钝化层结构对氚辐伏电池转换性能的影响

在辐射伏特效应同位素电池(辐伏电池)中,器件的辐伏转化性能不仅受限于换能器件所用的半导体材料、结构或加载放射源的种类,还受换能器件表面钝化层结构的影响。为在氚化钛源加载的平面单晶硅PN结辐伏电池(氚辐伏电池)中得到最佳的钝化效果,本文设计了3种不同的钝化层结构,考察其初始输出性能和抗辐射性能,并单独研究了氚化钛源出射的X射线对单晶硅换能器件的辐射损伤。结果显示:在辐伏电池初始输出性能方面,Si/SiO2/Si3N4结构Si/B-Si glass/Si3N4结构Si/Si3N4结构;在抗氚化钛源辐射损伤方面,Si/Si3N4结构Si/B-Si glass/Si3N4结构Si/SiO2/Si3N4结构,Si/B-Si glass/Si3N4结构具有最佳的抗X射线辐射衰减性能。氚化钛源出射的X射线对辐射损伤效应起主要作用,XPS结果显示,X射线长时间辐照造成了单晶硅表面平整性的破坏。     

氚/单晶硅器件辐伏电池模型及样机的长期稳定性研究

采用氚化钛源原位辐照和加速器低能电子束加速辐照实验,研究基于氚化钛/单晶硅PN结器件的氚辐伏电池模型和实验室组阵型电池原型样机的长期稳定性。测试电池模型和电池样机的氚辐伏输出随辐照时间的变化,分析辐照对单晶硅PN结型器件的本征暗特性和器件表面层材料缺陷的影响。结果表明,氚化钛源原位辐照电池模型在115 d的辐照中辐伏输出没有明显的衰减,辐照后单晶硅器件的本征暗特性曲线变化微小。电池模型的加速器低能电子束加速辐照实验表明,加速辐照在相同电子注量下对电池造成远大于氚源原位辐照的性能损伤,但损伤仅在辐照最初期快速产生,随后基本保持稳定,电子顺磁能谱（ESR）测试加速辐照60 min单晶硅器件材料的缺陷没有明显增加。组阵型实验室电池原型样机在64个月的室温储存中,基本单元的辐伏输出性能衰减比氚的自发衰变衰减有小幅增大,增大幅度小于11.4%;另外,组阵中单元之间串并联电连接有部分失效,这是后续应重点关注的问题。     

GaN器件辐伏同位素电池的电输出性能研究

利用⁶³Ni和3H源分别辐照两种可作为辐伏电池换能单元的GaN基PiN结型器件,其输出短路电流（I_sc）和开路电压（V_oc）分别为：对于⁶³Ni源,I_sc＝5.4 nA,V_oc＝771 mV;对于3H源,I_sc＝10.8 nA,V_oc＝839 mV。其开路电压显著优于单晶硅基器件辐伏电池的输出结果,但与理论值有一定的差距。可能是GaN材料生长过程中产生的缺陷、电极欧姆接触不良以及器件结构等原因,导致短路电流和开路电压未能达到期望值。这些是提升GaN换能单元辐伏电池的电输出性能应解决的重要技术问题。     

辐射伏特效应同位素电池换能单元的初步设计

初步设计制作3种辐射伏特效应同位素电池换能单元,测试其在固态63Ni源和3H源辐照下的输出电特性,对输出电特性进行数学解析模型分析并提出进一步改进设计的思路。结果表明,设计的换能单元在发射高能α同位素作用下,性能快速急剧退化;在2.96×108Bq的63Ni源辐照下,获得最大短路电流为28.4nA,最大开路电压为0.267V;在约5.09×109Bq的3H源辐照下,获得最大短路电流为62.8nA,最大开路电压为0.260V。当前换能单元参数还需进一步优化。     

