Effects of Ag contents and deposition temperatures on the electrical and optical behaviors of Ag-doped Cu2O thin films

Cu₂O-Ag thin films were co-deposited by reactive sputtering on glass substrates. During deposition, Ag contents and deposited temperatures were varied. After deposition, a UV-VIS-NIR photometer and a Hall measurement system were used to characterize the optical and electrical properties of these films. The results showed that the Cu₂O-Ag thin films had a decreased optical transmittance with the increase of Ag contents. The resistivity was also decreased, which is most likely due to the formation of Ag phase. Through the measurement of photo-induced conductivity, it was found that, when Ag concentration was at 4 at.%, the film had the highest increase in conductivity under light irradiation. This is due to the co-existence of Ag₂O and Cu₂O. However, when deposited at a temperature higher than room temperature, the photo-induced conductivity of this film became less obvious, apparently due to the dissociation of Ag₂O. The results of Photoluminescence (PL) measurement confirmed that the Cu₂O-Ag(4 at.%) sample might produce more electron-hole pairs than other samples, which caused the increase of conductivity.     

Crystal structure and optical absorption investigations on β-In2S3 thin films

The crystal structure of annealed β-In₂S₃ thin films with different thickness was investigated by X-ray diffraction technique. Lattice parameters, crystallite size and microstrain were calculated. It was found that the lattice parameters are independent on film thickness, while annealing temperatures increase them. Crystallite sizes were increased with the increase of the film thickness and improved by annealing temperatures. In all cases, the microstrains were decreased gradually with the increase in both film thickness and annealing temperatures. Optical properties of β-In₂S₃ thin films were performed in the spectral range from 400 to 2500 nm to determine the optical constants (n and k), the high frequency dielectric constant, ε_∞, the lattice dielectric constant, ε_L, and the energy gap. The optical constants were found to be independent on film thickness in the range from 200 to 630 nm. The high frequency dielectric and lattice dielectric constants of the as-deposited film increased by annealing temperatures. The energy gap for the as-deposited In₂S₃ was found to be 2.60 eV and increased to 2.70 and 2.75 eV by annealing at 423 and 473 K for 1 h, respectively.     

Low-temperature deposition of crystallized TiO2 thin films

Crystallized TiO₂ thin films were deposited on a non-heated substrate by two methods: oxygen-ion-assisted reactive evaporation (ORE) and high-rate reactive sputtering (HRS) using two sputtering sources. When the films were deposited on an unheated glass substrate, amorphous films were initially grown on the substrate in case of both deposition methods, although an increase in oxygen-ion energy above 600 eV led to a growth of a crystallized layer on the amorphous films in the case of ORE. When the films were deposited by HRS on a crystallized TiO₂ seed layer, homo-epitaxial growth was observed, and crystallized TiO₂ films with an excellent hydrophilic property were obtained on unheated substrate. In contrast, when the films were deposited by ORE, amorphous films were initially grown on the crystallized TiO₂ seed layer in a similar manner to the deposition of films on a glass substrate, and homo-epitaxial growth was not observed. These results suggest that the large kinetic energy of titanium atoms arriving at the substrate during HRS is a key factor in promoting epitaxial growth of the TiO₂ film at low temperature.     

Enhancement of photoluminescence in Er-doped Ag-SiO2 nanocomposite thin films: A post annealing study

Silver-silica (with Ag 2.8 at.% and 8.7 at.%) nanocomposite (NC) thin films doped with Er⁺³ (0.1-0.9 at.%) were synthesized by atom beam co-sputtering using 1.5 keV Ar atoms. Optical absorption and photoluminescence (PL) studies of pristine and annealed films were performed, together with Rutherford backscattering and secondary ion mass spectroscopy studies for elemental characterization of the NC films. Optical absorption results of pristine and annealed NC film (with Ag ∼8.7 at.%) confirmed the formation of Ag nanoparticles evidenced by the appearance of characteristic surface plasmon resonance absorption features. Photoluminescence (PL) studies, carried out using Ar Laser pumping at 0.488 μm, the wavelength that the Er ions can absorb resonantly, indicated the presence of PL emission around 1.54 μm in the case of all the as-synthesized samples. The observed PL peak corresponds to the atomic transitions of Er as reported in literature. A relative enhancement in the intensity of PL peak has been observed after annealing the NC films. In the case of NC film with 0.9 at.% Er and 8.7 at.% Ag, the enhancement in PL intensity is almost twice, with respect to the as-deposited sample, for a heat treatment of about 1 h at 600 °C in a nitrogen atmosphere. However for a NC film with Er 0.1 at.% + Ag 2.8 at.%, the PL intensity is enhanced by approximately 3.7 times after annealing at 400 °C for 1 h in nitrogen atmosphere. Since the samples with surface plasmon resonance (SPR) did not show the PL enhancement, the role of SPR in the enhancement of the PL is ruled out. The enhanced PL emission from Er and Ag codoped silica indicates that the Er photo-stimulation is mediated by the energy transfer from Ag nanostructures or ions to Er. Lifetimes of PL peaks for the pristine and annealed samples were also studied. The observed lifetime ∼10 ms is a good indication of excellent PL efficiency.     

