太赫兹时域光谱技术检测复合材料与金属的脱粘缺陷

基于太赫兹时域光谱技术,提出应用太赫兹脉冲成像技术检测胶接结构中的脱粘缺陷,研究泡沫材料PMI与钢板胶接结构脱粘缺陷的检测。实验采用反射模式,分别对粘合部分与脱粘部分进行数据测试,对比分析发现数据在时域和频域范围均有明显区别。对待测样品进行二维扫描,应用太赫兹时域信号的时间位置幅值、最大值、延迟时间和频域信号不同频点的幅值、所有频点幅值叠加值对待测样品进行成像。研究结果表明基于太赫兹时域光谱技术的太赫兹脉冲成像技术能够检测出泡沫材料PMI与钢板胶接结构的脱粘缺陷;应用太赫兹时域信号的时间位置幅值、最大值、延迟时间和频域信号不同频点的幅值、所有频点幅值叠加值进行成像的结果,均可以分辨出样品的脱粘缺陷;不同的数据信息的成像效果不同。     

基于超声信号的镁合金构件缺陷现代信号处理的研究

为了准确检测出合金类构件内部存在的缺陷,本文针对镁合金构件的近中心缺陷和近表面缺陷,分别采用探头垂直入射和偏心入射的超声检测方式,然后运用自适应滤波去噪信号处理方法对原始信号及特征回波信号进行去噪处理。     

与傅里叶变换有关的线性空间和代数

与三维欧氏空间一样,信号时域和频域都是希尔伯特空间。采用类比方法,将信号看作矢量,信号基函数看作基矢量,能建立时域空间和频域空间的几何直观性。可通过三维欧氏空间性质来直观理解时域空间和频域空间,而傅里叶系数本质上是信号在其基函数上的正交投影分量。信号的时域空间和频域空间是环同构,同构映射是傅里叶变换。根据希尔伯特空间性质和环同构,还可得出傅里叶变换的一些性质。     

基于合成孔径聚焦技术的激光超声无损检测方法研究

针对厚钢板内部缺陷的检测问题,利用合成孔径聚焦技术(SAFT)实现了厚钢板样品内部缺陷的定位及成像。移动脉冲激光线源在样品内激发超声纵波,利用激光测振仪在固定点探测得到超声时域B扫描信号,从时域信号中提取缺陷反射的纵波回波,对样品内部缺陷进行成像。使用有限元方法对该成像过程进行数值模拟,并通过实验对其进行验证,所获得的实验结果与数值计算结果一致。采用这一缺陷成像方法可在缺陷回波信噪比较低的情况下实现缺陷检测,并且过程简便,在激光超声检测领域具有应用价值。     

基于EMD与欧氏距离的缺陷信号识别方法

将EMD方法应用到超声缺陷信号的建模与识别中,利用EMD方法对缺陷超声回波信号进行分解,得到若干个IMF,然后对包含故障信息的IMF作时域与频域分析,求出缺陷信号的一组特征值,分析特征值并构造出识别缺陷信号的特征向量。最后通过欧氏距离公式判别待测信号与已知缺陷信号间特征向量的近似程度(距离大小)来辨别信号的缺陷类型。通过试验表明这种方法可以有效识别信号的缺陷类型。     

柱体结构中缺陷形状反演的实验研究

基于Born近似方法对水泥柱体结构中的缺陷形状重构进行了实验研究。实验结果表明,采用自制的压电纵波直探头和Born近似理论可对柱体结构中缺陷形状进行重构,且重构的缺陷尺寸与缺陷的实际尺寸基本一致。建立了缺陷的结构特征与缺陷的散射回波幅值间的对应关系,并通过实验对该方法的可行性进行了实测。结果表明,结构中缺陷的形状与所测缺陷的散射回波幅值间有很好的对应关系,可用实验测得缺陷反射回波幅值对柱体结构中缺陷形状进行重构。     

激光切割光辐射与切割质量关系的研究

为了研究激光切割过程光信号与切割质量的关系,搭建了以切割前沿光辐射作为检测参量的实时检测系统,对切割前沿光辐射的时、频域信号进行了试验研究,得到了不同参数下光信号的变化规律。时域分析表明,无缺陷式样对应的标准方差较低;与无缺陷切割相比,过烧缺陷对应的光信号具有较低的强度和较高的标准方差;挂渣缺陷具有较高的强度和标准方差。频域分析表明,低速切割,光信号主频与切缝表面波纹频率一致;高速无缺陷切割无明显主频;挂渣缺陷具有明显的低频波动。结果表明,燃烧循环理论不仅是切割面波纹形成的主要因素,也是光信号主频产生的主要原因。     

光强度调制-直接检测系统的频域均衡技术研究

研究了单载波光IM-DD(强度调制-直接检测)系统的频域均衡方案,通过分析时域与频域单载波信号ISI(码间干扰)的关系,提出一种通过时域截取的方法减弱噪声影响的均衡器抽头更新方式,并通过仿真对截取位置和符号个数的选取进行了优化。仿真结果表明,10Gbit/s NRZ-OOK(非归零码-开关键控)信号经过100km传输后,相对于传统时域均衡方案,频域均衡方案所需要的光信噪比需求可降低约2dB。     

自由空间中二维电磁目标的时域非线性反演

提出一种基于电磁等效原理的一组积分方程，应用变分方法和傅立叶变换理论，得到了时域散射场与目标电磁参数之间非线性关系的频域表示式，即反演自由空间中二维电磁目标的时域非线性迭代方法的反演方程。列举了一些典型的数值反演实例，对反演性能进行了多方面的考察，指出本法是一种具有良好反演性能的时域非线性反演方法。     

基于改进Morlet小波的超声回波信号处理

粘结复合材料的超声回波检测信号夹杂了大量的噪声,完全淹没了有用的裂纹缺陷信息,基于时域或频域的分析方法难以判断其是否存在缺陷.在对信号作多尺度分析的基础上,改进了Morlet小波,并基于改进Morlet小波对信号进行了各种分析.当取多个尺度参数时,基于改进Morlet小波变换得到的小波系数都包含有缺陷信号的频率成分,这样便解决了多分辨率分析时多尺度小波系数在分析窄频带缺陷信号时的不足.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.