Printable Organic‐Inorganic Nanoscale Multilayer Gate Dielectrics for Thin‐Film Transistors Enabled by a Polymeric Organic Interlayer

Here, a new approach to the layer‐by‐layer solution‐processed fabrication of organic/inorganic hybrid self‐assembled nanodielectrics (SANDs) is reported and it is demonstrated that these ultrathin gate dielectric films can be printed. The organic SAND component, named P‐PAE, consists of polarizable π‐electron phosphonic acid‐based units bound to a polymeric backbone. Thus, the new polymeric SAND (PSAND) can be fabricated either by spin‐coating or blade‐coating in air, by alternating P‐PAE, a capping reagent layer, and an ultrathin ZrOx layer. The new PSANDs thickness vary from 6 to 15 nm depending on the number of organic‐ZrOx bilayers, exhibit tunable film thickness, well‐defined nanostructures, large electrical capacitance (up to 558 nF cm^?2), and good insulating properties (leakage current densities as low as 10^?6 A cm^?2). Organic thin‐film transistors that are fabricated with representative p‐/n‐type organic molecular/polymeric semiconducting materials, function well at low voltages (<3.0 V). Furthermore, flexible TFTs fabricated with PSAND exhibit excellent mechanical flexibility and good stress stability, offering a promising route to low operating voltage flexible electronics. Finally, printable PSANDs are also demonstrated and afford TFTs with electrical properties comparable to those achieved with the spin‐coated PSAND‐based devices.     

Reversible Switching Phenomenon in Diarylethene Molecular Devices with Reduced Graphene Oxide Electrodes on Flexible Substrates

Photoswitching molecular electronic devices with reduced graphene oxide (rGO) top electrodes on flexible substrates are fabricated and characterized. It has been reported previously that diarylethene molecular devices with poly‐(3,4‐ethylenedioxythiophene) stabilized with poly‐(4‐styrenesulfonic acid)/Au top electrodes can hold two stable electrical conductance states when the devices are exposed to UV or visible light during device fabrication. However, those devices fail to show the reversible switching phenomenon in response to illumination after device fabrication. By employing conducting and transparent rGO top electrodes, it is demonstrated that the diarylethene molecular devices show a reversible switching phenomenon, i.e., the fabricated devices change their conductance state in response to the alternating illumination with UV and visible light. Furthermore, the molecular devices with rGO top electrodes also exhibit good longtime stability and reliable electrical characteristics when subjected to various mechanical stresses (bending radius down to 5 mm and bending cycle over 10⁴).     

High Performance Flexible Nonvolatile Memory Based on Vertical Organic Thin Film Transistor

Flexible floating‐gate organic transistor memory (FGOTM) is a potential candidate for emerging memory technologies. Unfortunately, conventional planar FGOTM suffers from weak driving ability and insufficient mechanical flexibility, which limits its commercial application. In this work, a novel flexible vertical FGOTM (VFGOTM) is reported. Benefitting from new vertical architecture, VFGOTM provides ultrashort channel length to afford an extremely high current density. Meanwhile, VFGOTM devices exhibit excellent memory performance and outstanding retention property. The memory properties of VFGOTM devices are comparable or even better than traditional planar FGOTM and much better than the reported organic nonvolatile memory with vertical transistor structures. More importantly, organic nonvolatile memory with vertical transistor structures is investigated for the first time on a flexible substrate. The results show that VFGOTM architecture allows vertical current flow across the channel layer to effectively eliminate the effect of mechanical bending during current transport, which significantly improves the mechanical stability of the flexible VFGOTM. Hence, with a combination of excellent driving ability, memory performance, and mechanical stability, VFGOTM devices meet the practical requirements for high performance memory applications, which have great potential for the application in a wide range of flexible and wearable electronics.     

