Low-temperature CMOS 8 × 8 bit multipliers with sub-10-ns speeds

Low-temperature (77, 4.2 K) operation is proposed for bulk CMOS devices for use in super-fast VLSI applications. Symmetrical variations of both types of MOSFET parameters with respect to temperature and latchup immunity make CMOS a very promising device technology at low temperatures. To demonstrate the performance advantage of circuit operation at low temperatures, multipliers with two different circuit configurations are designed and fabricated with a gate length of 1.3 µm. Multiplication speeds of 8.0 and 6.6 ns are obtained with CMOS circuit configurations at 4.2 K and with pulsed-p-load/CMOS circuit configurations at 77 K, respectively.     

Process and device performance of 1 µm-channel n-well CMOS technology

The process and device performance of 1 µm-channel n-well CMOS have been characterized in terms of substrate resistivities of 40 and 10 Ω.cm, substrate materials with and without an epitaxial layer, n-well surface concentrations ranging from5 times 10^{15}to4 times 10^{16}cm^-3, n-well depths of 3, 4, and 5 µm, channel boron implantation doses from2 times 10^{11}to1.3 times 10^{12}cm^-2, and effective channel lengths down to 0.6 µm. The deeper n-well more effectively improved the short-channel effects in p-channel MOSFET's having lower n-well surface concentrations. The impact-ionization current of the 0.9 µm n-channel MOSFET started to increase at a drain voltage of 5.2 V, while that of the 0.6 µm p-channel MOSFET did not increase until the drain voltage exceeded 12 V. Minimum latchup trigger current was observed when the output terminal of an inverter was driven over the power supply voltage. This minimum latchup trigger current was improved about 25 to 35 percent by changing the n-well depth from 3 to 5 µm and was further improved about 35 to 75 percent by using a substrate resistivity of 10 Ω.cm instead of 40 Ω.cm. The epitaxial wafer with a substrate resistivity of 0.008 Ω.cm improved the minimum latchup trigger current by more than 40 mA. It was estimated from the inverter characteristics that the effective mobility ratio between surface electrons and holes is about 1.4 at effective channel lengths of 1.0 µm for p-channel MOSFET's and 1.4 µm for n-channel MOSFET's. The optimized 1 µm-channel n-well CMOS resulted in a propagation delay time of 200 ps with a power dissipation of 500 µW and attained a maximum clock frequency of 267 MHz in a static ÷ 4 counter. The deep-trench-isolated CMOS structure was demonstrated to break through the scaling effect drawback of n-well depth and surface concentration.     

An 8-ns 256K ECL SRAM with CMOS memory array and battery backupcapability

The authors describe the first high-performance, high-density ECL SRAM (emitter-coupled-logic static random-access memory) compatible with battery backup techniques. The 256K device has a measured access time of 8 ns. Fabricated in a 0.8-μm BiCMOS process, the chip uses 117-μm ², full-CMOS, six-transistor memory cells and measures 6.5×8.15 mm². The design methodology described here illustrates the extent to which bipolar devices can be integrated into the periphery of a CMOS memory array. This integration was achieved through the use of a novel sensing scheme which provided three stages of bipolar differential sensing, with the first stage of sensing taking place directly on the bit lines     

Thermal aware design and comparative analysis of a high performance 64-bit adder in FD-SOI and bulk CMOS technologies

Thermal behaviours of high-performance digital circuits in bulk CMOS and FDSOI technologies are compared on a 64-bit Kogge-Stone adder designed in 40 nm node. Temperature profiles of the adder in bulk and FDSOI are extracted with thermal simulations and hotspot locations are studied. The influence of local power density on peak temperature is examined. It is shown that high power density devices have significant influence on peak temperature in FDSOI. It is found that some group of devices that perform the same function are the most prominent heat generators. A modification on the design of these devices is proposed which decreases the hotspot temperatures significantly.     

A 4-GS/s 4-bit Flash ADC in 0.18- μm CMOS

A 4-bit noninterleaved flash ADC implemented in 0.18-mum digital CMOS achieves a sampling rate of 4 GS/s. A 32 mum by 32 mum, on-chip differential inductor in each comparator extends the sampling rate without an increase in power consumption. A combination of DAC trimming and comparator redundancy reduces the measured DNL and INL to less than 0.15 LSB and 0.24 LSB, respectively. The measured ENOB with a 100 MHz full-power input is 3.84 bits and 3.48 bits, at 3 GS/s and 4GS/s, respectively. The ADC achieves a bit error rate of less than 10^-11 at 4 GS/s.     

