Large‐Area Ordered Quantum‐Dot Monolayers via Phase Separation During Spin‐Casting

We investigate a new method for forming large‐area (> cm²) ordered monolayers of colloidal nanocrystal quantum dots (QDs). The QD thin films are formed in a single step by spin‐casting a mixed solution of aromatic organic materials and aliphatically capped QDs. The two different materials phase separate during solvent drying, and for a predefined set of conditions the QDs can assemble into hexagonally close‐packed crystalline domains. We demonstrate the robustness and flexibility of this phase‐separation process, as well as how the properties of the resulting films can be controlled in a precise and repeatable manner. Solution concentration, solvent ratio, QD size distribution, and QD aspect ratio affect the morphology of the cast thin‐film structure. Controlling all of these factors allows the creation of colloidal‐crystal domains that are square micrometers in size, containing tens of thousands of individual nanocrystals per grain. Such fabrication of large‐area, engineered layers of nanoscale materials brings the beneficial properties of inorganic QDs into the realm of nanotechnology. For example, this technique has already enabled significant improvements in the performance of QD light‐emitting devices.     

Soft‐Lithographed Up‐Converted Distributed Feedback Visible Lasers Based on CdSe–CdZnS–ZnS Quantum Dots

The development of a solution‐deposited up‐converted distributed feedback laser prototype is presented. It employs a sol–gel silica/germania soft‐lithographed microcavity and CdSe–CdZnS–ZnS quantum dot/sol–gel zirconia composites as optical gain material. Characterization of the linear and nonlinear optical properties of quantum dots establishes their high absorption cross‐sections in the one‐ and two‐ photon absorption regimes to be 1 × 10^?14 cm² and 5 × 10⁴ GM, respectively. In addition, ultrafast transient absorption dynamics measurements of the graded seal quantum dots reveal that the Auger recombination lifetime is 220 ps, a value two times higher than that of the corresponding CdSe core. These factors enable the use of such quantum dots as optically pumped gain media, operating in the one‐ and two‐photon absorption regime. The incorporation of CdSe–CdZnS–ZnS quantum dots within a zirconia host matrix affords a quantum‐dot ink that can be directly deposited on our soft‐lithographed distributed feedback grating to form an all‐solution‐processed microcavity laser.     

Magnetic and Structural Investigation of ZnSe Semiconductor Nanoparticles Doped With Isolated and Core‐Concentrated Mn2+ Ions

X‐Ray magnetic circular dichroism (XMCD) experiments on diluted magnetic semiconductor nanocrystals (2–7 nm) are reported in order to study their local electronic structure and magnetic properties. ZnSe nanoparticles containing either single manganese ions (Mn²⁺) distributed in the lattice of the entire particle or a MnSe core in the center are prepared using high temperature approaches. The Mn²⁺ concentration is varied between less than one to several tens of manganese ions per nanocrystal. For all samples it is shown that the Mn²⁺ is exclusively present in the bulk of ZnSe nanoparticles with no evidence for oxidation to higher Mn‐oxidation states. The magnetic ions are highly polarized inside the nanocrystals reaching about 80% of the theoretical value of a pure d⁵ state under identical conditions for the case of isolated manganese ions. Nanocrystals with a MnSe core ZnSe shell structure reach <50% of this value. Thus, their polarization is significantly more hindered, which is due to the significantly enhanced Mn–Mn interactions and a more distorted crystalline lattice. In contrast, no coupling between the manganese centers is observed in the nanoparticles doped samples with low concentrations of Mn²⁺, indicating that these ions are isolated in the bulk of the nanoparticles.     