辐射伏特效应同位素电池研究进展

辐射伏特效应同位素电池（RVIB）以其独特的优势,将在以IC和MEMS为基础的微系统领域发挥重要作用。近年来,关于RVIB的研究主要集中于换能单元的三维结构以及新型半导体材料器件方面,结合驱动源放射性同位素选择的多样性,使能量转换效率和稳定性等电输出性能得到改善。本文概略介绍了放射性同位素电池（RIB）,并针对近年来RVIB研究进展进行了系统综述,对其研究方向和应用前景作了展望。     

63Ni辐射伏特同位素电池原型的研制

利用理论研究获得的换能单元参数制备了单晶硅基换能单元,确定了⁶³Ni的加载工艺和原型电池的封装材料配方与技术,通过加速热老化和温度交变考核了原型电池的性能。结果表明：所制备的⁶³Ni辐射伏特效应微型同位素原型电池的短路电流I_sc、开路电压V_oc、最大输出功率P_max和衰变能-电能转换效率η分别为5.97 nA、88.0 mV、0.255 nW和0.561%;原理样机稳定输出超过220 d。     

PN结型器件在氚钛片辐照下电输出性能

用多片具有不同金属钛膜厚度和充氚量的氚钛片对两种单晶硅基PN结型器件进行了辐照,在线测量了它们的电输出性能并进行了定性分析.结果表明,在本文所采用的钛膜厚度和氚量级下,器件输出短路电流等随充氚量增加而小幅增大,但不成正比关系;器件的掺杂浓度、结深等结构参数对器件电输出性能影响较大.     

GaN与Si器件作为辐伏电池换能单元性能比较

利用63Ni和3H源等分别辐照两种可作为辐伏电池换能单元的GaN基和Si基PiN结型器件,比较了他们的输出电性能结果,以及两种器件的温度、辐照性能等。结果表明,GaN器件开路电压Voc比Si基器件有非常明显的提高,而短路电流Isc有较大下降;GaN基结型器件在高温和高能辐照条件下的性能比Si基结型器件有较大优势。     

GaAs基β辐射伏特效应微电池的参量优化设计研究

考虑放射性同位素源自吸收效应,提出基于半导体材料GaAs和同位素源⁶³Ni的微电池最优化设计方案,并通过蒙特卡罗程序MCNP模拟计算β粒子在半导体材料中的输运过程,对同位素源与半导体材料的厚度,换能单元PN结结深、耗尽区宽度、掺杂浓度、少子扩散长度,及电子空穴对的产生及收集情况等进行了研究和分析,给出了不同结深下,各物理参量的最佳设计值。在源活度为3.7×10⁷ Bq,PN结表面积为0.01 cm²时,提出的辐射伏特效应微电池最优化设计方案可实现：短路电流密度为379.68 nA/cm²,开路电压为1.375 V,填充因子为84.39%, 最大输出功率为440.4 nW/cm²,能量转化率为4.34%。     

半导体器件在辐射作用下的电学输出性能研究

半导体结型器件是决定辐射伏特效应同位素电池能量转换效率的核心部件。采用加速器产生的不同能量电子束和63Ni源的β射线对硅基PIN结型器件进行辐照,在线测量了其电学输出性能。当电子束能量为18 keV,可得到大于4%的能量转换效率;电子束能量为6 keV,能量转换效率在0.16%～0.33%之间; 活度2.96×108 Bq的63Ni源片辐照的能量转换效率为0.1%左右。     

氚钛片辐照硅基半导体器件电学输出性能

制备了多个不同厚度金属钛膜吸附不同量^3H的氚钛片,利用这些源片辐照硅基半导体器件,测试并分析了它们的电学输出性能。结果表明,这些氚钛片辐照硅基半导体器件可以输出电流,但由于金属钛对氚源β射线的阻挡,器件输出电流和最大输出功率与钛膜中贮氚量不呈正比增长关系,小的钛膜厚度有利于提高β射线能量利用率。     

Experimental study of intruder components in light neutron-rich nuclei via single-nucleon transfer reaction

Nuclear Science and Techniques - Schottky diodes and PN junctions were utilized as energy converting structures in ZnO-based betavoltaic batteries, in which 0.101121 Ci 63Ni was selected as the...     