Evaluation of three 32-bit CMOS adders in DCVS logic for self-timedcircuits

The efficient implementation of adders in differential logic can be carried out using a new generate signal (N) presented in this paper. This signal enables iterative shared transistor structures to be built with a better speed/area performance than a conventional implementation. It also allows adders developed in domino logic to be easily adapted to differential logic. Based on this signal, three 32-b adders in differential cascode switch voltage (DCVS) logic with completion circuit for applications in self-timed circuits have been fabricated in a standard 1.0-μm two-level metal CMOS technology. The adders are: a ripple-carry (RC) adder, a carry look-ahead (CLA) adder, and a binary carry look-ahead (BCL) adder. The RC adder has the best levels of performance for random input data, but its delay is significantly influenced by the length of the carry propagation path, and thus is not recommended in circuits with nonrandom input operands. The BCL adder is the fastest but has a high cost in chip area. The CLA adder provides an intermediate option, with an area which is 20% greater than that of the RC adder. Its average delay is slightly greater than that of the other two adders, with an addition time which increases slowly with the carry propagate length even for adders with a high number of bits     

Analysis of 6 T SRAM cell in sub-45 nm CMOS and FinFET technologies

The semiconductor industry is exploring technology scaling to pursuit the Moore's Law. The actual processors operation frequency grows the need for fast memories. Nowadays, SRAM cells occupy a considerable area in VLSI designs. Several challenges follow this performance improvement achieved at each new technology node. The Process, Voltage, and Temperature (PVT) variability, aging effects due to BTI influence and radiation-induced Single-Event Upset (SEU) are three relevant issues on the SRAM nanometer design. The main contribution of this work is to present a panorama of these effects on SRAM as technology scaling. The most frequently used SRAM cell, the 6 T, is evaluated from 45 nm to 7 nm bulk CMOS and FinFET technologies. Results observed the effects on delay, power, and noise margins, showing that process variability can introduce up to 100% of power deviation. Read Static Noise Margin (RSNM) presents about 20% of deviation under process variability and the cell noise robustness is reduced dramatically in worst cases. FinFET technology and high-performance models show more robustness against radiation. SRAM cells with low-power devices demonstrated more sensitive to delay degradation due to aging effects.     

Latchup performance of retrograde and conventional n-well CMOS technologies

The static and transient latchup performance of conventional and retrograde n-well CMOS technologies is compared. The retrograde n-well structures are shown to have superior latchup immunity, due primarily to the reduced n-well sheet resistance and the greater tolerance to thin p on p⁺epitaxial material.     

Full-VDD and near-threshold performance of 8T FinFET SRAM cells

We evaluate full-V_DD and near-threshold operation of nine novel eight-transistor (8T) FinFET SRAM cell schemes using shorted gate (SG) and low power FinFET configurations for 32-bit by 1024-word SRAMs. 8T SRAM schemes outperform six-transistor schemes since SG-configured read FinFETs minimize delay and reverse-biased inverter FinFETs’ back gates reduce leakage current by up to 97%. At near-threshold, 8T FinFET cell delay increases by 56%, but leakage current and energy-delay product (EDP) decrease by up to 16% and 77%, respectively. 8T Low-Power Inverters scheme uses these configurations and reduces EDP by 60% (79% at near-threshold) versus the conventional SG 8T FinFET SRAM.     

自由空间与偏振无关的1×N和N×1光开关设计

基于光开关在全光通信和光互连网络中的重要作用，设计了由偏振光分束器（PBS）、相位型空间光调制器（PSLM）和反射镜构成的1×N和N×1光开关模块，其中N＝2m，m＝1，2，3…。该设计利用PSLM对信号光偏振态的控制，在自由空间实现信号的路由和切换，信号光的P光分量和S光分量同时参与工作，并在输出端口重新会合，因此光开关表现出与信号光偏振态无关的特点。同时，该光开关所用器件少，具有结构简单紧凑、控制方便灵活和操作迅速快捷等特点，而且具有很强的重构与升级能力，对于构建大规模的交换矩阵具有一定的作用。     

Design of a Process Variation Tolerant Self-Repairing SRAM for Yield Enhancement in Nanoscaled CMOS

In nanoscaled technologies, increased inter-die and intra-die variations in process parameters can result in large number of parametric failures in an SRAM array, thereby, degrading yield. In this paper, we propose a self-repairing SRAM to reduce parametric failures in memory. In the proposed technique, on-chip monitoring of leakage current and/or delay of a ring oscillator is used to determine the inter-die process corner of an SRAM die. Depending on the inter-die Vt shift, the self-repair system selects the proper body bias to reduce parametric failures. Simulations using predictive 70-nm device show that the proposed self-repairing SRAM improves design yield by 5%-40%. A test-chip is designed and fabricated in IBM 0.13-mum CMOS technology to successfully demonstrate the operation of the self-repair system.     

基于90nm CMOS工艺的2GS/s 8-bit 折叠插值ADC的设计*

本文基于90nm CMOS工艺设计了一个单通道 2GSPS, 8-bit 折叠插值模数转换器。本设计采用折叠级联结构,通过在折叠电路间增加级间采样保持器的方法增加量化时间。电路中采用了数字前台辅助校正技术以提高信号的线性度。后仿结果表明,在奈奎斯特采样频率,该ADC的微分非线性DNL<±0.3LSB,积分非线性INL<±0.25LSB,有效位数达到7.338比特。包括焊盘在内的整体芯片面积为880×880 μm2。电路在1.2V 电源电压下功耗为210mW.     

