共查询到20条相似文献，搜索用时 15 毫秒
1.
Alejandro Heredia Vincent Meunier Igor K. Bdikin José Gracio Nina Balke Stephen Jesse Alexander Tselev Pratul K. Agarwal Bobby G. Sumpter Sergei V. Kalinin Andrei L. Kholkin 《Advanced functional materials》2012,22(14):2996-3003
Ferroelectrics are multifunctional materials that reversibly change their polarization under an electric field. Recently, the search for new ferroelectrics has focused on organic and bio‐organic materials, where polarization switching is used to record/retrieve information in the form of ferroelectric domains. This progress has opened a new avenue for data storage, molecular recognition, and new self‐assembly routes. Crystalline glycine is the simplest amino acid and is widely used by living organisms to build proteins. Here, it is reported for the first time that γ‐glycine, which has been known to be piezoelectric since 1954, is also a ferroelectric, as evidenced by local electromechanical measurements and by the existence of as‐grown and switchable ferroelectric domains in microcrystals grown from the solution. The experimental results are rationalized by molecular simulations that establish that the polarization vector in γ‐glycine can be switched on the nanoscale level, opening a pathway to novel classes of bioelectronic logic and memory devices. 相似文献
2.
Yuri A. Genenko Sergey Zhukov Sergey V. Yampolskii Jörg Schütrumpf Robert Dittmer Wook Jo Hans Kungl Michael J. Hoffmann Heinz von Seggern 《Advanced functional materials》2012,22(10):2058-2066
Universal scaling features of polarization switching are established experimentally in rather different classes of disordered ferroelectrics: in well‐studied lead‐zirconate titanate (PZT) ferroelectrics, in recently synthesized Cu‐stabilized 0.94(Bi1/2Na1/2)TiO3–0.06BaTiO3 (BNT‐BT) relaxor ferroelectrics, and in classical organic ferroelectrics P(VDF‐TrFE). These scaling properties are explained by an extended concept of an inhomogeneous field mechanism (IFM) of polarization dynamics in ferroelectrics. Accordingly, disordered ferroelectrics exhibit a wide spectrum of characteristic switching times due to a statistical distribution of values of the local electric field. How this distribution can be extracted from polarization measurements is demonstrated. Generally, it is shown that the polarization response is primarily controlled by the statistical characteristics of disorder rather than by a temporal law of the local polarization switching. 相似文献
3.
Yunseok Kim Xiaoli Lu Stephen Jesse Dietrich Hesse Marin Alexe Sergei V. Kalinin 《Advanced functional materials》2013,23(32):3971-3979
Ferroelectric polarization switching is sensitively affected by phenomena on multiple length scales, giving rise to complex voltage‐ and time‐controlled behaviors. Here, spatially resolved switching dynamics in ferroelectric nanocapacitors are explored as a function of voltage pulse time and magnitude. A remarkable persistence of formal macroscopic scaling laws for polarization switching based on classical models down to nanoscale volumes is observed. These observations illustrate the persistence of the return point memory in the material and allow the thermodynamic parameters of defects controlling switching to be estimated. 相似文献
4.
Yunseok Kim Xiaoli Lu Stephen Jesse Dietrich Hesse Marin Alexe Sergei V. Kalinin 《Advanced functional materials》2013,23(32):3945-3945
5.
Liyan Wu Aaron M. Burger Andrew L. Bennett-Jackson Jonathan E. Spanier Peter K. Davies 《Advanced Electronic Materials》2021,7(5):2100144
Ferroelectric materials, which exhibit switchable polarization, are potential candidates for photovoltaic applications owing to their intriguing charge carrier separation mechanism associated with polarization and breaking of inversion symmetry. To overcome the low photocurrent of ferroelectrics, extensive efforts have focused on reducing their bandgaps to increase the optical absorption of the solar spectrum and thus the power conversion efficiency. Here, a new avenue of enhancing photovoltaic performance via engineering the polarization across a morphotropic phase boundary (MPB) is reported. Tetragonal compositions in the vicinity of the MPB in a PbTiO3-Bi(Ni1/2Ti1/2)O3 solid solution are shown to generate up to 3.6 kV cm−1 photoinduced electric field and 6.2 µA cm−2 short-circuit photocurrent, multiple times higher than its pseudocubic counterpart under the same illumination conditions with excellent polarization retention. This enhancement allows the investigation of the correlation between the polarization switching and photovoltaic switching, which enables a controllable multistate photocurrent. Combined with a bandgap of 2.2 eV, this material exhibits a sizable photoresponse over a broad spectral range. These findings provide a new approach to improve the photovoltaic performance of ferroelectric materials and can expand their potential applications in optoelectronic devices. 相似文献
6.
7.
8.
