RBS and GAXRD Contributions to Yttrium Implanted Extra Low Carbon Steel Characterization

Extra low carbon steel samples were yttrium implanted using an ion implantation method. Composition and structural studies were carried out before and after yttrium implantations by several analytical and structural techniques (Rutherford backscattering spectrometry, reflection high energy electron diffraction, scanning electron microscopy, X-ray diffraction, and glancing angle X-ray diffraction) to characterize the yttrium implantation effect on extra low carbon steel. The aim of this article is to show the contributions of Rutherford backscattering spectrometry (RBS) and glancing angle X-ray diffraction (GAXRD) to the determination of yttrium depth profiles in the samples. The results obtained by these techniques are compared to those of the other analyses performed in this work to show the existing correlation between composition and structural studies. Our results allow a better understanding of the effect of yttrium implantation in extra low carbon steel before studying their corrosion resistance at high temperature.     

Effects of annealing on the damage morphologies in BF 2 + ion implanted (1 0 0) silicon

The effects of annealing on the damage morphologies and impurity redistributions in BF ₂ ⁺ ion implanted (1 0 0) silicon were studied using secondary ion mass spectrometry (SIMS), transmission electron microscopy (TEM) and Rutherford backscattering (RBS) ion beam channelling technique. An amorphized silicon layer and a heavily-damaged crystal layer containing a high density of point-defect clusters, are formed on the silicon wafer by the ion implantation. SIMS depth profiles of both boron and fluorine are almost Gaussian distribution. Both furnace annealing and rapid thermal annealing cause recrystallization of the amorphized layer and formation of dislocation loop bands out of the point defects. SIMS depth profiles for both impurities show anomalous double peaks at the same depths. These facts suggest that the primary peak is due to the peak of the Gaussian distribution and the secondary peak due to the gettering effects of residual dislocation loop band.     

Biomimetic formation of hydroxyapatite investigated by analytical techniques with high resolution

Morphology, phase and chemical compositions of atmospheric plasma-sprayed (APS) hydroxyapatite (HAp) coatings were investigated by scanning electron microscopy (SEM), X-ray powder diffraction (XRD), proton-induced X-ray emission (PIXE) and Rutherford backscattering spectrometry (RBS). The study involved as-sprayed coatings and coatings incubated in simulated body fluid (rSBF) for up to 56 days. The results obtained using combined contributions from three complementary analytical techniques confirm that secondary Ca-deficient defect hydroxyapatite precipitated by a biomimetic process from the simulated body fluid onto the HAp coating surface after a prolonged induction time. Owing to its sensitivity proton-induced X-ray emission (PIXE) provides information on in vitro resorption of calcium phosphate ceramics and dynamic dissolution/precipitation events occurring during the incubation process.     

Study of Multilayer Thin Film Structures by Rutherford Backscattering Spectrometry

Technical Physics Letters - We have evaluated possibilities of using the method of Rutherford backscattering spectrometry (RBS) for depth profiling of multilayer thin-film structures containing...     

Characterization of surface profiles of LPCVD silicon nitride films by RBS profile

Abstract

A Rutherford backscattering spectrometry (RBS)‐profile was applied to the characterization of the surface profile of silicon nitride films prepared by low pressure chemical vapor deposition (LPCVD). This method detected inhomogeneity in the silicon nitride films and demonstrated Si‐richness near the interface. This method was also used to study the silicon nitride profiles associated with bird's beak formation in VLSI devices. This paper presents a scheme for an auto‐search routine for an RBS‐profile program. The potential of the RBS‐profile method for the characterization of LPCVD silicon nitride films are demonstrated.     

Barrier height enhancement in WSi x /GaAs Schottky diodes by rapid thermal annealing

The influence of rapid thermal annealing on WSi₂/GaAs and WSi_0.6/GaAs Schottky diodes was studied by means of Rutherford backscattering spectroscopy (RBS), particle induced X-ray emission spectroscopy (PIXE), X-ray diffraction (XRD) analysis and current-voltage electrical measurement. Despite the amorphicity of the layers remaining after annealing and only relatively minor changes in RBS and PIXE spectra, large barrier enhancements were registered, especially for WSi₂/GaAs diodes. For an explanation of this effect, the barrier height inhomogeneity concept is used.     

PIXE and RBS analysis of Fe-Cu nanoalloy

The present research has as a main objective, the possible control of precipitation process of the α-Fe phase from a matrix of Cu, where the initial state is homogenous, by mechanical alloying of some biphasic Fe-Cu nano-alloys.Proton-induced X-ray emission (PIXE) and Rutherford backscattering spectroscopy (RBS) methods were employed to study the nanostructure of Fe-Cu nano-alloys as affected by melt-spinning and thermal ageing. It was established by comparing the variation in the relative concentrations of components with the variation in the elemental depth profiles that the behaviour of Fe-Cu nanoalloy samples depends both on melt spinning and thermal ageing treatment.     