Enhancement of Field‐Effect Mobility Due to Surface‐Mediated Molecular Ordering in Regioregular Polythiophene Thin Film Transistors

With the aim of enhancing the field‐effect mobility by promoting surface‐mediated two‐dimensional molecular ordering in self‐aligned regioregular poly(3‐hexylthiophene) (P3HT) we have controlled the intermolecular interaction at the interface between P3HT and the insulator substrate by using self‐assembled monolayers (SAMs) functionalized with various groups (–NH₂, –OH, and –CH₃). We have found that, depending on the properties of the substrate surface, the P3HT nanocrystals adopt two different orientations—parallel and perpendicular to the insulator substrate—which have field‐effect mobilities that differ by more than a factor of 4, and that are as high as 0.28 cm² V^–1 s^–1. This surprising increase in field‐effect mobility arises in particular for the perpendicular orientation of the nanocrystals with respect to the insulator substrate. Further, the perpendicular orientation of P3HT nanocrystals can be explained by the following factors: the unshared electron pairs of the SAM end groups, the π–H interactions between the thienyl‐backbone bearing π‐systems and the H (hydrogen) atoms of the SAM end groups, and interdigitation between the alkyl chains of P3HT and the alkyl chains of the SAMs.     

The Influence of Film Morphology in High‐Mobility Small‐Molecule:Polymer Blend Organic Transistors

Organic field‐effect transistors (OFETs) based upon blends of small molecular semiconductors and polymers show promise for high performance organic electronics applications. Here the charge transport characteristics of high mobility p‐channel organic transistors based on 2,8‐difluoro‐5,11‐bis(triethylsilylethynyl) anthradithiophene:poly(triarylamine) blend films are investigated. By simple alteration of the film processing conditions two distinct film microstructures can be obtained: one characterized by small spherulitic grains (SG) and one by large grains (LG). Charge transport measurements reveal thermally activated hole transport in both SG and LG film microstructures with two distinct temperature regimes. For temperatures >115 K, gate voltage dependent activation energies (E_A) in the range of 25–60 meV are derived. At temperatures <115 K, the activation energies are smaller and typically in the range 5–30 meV. For both film microstructures hole transport appears to be dominated by trapping at the grain boundaries. Estimates of the trap densities suggests that LG films with fewer grain boundaries are characterized by a reduced number of traps that are less energetically disordered but deeper in energy than for small SG films. The effects of source and drain electrode treatment with self‐assembled monolayers (SAMs) on current injection is also investigated. Fluorinated thiol SAMs were found to alter the work function of gold electrodes by up to ～1 eV leading to a lower contact resistance. However, charge transport analysis suggests that electrode work function is not the only parameter to consider for efficient charge injection.     

Design of Novel Dielectric Surface Modifications for Perylene Thin‐Film Transistors

Dielectric surface modifications (DSMs) can improve the performance of organic thin‐film transistors (OTFTs) significantly. In order to gain a deeper understanding of this performance enhancement and to facilitate high‐mobility transistors, perylene based devices utilizing novel dielectric surface modifications have been produced. Novel DSMs, based on derivates of tridecyltrichlorosilane (TTS) with different functional end‐groups as well as polymeric dielectrics have been applied to tailor the adhesion energy of perylene. The resulting samples were characterized by electronic transport measurements, scanning probe microscopy, and X‐ray diffraction (XRD). Measurements of the surface free energy of the modified dielectric enabled the calculation of the adhesion energy of perylene upon these novel DSMs by the equation‐of‐state approach. These calculations demonstrate the successful tailoring of the adhesion energy. With these novel DSMs, perylene thin‐films with a superior film quality were produced, which enabled high‐performance perylene‐based OTFTs with high charge‐carrier mobility.     

Influence of Thiol Self‐Assembled Monolayer Processing on Bottom‐Contact Thin‐Film Transistors Based on n‐Type Organic Semiconductors

The performance of bottom‐contact thin‐film transistor (TFT) structures lags behind that of top‐contact structures owing to the far greater contact resistance. The major sources of the contact resistance in bottom‐contact TFTs are believed to reflect a combination of non‐optimal semiconductor growth morphology on the metallic contact surface and the limited available charge injection area versus top‐contact geometries. As a part of an effort to understand the sources of high charge injection barriers in n‐channel TFTs, the influence of thiol metal contact treatment on the molecular‐level structures of such interfaces is investigated using hexamethyldisilazane (HMDS)‐treated SiO₂ gate dielectrics. The focus is on the self‐assembled monolayer (SAM) contact surface treatment methods for bottom‐contact TFTs based on two archetypical n‐type semiconductors, α,ω‐diperfluorohexylquarterthiophene (DFH‐4T) and N,N′bis(n‐octyl)‐dicyanoperylene‐3,4:9,10‐bis(dicarboximide) (PDI‐8CN₂). TFT performance can be greatly enhanced, to the level of the top contact device performance in terms of mobility, on/off ratio, and contact resistance. To analyze the molecular‐level film structural changes arising from the contact surface treatment, surface morphologies are characterized by atomic force microscopy (AFM) and scanning tunneling microscopy (STM). The high‐resolution STM images show that the growth orientation of the semiconductor molecules at the gold/SAM/semiconductor interface preserves the molecular long axis orientation along the substrate normal. As a result, the film microstructure is well‐organized for charge transport in the interfacial region.     