Layer‐by‐Layer Fabrication of Nanowire Sensitized Solar Cells: Geometry‐Independent Integration

Thin film solar cells that are low in cost but still reasonably efficient comprise an important strategy for reaching price‐performance ratios competitive with fossil fuel electrical generation. Sensitized solar cells – most commonly dye but also semiconductor nanocrystal sensitized – are a thin film device option benefitting from lost cost material components and processing. Nanocrystal sensitized solar cells are predicted to outpace their dye‐based counterparts, but suffer from limited availability of approaches for integrating the nano‐sensitizers within a mesoporous oxide anode, which effectively limits the choice of sensitizer to those that are synthesized in situ or those that are easily incorporated into the oxide framework. The latter methods favor small, symmetric nanocrystals, while highly asymmetric semiconductors (e.g., nanowires, tetrapods, carbon nanotubes) have to date found limited utility in sensitized solar‐cell devices, despite their promise as efficient solar energy converters. Here, a new strategy for solar cell fabrication is demonstrated that is independent of sensitizer geometry. Nanocrystal‐sensitized solar cells are fabricated from either CdSe semiconductor quantum dots or nanowires with facile control over nanocrystal loading. Without substantial optimization and using low processing temperatures, efficiencies approaching 2% are demonstrated. Furthermore, the significance of a ‘geometry‐independent’ fabrication strategy is shown by revealing that nanowires afford important advantages compared to quantum dots as sensitizers. For equivalent nanocrystal masses and otherwise identical devices, nanowire devices yield higher power conversion efficiencies, resulting from both enhanced light harvesting efficiencies for all overlapping wavelengths and internal quantum efficiencies that are more than double those obtained for quantum dot devices.     

CdS Quantum Dots Encapsulated in Chiral Nematic Mesoporous Silica: New Iridescent and Luminescent Materials

Simultaneous integration of light emission and iridescence into a semiconducting photonic material is attractive for the design of new optical devices. Here, a straightforward, one‐pot approach for liquid crystal self‐assembly of semiconductor quantum dots into cellulose nanocrystal‐templated silica is developed. Through a careful balance of the intermolecular interactions between a lyotropic tetraalkoxysilane/cellulose nanocrystal dispersion and water‐soluble polyacrylic acid/mercaptopropionic acid‐stabilized CdS quantum dots, CdS/silica/nanocellulose composites that retain both chiral nematic order of the cellulose nanocrystals and emission of the quantum dots are successfully co‐assembled. Subsequent removal of the cellulose template and organic stabilizers in the composites by controlled calcination generates new freestanding iridescent, luminescent chiral nematic mesoporous silica‐encapsulated CdS films. The pores of these materials are accessible to analytes and, consequently, the CdS quantum dots undergo strong luminescence quenching when exposed to TNT solutions or vapor.     

Highly Efficient Quantum‐Dot‐Sensitized Solar Cell Based on Co‐Sensitization of CdS/CdSe

Cadmium sulfide (CdS) and cadmium selenide (CdSe) quantum dots (QDs) are sequentially assembled onto a nanocrystalline TiO₂ film to prepare a CdS/CdSe co‐sensitized photoelectrode for QD‐sensitized solar cell application. The results show that CdS and CdSe QDs have a complementary effect in the light harvest and the performance of a QDs co‐sensitized solar cell is strongly dependent on the order of CdS and CdSe respected to the TiO₂. In the cascade structure of TiO₂/CdS/CdSe electrode, the re‐organization of energy levels between CdS and CdSe forms a stepwise structure of band‐edge levels which is advantageous to the electron injection and hole‐recovery of CdS and CdSe QDs. An energy conversion efficiency of 4.22% is achieved using a TiO₂/CdS/CdSe/ZnS electrode, under the illumination of one sun (AM1.5,100 mW cm^?2). This efficiency is relatively higher than other QD‐sensitized solar cells previously reported in the literature.     

Photoluminescence Tuning in Stretchable PDMS Film Grafted Doped Core/Multishell Quantum Dots for Anticounterfeiting

The development of new luminescent materials for anticounterfeiting is of great importance, owing to their unique physical, chemical, and optical properties. The authors report the use of color‐tunable colloidal CdS/ZnS/ZnS:Mn²⁺/ZnS core/multishell quantum dots (QDs)‐functionalized luminescent polydimethylsiloxane film (LPF) for anticounterfeiting applications. Both luminescent QDs and as‐fabricated, stretchable, and transparent LPF show blue and orange emission simultaneously, which are ascribed to CdS band‐edge emission and the ⁴T₁ → ⁶A₁ transition of Mn²⁺, respectively; their emission intensity ratios are dependent on the power‐density of a single‐wavelength excitation source. Additionally, photoluminescence tuning of CdS/ZnS/ZnS:Mn²⁺/ZnS QDs in hexane or embedded in LPF can also be realized under fixed excitation power due to a resonance energy transfer effect. Tunable photoluminescence of these flexible LPF grafted doped core/shell QDs can be finely controlled and easily realized, depending on outer excitation power and intrinsic QD concentration, which is intriguing and inspires the fabrication of many novel applications.     