分析薄膜厚度与成分的卢瑟福背散射技术

对卢瑟福背散射分析技术的基本原理、试验设备、样品要求及数据处理方法进行了介绍,并举例分析了硅衬底上钛膜厚度的测定,以及钼衬底上钛钼合金膜的实际组分以及氦离子注入杂质的分布范围和实际剂量测定。讨论了卢瑟福背散射技术的发展和应用,介绍了弹性反冲、高能非卢瑟福散射和沟道技术三种分析方法。     

Redistribution of indium implanted in silicon due to thermal treatment and swift heavy ion irradiation

Silicon layers of 150 nm thickness supersaturated with indium up to ≈5 at% were prepared by multiple energy ion implantation. A redistribution of the implanted impurities caused by post-implantation annealing and following irradiation with swift Bi ions has been observed by means of Rutherford backscattering spectrometry in channelling configuration (RBS/C). It is demonstrated by TEM that the thermal decomposition of the supersaturated Si〈In〉 solution is accompanied by polycrystalline recrystallisation of amorphous silicon, precipitation of the second phase (In) both within the implanted layer and on the surface, as well as by impurity redistribution. The main features of the structure transformation under the influence of the Bi ion irradiation are discussed.     

Elaboration and characterization of yttrium implanted low manganese steel.

Low manganese steel samples were yttrium implanted using ion implantation technique. Sample compositions and structures were investigated before and after yttrium implantations to determine the yttrium distribution in low manganese steel. Yttrium implantation depth profiles were characterized using conventional techniques such as X-ray photoelectron spectroscopy (XPS), reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), glancing angle X-ray diffraction (GAXRD) and a nuclear analytical method: Rutherford backscattering spectroscopy (RBS). The aim of this study is to show that correlation between composition and structural analyses allows to understand the effect of implanting yttrium in low manganese steel.     

Advanced techniques for characterization of ion beam modified materials

Understanding the mechanisms of damage formation in materials irradiated with energetic ions is essential for the field of ion-beam materials modification and engineering. Utilizing incident ions, electrons, photons, and positrons, various analysis techniques, including Rutherford backscattering spectrometry (RBS), electron RBS, Raman spectroscopy, high-resolution X-ray diffraction, small-angle X-ray scattering, and positron annihilation spectroscopy, are routinely used or gaining increasing attention in characterizing ion beam modified materials. The distinctive information, recent developments, and some perspectives in these techniques are reviewed. Applications of these techniques are discussed to demonstrate their unique ability for studying ion-solid interactions and the corresponding radiation effects in modified depths ranging from a few nm to a few tens of μm, and to provide information on electronic and atomic structure of the materials, defect configuration and concentration, as well as phase stability, amorphization and recrystallization processes. Such knowledge contributes to our fundamental understanding over a wide range of extreme conditions essential for enhancing material performance and also for design and synthesis of new materials to address a broad variety of future energy applications.     

Non-destructive thickness determination of thin cobalt and cobalt disilicide layers on silicon substrates

The thickness of thin cobalt and cobalt disilicide layers has been measured by spectroscopic ellipsometry (SE). The results obtained by this non-destructive technique are compared with measurements done by two well-established but destructive techniques, namely Rutherford backscattering spectrometry (RBS) and high resolution transmission electron microscopy (HREM). The thickness values obtained by SE are in good agreement with the values measured by RBS and HREM. Spectroscopic ellipsometry allows one to determine the thickness of the metal and silicide layers on device wafers, thereby avoiding the need to use destructive techniques on test wafers or fully processed device wafers.     

Ge:Si:O evaporated alloys as a thermosensitive layer for large area bolometers

A study of the composition and properties of amorphous Ge:Si:O thin films deposited at low temperature by reactive coevaporation is presented. Films with various compositions are obtained by separately controlling the evaporation rates of germanium and silicon. The composition of films is measured by combining Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA) and energy dispersive X-ray analysis (EDX) techniques. Films are characterized by FTIR absorption spectroscopy, VIS-NIR transmittance and temperature behaviour of the electrical resistivity. The analysis of all experimental data shows that oxygen incorporation depends on the silicon content in the films. Oxygen atoms appear mainly bonded to silicon and not to germanium. An uniformed distribution rather than a cluster structure of silicon oxide into a germanium matrix is suggested. Both optical band gap energy and thermal coefficient of the resistivity vary with composition of films. Preliminary studies of thin films with similar composition obtained using reactive sputtering from a composite target evince the coexistence of SiO and GeO bonds.     

