导体介质组合体电磁分析的建模与计算

为提高导体介质复合目标电磁散射分析的效率,采用一类新的表面混合场积分方程进行求解,该方程通过伽略金方法建立的阻抗矩阵具有良好的条件数.分析了多区域连接边上的电磁流分布和基函数的定义,然后根据边界条件推导了广义EFIE-CFIE-JMCFIE方程形式,最后比较了不同积分方程建立阻抗矩阵的收敛性.数值算例表明该方法能明显提高计算效率,实现导体介质复合目标电磁散射分析快速、准确的求解.     

混合场积分方程结合MLFMA分析导体介质复合目标电磁散射问题

针对组合目标电磁散射问题,采用一类新的混合场积分方程进行分析.通过合理选择比例系数组合表面电场和磁场积分方程,构造出具有良好收敛性的阻抗矩阵.MLFMA的迭代求解采用广义最小残差方法(GMRES),结合预条件技术进一步减少迭代次数,加速计算并提高处理电大尺寸导体介质复合目标的能力.研究了几类典型目标电磁散射特性并比较了计算效率,数值算例验证了该方法的准确性和高效性.     

面向工程应用能力提升的电磁散射高效数值分析:进展与挑战

本文介绍了在先进高效数值方法—多层快速多极子方法(Multilevel Fast Multipole Algorithm,MLFMA)分析框架下,旨在进一步提升数值求解能力和工程应用能力的研究成果,以及结合相关成果的应用研究;重点讨论了用于超电大目标(特别是含腔目标)散射分析的各型相位提取(Phase Extracted,PE)基函数、用于金属-厚介质层复合结构散射建模的电流磁流混合场积分方程(Electric and Magnetic Current Combined Field Integral Equation,JMCFIE)、用于天线罩及雷达仓散射计算的多层介质散射的多层薄介质层(Thin Dielectric Sheet,TDS)边界条件方法、用于多尺度结构电磁散射建模的快速笛卡尔展开方法;并给出了相关应用实例.最后,对当前仍然存在的主要挑战和可能的对策进行了简略的讨论和展望.     

适用于电磁混合源散射求解的新型积分方程数值方法

含腔导电目标电磁散射的混合场积分方程求解方法中,将出现电场积分方程算子和磁场积分方程算子同时作用于待求混合源的复杂情况,使计算复杂度大为提高.本文导出"均衡混合场积分方程"及其数值方法,使作用于电流和磁流的积分算子完全相同,大大简化了计算.均衡混合场积分方程与多层快速多极子方法(MLFMA)结合使用,可以方便地求解含腔导体目标的电磁散射.本文给出的数值实例充分证明了这一方法的高精度和高效率.     

笛卡尔展开算法高效求解增广电场积分方程

将多层快速笛卡尔展开算法(Multilevel Accelerated Cartesian Expansion Algorithm,MLACEA)用于求解理想导体目标的增广电场积分方程(Augmented Electric Field Integral Equation,AEFIE),详细推导了基于AEFIE-矩量法(Method of Moments,MoM)的MLACEA算法的具体实现过程.计算实例表明,在求解低频电磁散射问题及电路问题时基于AEFIE-MoM矩量法的MLACEA算法既具有非常高的计算精度、又可大幅度降低MoM的计算复杂度,使得其计算量和计算机内存需求可由原来MoM的O(N2)量级降低至MLACEA算法的O(N)量级.     

基于统计型积分方程的高斯粗糙面散射计算

基于统计型积分方程方法(Stochastic Integral Equation Method, SIEM)实现了高斯粗糙面的高效散射计算.与传统求解随机粗糙面散射特性的蒙特卡洛法(Monte Carlo Method, MC)相比, 该方法采用统计面元格林函数, 考虑粗糙面高斯随机分布的场源耦合影响, 只需要计算一次矩阵元素和待求未知量, 提高了求解粗糙面问题的计算效率.数值结果显示, 文中方法与MC吻合, 计算效率得到显著提高.     