《Advanced Electronic Materials》2017,3(10)
Monoclinic phases, as intermediate phases at the morphotropic phase boundary, have been considered as the origin of high piezoelectricity in various piezoelectric systems. However, those monoclinic phases have seldom been experimentally observed at the phase boundary in lead‐free (K,Na)NbO3 (KNN)‐based materials. This work shows that KNN epitaxial thin films demonstrate a monoclinic MC phase stabilized by elastic strain at room temperature, which is identified by both synchrotron X‐ray reciprocal space mapping and piezoresponse force microscopy. It is revealed that the piezoelectricity is greatly enhanced at 170 °C due to the monoclinic MC–MA phase boundary. The discovery of monoclinic phases in this work may open an avenue for developing a new thermotropic phase boundary in KNN‐based materials. The results also provide a guide for the exploration of high piezoelectricity driven by monoclinic phases in lead‐free piezoelectric materials. 相似文献
9.
Kévin Alhada–Lahbabi;Damien Deleruyelle;Brice Gautier; 《Advanced Electronic Materials》2024,10(5):2300744
Ferroelectric thin films hold significant promise in various nanoelectronic applications, demanding precise control over their domain structures. While electrical field-driven polarization switching is currently employed, it often leads to undesirable side effects. In contrast, mechanical switching offers a voltage-free alternative but faces challenges in thicker films. Recent breakthroughs have demonstrated stable mechanical switching in films up to 200 nm thick, attributed to the presence of nanocavities. These nanoscale voids are believed to facilitate domain transitions, serving as essential pinning centers. In this study, mechanical domain switching in thick ferroelectric films is investigated using phase-field modeling, with a specific focus on evaluating the influence of nanocavities on domain stability. The effects of cavity parameters (size, depth, and dielectric properties) on mechanical switching stability under various applied pressures are systematically examined. The findings reveal the intricate interplay between these factors and outline the conditions for stable mechanical switching. Furthermore, phase-field simulations are employed to showcase the energetic mechanisms governing nanocavity-assisted mechanical switching, while also highlighting the pivotal role of these defects as pinning centers. This investigation elucidates the nanocavity-assisted mechanical control of polarization and the potential for optimizing thin film design through nanocavity engineering, thus enabling mechanical switching across substantial film thicknesses. 相似文献
10.
Shania Rehman Honggyun Kim Harshada Patil Kalyani D. Kadam Rizwan Ur Rehman Sagar Jamal Aziz Doo-Seung Um Muhammad Farooq Khan Deok-kee Kim 《Advanced Electronic Materials》2021,7(6):2001237
Electronic devices with simultaneous manifestation of multiphysical properties are of great interest due to their possible application in multifunctional devices. In the present study, simultaneous execution of negative differential resistance (NDR) effect, current rectification (≈105), and resistive switching characteristics (≈103) are demonstrated in BaTiO3/CeO2 heterostructure. Although the negative differential effect has gained huge attention, its instability and poor reproducibility at room temperature are the main obstacles to its possible application in electronic devices. However, in this report, the NDR is observed even after hundreds of cycles in BaTiO3/CeO2 heterostructure at 300 K. For a detailed analysis of the NDR effect, AC conductance spectroscopy is performed, which reveals that the presence of NDR is associated with trapping/detrapping of charge carriers at interface states formed at the BaTiO3/CeO2 interface. In addition, the resistive switching and rectification effect are demonstrated due to a barrier at the BaTiO3/CeO2 interface, which can be strongly modulated by thickness (20, 50, and 80 nm) based ferroelectric polarization of BaTiO3. However, the results show that the remarkable performance of these devices makes them a potential candidate for application in multifunctional devices. 相似文献
11.
Low‐cost printable field effect transistors (FETs) are typically associated with slow switching characteristics. Dynamic response of polymer field effect transistors (PFETs) is a manifestation of time scales involved in processes such as dielectric polarization, structural relaxation, and transport via disordered‐interfacial states. A range of dielectrics and semiconductors are studied to arrive at a parameter which serves as a figure of merit and quantifies the different processes contributing to the switching response. A cross‐over from transport limiting factors to dielectric limiting factors in the dynamics of PFETs is observed. The dielectric limited regime in the PFET dynamics is tapped in to explore high speed processes, and an enhancement of switching speed by three orders of magnitude (from 300 μs to 400 ns) is observed at channel lengths which can be accessed by low cost printing methods. The device structure utilizes polymer‐ferroelectrics (FE) as the dielectric layer and involves a fabrication‐procedure which assists in circumventing the slow dynamics within the bulk of FE. This method of enhancing the dynamic response of PFETs is universally applicable to all classes of disordered‐FE. 相似文献
12.
This work reports a resistive switching effect observed at rectifying Pt/Bi1–δFeO3 interfaces and the impact of Bi deficiencies on its characteristics. Since Bi deficiencies provide hole carriers in BiFeO3, Bi‐deficient Bi1–δFeO3 films act as a p‐type semiconductor. As the Bi deficiency increased, a leakage current at Pt/Bi1–δFeO3 interfaces tended to increase, and finally, rectifying and hysteretic current–voltage (I–V) characteristics were observed. In I–V characteristics measured at a voltage‐sweep frequency of 1 kHz, positive and negative current peaks originating from ferroelectric displacement current were observed under forward and reverse bias prior to set and reset switching processes, respectively, suggesting that polarization reversal is involved in the resistive switching effect. The resistive switching measurements in a pulse‐voltage mode revealed that the switching speed and switching ratio can be improved by controlling the Bi deficiency. The resistive switching devices showed endurance of >105 cycles and data retention of >105 s at room temperature. Moreover, unlike conventional resistive switching devices made of metal oxides, no forming process is needed to obtain a stable resistive switching effect in the ferroelectric resistive switching devices. These results demonstrate promising prospects for application of the ferroelectric resistive switching effect at Pt/Bi1–δFeO3 interfaces to nonvolatile memory. 相似文献
13.