Single Component Self‐Assembled Monolayers of Aromatic Azo‐Biphenyl: Influence of the Packing Tightness on the SAM Structure and Light‐Induced Molecular Movements

Aiming at modulating the packing density within functional self‐assembled monolayers (SAMs), two azo‐biphenyl derivatives AZO1 and AZO2 comprising a terminal sulfur anchor group have been designed and synthesized. While AZO1 allows for a coplanar arrangement of both biphenyl subunits, additional steric repulsion due to two methyl side groups attached to the footing biphenyl of AZO2 results in an increased intermolecular distance within the SAM, providing additional free volume. SAMs of both derivatives on gold and platinum substrates have been formed and thoroughly investigated by photoelectron (XPS) and near‐edge absorption fine structure (NEXAFS) spectroscopy as well as cyclic voltammetry and scanning tunneling microscopy. These measurements confirmed the formation of tightly packed SAMs for AZO1 , while AZO2 formed SAMs consisting of less organized and more loosely packed molecules. Optical investigations of both azo derivatives in solution as well as their SAMs displayed efficient photoisomerization in solution and in SAMs. Comparable maximal cis/trans ratios of ca. 0.9 have been observed in all cases upon irradiation at λ = 370 and 360 nm for AZO1 and AZO2 , respectively. The thermally induced cis → trans back reaction on AZO1 was found to be slower by a factor of 3 in SAMs as compared to solution, while AZO2 displayed comparable rates of the back reaction in both environments. This behavior can be explained by the different nature of molecular isomerization in the two SAM systems: whereas the isomerization in AZO1 SAMs takes place in a highly coordinated, collective way and involves many adjacent molecules, AZO2 species behave rather individually even packed in SAMs, such that their isomerization process is similar in SAMs and in solutions.     

Mechanical Buckling: Mechanics,Metrology, and Stretchable Electronics

Mechanical buckling usually means catastrophic failure in structural mechanics systems. However, controlled buckling of thin films on compliant substrates has been used to advantage in diverse fields such as micro‐/nanofabrication, optics, bioengineering, and metrology as well as fundamental mechanics studies. In this Feature Article, a mechanical buckling model is presented, which sprang, in part, from the buckling study of high‐quality, single‐crystalline nanomaterials. To check the mechanical‐buckling phenomenon down to the nano‐/molecular scale, well‐aligned single‐walled carbon nanotube arrays and cross linked carbon‐based monolayers are transferred from growth substrate onto elastomeric substrate and then they are buckled into well‐defined shapes that are amenable to quantitative analysis. From this nano‐ or molecular‐scale buckling, it is shown that the mechanical moduli of nanoscale materials can easily be determined, even using a model based on continuum mechanics. In addition, buckling phenomena can be utilized for the determination of mechanical moduli of organic functional materials such as poly(3‐hexylthiophene) (P3HT) and P3HT/6,6‐phenyl‐C₆₁‐butyric acid methyl ester (PCBM) composite, which are widely used for organic transistors and organic photovoltaics. The results provide useful information for the realization of flexible and/or stretchable organic electronics. Finally, the fabrication and applications of “wavy, stretchable” single‐crystal Si electronics on elastomeric substrates are demonstrated.     

Systematic Control of Nucleation Density in Poly(3‐Hexylthiophene) Thin Films

While molecular ordering via crystallization is responsible for many of the impressive optoelectronic properties of thin‐film semiconducting polymer devices, crystalline morphology and its crucial influence on performance remains poorly controlled and is usually studied as a passive result of the conditions imposed by film deposition parameters. A method for systematic control over crystalline morphology in conjugated polymer thin films by very precise control of nucleation density and crystal growth conditions is presented. A precast poly(3‐hexylthiophene) film is first swollen into a solution‐like state in well‐defined vapor pressures of a good solvent, while the physical state of the polymer chains is monitored using in situ UV–vis spectroscopy and ellipsometry. Nucleation density is selected by a controlled deswelling of the film or by a self‐seeding approach using undissolved crystalline aggregates that remain in the swollen film. Nucleation densities ranging successively over many orders of magnitude are achieved, extending into the regime of spherulitic domains 10 to 100 μm in diameter, a length scale highly relevant for typical probes of macroscopic charge transport such as field‐effect transistors. This method is presented as a tool for future systematic study of the structure‐function relation in semicrystalline semiconducting polymers in a broad range of applications.     