Influence of Sm2Ba4CuBiOy phase content on Jc of SmBa2Cu3O7/Sm2Ba4CuBiOy nano-composites

Presence of various nano-scale Y₂Ba₄CuMO_y phase inclusions in YBa₂Cu₃O_7−δ phase matrix are shown to improve magnetic flux pinning over wide range of magnetic fields. We first fabricate single phase of Sm₂Ba₄CuBiO_y (Sm-2411) using a solid-state reaction and then introduced them into SmBCO single grains. Top seeded melt growth (TSMG) has been used to grow SmBCO single grains in air atmosphere. A significant improvement in J_c is observed, over wide magnetic fields, for single grains containing Sm-2411nano-phase inclusions when compared to that of SmBa₂Cu₃O_7−δ/Sm₂BaCuO₅ composites. When compared to YBCO nano-composites, SmBCO composites are shown to exhibit high J_c at medium range of magnetic fields (1–2 T) at 77 K.     

Pulsed laser deposition of Bi2Te3 thin films

A feasibility study of thin stoichiometric Bi₂Te₃ films by pulsed laser deposition (PLD) was performed, the difficulty arising from the differences of vapour pressure between Te and Bi. The films were elaborated using a pulsed Nd:YAG laser under various experimental conditions and were characterized by electron microsprobe, scanning electron microscopy, X-ray diffraction and secondary ion mass spectroscopy analyses. Congruent transfer of stoichiometry occurs from the target to the substrate on several cm² and a good crystallinity can be achieved, even on glass substrates at room temperature, by combining convenient target to substrate facing and distance, respectively. Depletion in Te observed in some films may result from a laser beam-plume interaction that was put forward during elaboration of films on large scale substrates.     

SrBi2Nb2O9的PLD制备及其非线性光学特性

利用脉冲激光沉积(PLD)方法在MgO(100)基片上生长了SrBi2Nb2O9薄膜.XRD分析表明在MgO基片上生长的薄膜呈(115)单一取向,具有良好的结晶性;XPS数据分析得到薄膜中Sr、Bi和Nb的原子比约为122.05.利用Z扫描技术对薄膜的三阶非线性光学性质进行了测量,通过开孔(Open-aperture)和小孔(Close-aperture)的测量,计算出三阶非线性光学极化率的实部Rex(3)和虚部Imx(3)分别为4.139×10-7eSu,1.104×10-7eSu.     

Pulsed laser deposition optical waveguiding Bi3TiNbO9 thin films on fused silica

The layered-perovskite ferroelectric Bi₃TiNbO₉ (BTN) optical waveguiding thin films have been prepared on fused silica substrates by pulsed laser deposition (PLD). X-ray θ-2θ scans revealed that the films are single-phase perovskite and highly (00l) textured. The wavelength dependence of the transmittance of the films was determined. We obtained an average transmittance of 75% in the wavelength range of 400-1100 nm and the band gap E_g=3.55 eV. The optical waveguiding properties of the films were characterized by using prism-coupling method. The distinct m lines of the guided transverse magnetic (TM) and transverse electric (TE) modes of the BTN films waveguide have been observed. The cross sectional morphology of the film was studied by scanning electron microscopy (SEM).     

