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类金刚石薄膜的Raman光谱分析及红外光谱特性 总被引:3,自引:0,他引:3
用酒精和氢气的混合气体为工作气体 ,在不同的酒精浓度下 (1 0 % ,1 5% ,2 0 % )下利用微波等离子体化学气相沉积法在较低温度下 (450~ 50 0℃ )以单晶硅为衬底制备出类金刚石薄膜样品。 Raman光谱分析了酒精浓度对薄膜中金刚石成份的含量的影响。红外光谱分析表明薄膜的红外光透过率与薄膜的表面形貌、薄膜结构有关。酒精浓度为 1 0 %时得到的金刚石薄膜的红外光透过率最高 ,达到 62~ 72 % ,同时透过率曲线因薄膜干涉而引起的振荡也最为显著。 相似文献
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利用HJ - 4型连续CO2 激光对金刚石膜进行了激光损伤阈值的研究,损伤后的金刚石膜用SEM和Raman进行了表征。研究结果表明,高质量CVD自支撑金刚石膜具有较高的
激光损伤阈值,金刚石膜抗连续激光损伤阈值的范围是在1. 15 ×106 ~2. 26 ×106W / cm2。金刚石膜激光损伤主要是由于热震损伤,其机制属于热- 力耦合机制。 相似文献
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P. Lipowsky R. C. Hoffmann U. Welzel J. Bill F. Aldinger 《Advanced functional materials》2007,17(13):2151-2159
When soluble zinc salts are hydrolyzed in water, usually elongated micrometer‐sized zincite crystals are formed. In this study, polyvinylpyrrolidone (PVP) in a methanolic solution is used as an agent to control the morphology of the deposition product. It prevents crystal growth and yields zinc oxide nanocrystals. Thin films consisting of zinc oxide nanocrystals are formed on self‐assembled monolayers (SAMs) of sulfonate‐terminated alkylsiloxanes. Patterned films are deposited after local decomposition of the SAM by UV irradiation. The films fabricated from methanolic solutions containing PVP are particularly smooth, uniform and stable. Their thickness is determined by the deposition time and the molar ratio [PVP]:[Zn2+], so that films of arbitrary thickness and nearly constant roughness can be obtained. The crystal grains are oriented preferentially with 〈001〉 direction perpendicular to the substrate surface. The films show ultraviolet, orange‐red and green‐yellow photoluminescence; the latter is quenched by heat treatment. Based on the obtained experimental results, a deposition mechanism is suggested. 相似文献
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M. Losurdo M. M. Giangregorio P. Capezzuto G. Bruno R. G. Toro G. Malandrino I. L. Fragalà L. Armelao D. Barreca E. Tondello A. A. Suvorova D. Yang E. A. Irene 《Advanced functional materials》2007,17(17):3607-3612
In this study, thin films of Er2O3 are deposited by low‐pressure metal–organic chemical vapor deposition (MOCVD) using a tris(isopropylcyclopentadienyl)erbium precursor and O2 on various substrates, including p‐type Si(100), Si(111), Corning glass, and c‐axis‐oriented α‐Al2O3(0001). The resulting films are extensively characterized in order to demonstrate their applicability as antireflective and protective coatings and as high‐k gate dielectrics. The interplay existing among the substrate, the nucleation kinetics, and the resulting structural, morphological, optical, and electrical properties of Er2O3 thin films is explored. Fast nucleation governed by surface energy minimization characterizes the growth of (111)‐oriented Er2O3 on Si(100), glass, and α‐Al2O3. Conversely, nonhomogeneous nucleation leads to polycrystalline Er2O3 on Si(111) substrates. Er2O3 films grown on Si(100) possess superior characteristics. A high refractive index of 2.1 at 589.3 nm, comparable to the value for bulk single crystalline Er2O3, a high transparency in the near UV‐vis range, and an optical bandgap of 6.5 eV make Er2O3 interesting as an antireflective and protective coating. A static dielectric constant of 12–13 and a density of interface traps as low as 4.2 × 1010 cm2 eV–1 for 5–10 nm thick Er2O3 layers grown on Si(100) render the present Er2O3 films interesting also as high‐k dielectrics in complementary metal oxide semiconductor (CMOS) devices. 相似文献
