orientation. Selenization of the Mo layers was also examined. Elemental Se vapor was found to produce significantly less selenization than H₂Se. The amount of selenization was also strongly dependent upon Mo deposition conditions, although a specific source of the change in reaction rate was not found. Na distributions in the CIS deposited on the Mo were not limited by the diffusivity of the Na. The Na concentration in the CIS was increased by annealing the Mo films both with and without intentionally added Na. The Na level in the CIS appears to be set more by the CIS deposition process than by the Na concentration in the Mo so long as the Mo contains sufficient Na to saturate the available sites in the CIS.     

Effects of substrate temperature on the structural and electrical properties of Cu(In,Ga)Se2 thin films

Polycrystalline Cu(In,Ga)Se₂ (CIGS) thin films were deposited onto soda-lime glass substrates using the three-stage process at the substrate temperature (T_sub) varying from 350 to 550 °C. The effect of T_sub on the structural and electrical properties of CIGS films has been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and Hall effect measurement. We found that the surface roughness, constituent phases, film morphologies, resistivity (ρ) and carrier concentration (N_P) of as-grown CIGS films indicated different change trends with increase in T_sub. The higher T_sub gives smooth surface, large grain size and single-phase CIGS films. The values of N_P and ρ have two demarcated regions at T_sub of 380 and 450 °C. At lower T_sub of 380 °C, larger N_P and lower ρ were dominated by the existence of secondary-phase Cu_xSe with lower resistivity. In the case of 450 °C, the obvious changes in N_P and ρ can be attributed to the sufficient Na incorporation diffused from the glass substrate. Finally, the correlation of cell parameters with T_sub was analyzed.     

TiO2 and TiO2–SiO2 thin films and powders by one-step soft-solution method: Synthesis and characterizations

Simple soft-solution method has been developed to synthesize films and powders of TiO₂ and mixed TiO₂–SiO₂ at relatively low temperatures. This method is simple and inexpensive. Furthermore, reactor can be designed for large-scale applications as well as to produce large quantities of composite powders in a single step. For the preparation of TiO₂, we used aqueous acidic medium containing TiOSO₄ and H₂O₂, which results in a peroxo-titanium precursor while colloidal SiO₂ has been added to the precursor for the formation of TiO₂–SiO₂. Post annealing at 500 °C is necessary to have anatase structure. Resulting films and powders were characterized by different techniques. TiO₂ (anatase) phase with (1 0 1) preferred orientation has been obtained. Also in TiO₂–SiO₂ mixed films and powders, TiO₂ (anatase) phase was found. Fourier transform infrared spectroscopy (FTIR) results for TiO₂ and mixed TiO₂–SiO₂ films have been presented and discussed. The method developed in this paper allowed obtaining compact and homogeneous TiO₂ films. These compact films are highly photoactive when TiO₂ is used as photo anode in an photoelectrochemical cell. Nanoporous morphology is obtained when SiO₂ colloids are added into the solution.     

Study on photocurrent of bilayers photoanodes using different combination of WO3 and Fe2O3

Bilayer photoanodes were prepared onto glass substrates (FTO) in order to improve generated photocurrents using UV-vis light by water splitting process. A comparative study of photocatalytic was performed over the films surface using Fe₂O_3, WO₃ and mixture of bicomponents (Fe₂O₃:WO₃). Different types of films were prepared using Fe₂O_3, WO₃ and bicomponents (mixture) on FTO substrates. The films were grown by sol gel method with the PEG-300 as the structure-directing agent. The photo-generated of the samples were determined by measuring the currents and voltages under illumination of UV-vis light. The morphology, structure and related composition distribution of the films have been characterized by SEM, XRD and EDX respectively. Photocurrent measurements indicated surface roughness as the effective parameter in this study. The deposited surfaces by bicomponents or mixture are flat without any feature on the surface while the deposited surfaces by WO₃ appears rough surface as small round (egg-shaped particles) and cauliflower-like. The surface deposited by Fe₂O₃ show rough no as well as WO₃ surface. The deposited surfaces by WO₃ reveal the higher value of photocurrent measurement due to surface roughness. Indeed, the roughness can be effective in increasing contact surface area between film and electrolyte and diffuse reflection (light scattering effect). The solution (Fe₂O₃:WO₃) shows the low photocurrent value in compare to WO₃ and Fe₂O₃ hat it may be due to decomposition the compound at 450 ± 1 °C to iron-tungstate Fe₂(WO₄)₃.     

Photoelectrochemical properties of spray deposited n-ZnIn2Se4 thin films

Zinc indium selenide (ZnIn₂Se₄) thin films have been prepared by spraying a mixture of an equimolar aqueous solution of zinc sulphate (ZnSO₄), indium trichloride (InCl₃), and selenourea (CH₄N₂Se), onto preheated fluorine-doped tin oxide (FTO)-coated glass substrates at optimized conditions of substrate temperature and a solution concentration. The photoelectrochemical (PEC) cell configuration of n-ZnIn₂Se₄/1 M (NaOH+Na₂S+S)/C has been used for studying the current voltage (I–V), spectral response, and capacitance voltage (C–V) characteristics of the films. The PEC study shows that the ZnIn₂Se₄ thin films exhibited n-type conductivity. The junction quality factor in dark (n_d) and light (n_l), series and shunt resistance (R_s and R_sh), fill factor (FF) and efficiency (η) for the cell have been estimated. The measured (FF) and η of the cell are, respectively, found to be 0.435% and 1.47%.     

Characterizations of composite NaNH2-NaBH4 hydrogen storage materials synthesized via ball milling

Composite NaNH₂-NaBH₄ (molar ratio of 2/1) hydrogen storage materials are prepared by a ball milling method with various ball milling times. The compositions and hydrogen generation characteristics are investigated by means of X-ray diffraction (XRD) and thermo gravimetric-differential thermal analysis (TG-DTA). The structural characteristics imply that ball milling produces a new phase of Na₃(NH₂)₂BH₄, and mechanical energy accumulated in the ball milling process may be responsible for the phase change of Na₃(NH₂)₂BH₄. TG-DTA demonstrates that the phase change temperature of the composite NaNH₂-NaBH₄ (2/1) ball milled for 16 h is 141.8 °C, and the melting point is 197.3 °C; below 400 °C, composite hydrogen storage material is mainly decomposed to give hydrogen and Na₃BN₂; while above 400 °C, the previous by-product Na₃BN₂ continues to decompose so as to give metal Na gradually.     

Sol-gel SiO2/TiO2 bilayer films with self-cleaning and antireflection properties

We report here that a facile sol-gel dip-coating technique can be used to fabricate a SiO₂/TiO₂ bilayer film with self-cleaning and antireflection properties. The bottom SiO₂ layer acts as an antireflection coating due to its lower refractive index; the top TiO₂ layer acts as a self-cleaning coating generated from its photocatalysis and photo-induced superhydrophilicity. The maximal transmittance of SiO₂/TiO₂ bilayer film at normally incident light can be reached 96.7%, independent of the high refractive index and coverage of TiO₂ nanoparticles. However, the photocatalytic activity of the bilayer film shows a close dependence on coverage of TiO₂ nanoparticles. After illuminated by ultraviolet light, the SiO₂/TiO₂ bilayer films are superhydrophilic with water contact angle less than 2°, which favors greatly the self-cleaning function of the films.