Ultrathin Highly Luminescent Two‐Monolayer Colloidal CdSe Nanoplatelets

Surface effects in atomically flat colloidal CdSe nanoplatelets (NLPs) are significantly and increasingly important with their thickness being reduced to subnanometer level, generating strong surface related deep trap photoluminescence emission alongside the bandedge emission. Herein, colloidal synthesis of highly luminescent two‐monolayer (2ML) CdSe NPLs and a systematic investigation of carrier dynamics in these NPLs exhibiting broad photoluminescence emission covering the visible region with quantum yields reaching 90% in solution and 85% in a polymer matrix is shown. The astonishingly efficient Stokes‐shifted broadband photoluminescence (PL) emission with a lifetime of ≈100 ns and the extremely short PL lifetime of around 0.16 ns at the bandedge signify the participation of radiative midgap surface centers in the recombination process associated with the underpassivated Se sites. Also, a proof‐of‐concept hybrid LED employing 2ML CdSe NPLs is developed as color converters, which exhibits luminous efficacy reaching 300 lm W_opt^?1. The intrinsic absorption of the 2ML CdSe NPLs (≈2.15 × 10⁶ cm^?1) reported in this study is significantly larger than that of CdSe quantum dots (≈2.8 × 10⁵ cm^?1) at their first exciton signifying the presence of giant oscillator strength and hence making them favorable candidates for next‐generation light‐emitting and light‐harvesting applications.     

Role of Interface Chemistry in Opening New Radiative Pathways in InP/CdSe Giant Quantum Dots with Blinking‐Suppressed Two‐Color Emission

InP/CdSe core/thick‐shell “giant” quantum dots (gQDs) that exhibit blinking‐suppressed two‐color excitonic emission have been synthesized and optically characterized. These type II heterostructures exhibit photoluminescence from both a charge‐separated, near‐infrared type II excitonic state, and a shell‐localized visible‐color excitonic state. Infrared emission is intrinsic to the type II QD, while visible emission can either be eliminated or enhanced through chemical modification of the InP surface prior to CdSe shell growth. Single‐QD photoluminescence measurements confirm that the dual color emission is from individual nanocrystals. The probability of observing dual emission from individual QDs and the extent of blinking suppression increases with shell thickness. Visible emission can be stabilized by the addition of a second shell of CdS, where the resulting InP/CdSe/CdS core/shell/shell nanocrystals afford the strongest blinking suppression, determined by analysis of the Mandel Q parameter. Transient absorption spectroscopy verifies that dual emission arises when hole relaxation from the shell to the core is impeded, possibly as a result of enhanced interfacial hole trapping at F^? or O^2? defect sites. Electron–hole recombination in the shell then competes with slower type II recombination, providing a different mechanism for breaking Kasha's rule and allowing two colors of light to be emitted from one nanostructure.     

Silver‐Adapted Diffusive Memristor Based on Organic Nitrogen‐Doped Graphene Oxide Quantum Dots (N‐GOQDs) for Artificial Biosynapse Applications

Carbon‐based electronic devices are suitable candidates for bioinspired electronics due to their low cost, eco‐friendliness, mechanical flexibility, and compatibility with complementary metal‐oxide‐semiconductor technology. New types of materials such as graphene quantum dots (GQDs) have attracted attention in the search for new applications beyond solar cells and energy harvesting due to their superior properties such as elevated photoluminescence, high chemical inertness, and excellent biocompatibility. In this paper, a biocompatible/organic electronic synapse based on nitrogen‐doped graphene oxide quantum dots (N‐GOQDs) is reported, which exhibits threshold resistive switching via silver cation (Ag⁺) migration dynamics. In analogy to the calcium (Ca²⁺) ion dynamics of biological synapses, important biological synapse functions such as short‐term potentiation (STP), paired‐pulse facilitation, and transition from STP to long‐term plasticity behaviors are replicated. Long‐term depression behavior is also evaluated and specific spike‐timing dependent plasticity is assessed. In addition, elaborated switching mechanism of biosimilar Ag⁺ migration dynamics provides the potential for using N‐GOQD‐based artificial synapse in future biocompatible neuromorphic systems.     