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Adhesion studies of CVD copper metallization 总被引:2,自引:0,他引:2
Srinivas Gandikota Steve Voss Rong Tao Alain Duboust Dennis Cong Liang-Yuh Chen Sesh Ramaswami Daniel Carl 《Microelectronic Engineering》2000,50(1-4):547-553
The adhesion of chemical vapor deposition (CVD) Cu thin films to various barriers was observed to improve with a post-deposition anneal or a physical vapor deposition (PVD) Cu flash layer on the barrier before depositing CVD Cu. The ambient exposure of the barrier before the deposition of CVD Cu has been observed to lead to degradation of adhesion in both CVD Cu seed and CVD/PVD Cu high vacuum integrated metallization schemes. The integrated CVD and PVD Cu deposition scheme exhibits better adhesion due to the inherent annealing provided during the PVD deposition which is carried out at temperatures between 300 and 400°C. We have evaluated both qualitative and quantitative tests — tape test, Stud pull test and 4-point bend test — in understanding adhesion and observed that each of these tests give different details of interface breakdown. 相似文献
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在直接耦合式微波等离子体化学气相沉积金刚石膜装置的石英管反应腔加上磁镜场来更好地约束等离子体,使等离子体球成为“碟盘”状,提高了等离子体球的密度,在基本参数:反应压力2.5kPa、基片温度450℃、气体流量为Ar:40sccm、CH4:4sccm、Hz:60sccm不变的情况下,沉积面积直径由30mm增长到50mm,沉积速度由3.3μm/h增长到3.8μm/h,最大反射电流由15μA减小5μA。从而大大减少了在石英管壁和观察窗的沉积,有效利用微波能量电离出更多的活性基团沉积出高质量的(类)金刚石薄膜。 相似文献
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C-H体系CVD金刚石薄膜取向生长的热力学分析 总被引:1,自引:0,他引:1
化学气相淀积金刚石薄膜过程中 ,CH3 和C2 H2 是金刚石生长的主要前驱基团。C2 H2 与CH3 浓度比 ( [C2 H2 ]/[CH3 ])的变化将影响金刚石薄膜的生长取向。用非平衡热力学耦合模型计算了C H体系CVD金刚石薄膜生长过程中C2 H2 浓度和CH3浓度随淀积条件的变化 ,并进一步获得了 [C2 H2 ]/[CH3 ]随衬底温度和CH4浓度的变化关系 ,从理论上探讨了金刚石薄膜 ( 1 1 1 )面和 ( 1 0 0 )面取向生长与淀积条件的关系。在衬底温度和CH4浓度由低到高的变化过程中 ,[C2 H2 ]/[CH3 ]逐渐升高 ,导致金刚石薄膜的形貌从 ( 1 1 1 )晶面转为 ( 1 0 0 )晶面。 相似文献
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黑色组织对直流电弧等离子体喷射金刚石自支撑膜光学、热学性能的影响 总被引:2,自引:1,他引:1
利用直流电弧等离子体喷射化学气相沉积法进行不同质量的金刚石厚膜的制备.金刚石膜用倒置荧光显微镜(OM)、高分辨电镜(HRTEM)、电子能量损失谱(EELS)、拉曼谱(Raman)进行表征,同时测量了不同质量金刚石膜的红外透过率和热导率.研究结果表明,黑色组织主要是金刚石膜中的夹杂物,成分主要是非晶碳和杂质氮.对于光学级透明金刚石膜,具有很高的红外透过率和热导率,黑色组织的存在明显降低了金刚石膜的质量,对金刚石膜的红外透过率和热导率的影响非常显著. 相似文献
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采用电子辅助-热丝化学气相沉积法(EA-HFCVD)在硅片上沉积出晶粒尺寸为30nm的均匀金刚石膜。生长过程中,预先加6A偏流生长1h,然后在0.8kPa条件下,无偏流生长3h。光致发光谱中存在4个发光中心分别位于1.682eV,1,564eV,1,518eV和1.512eV的发光峰。1.682eV处发光峰源于衬底硅原子掺杂于膜中引起的缺陷;其他发光峰源于金刚石晶格振动声子。光致发光强度越大对应的缺陷密度越大,从而降低了场发射域值电场强度,其关键可能源于金刚石膜电导型晶界。 相似文献
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(100)定向CVD金刚石薄膜的制备及其电学性能 总被引:3,自引:0,他引:3