Atomically thin α-In2Se3: an emergent two-dimensional room temperature ferroelectric semiconductor 
下载免费PDF全文
下载免费PDF全文 Room temperature ferroelectric thin films are the key element of high-density nonvolatile memories in modern electronics. However, with the further miniaturization of the electronic devices beyond the Moore’s law, conventional ferroelectrics suffer great challenge arising from the critical thickness effect, where the ferroelectricity is unstable if the film thickness is reduced to nanometer or single atomic layer limit. Two-dimensional(2D) materials, thanks to their stable layered structure, saturate interfacial chemistry, weak interlayer couplings, and the benefit of preparing stable ultra-thin film at 2D limit, are promising for exploring 2D ferroelectricity and related device applications. Therefore, it provides an effective approach to overcome the limitation in conventional ferroelectrics with the study of 2D ferroelectricity in van der Waals(vdW) materials. In this review article,we briefly introduce recent progresses on 2D ferroelectricity in layered vdW materials. We will highlight the study on atomically thin α-In2Se3, which is an emergent ferroelectric semiconductor with the coupled in-plane and out-of-plane ferroelectricity. Furthermore, two prototype ferroelectric devices based on ferroelectric α-In2Se3 will also be reviewed. 相似文献
14.
A first‐principles‐based effective Hamiltonian is developed and employed to investigate finite‐temperature structural properties of a prototype of perovskite halides, that is CsPbI3. Such simulations, when using first‐principles‐extracted coefficients, successfully reproduce the existence of an orthorhombic Pnma state and its iodine octahedral tilting angles around room temperature. However, they also yield a direct transformation from Pnma to cubic upon heating, unlike measurements that reported the occurrence of an intermediate long‐range‐tilted tetragonal P4/mbm phase in‐between the orthorhombic and cubic phases. Such disagreement, which may cast some doubts about the extent to which first‐principle methods can be trusted to mimic hybrid perovskites, can be resolved by “only” changing one short‐range tilting parameter in the whole set of effective Hamiltonian coefficients. In such a case, some reasonable values of this specific parameter result in the predictions that i) the intermediate P4/mbm state originates from fluctuations over many different tilted states; and ii) the cubic phase is highly locally distorted and develops strong transverse antiphase correlation between first‐nearest neighbor iodine octahedral tiltings, before undergoing a phase transition to P4/mbm under cooling. 相似文献
15.
16.
Traditionally thermodynamically bistable ferroic materials are used for nonvolatile operations based on logic gates (e.g., in the form of field effect transistors). But, this inherent bistability in these class of materials limits their applicability for adaptive operations. Emulating biological synapses in real materials necessitates gradual tuning of resistance in a nonvolatile manner. Even though in recent years few observations have been made of adaptive devices using a ferroelectric, the principal question as to how to make a ferroelectric adaptive has remained elusive in the literature. Here, it is shown that by locally controlling the nucleation energy distribution at the ferroelectric–electrode interface multiple‐addressable states in a ferroelectric can be created, which is necessary for adaptive/synaptic applications. This is realized by depositing a layer of nonswitchable ZnO on top of thin film ferroelectric PbZr x Ti(1– x )O3. This methodology of interface‐engineered ferroelectric should enable realising brain‐like adaptive/synaptic memory in complementary metal‐oxide‐semiconductor (CMOS) devices. Furthermore, the temporally stable multistability in ferroelectrics should enable the designing of multistate memory and logic devices. 相似文献
17.
18.
19.
为了研究垂直腔面发射激光器偏振转换特性,基于自旋反转模型,数值研究了正交光注入下1550nm垂直腔面发射激光器频率诱导偏振开关及双稳特性。结果表明,在正交光注入下,连续改变注入光与激光器光场内x线性极化模的频率失谐可诱导产生两类偏振开关和偏振双稳现象,且注入光强与偏振电流的变化都显著影响双稳宽度和激光器的输出特性;合理选择操作条件,可实现对1550nm垂直腔面发射激光器频率诱导偏振开关及双稳的控制。这一结果对垂直腔面发射激光器在全光开关和全光存储等领域的应用具有参考价值。 相似文献
20.
对属于铁电体的热释电体从德文希尔热力学理论模型出发,导出了热释电系数和自发极化强度的关系Ｐ／Ｘ＝Ｐｓ／Ｃ测量了ＬＵＴＧＳ晶体的ｐ／Ｘ和Ｐｓ／Ｃ分别随温度的变化曲线,发现两曲线有较好的一致性,但仍有差异。结合德文希尔热力学理论模型分析了其原因,指出了该关系对铁电体材料热释电性提高的指导意义。 相似文献