Near‐Field Energy Transfer Using Nanoemitters For Optoelectronics

Effective utilization of excitation energy in nanoemitters requires control of exciton flow at the nanoscale. This can be readily achieved by exploiting near‐field nonradiative energy transfer mechanisms such as dipole‐dipole coupling (i.e., Förster resonance energy transfer) and simultaneous two‐way electron transfer via exchange interaction (i.e., Dexter energy transfer). In this feature article, we review nonradiative energy transfer processes between emerging nanoemitters and exciton scavengers. To this end, we highlight the potential of colloidal semiconductor nanocrystals, organic semiconductors, and two‐dimensional materials as efficient exciton scavengers for light harvesting and generation in optoelectronic applications. We present and discuss unprecedented exciton transfer in nanoemitter–nanostructured semiconductor composites enabled by strong light–matter interactions. We elucidate remarkably strong nonradiative energy transfer in self‐assembling atomically flat colloidal nanoplatelets. In addition, we underscore the promise of organic semiconductor–nanocrystal hybrids for spin‐triplet exciton harvesting via Dexter energy transfer. These efficient exciton transferring hybrids will empower desired optoelectronic properties such as long‐range exciton diffusion, ultrafast multiexciton harvesting, and efficient photon upconversion, leading to the development of excitonic optoelectronic devices such as exciton‐driven light‐emitting diodes, lasers, and photodetectors.     

Chiral 2D Colloidal Semiconductor Quantum Wells

Induced chirality in colloidal semiconductor nanoparticles has raised significant attention in the past few years as an extremely sensitive spectroscopic tool and due to the promising applications of chiral quantum dots in sensing, quantum optics, and spintronics. Yet, the origin of the induced chiroptical effects in semiconductor nanoparticles is still not fully understood, partly because almost all the theoretical and experimental studies to date are based on the simple model system of a spherical nanocrystal. Here, the realization of induced chirality in atomically flat 2D colloidal quantum wells is shown. A strong circular dichroism (CD) response as well as an absorptive‐like CD line shape is observed in chiral CdSe nanoplatelets (NPLs), significantly differing from that previously observed in spherical dots. Furthermore, this intense CD signal almost completely disappears after coating with a very thin CdS shell. In contrast, CdSe‐CdS core‐crown NPLs exhibit a spectral response which seems to originate independently from the core and the crown regions of the NPL. This work on the one hand further advances the understanding of the fundamental origin of induced chiroptical effects in semiconductor nanoparticles, and on the other opens a pathway toward applications using chiroptical materials.     

Quantum‐Dot‐Functionalized Poly(styrene‐co‐acrylic acid) Microbeads: Step‐Wise Self‐Assembly,Characterization, and Applications for Sub‐femtomolar Electrochemical Detection of DNA Hybridization

A novel nanoparticle label capable of amplifying the electrochemical signal of DNA hybridization is fabricated by functionalizing poly(styrene‐co‐acrylic acid) microbeads with CdTe quantum dots. CdTe‐tagged polybeads are prepared by a layer‐by‐layer self‐assembly of the CdTe quantum dots (diameter = 3.07 nm) and polyelectrolyte on the polybeads (diameter = 323 nm). The self‐assembly procedure is characterized using scanning and transmission electron microscopy, and X‐ray photoelectron, infrared and photoluminescence spectroscopy. The mean quantum‐dot coverage is (9.54 ± 1.2) × 10³ per polybead. The enormous coverage and the unique properties of the quantum dots make the polybeads an effective candidate as a functionalized amplification platform for labelling of DNA or protein. Herein, as an example, the CdTe‐tagged polybeads are attached to DNA probes specific to breast cancer by streptavidin–biotin binding to construct a DNA biosensor. The detection of the DNA hybridization process is achieved by the square‐wave voltammetry of Cd²⁺ after the dissolution of the CdTe tags with HNO₃. The efficient carrier‐bead amplification platform, coupled with the highly sensitive stripping voltammetric measurement, gives rise to a detection limit of 0.52 fmol L^?1 and a dynamic range spanning 5 orders of magnitude. This proposed nanoparticle label is promising, exhibits an efficient amplification performance, and opens new opportunities for ultrasensitive detection of other biorecognition events.     