A 20-mW 640-MHz CMOS Continuous-Time Σ∆ ADC With 20-MHz Signal Bandwidth, 80-dB Dynamic Range and 12-bit ENOB

A wide bandwidth continuous-time sigma-delta ADC, operating between 20 and 40 MS/s output data rate, is implemented in 130-nm CMOS. The circuit is targeted for applications that demand high bandwidth, high resolution, and low power, such as wireless and wireline communications, medical imaging, video, and instrumentation. The third-order continuous-time SigmaDelta modulator comprises a third-order RC operational-amplifier-based loop filter and 4-bit internal quantizer operating at 640 MHz. A 400-fs rms jitter LC PLL with 450-kHz bandwidth is integrated, generating the low-jitter clock for the jitter-sensitive continuous-time SigmaDelta ADC from a single-ended input clock between 13.5 and 40 MHz. To reduce clock jitter sensitivity, nonreturn-to-zero (NRZ) DAC pulse shaping is used. The excess loop delay is set to half the sampling period of the quantizer and the degradation of modulator stability due to excess loop delay is avoided with a new architecture. The SigmaDelta ADC achieves 76-dB SNR, -78-dB THD, and a 74-dB SNDR or 12 ENOB over a 20-MHz signal band at an OSR of 16. The power consumption of the CT SigmaDelta modulator itself is 20 mW and in total the ADC dissipates 58 mW from the 1.2-V supply     

中波红外数字域640×8 TDI成像系统设计及验证

时间延迟积分(Time Delay Integration,TDI)探测器被广泛应用于弱光成像和航天遥感等领域,这种探测器能够在保持空间分辨率和平台运行速度的条件下有效提高探测器的等效积分时间,提高系统成像质量和探测率.近年来,红外数字域TDI探测器因具有动态范围大、积分级数连续可调和高帧频等优点而受到越来越多的关注和研究.通过对红外数字域TDI技术进行原理分析和数字系统设计,结合国产640×8中波红外数字域TDI探测器设计成像系统进行性能的分析及验证,重点研究了红外数字域TDI探测/成像系统的盲元补偿、非均匀校正、像元调整、时间延迟累加和过采样等关键技术,为未来红外数字域TDI探测器在空间遥感中的应用提供了技术支持.     

Design techniques and implementation of an 8-bit 200-MS/s interpolating/averaging CMOS A/D converter

The design issues and tradeoffs of a high-speed high-accuracy Nyquist-rate analog-to-digital (A/D) converter are described. The presented design methodology covers the complete flow from specifications to verified layout and is supported by both commercial and internally developed computer-aided design tools. The major decisions to be made during the converter's design at both the architectural and the circuit level are described and the tradeoffs are elaborated. The approach is demonstrated for a real-life test case, where a Nyquist-rate 8-bit 200-MS/s 4-2 interpolating/averaging A/D converter was developed in a 0.35-/spl mu/m CMOS technology. The signal-to-noise-plus-distortion ratio at 40 MHz is 42.7 dB and the total power consumption is 655 mW.     

90nm CMOS工艺SRAM的优化及应用

提出了一种优化的SRAM,它的功耗较低而且能够自我修复.为了提高每个晶圆上的SRAM成品率,给SRAM增加冗余逻辑和E-FUSE box从而构成SR SRAM.为了降低功耗,将电源开启/关闭状态及隔离逻辑引入SR SRAM从而构成LPSR SRAM.将优化的LPSR SRAM64K×32应用到SoC中,并对LPSR SRAM64K×32的测试方法进行了讨论.该SoC经90nm CMOS工艺成功流片,芯片面积为5.6mm×5.6mm,功耗为1997mW.测试结果表明:LPSR SRAM64K×32功耗降低了17.301%,每个晶圆上的LPSRSRAM64K×32成晶率提高了13.255%.     

90nm CMOS工艺SRAM的优化及应用

提出了一种优化的SRAM,它的功耗较低而且能够自我修复.为了提高每个晶圆上的SRAM成品率,给SRAM增加冗余逻辑和E-FUSE box从而构成SR SRAM.为了降低功耗,将电源开启/关闭状态及隔离逻辑引入SR SRAM从而构成LPSR SRAM.将优化的LPSR SRAM64K×32应用到SoC中,并对LPSR SRAM64K×32的测试方法进行了讨论.该SoC经90nm CMOS工艺成功流片,芯片面积为5.6mm×5.6mm,功耗为1997mW.测试结果表明:LPSR SRAM64K×32功耗降低了17.301%,每个晶圆上的LPSRSRAM64K×32成晶率提高了13.255%.