多层自适应交叉近似加速的旋转对称体矩量法

为了更有效地分析旋转对称电大物体的电磁散射问题,提出了一种针对旋转对称矩量法的多层自适应交叉近似加速方法,并分别应用于基于三角形基函数和3阶Hermite基函数的旋转对称矩量法.使用所提方法加速混合场积分方程下旋转对称体矩量法的单模式与多模式阻抗矩阵的构建过程时,计算得到的远场雷达散射截面积与传统旋转对称矩量法的结果吻合良好,且计算效率明显提高.     

均匀有耗涂层目标的电磁散射分析

采用表面电场和磁场积分方程及矩量法计算了涂层导体/介质目标的双站雷达散射截面,介质是均匀各向同性有耗的.首先利用等效原理建立介质/导体表面的电磁场积分方程,然后采用伽略金法将积分方程组转化为矩阵,求解出涂层表面的等效电磁流后,就可计算目标的散射场.通过对均匀有耗涂层导体球利用解析法[1]和矩量法两种方法进行计算,验证了本文方法的准确性.     

磁化等离子体覆盖导体散射问题的FE/BI方法分析

基于矢量有限元方法和边界积分方程,推导了分析三维导体表面覆盖各向异性磁化等离子体电磁散射问题的矢量有限元/边界积分(FE/BI)方法公式,并将该方法推广到外磁场沿任意方向时磁化等离子体的情形。应用该方法计算了磁化等离子覆盖导体目标的双站雷达散射截面(RCS),分析了等离子体厚度、密度、碰撞频率和外磁场方向对雷达散射截面的影响。数值计算结果表明:在导体表面覆盖各向异性磁化等离子体并且选取合适的参数,能够有效地减少雷达散射截面。     

E-P-AMCBFM分析介质与PEC混合体的电磁散射

使用基于表面积分方程的矩量法来分析介质与理想导体混合体的电磁散射是计算电磁学的一大热点。对理想导体目标体表面建立电场积分方程,在介质目标体表面建立PMCHW方程组,与基于矩阵分块技术的自适应修正特征基函数法结合,对介质涂敷理想导体目标体的电磁散射进行分析,将其称之为EFIE-PMCHW-AMCBFM(E-P-AMCBFM)。并讨论不同参数如基函数阶数,矩阵块间重叠区域等对计算效率的影响,数值结果表明E-P-AMCBFM对于处理介质-理想导体混合体的电磁散射问题具有较高的精度和效率。     

Interfacial reaction and shear strength of SnAgCu-xNi/Ni solder joints during aging at 150 °C

The interfacial microstructure and shear strength of Sn3.8Ag0.7Cu-xNi (SAC-xNi, x = 0.5, 1, and 2) composite solders on Ni/Au finished Cu pads were investigated in detail after aging at 150 °C for up to 1000 h. The interfacial characteristics of composite solder joints were affected significantly by the weight percentages of added Ni micro-particles and aging time. After aging for 200 h, the solder joints of SAC, SAC-0.5Ni and -1Ni presented duplex intermetallic compound (IMC) layers regardless of the initial interfacial structure on as-reflowed joints, whose upper and lower IMC layers were comprised of (CuNi)₆Sn₅ and (NiCu)₃Sn₄, respectively. Only a single (NiCu)₃Sn₄ IMC layer was ever observed at the SAC-2Ni/Ni interface on whole aging process. Based on the compositional analysis, the amount of Ni within the IMC regions increased as the proportion of Ni addition increased. The IMC (NiCu)₃Sn₄ layer thickness on the interface of SAC and SAC-0.5Ni grew more slowly when compared to that of SAC-1Ni and -2Ni, while for the (CuNi)₆Sn₅ layer the reverse is true. Except the IMCs sizes are increased with increased aging time, the interfacial IMCs tended to transfer their morphologies to polyhedra. In all composite joints testing, the shear strengths were approximately equal to non-composite joints. The fracturing observed during shear testing of composite joints occurred in the bulk solder, indicating that the SAC-xNi/Ni solder joints had a desirable joint reliability.     