采用HFCVD制备金刚石薄膜的方法,以乙醇为碳源,氢气为载气,在适当的衬底温度下,合成出具有(100)晶面取向均匀生长的金刚石薄膜.SEM,XRD和Raman分析表明,所合成的金刚石薄膜是高质量的多晶(100)取向膜,厚度均匀、化学性能稳定,结构和性能与天然金刚石相接近.研究了室温下(100)取向金刚石薄膜的暗电流电压特性、稳态55Fe 5.9keV X射线辐照下的响应和电容频率特性.结果表明,退火后(100)取向多晶金刚石薄膜具有较低的暗电流和较高的X射线响应;高频下,电容和介电损耗都很小且趋于稳定,不随频率的变化而变化. 相似文献
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Chemical solution deposition of semiconductor films has been confined almost entirely to chalcogenides. Here, we extend this technique to halide films. Silver halides (AgI, AgBr, and AgCl) were deposited using in‐situ homogeneous hydrolysis of organic haloalcohols to form halide ions that react with silver ions in aqueous solution. Also, a rapid precipitation method is described that gives AgCl films. Structural (XRD), morphological (TEM), and optical (transmission spectra) characterizations of the films are presented. Some preliminary results and ideas on other halide films are presented. 相似文献
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The techniques of initiated chemical vapor deposition (iCVD) and oxidative chemical vapor deposition (oCVD) enable the fabrication of chemically well‐defined thin polymeric films on complex objects with micro‐ and nano‐scale features. By depositing polymers from the vapor phase, many wetting and solution effects are avoided, and conformal films can be created. In iCVD, a variant of hot filament CVD, the deposition rate is enhanced and chemical functionalities of the polymers' constituents are maintained by including a thermally labile initiator in the feed stream. Due to the low energy required when using an initiator, delicate substrates can be coated. In oCVD, infusible, electrically conductive films are formed directly on the substrate of interest as the oxidant and monomer are introduced into the reactor simultaneously. This Feature Article provides an overview of the work that has been done to develop iCVD and oCVD into platform technologies. Relevant background, fundamentals, and applications will be discussed. 相似文献
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超纳米金刚石薄膜场发射特性的研究 总被引:7,自引:3,他引:7
超纳米金刚石(UNCD)是一种全新的纳米材料,具有许多独特性能。介绍了Si微尖和微尖阵列阴极沉积超纳米金刚石薄膜的工艺及其场发射特性。研究发现,适当的成核工艺和微波等离子体化学气相沉积工艺可在Si微尖上沉积一层光滑敷形的金刚石薄膜;沉积后阴极的电压-电流特性、发射电流的稳定性以及工作在氧气环境下的发射特性都获得明显提高。讨论了超纳米晶金刚石薄膜阴极的发射机理。 相似文献
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A series of poly(oligothienylene vinylenes) (PTmVs, m = 2–4) with a varying number of consecutively bound thienylene rings are successfully prepared in thin films by chemical vapor deposition polymerization (CVDP) using the corresponding bis(halomethyl)thiophenes as starting materials. The chemical and electronic structures are studied spectroscopically and also by cyclic voltammetry. Top‐gate field‐effect transistors are fabricated by two consecutive CVDP cycles of PTmV and poly(p‐xylylene) followed by the deposition of a Au gate electrode. In the case of a PT3V active layer, a field‐effect mobility value of 0.5 × 10–4 cm2 V–1 s–1 is obtained. 相似文献
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报道了用微波等离子体化学气相淀积技术在TaN2电阻材料上淀积高质量金刚石薄膜的制备工艺,以及扫描电镜、X射线衍射、拉曼光谱、压痕测试的测试结果。探讨了提高金刚石膜在非金刚石衬底成核密度与粘附性的实验方法,从实验上证实了CVD金刚石膜可以用作TaN2热敏打印头表面保护层。 相似文献