A 4 V Operation,Flexible Braille Display Using Organic Transistors,Carbon Nanotube Actuators,and Organic Static Random‐Access Memory

A sheet‐type Braille display operating at 4 V has been successfully fabricated by integrating organic an static random‐access memory (SRAM) array with carbon nanotube (CNT)‐based actuators that are driven by organic thin‐film transistors (control‐TFTs). The on current of organic control‐TFTs that drive CNT actuators exceeds 3 mA, the mobility exceeds 1 cm² V^?1s^?1, and the on/off ratio exceeds 10⁵ at an operational voltage of 3 V. By adjusting the process time for the formation of the aluminum oxide dielectrics, the threshold voltage of the organic TFTs can be systematically controlled. This technique leads to an improved static noise margin of the SRAM and enables its stable operation with a short programming time of 2 ms at a programming voltage of 2 V. As a demonstration of the operation of one actuator with one control‐TFT and SRAM: the displacement of actuator exceeds 300 μm at an operation voltage of 4 V, which is large enough for a blind person to recognize the pop‐up of braille dots. Integrating the SRAM array reduces the frame rate of a 12 dot × 12 dot display from 1/21.6 s to 1/2.9 s.     

Effects of Arylene Diimide Thin Film Growth Conditions on n‐Channel OFET Performance

A series of eight perylene diimide (PDI)‐ and naphthalene diimide (NDI)‐based organic semiconductors was used to fabricate organic field‐effect transistors (OFETs) on bare SiO₂ substrates, with the substrate temperature during film deposition (T_d) varied from 70–130 °C. For the N,N′‐n‐octyl materials that form highly ordered films, the mobility (µ) and current on‐off ratio (I_on/I_off) increase slightly from 70 to 90 °C, and remain relatively constant between 90 and 130 °C. I_on/I_off and µ of dibromo‐PDI‐based OFETs decrease with increasing T_d, while films of N,N′‐1H,1H‐perfluorobutyl dicyanoperylenediimide (PDI‐FCN₂) exhibit dramatic I_on/I_off and µ enhancements with increasing T_d. Increased OFET mobility can be correlated with higher levels of molecular ordering and minimization of film morphology surface irregularities. Additionally, the effects of SiO₂ surface modification with trimethylsilyl and octadecyltrichlorosilyl monolayers, as well as with polystyrene, are investigated for N,N′‐n‐octyl dicyanoperylenediimide (PDI‐8CN₂) and PDI‐FCN₂ films deposited at T_d = 130 °C. The SiO₂ surface treatments have modest effects on PDI‐8CN₂ OFET mobilities, but modulate the mobility and morphology of PDI‐FCN₂ films substantially. Most importantly, the surface treatments result in substantially increased V_th and decreased I_off values for the dicyanoperylenediimide films relative to those grown on SiO₂, resulting in V_th > 0.0 V and I_on/I_off ratios as high as 10⁸. Enhancements in current modulation for these high‐mobility, air‐stable, and solution‐processable n‐type semiconductors, should prove useful in noise‐margin enhancement and further improvements in organic electronics.     

Fabrication of Organic Thin‐Film Transistors on Three‐Dimensional Substrates Using Free‐Standing Polymeric Masks Based on Soft Lithography

Here, a novel fabrication technique for integrated organic devices on substrates with complex structure is presented. For this work, free‐standing polymeric masks with stencil‐patterns are fabricated using an ultra‐violet (UV) curable polyurethaneacrylate (PUA) mixture, and used as shadow masks for thermal evaporation. High flexibility and adhesive properties of the free‐standing PUA masks ensure conformal contact with various materials such as glass, silicon (Si), and polymer, and thus can also be utilized as patterning masks for solution‐based deposition methods, such as spin‐coating and drop‐casting. Based on this technique, a number of integrated organic transistors are fabricated simultaneously on a cylindrical glass bottle with high curvature, as well as on a flat silicon wafer. It is anticipated that these results will be applied to the development of various integrated organic devices on complex‐structured substrates, which can lead to further applications.     

