Single‐Walled Carbon‐Nanotube Networks on Large‐Area Glass Substrate by the Dip‐Coating Method

Highly uniform and large‐area single‐walled carbon‐nanotube (SWNT) networks are realized by the dip‐coating method, which is based on fundamental fluid‐dynamic phenomena such as capillary condensation and surface tension. The changes in the polarity and hydration properties of the substrate affect the morphology of the SWNT networks and result in nonlinear growth of the networks in the repetitive dip‐coating process. The density and the thickness of the SWNT networks are controlled by processing variables including number of dip coatings, concentration of SWNT colloidal solution, and withdrawal velocity. The networks have uniform sheet resistances and high optical transmittance in the visible wavelength range.     

Solution‐Processing of High‐Purity Semiconducting Single‐Walled Carbon Nanotubes for Electronics Devices

High‐purity semiconducting single‐walled carbon nanotubes (s‐SWCNTs) are of paramount significance for the construction of next‐generation electronics. Until now, a number of elaborate sorting and purification techniques for s‐SWCNTs have been developed, among which solution‐based sorting methods show unique merits in the scale production, high purity, and large‐area film formation. Here, the recent progress in the solution processing of s‐SWCNTs and their application in electronic devices is systematically reviewed. First, the solution‐based sorting and purification of s‐SWCNTs are described, and particular attention is paid to the recent advance in the conjugated polymer‐based sorting strategy. Subsequently, the solution‐based deposition and morphology control of a s‐SWCNT thin film on a surface are introduced, which focus on the strategies for network formation and alignment of SWCNTs. Then, the recent advances in electronic devices based on s‐SWCNTs are reviewed with emphasis on nanoscale s‐SWCNTs' high‐performance integrated circuits and s‐SWCNT‐based thin‐film transistors (TFT) array and circuits. Lastly, the existing challenges and development trends for the s‐SWCNTs and electronic devices are briefly discussed. The aim is to provide some useful information and inspiration for the sorting and purification of s‐SWCNTs, as well as the construction of electronic devices with s‐SWCNTs.     

Thread‐like Supercapacitors Based on One‐Step Spun Nanocomposite Yarns

Thread‐like electronic devices have attracted great interest because of their potential applications in wearable electronics. To produce high‐performance, thread‐like supercapacitors, a mixture of stable dispersions of single‐walled carbon nanotubes and conducting polyaniline nanowires are prepared. Then, the mixture is spun into flexible yarns with a polyvinyl alcohol outer sheath by a one‐step spinning process. The composite yarns show excellent mechanical properties and high electrical conductivities after sufficient washing to remove surfactants. After applying a further coating layer of gel electrolyte, two flexible yarns are twisted together to form a thread‐like supercapacitor. The supercapacitor based on these two yarns (SWCNTs and PAniNWs) possesses a much higher specific capacitance than that based only on pure SWCNTs yarns, making it an ideal energy‐storage device for wearable electronics.     

Photoconductivity of Bulk‐Film‐Based Graphene Sheets

Time‐resolved photoconductivity measurements are carried out on graphene films prepared by using soluble graphene oxide. High photocurrent generation efficiency is observed for these graphene‐based films, and the relationships between their photoconductivity and different preparation methods, incident light intensity, external electric field, and photon energies are investigated. Higher photoconductivity is observed with higher photon energy at same incident light intensity. By fitting the experimental data to the Onsager model, the primary quantum yields for charge separation to generate bound electron–hole pairs and the initial ion‐pair thermalization separation distance are calculated.