Ionizing and non-ionizing kerma factors in silicon for China Spallation Neutron Source neutron spectrum

The quantification of ionizing energy deposition and non-ionizing energy deposition plays a critical role in precision neutron dosimetry and in the separation of the displacement damage effects and ionizing effects induced by neutron radiation on semiconductor devices. In this report, neutrons generated by the newly built China Spallation Neutron Source(CSNS) are simulated by Geant4 in semiconductor material silicon to calculate the ionizing and non-ionizing kerma factors. Furthermore, the integral method is applied to calculate neutron-induced ionizing at the CSNS and non-ionizing kerma factors according to the standard neutron nuclear database and the incident neutron spectrum. In addition, thermoluminescence dosimeters are utilized to measure the ionizing energy deposition and six series of bipolar junction transistors are used to measure the non-ionizing energy deposition based on their neutron damage constants. The calibrated kerma factors that were experimentally measured agreed well with the simulation and integral calculation results. This report describes a complete set of methods and fundamental data for the analysis of neutron-induced radiation effects at the CSNS on silicon-based semiconductor devices.     

Non-Destructive Screening for Thermal Second Breakdown

The feasibility of developing nondestructive screening techniques to determine the second breakdown vulnerability of semiconductor devices at submicrosecond pulse conditions has been demonstrated. In addition, it has been shownl that second breakdown can be nondestructively initiated under certain current limiting conditions without causing degradation in device operating characteristics or device second breakdown vulnerability level to subsequent pulses of electrical energy. A low energy current impulse damage mechanism at second breakdown initiation has also been observed. The experimental investigations were performed using 1N4148 diodes fabricated with various junction areas and a fixed diffusion depth. The complete results of this work are documented in Reference 1.     

The Effects of Gamma Radiation on Glass Coated Silicon Transistors

It has previously been found that semiconductor devices employing various gas encapsulation techniques exhibited significant alterations of their electrical responses under gamma and neutron exposure. Since the neutron bombardment produces bulk or volume damage, the device surface environment has little effect on the neutron induced changes. It has been observed that gamma exposures at doses well below the threshold for permanent damage have caused changes in several electrical characteristics of transistors and diodes which may be described as of surface origin. The parameters exhibiting significant change are the transistor ICBO and the reverse biased diode leakage current. This paper will describe the results of experiments performed to study the effects of exposure to gamma radiation on selected silicon transistors when coated with a low temperature melting glass. The surface sensitive parameters of the coated transistors degraded to a much lesser extent than observed for the gas encapsulated units, indicating a more favorable surface environment to minimize the effect of gamma radiation. Comparison of the glass coated transistors with devices employing a planar structure incorporating a silicon-oxide coating on the device material surface yielded comparable results. The results of these experiments are consistent with the model proposed to explain this effect and its various ramifications.     

用于同位素电池的储能复合电极的可行性研究

借鉴太阳能电池Ti/Pd/Ag复合电极的设计方案,将其优化设计为Ti/Pd/Au复合电极并加载氚源,以此验证同位素源与换能器件整合的可行性。在N型单晶硅基体上制备电极,为研究氚在电极中的行为,用氘气模拟氚气对电极进行同位素加载,采用XRD、SEM和四探针研究复合电极的储氚性能、微结构、电学性能等的变化。结果表明：复合电极能吸附氘并生成TiD_x（x≤2）,具备一定的储氚性能;在Ti与Si界面处出现了TiSi₂相,表明膜基间发生了合金化,这提高了复合电极与硅基体的结合强度,同时降低了接触电阻;10^-4 Ω•cm量级的表面电阻率基本可满足对电极导电性能的要求。由此可见,Ti/Pd/Au复合电极应用于伏特效应同位素电池是可行的。