Paper‐Like,Thin, Foldable,and Self‐Healable Electronics Based on PVA/CNC Nanocomposite Film

The facile fabrication of thin and foldable self‐healing electronics on a poly(vinyl alcohol)/cellulose nanocrystal (PVA/CNC) composite film is reported. The self‐healing property of the PVA/CNC nanocomposite film can be activated by spraying water on the film surface, via dynamic formation of hydrogen bonding. The self‐healing efficiency of PVA/CNC is influenced by the content of CNC in the film, pH of the spraying solution, and the temperature. Via vacuum filtration and pattern transfer techniques, both a supercapacitor and a temperature sensor are fabricated on the same PVA/CNC film using gold nanosheet (AuNS) and polyaniline/multiwalled nanotube (PANI/MWCNT) electrodes. The fabricated supercapacitor with a gel‐type electrolyte exhibits a high electrochemical performance, and the thermoresistive temperature sensor shows a linear sensitivity with a fast response. Both devices exhibit superior mechanical stability and self‐healing property over 100 repetitive folding and five repetitive healing cycles, respectively, retaining the device performance owing to the percolated network of the conductive materials. This work demonstrates that our paper‐like thin PVA/CNC film‐based self‐healable devices can serve as highly durable and deformable electronics with longevity.     

Enhancement of Interconnectivity in the Channels of Pentacene Thin‐Film Transistors and Its Effect on Field‐Effect Mobility

With the aim of improving the field‐effect mobility of transistors by promoting the interconnectivity of the grains in pentacene thin films, deposition conditions of the pentacene molecules using one‐step (total thickness of layer 50 nm: 0.1 Å s^–1) and two‐step (first layer 10 nm: 0.1 Å s^–1, second layer 40 nm: 4.0 Å s^–1) depositions are controlled. Significantly, it is found that the continuities of the pentacene thin films vary with the deposition conditions of the pentacene molecules. Specifically, a smaller number of voids is observed at the interface for the two‐step deposition, which results in field‐effect mobilities as high as 1.2 cm² V^–1 s^–1; these are higher by more than a factor of two than those of the pentacene films deposited in one step. This remarkable increase in field‐effect mobility is due in particular to the interconnectivity of the pentacene grains near the insulator substrate.     

A Densely and Uniformly Packed Organic Semiconductor Based on Annelated β‐Trithiophenes for High‐Performance Thin Film Transistors

A novel semiconductor based on annelated β‐trithiophenes is presented, possessing an extraordinary compressed packing mode combining edge‐to‐face π–π interactions and S…S interactions in single crystals, which is favorable for more effective charge transporting. Accordingly, the device incorporating this semiconductor shows remarkably high charge carrier mobility, as high as 0.89 cm² V^?1 s^?1, and an on/off ratio of 4.6 × 10⁷ for vacuum‐deposited thin films.     

The Swiss‐Army‐Knife Self‐Assembled Monolayer: Improving Electron Injection,Stability, and Wettability of Metal Electrodes with a One‐Minute Process

A novel Self‐assembled Monolayer (SAM) forming molecule bisjulolidyldisulfide (9,9'‐disulfanediylbis(2,3,6,7‐tetrahydro‐1H,5H‐pyrido[3,2,1‐ij]quinoline)) is demonstrated which lowers the work function of metal surfaces by ≈1.2 eV and can be deposited in a 1 min process. Bisjulolidyldisulfide exists in a stable disulfide configuration prior to surface exposure and can therefore be stored, handled, and processed in ambient conditions. SAM from bisjulolidyldisulfide are deposited on metal surfaces (Au and Ag), including inkjet printed Ag on polyethylene terephthalate substrates, investigated by photoelectron and infrared spectroscopy, and used as electrodes in n‐type organic field effect transistor (OFET). Treatment of electrodes in OFET devices with with bisjulolidyldisulfide‐SAMs reduces the contact resistance by two orders of magnitude and improves shelf life with respect to pristine metal electrodes. The presented treatment also increases the surfaces wettability and thereby facilitates solution processing of a subsequent layer. These beneficial properties for device performance, processing, and stability, combined with ease of preparation and handling, render this SAM‐forming molecule an excellent candidate for the high‐throughput production of flexible electronic devices.