有机发光二极管中ADN掺杂ErQ的1.54μm电致发光

自行设计了基于8-羟基喹啉铒(ErQ)为发射层(EMLs)和二硝酰胺铵(ADN)为蓝光主体材料的近红外有机发光二级管.器件的基本结构为(p-Si/NPB/EML/Bphen/Bphen:Cs2CO3/Sm/Au),设计并比较了三套不同发射层结构(ErQ/ADN为双层结构器件,(ErQ/ADN)×3为多层结构器件,ErQ:ADN为掺杂结构器件)的器件.三组器件在一定的偏压下,均可发出1.54μm的光,对应三价铒离子4I13/2→4I15/2的跃迁.其中,ADN:ErQ(1∶1)掺杂结构的近红外电致发光强度是ADN/ErQ双层结构中的三倍.此外,不同掺杂浓度的ADN:ErQ复合膜做了以下表征:吸收谱、光致发光谱和荧光寿命谱.实验结果证实了在近红外电致发光过程中存在从ADN主体分子到ErQ发射分子的高效率的能量转移.     

BNBST无铅压电陶瓷的制备工艺研究

设计了（Bi0.55Na0.5）1-X（BaaSrb）xTiO3（BNBST[100x-100a／100b]）无铅压电陶瓷新体系。该体系压电陶瓷具有工艺特性及压电响应好，压电常数高的特点，且有实际应用前景的新型压电陶瓷材料体系。采用传统的陶瓷工艺制备了（Bi0.55Na0.5）1-X（BaaSrb）xTiO3无铅压电陶瓷，研究了制备工艺参数对其物化结构性能的影响。生料的热重-差热（TGA-DTA）分析表明，粉料合成过程中，先是SrTiO3、BaTiO3的形成，然后是（Bi0．5Na0．5）Tio，的形成，同时三者形成固溶体；密度测试表明，陶瓷的体积密度随烧结温度的升高而增大，可较易获得理论密度94％的陶瓷；X-射线能谱分析（EDAX）研究表明，陶瓷的Bi、Na的挥发随着烧结温度的升高而加剧。研究结果表明，要制备性能优良的无铅压电陶瓷，需要精确控制制备工艺。     

Emerging interconnects: a state-of-the-art review and emerging solutions

Aluminium was a primary material for interconnection in integrated circuits (ICs) since their inception. Later, copper was introduced as interconnect material which has better metallic conductivity and resistance to electromigration. As the aggressive technology scaling continues, the copper resistivity increased because of size effects, which causes increase in delay, power dissipation and electromigration. The need to reduce the resistor-capacitor??????? delay, dynamic power utilisation and the crosstalk commotion is as of now the fundamental main impetus behind the presentation of new materials. The purpose of this paper is to do a survey of interconnect material used in IC from introduction of ICs to till date. This paper studies and reviews new materials available for interconnect application which are optical interconnects, carbon nanotube (CNT), graphene nanoribbons (GNRs) and silicon nanowires which are alternatives to copper. While doing a survey of interconnect material, it is found that multiwalled CNTs, multilayer GNR and mixed CNT bundles are promising candidates and are ultimate choice that can strongly address the problems faced by copper but on integration basis copper would last for coming years.     

钠离子对poly(dT).poly(dA).poly(dT)三螺旋DNA分子呼吸模式的影响

利用分子结构的螺旋对称性,建立了一个包括钠离子的三链DNA分子poly(dT)*poly(dA)*poly(dT)的晶格动力学模型,计算了poly(dT)*poly(dA)*poly(dT)的氢键呼吸模式.结果发现钠离子的加入明显地淬灭了位于较低频率的几个最为强烈的Hoogensteen氢键呼吸模式,而对Watson-Crick氢键呼吸模式影响不明显,这说明钠离子能提高poly(dT)*poly(dA)*poly(dT)三螺旋结构的稳定性.该计算结果很好地解释了poly(dT)*poly(dA)*poly(dT)的热融化实验.     