Efficient Directed Energy Transfer through Size‐Gradient Nanocrystal Layers into Silicon Substrates

Spectroscopic evidence of directed excitonic energy transfer (ET) is presented through size‐gradient CdSe/ZnS nanocrystal quantum dot (NQD) layers into an underlying Si substrate. NQD monolayers are chemically grafted on hydrogen‐terminated Si surfaces via a self‐assembled monolayer of amine modified carboxy‐alkyl chains. Subsequent NQD monolayers are linked with short alkyldiamines. The linking approach enables accurate positioning and enhanced passivation of the layers. Two different sizes of NQDs (energy donors emitting at 545 nm, and energy acceptors emitting at 585 nm) are used in comparing different monolayer and bilayer samples grafted on SiO₂ and oxide‐free Si surfaces via time‐resolved photoluminescence measurements. The overall efficiency of ET from the top‐layer donor NQDs into Si is estimated to approach ≈90% through a combination of different energy relaxation pathways. These include sequential ET through the intermediate acceptor layer realized mainly via the non‐radiative mechanism and direct ET into the Si substrate realized by means of the radiative coupling. The experimental observations are quantitatively rationalized by the theoretical modeling without introducing any extraneous energy scavenging processes. This indicates that the linker‐assisted fabrication enables the construction of defect‐free, bandgap‐gradient multilayer NQD/Si hybrid structures suitable for thin‐film photovoltaic applications.     

Dual Emission of Water‐Stable 2D Organic–Inorganic Halide Perovskites with Mn(II) Dopant

Moisture‐delicate and water‐unstable organic–inorganic halide perovskites (OI‐HPs) create huge challenges for the synthesis of highly efficient water‐stable light‐emitting materials for optoelectronic devices. Herein, a simple acid solution–assisted method to synthesize quantum confined 2D lead perovskites through Mn doping is reported. The efficient energy transfer between host and dopant ions in orange light‐emitting Mn²⁺‐doped OI‐HPs leads to the most efficient integrated luminescence with a photoluminescence quantum yield over 45%. The Mn²⁺ substitution of Pb²⁺ and passivation with low dielectric constant molecules such as phenethylamine, benzylamine, and butylamine enhance water resistivity, leading to water stability. The dual emission process of this water‐stable 2D Mn‐doped perovskite will help in developing highly efficient 2D water‐stable perovskites for practical applications.     

Electronic Properties and Structure of Assemblies of CdSe Nanocrystal Quantum Dots and Ru‐Polypyridine Complexes Probed by Steady State and Time‐Resolved Photoluminescence

Chemical and electronic interactions between CdSe nanocrystal quantum dots (NQDs) and Ru‐polypyridine complexes are studied in solution. It is shown that photoluminescence (PL) can be used to effectively monitor the formation of NQD‐complex assemblies in real time. It is also shown that with the aid of Langmuir isotherm modeling, the PL studies can be used to quantitatively characterize the composition of the assemblies and the strength of electronic interactions between their components. The approach demonstrated here is general and can be applied to other systems that combine semiconductor NQDs and appropriately functionalized organometallic or organic molecules interacting with NQDs via energy transfer, charge transfer, or other mechanisms leading to quenching of NQD emission.     