氮化铁梯度薄膜的制备

用对向靶溅射仪制备了具有梯度结构的氮化铁薄膜材料．卢瑟福背散射分析结果表明，铁、氮两种原子的密度沿膜厚度方向呈梯度变化．在薄膜中有ζ－Ｆｅ２Ｎ，ε－ＦｅｘＮ（２＜ｘ＜３），γ′－Ｆｅ４Ｎ和α″－Ｆｅ１６Ｎ２等物相．振动样品磁强计测试结果表明部分梯度膜的饱和磁化强度值接近纯铁膜，膜面富铁的梯度样品的矫顽力与基底富铁的梯度样品的矫顽力相差很大。     

Combinatorial Ion Synthesis and Cathodoluminescence Analyses of Materials Libraries on Thermally Grown SiO2

We first report a method combining ion implantationand physical masking to generate material libraries of various ion-implanted samples. This approach offers rapid synthesis of samples with potential new compounds formed in the matrix, which may have specific luminescent properties. The depthresolved cathodoluminescence (CL) measurements, accompanied with Rutherford backscattering spectrometry (RBS) and proton elastic scattering (PES) revealed some specific optical properties in the samples correlated with implanted ion distributions. These measurements are capable of nondestructively and rapidly characterizing the composition and the inhomogeneity of the combinatorial film libraries, which may determine their physical properties.     

Microstructures of a Pt/Ni/C multilayer system: an X-ray reflectivity and ion scattering study

Microstructural characterization of a synthetic periodic and graded Pt/Ni/C multilayer system by X-ray reflectivity and ion scattering techniques is presented. The experimental reflectivity data are fitted with a theoretical multi-trilayer model with graded periodicity which increases from substrate to film surface along the surface normal direction. The increase in periodicity is found to be due to a linear increase in C-layer thickness from the bottom to the top, with a change of slope nearly at the middle of the multilayer stack. The thicknesses of Pt and Ni layers, the variation of C-layer thickness with depth, interface roughness of Pt/Ni, Ni/C, C/Pt interfaces are determined from the analysis of the reflectivity data. Rutherford backscattering spectrometry measurements were also made on the same sample. Simulated Rutherford back scattering spectrometry data using the parameters obtained from the analysis of the X-ray reflectivity data agree well with the measured Rutherford backscattering spectrum.     

Surface analysis by RBS and NRA

The use of Rutherford backscattering spectroscopy (RBS) and nuclear reaction analysis (NRA) for surface analysis is discussed. For the RBS technique, emphasis is laid on cases which are not discussed in existing review articles of the subject. The present work intends to describe a calculation procedure with the aid of which it is possible to obtain the depth distribution of a high concentration and non-homogeneously binary compound sample. This complicates the determination of the stopping and scattering cross-sections of the incoming particles at a certain depth below the surface. In addition, a method is described by which the thickness and composition of a two-element film, deposited on a single-element substrate, can be determined by RBS. One advantage with the method presented here is that it is not necessary to detect any signals from the lighter component of the film, in order to determine the composition. This improves the RBS technique to study light elements in connection with thin layers. Finally, the NRA method to measure concentration distributions of deuterium beneath a surface is presented. In the case discussed here, the analysis is done by the D(³He, H)⁴He nuclear reaction.     

Study on structure of AlGaN on AlN interlayer by synchrotron radiation XRD and RBS

The AlGaN samples have been grown on AlN interlayer (IL) by metalorganic vapor phase epitaxy (MOVPE). The effects of AlN interlayer (IL) on improvement of crystalline quality of AlGaN and Al incorporation efficiency were investigated. The samples were characterized by synchrotron radiation X-ray diffraction (XRD) and MeV He ion Rutherford backscattering spectrometry (RBS). The AlN IL played a role in suppressing edge threading dislocations (TDs) and enhancing the screw ones. It also changed the state of stress in AlGaN from tension to compression. Crack-free AlGaN films were grown successfully by inserting AlN IL.     

钇硅化物的合成及相变研究

利用离子注入的方法在Si（111）衬底上制备出了具有六方结构的稀土硅化物YSi₂埋层,并对其进行了结构及电学特性的研究.钇注入剂量为1×10¹⁸Y⁺cm^-2,注入能量为100keV.利用X射线衍射（XRD）及卢瑟福背散射技术（RBS）得到了注入样品的结构相.结果显示,在对衬底Si进行Y离子注入的过程中就已经形成了YSi₂相,在随后的红外光辐照退火过程中,样品呈现出了取向生长的趋势.利用RBS的测量分析了注入层中的Y离子在样品不同深度处的浓度分布.利用四探针法对刚注入的样品进行了红外光辐照过程中的原位方块电阻测量,结果显示,当退火温度升到160℃时,样品中形成了斜方的YSi亚稳相;而240℃则对应着YSi-YSi₂的相转变点。     

Manganese depth-concentration profiles in ion-implanted silicon studied by Rutherford backscattering

Variation of the depth-concentration profiles of manganese atoms implanted into silicon was studied by the Rutherford backscattering (RBS) method in samples irradiated to various doses and annealed at different temperatures. The results are consistent with the analogous data obtained by an independent method. The post-implantation thermal annealing affects the distribution of Mn and other impurities, in particular, oxygen. The RBS method provides data both on the distribution of implanted dopants and on their interaction with other impurities.