聚对苯撑苯并双(口恶)唑发光及其器件制备

采用光谱技术,研究了聚对苯撑苯并双(口恶)唑(PBO)溶液的光敏发光特性,并用相对法估算出溶液发光效率在50%范围.结合光谱技术、半导体电学和电化学等研究手段,具体研究了以PBO为发光层的单层电致发光器件,研究结果显示,电致发光与薄膜的光致发光有具有相同的发光中心,峰值位于510 nm左右.同时发现,由于存制备过程中不同处理条件使得不同厚度薄膜残留的掺杂物质浓度不同,从而引起薄膜的导电性的不同.使得器件的阈值场强随PBO厚度的减小而逐渐增加.     

人小肠粘膜免疫酶的定位研究—光镜和电镜免疫组织化学染色法

本文对免疫酶组织化学的样品制备程序和染色方法做了详细的阐述。用直接法、间接法和ABC法,对人小肠免疫酶的定位,进行了光镜和电镜的观察,染色阳性反应显著,获得了满意的效果。并对染色技巧做了分析和探讨。     

Arsenic deposition as a precursor layer on silicon (211) and (311) surfaces

We investigate the properties of arsenic (As) covered Si(211) and Si(311) surfaces by analyzing data from x-ray photoelectron spectroscopy (XPS) and low-energy electron diffraction (LEED) images. We then create a model using total surface energy calculations. It was found that both Si(211) and Si(311) had 0.68±0.08 surface As coverage. Si(211) had 0.28±0.04 Te coverage and Si(311) had 0.24±0.04 Te coverage. The Si(211) surface replaces the terrace and trench Si atoms with As for a lower surface energy, while the Si edge atoms form dimers. The Si(311) surface replaces all terrace atoms and adsorbs an As dimer every other edge site. These configurations imply an improvement in the mean migration path from the bare silicon surface by allowing the impinging atoms for the next epitaxial layer, tellurium (Te), to bind at every other pair of edge atoms, and not the step terrace sites. This would ensure a nonpolar, B-face growth.     

盲多用户检测技术中的恒模算法分析

恒模算法（CMA）是一种广泛应用于阵列处理、均衡和多用户检测中的盲算法。现对恒模算法及其在盲多用户检测技术中的应用进行了分析,并指出其研究方向。     

Joint estimation of TOA and DOA in IR-UWB system using a successive propagator method

Impulse radio ultra-wideband (IR-UWB) ranging and positioning require accurate estimation of time-of-arrival (TOA) and direction-of-arrival (DOA). With receiver of two antennas, both of the TOA and DOA parameters can be estimated via two-dimensional (2D) propagator method (PM), in which the 2D spectral peak searching, however, renders much higher computational complexity. This paper proposes a successive PM algorithm for joint TOA and DOA estimation in IR-UWB system to avoid 2D spectral peak searching. The proposed algorithm firstly gets the initial TOA estimates in the two antennas from the propagation matrix, then utilises successively one-dimensional (1D) local searches to achieve the estimation of TOAs in the two antennas, and finally obtains the DOA estimates via the difference in the TOAs between the two antennas. The proposed algorithm, which only requires 1D local searches, can avoid the high computational cost in 2D-PM algorithm. Furthermore, the proposed algorithm can obtain automatically paired parameters and has better joint TOA and DOA estimation performance than conventional PM algorithm, estimation of signal parameters via rotational invariance techniques algorithm and matrix pencil algorithm. Meanwhile, it has very close parameter estimation to that of 2D-PM algorithm. We have also derived the mean square error of TOA and DOA estimation of the proposed algorithm and the Cramer-Rao bound of TOA and DOA estimation in this paper. The simulation results verify the usefulness of the proposed algorithm.