Chemical deposition of Al2O3 thin films on Si substrates

Uniform Al₂O₃ films were deposited on silicon substrates by the sol–gel process from stable coating solutions. The technological procedure includes spin coating deposition and investigating the influence of the annealing temperature on the dielectric properties. The layers were studied by Fourier transform infrared spectroscopy and Scanning Electron Spectroscopy. The electrical measurements have been carried out on metal–insulator–semiconductor (MIS) structures. The C–V curves show a negative fixed charge at the interface and density of the interface state, Dit, 3.7 × 10¹¹ eV^− 1cm^− 2 for annealing temperature at 750 °C.     

Preparation and optical properties of LiInS2 thin films

LiInS₂ films with an orthorhombic (wurtzite-like) structure were prepared by rapid evaporation onto glass and (111)-oriented silicon substrates. Various characterization techniques such as X-ray analysis, Rutherford backscattering analysis and scanning electron microscopy were used to evaluate the quality of the films. Single-phase films were obtained using a source containing excess sulphur $\text{(}\text{[S]}\text{[LiInS}{}_2\text{]}\text{= 0.5}$ by weight) at a substrate temperature of 620 K. The films were annealed at 570 K for 40 min. The optical absorption in LiInS₂ thin films was studied in the photon energy range 2.5–3.5 eV. LiInS₂ was found to posses a direct band gap with a gap energy of 3.170±0.005 eV at room temperature.     

Effect of deposition conditions on the characteristics of ZnO-SnO2 thin films deposited by filtered vacuum arc

ZnO-SnO₂ thin films were deposited on microscope glass substrates by filtered vacuum arc deposition system. The effects of deposition conditions on film characteristics were studied using cathodes prepared with three different ratios of atomic concentrations of Zn to Sn. The micro and the macro properties of the films were investigated as a function of cathode composition, arc current, background oxygen deposition pressure, and deposition time. X-ray diffraction analysis indicated that deposited films were amorphous, independent of the cathode composition. The atomic concentration ratio of Zn to Sn in the film as determined by XPS analysis were 33.9%: 10.6%, 43.9%: 3.8%, 44.7%: 4.7% for 50%: 50%, 70%: 30% and 90%: 10% Zn-Sn alloy cathodes, respectively. Film transmission in the visible was 70 to 90%, affected by interference effects. The maximal and minimal values of the refractive index n and the absorption coefficient k in the visible were 2.11 to 1.94 and 0.07 to 0.001, respectively. The optical band gap was in the range of 3.13 to 3.59 eV. All films were highly resistive independent of deposition conditions used.     

Formation and properties of AgInSe2 thin films by co-evaporation

The electrical and optical properties of silver indium selenide thin films prepared by co-evaporation have been studied. X-ray diffraction indicates that the as prepared films were polycrystalline in nature. The lattice parameters were calculated to be a=0.6137 and b=1.1816 nm. Composition was determined from energy dispersive analysis of X-ray. Silver indium selenide thin films were also prepared by bulk evaporation of powdered sample for comparative study. They have an optical band gap (E_g) of 1.25 eV and it is a direct allowed transition. Refractive index (n) and extinction coefficient (k) were calculated from absorption and reflection spectra. Steady-state photoconductivity was measured from 300 to 400 K. Carrier lifetime was calculated from transient photoconductivity measurements at room temperature at different intensities of illumination.     

Structural, optical and electrical properties of thermally evaporated Ag2S thin films

Thin films of Ag₂S are prepared on glass and quartz substrates by a thermal evaporation method. The structural studies show that the films are well crystallized with an acanthite structure. The optical properties of the films are investigated using spectrophotometric measurements of transmittance and reflectance at normal incidence in the wavelength range 500-2200 nm. The refractive index, n, and the absorption index, k, of Ag₂S are determined from the absolute values of the measured transmittance and reflectance. The dispersion of refractive index in Ag₂S is analyzed using the concept of the single oscillator. Within this concept the oscillator energy, E₀, and the dispersion energy, E_d, can be determined as 5 and 32.5 eV, respectively. It is interesting to note that Ag₂S appears to fall into the ionic class. The values of the lattice dielectric constant and the ratio of the carrier concentration to the effective mass are also determined as 7.77 and 1.7×10⁴⁷ kg⁻¹ m⁻³, respectively. The analysis of the spectral behavior of the absorption coefficient in the intrinsic absorption region reveals an indirect allowed transition with a band gap of 0.96 eV and associated phonons of 0.05 eV. Measurements of the dark electrical resistivity is studied as a function of film thickness and temperature. The dark electrical resistivity decreases with increasing film thickness. Graphical representation of log ρ as a function of reciprocal temperature yields two distinct linear parts indicating the existence of two activation energies ΔE₁ and ΔE₂ as 0.18 and 0.28 eV respectively. Discussion on the obtained results and their comparison with the previous published data is also given.     

