有源光纤环脉冲复制器工作特性分析

为了研究向全光等效时间采样系统提供被采样一致脉冲序列的技术,讨论了使用有源光纤环脉冲复制器进行脉冲复制的方法。分析了利用环内注入直流光实现对复制器非线性增益与放大自发辐射噪声所导致误差的抑制。通过实验得到了复制器误差随环内注入直流光的变化趋势、复制器复制稳定性和误差分布的测量结果。结果表明,利用有源光纤环脉冲复制器可以有效地产生被采样等效时间周期脉冲序列。     

基于粒子群优化算法的级联喇曼光纤放大器

为了在较高的净增益条件下实现最小化喇曼增益平坦度,采用粒子群优化算法对As-S光纤与碲基光纤级联的光纤放大器各抽运光参量优化配置的方法,进行了理论分析和实验验证。结果表明,应用上述方法对得到的3组优化结果进行对比,在带宽为40nm的级联喇曼光纤放大器上,达到了平均增益为53.25dB、增益平坦度为0.30dB的较高性能。与传统光纤放大器和现有的级联光纤放大器相比,使用粒子群优化算法对各抽运光的功率和波长优化后,会使级联光纤放大器性能明显提高,这在未来的光纤通信中具有一定实用价值。     

掺铒光纤放大器放大高速ps半导体激光脉冲的研究

理论与实验研究了掺银光纤放大器放大高速PS半导体激光脉冲的行为，给出了放大高速光脉冲时放大器的增益特性与光脉冲占空比之间的关系，占空比越大，输出光脉冲的峰值功率越小，理论与实验结果较好地一致。     

全光纤结构高增益脉冲光纤放大器的实验研究

为了探讨多级级联掺镱光纤放大器的脉冲放大特性,采用主振功率放大技术(MOPA),实验研究了3级级联、全光纤结构的高增益脉冲激光放大器。通过优化各放大级增益光纤的长度和抽运光功率的大小,在保证高放大增益的同时,抑制了掺镱光纤中自发辐射光的自生激光振荡,并对第2放大级进行了结构优化。在脉冲激光放大过程中实现了中心波长1064nm、脉冲宽度19ns、重复频率5kHz、峰值功率3.8kW、总放大增益达43.8dB的稳定激光输出。同时,制作完成了1台结构紧凑、全光纤结构的脉冲光纤放大器样机,对重复频率1Hz的低频脉冲信号进行了放大实验,也得到了43.2dB的输出信号增益。结果表明,本脉冲光纤放大器对低频脉冲信号有很好的放大效果。     

掺Yb双包层光纤放大器的瞬态增益特性研究

建立了简化的瞬态增益基本模型,数值计算了低频光脉冲经过掺Yb双包层光纤放大器(掺Yb双包层光纤放大器)后的波形.在实验中对种子源放大的掺Yb双包层光纤放大器的脉冲特性进行了分析,证实了其瞬态增益的低频响应特性.     

光纤长度优化的高功率铒镱共掺光纤放大器

为了研究不同增益光纤长度下1555nm高功率光纤放大器的输出功率,采用两级混合结构的方法,用掺铒光纤放大器和双包层铒镱共掺光纤放大器分别作为1级预放大器和2级主放大器。掺铒光纤放大器对信号光进行预放大,并提高放大器的信噪比;双包层铒镱共掺光纤放大器为主放大器,其双包层结构可以把更多的多模抽运光耦合进系统。对铒镱共掺光纤的最佳长度做了理论分析和实验验证,在信号光功率为10mW、掺铒光纤放大器的抽运功率为318.58mW、双包层铒镱共掺光纤放大器的抽运功率为11.71W、增益光纤长度为14m时,输出功率取得了2.11W的实验数据。在分析输出信号光谱时发现,L波段附近有放大自发辐射谱出现,这是选择的增益光纤过长导致的。结果表明,在光功率和信号光功率一定时,光纤放大器有一个最佳的光纤长度。这一结果对研究光纤放大器的高功率输出是有帮助的。     

利用脉冲复制环提高纳秒脉冲单次测量的动态范围

提出了一种提高纳秒光脉冲单次测量动态范围的方法,其中光纤脉冲复制环用来产生时域上幅度呈指数递减的脉冲复制串,有效环增益为0.955。经软件补偿脉冲复制串使其具有相同的幅度,然后累加平均前18个脉冲,能够将注入的单发纳秒光脉冲动态范围提高2.74倍,这样就可以实现利用光电探测管和示波器对100:1高对比度的惯性约束核聚变(ICF)脉冲测量。     

宽带铋基掺铒光纤放大器的增益箝制研究

应用于动态通信网络中的光放大器需要恒定的信号增益.为此,设计了一个基于环形激光腔结构的宽带铋基掺铒光纤放大器(Bi-EDFA),进行了宽带Bi-EDFA信号增益箝制特性的理论研究.结果表明:通过将放大器输出的一个前向放大自发辐射(ASE)噪声光反馈到输入端,可以实现对1.53 μm波段传输信号的增益箝制.环路损耗越小,...     

EDFA放大高速超短光脉冲的研究

实验研究了掺铒光纤放大器放大高速超短光脉冲的行为，给出了放大高速光脉冲时效大器的增益特性与光脉冲空占比之间的关系，并与实验结果进行了比较，理论与实验较好地一致。     

光脉冲光纤周期复制技术研究

针对常用的多路高速光脉冲复制系统可能的实现形式进行了研究,根据各种应用中所需的插入损耗、输出脉冲周期性与功率稳定性等性能要求,对多种光纤光脉冲复制结构的特点进行了分析比较.通过对各种结构的输出脉冲功率、周期性及其影响因素的理论分析,论述了使各种结构的输出脉冲优化的可能性与方法.指出了有源循环式光纤延迟脉冲复制器适合于产生重复周期准确、输出功率大的光脉冲序列.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.