Pushing PbS/Metal‐Halide‐Perovskite Core/Epitaxial‐Ligand‐Shell Nanocrystal Photodetectors beyond 3 µm Wavelength

PbS nanocrystals have been proven to be highly suitable for photodetector fabrication by facile solution processing, and have been successfully tested as photosensitive material in imaging devices. So far, their spectral response has been blue‐shifted with respect to that of commercial bulk PbS detectors, due to quantum confinement in nanostructures smaller than the exciton Bohr radius. Here, a PbS nanocrystal synthesis approach is introduced, allowing to surpass this limit, and thus to push the cut‐off wavelength to the value of the bulk material. To avoid self‐absorbance from ligands within the spectral range of the photoconducting signal, an all inorganic metal‐halide‐perovskite is applied to form a semiconducting ligand shell. The photoconductors, which are provided from a single drop, do not only show a record in long wavelength operation for PbS nanocrystal detectors but also a room temperature detectivity > 10¹⁰ Jones, which is on par with that of commercial bulk PbS detectors. Combining these properties might find application in future low‐cost infrared imagers, which are currently still elusive due to their high prices.     

Interface Modifications of InAs Quantum‐Dots Solids and their Effects on FET Performance

InAs nanocrystals field‐effect transistors with an ON/OFF ratio of 10⁵ are reported. By tailoring the interface regions in the active layer step‐by‐step, the evolution of the ON/OFF ratio can be followed from approximately 5 all the way to around 10⁵. The formation of a semiconducting solid from colloidal nanocrystals is achieved through targeted design of the nanocrystal–nanocrystal interaction. The manipulation characteristics of the nanocrystal interfaces include the matrix surrounding the inorganic core, the interparticle distance, and the order of nanocrystals in the 3D array. Through careful analysis of device characteristics following each treatment, the effect of each on the physical properties of the films are able to be verified. The enhanced performance is related to interparticle spacing, reduction in sub‐gap states, and better electronic order (lower σ parameter). Films with enhanced charge transport qualities retain their quantum‐confined characteristics throughout the procedure, thus making them useful for optoelectronic applications.     

Efficient Near‐Infrared Light‐Emitting Diodes based on In(Zn)As–In(Zn)P–GaP–ZnS Quantum Dots

Near‐infrared (NIR) lighting plays an increasingly important role in new facial recognition technologies and eye‐tracking devices, where covert and nonvisible illumination is needed. In particular, mobile or wearable gadgets that employ these technologies require electronic lighting components with ultrathin and flexible form factors that are currently unfulfilled by conventional GaAs‐based diodes. Colloidal quantum dots (QDs) and emerging perovskite light‐emitting diodes (LEDs) may fill this gap, but generally employ restricted heavy metals such as cadmium or lead. Here, a new NIR‐emitting diode based on heavy‐metal‐free In(Zn)As–In(Zn)P–GaP–ZnS quantum dots is reported. The quantum dots are prepared with a giant shell structure, enabled by a continuous injection synthesis approach, and display intense photoluminescence at 850 nm with a high quantum efficiency of 75%. A postsynthetic ligand exchange to a shorter‐chain 1‐mercapto‐6‐hexanol (MCH) affords the QDs with processability in polar solvents as well as an enhanced charge‐transport performance in electronic devices. Using solution‐processing methods, an ITO/ZnO/PEIE/QD/Poly‐TPD/MoO₃/Al electroluminescent device is fabricated and a high external quantum efficiency of 4.6% and a maximum radiance of 8.2 W sr^?1 m^?2 are achieved. This represents a significant leap in performance for NIR devices employing a colloidal III–V semiconductor QD system, and may find significant applications in emerging consumer electronic products.     

Benzodithiophene Copolymer—A Low‐Temperature,Solution‐Processed High‐Performance Semiconductor for Thin‐Film Transistors

Poly(4,8‐didodecyl‐2,6‐bis‐(3‐methylthiophen‐2‐yl)‐benzo[1,2‐b:4,5‐b′]dithiophene) self‐assembled on appropriate substrates from solution and formed highly structured thin films at low temperatures. As an as‐prepared thin‐film semiconductor without thermal annealing, it exhibited excellent field‐effect transistor properties with mobility of ～ 0.15 cm² V^–1 s^–1 in thin‐film transistors.