孔金属化印制板直接金属化工艺

概述了利用ｐｄ／Ｓｎ催化剂活化和后活化处理有机结合的直接电镀工艺，适用于制造孔金属化印制板。     

LSI中的金属化工艺

钨丝加热法蒸发纯Al,采用“U”型状,在我国首先研制出双极LSI。为了缩小芯片面积,防止浅结漂发射区工艺纯Al布线后造成EB结短路,研制成功钨丝加热法蒸发Al-Si薄膜。为进一步缩小芯片面积,采用双层布线工艺,又研制成功钨丝加热法蒸发Al-Cu-Si合金膜。本文主要介绍三种薄膜蒸发工艺及应用。     

氮化铝陶瓷及其金属化工艺

本文综述了最近几年来 A1N 陶瓷的发展动态,介绍了国内外有关 A1N 陶瓷的金属化工艺,指出了A1N 陶瓷进一步发展和实用化所必须注意以及要解决的几个技术关键问题。     

两种孔金属化工艺的运用体会

直接电镀工艺和化学沉铜工艺是印制电路板孔金属化的两大主要工艺。虽然两大主要工艺目的都是使线路板两面实现互连,但其采用的原理不一样,配方相差很大,应用的设备也相差很大。文中从两种工艺优缺点比较、工艺流程及工序作用的比较、工艺参数及控制的比较着手,在应用体会中精辟分析了两种工艺应用中各个侧重的控制点。读者可根据自身特点选用相应的工艺。     

薄膜电路孔金属化工艺

孔金属化技术在混合集成电路中的应用十分广泛,它对减小电路串扰和插入损耗、增加电路散热和可靠性方面具有较大的价值,笔者从工艺的角度出发,应用薄膜制造技术对孔金属化的制作过程进行了分析和研究,并对其在微波产品中的应用进行了介绍。     

压电陶瓷表面金属化工艺的改进

分别采用磁控溅射技术及真空蒸发技术对压电陶瓷基片进行表面金属化处理,比较了该两种工艺对压电陶瓷基片表面金属电极的银层结合力、耐焊接热特性的影响.结果表明,较之真空蒸发技术,磁控溅射技术可使压电陶瓷基片表面金属电极的银层结合力提高103％,耐焊接热时间大于30 s;该技术还可提高压电陶瓷基片表面金属化的处理效率,使贵金属...     

陶瓷-金属封接中的二次金属化工艺

叙述了二次金属化在陶瓷 金属封接质量中的重要性和二次金属化工艺。     

微波数字复合基板金属化孔工艺方法

微波数字复合基板是将微波电路与数字电路集合在一起的新型复合多层基板,其体积的缩小实现了雷达天线系统的轻量化和小型化.在复合基板的制作过程中,金属化孔的可靠性是保证天线电性能指标的关键.主要介绍了微波数字复合基板中微盲孔孔金属化及提高金属化孔可靠性的工艺方法.     

PLC分路器关键生产工艺的研究

开发了一种在多芯光纤阵列(FA)固化胶中添加适当比例的纳米石英粉末的新工艺,有效提高了平面光波导(PLC)分路器产品的耐环境性能,使其可通过Telcordia标准中高温高湿环境试验。该新工艺不增加生产成本,不影响生产效率,但可大大提高产品的核心竞争力。     

GaAs阴极激活铯源质量对成像器件性能的影响

为了解决三代微光器件研究中出现的阴极灵敏度低、光电发射不均匀、稳定性差等问题,重点开展了铯源质量对阴极性能产生影响的试验研究。结果表明,激活铯源纯度、装配结构、铯源与阴极距离对阴极光电发射灵敏度、均匀性影响最大。铯源出口孔径多少大小及射出方向是阴极产生暗班的主要原因。在铯源材料成分结构与阴极距离确定之后,阴极灵敏度的高低主要决定于对铯源的除气工艺,通过对铯源除气工艺进行优化,制备出了阴极灵敏度大于1700μA/lm三代微光器件。     

新型LDI使HDI／BUM板实现低成本规模化生产

文章概述了新型LDI技术的两大改进,使它在HDI/BUM板生产中实现低成本规模化生产。     

陶瓷金属化批量生产实用工艺技术

本文叙述了陶瓷金属化批量生产实用工艺技术。重点介绍了涂膏工艺、绕结工艺及镀镍工艺。经过实践验证,工艺的适应范围较广,在科研和生产中具有实用性。     

Mass Production of High‐Quality Transition Metal Dichalcogenides Nanosheets via a Molten Salt Method

2D transition metal dichalcogenides (TMDs) are well suited for energy storage and field–effect transistors because of their thickness‐dependent chemical and physical properties. However, as current synthetic methods for 2D TMDs cannot integrate both advantages of liquid‐phase syntheses (i.e., massive production and homogeneity) and chemical vapor deposition (i.e., high quality and large lateral size), it still remains a great challenge for mass production of high‐quality 2D TMDs. Here, a molten salt method to massively synthesize various high‐crystalline TMDs nanosheets (MoS₂, WS₂, MoSe₂, and WSe₂) with the thicknesses less than 5 nm is reported, with the production yield over 68% with the reaction time of only several minutes. Additionally, the thickness and size of the as‐synthesized nanosheets can be readily controlled through adjusting reaction time and temperature. The as‐synthesized MoSe₂ nanosheets exhibit good electrochemical performance as pseudocapacitive materials. It is further anticipates that this work will provide a promising strategy for rapid mass production of high‐quality nonoxides nanosheets for energy‐related applications and beyond.     

Defect-Induced Electron Redistribution between Pt-N3S1 Single Atomic Sites and Pt Clusters for Synergistic Electrocatalytic Hydrogen Production with Ultra-High Mass Activity

A N, S co-doped carbon with abundant vacancy defects (NSC) anchored Pt single atoms (SAs) and nanoclusters (NCs) derived from coal pitch by a self-assembly-pyrolysis strategy is reported and a defect-induced electron redistribution effect based on Pt SAs-Pt NCs/NSC catalyst is proposed for electrocatalytic hydrogen evolution reaction (HER). The optimized catalyst featuring Pt-N₃S₁ SAs and Pt NCs dual active sites exhibit excellent HER activity with an overpotential of 192 mV at a current density of 400 mA cm⁻², a turnover frequency of 30.1 s⁻¹ at an overpotential of 150 mV, which the mass activity is 13716 mA mg_Pt⁻¹, 7.4 times higher than that of 20% Pt/C catalyst. In situ Raman revealsa direct correlation between the defect structure of the catalyst and hydrogen adsorption during the reaction process. Density functional theory calculation shows the defect-induced electron redistribution between Pt-N₃S₁ SAs and Pt NCs. The electrons are transferred from Pt NCs to Pt SAs, which increases the number of electrons on the surface of Pt SAs and enhances the adsorption ability of H⁺. Meanwhile, the dissociation ability of H* on the Pt NCs is promoted, thus synergistically promoting the HER process.