高密度封装技术的发展

本文简要介绍了BGA与CSP的概念、发展现状、应用情况及发展趋势等.BGA/CSP是现代组装技术的两个新概念,它们的出现促进SMT(表面贴装技术)与SMD(表面贴装元器件)的发展和革新,并将成为高密度、高性能、多功能及高I/O数封装的最佳选择.     

高密度封装技术的发展

摘要:重点介绍了BGA与CSP高密度封装技术的发展现状及趋势。BGA与CSP是现代组装技术的两个新概念,它们的出现促进了表面贴装技术(SMT)与表面贴装元器件(SMD)的发展和革新,并将成为高密度、高性能、多功能及高I/O数封装的最佳选择。     

电子封装技术的发展趋势

本文重点介绍了 BGA,CSP 及 IC 基板的发展现状与趋势。BGA 与 CSP 是20世纪封装技术的两个新概念,它们的出现极大地促进了表面贴装技术(SMT)与表面贴装元器件(SMD)的发展和革新,成为高密度、高性能、多功能及高 I/O IC 封装的最佳选择之一。     

高密度封装技术的发展

本文简要介绍了BGA与CSP的概念、发展现状、应用情况及发展趋势等。BGA／CSP是现代组装技术的两个新概念，它们的出现促进SMT(表面贴装技术)与SMD(表面贴装元器件)的发展和革新，并将成为高密度、高性能、多功能及高I／O数封装的最佳选择。     

高密度封装技术的发展

本简要介绍了BGA与CSP的概念、发展现状、应用情况及发展趋势等。BGA／CSP是现代组装技术的两个新概念,它们的出现促进SMT（表面贴装技术）与SMD（表面贴装元器件）的发展和革新,并将成为高密度、高性能、多功能及高I／O数封装的最佳选择。     

BGA表面贴装技术及过程控制

SMT(表面贴装技术)与SMD(表面贴装器件)不断发展更新,BGA顺应时代潮流成为高频化、高I/O数及小型化封装的最佳选择.但是BGA焊接后焊点质量的保证及其返修却是令生产者头疼的问题.简要介绍BGA器件、BGA器件发展现状和应用情况,重点论述BGA生产中应用的检测方法和返修工艺.     

BGA技术与质量控制

BGA是现代组装技术的新概念,它的出现促进SMT(表面贴装技术)与SMD(表面贴装器件)的发展和革新,并将成为高密度、高性能、多功能及高I/O数封装的最佳选择。本文简要介绍了BGA的概念、发展现状、应用情况及一些生产中应用的检测方法等,并讨论了BGA的返修工艺。     

BGA技术与质量控制

BGA是现代组装技术的新概念,它的出现促进SMT(表面贴装技术)与SMD(表面贴装元器件)的发展和革新,并将成为高密度、高性能、多功能及高I/O数封装的最佳选择。该文简要介绍了BGA的概念、发展现状、应用情况以及一些生产中应用的检测方法等,并讨论了BGA的返修工艺。     

BGA焊点的质量控制

BGA是现代组装技术的新概念,它的出现促进SMT(表面贴装技术)与SMD(表面贴装元器件)的发展和革新,并将成为高密度、高性能、多功能及高I/O数封装的最佳选择.本文结合实际工作中的一些体会和经验,就BGA焊点的接收标准、缺陷表现及可靠性等问题展开论述,特别对有争议的一种缺陷空洞进行较为详细透彻的分析,并提出一些改善BGA焊点质量的工艺改进的建议.     

BGA技术与质量控制

BGA(BallGridArray球栅阵列封装 )是现代组装技术的新概念 ,它的出现促进SMT(表面贴装技术 )与SMD(表面贴装元器件 )的发展和革新 ,并将成为高密度、高性能、多功能及高I/O数封装的最佳选择。简要介绍了BGA的概念、发展现状、应用情况以及一些生产中应用的检测方法等 ,并讨论了BGA的返修工艺     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.