Large third-order optical nonlinearity of SrBi2Nb2O9 thin films fabricated by pulsed laser deposition

SrBi₂Nb₂O₉ (SBN) thin films with a single phase of layered perovskite structure have been fabricated on fused quartz substrates at room temperature by pulsed laser deposition. The XRD and AFM analysis indicated that the films had better crystallinity, less rough surface morphology, and larger grain size with increasing oxygen pressure. The nonlinear optical properties of the samples were determined using a single beam Z-scan technique at a laser wavelength of 532 nm with laser duration of 25 ps. The real and imaginary parts of the third-order nonlinear optical susceptibility χ⁽³⁾ of the films were measured to be 3.18 × 10^− 8 esu and 5.94 × 10^− 9 esu, respectively.     

Third-order optical nonlinear absorption in Bi1.95La1.05TiNbO9 thin films

Single phase Bi_1.95La_1.05TiNbO₉ (LBTN-1.05) thin films with a layered aurivillius structure have been fabricated on fused silica substrates by pulsed laser deposition at 700 °C. The X-ray diffraction pattern revealed that the films are single-phase aurivillius. The band gap, linear refractive index and linear absorption coefficient were obtained by optical transmittance measurements. The film exhibits a high transmittance (> 70%) in visible-infrared region and the dispersion relation of the refractive index vs. wavelength follows the single electronic oscillator model. The nonlinear optical absorption property of the film was determined by the single beam Z-scan method using 800 nm with a duration of 100 fs. A large positive nonlinear absorption coefficient β = 5.95 × 10^− 8 m/W was determined experimentally. The results showed that the LBTN-1.05 is a promising material for applications in absorbing-type optical devices.     

Influence of Nb dopant on the structural and optical properties of nanocrystalline TiO2 thin films

In this study, preparation of Nb-doped (0-20 mol% Nb) TiO₂ dip-coated thin films on glazed porcelain substrates via sol-gel process has been investigated. The effects of Nb on the structural, optical, and photo-catalytic properties of applied thin films have been studied by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy. Surface topography and surface chemical state of thin films was examined by atomic force microscope and X-ray photoelectron spectroscopy. XRD and Raman study showed that the Nb doping inhibited the grain growth. The photo-catalytic activity of the film was tested on degradation of methylene blue. Best photo-catalytic activity of Nb-doped TiO₂ thin films were measured in the TiO₂-1 mol% Nb sample. The average optical transmittance of about 47% in the visible range and the band gap of films became wider with increasing Nb doping concentration. The Nb⁵⁺ dopant presented substitutional Ti⁴⁺ into TiO₂ lattice.     

The optical properties of thin films of Sb2O3

The refractive index of Sb₂O₃ thin films deposited on a variety of substrates at temperatures from 15° to 200°C is measured as a function of wavelength in the range 300–4000 nm. The clarity of the films and the values of the refractive index are correlated with the degree of orientation of the crystallites comprising the films.     

Electrochemical deposition of MoS2 thin films by reduction of tetrathiomolybdate

Molybdenum sulphide was cathodically electrodeposited from aqueous solutions of sodium tetrathiomolybdate. The as-deposited films were X-ray amorphous with a composition, measured by microprobe analysis, close to MoS₂. Annealing these films in Ar resulted in highly-textured films of MoS₂ with the van der Waals planes parallel to the substrate. A small expansion in the c spacing of the annealed films was explained by the presence of oxygen in the crystals. A direct bandgap of 1.78 eV was found for the annealed films.     

Preparation of LiMn2O4 thin films by aqueous solution deposition

Cathode material LiMn₂O₄ thin films were prepared by aqueous solution deposition using lithium acetate and manganese acetate as starting materials. The structures, morphologies, and the first discharge specific capacity of the thin films were investigated as a function of annealing temperature and time. The cycling properties of the thin films were also examined. The results show that LiMn₂O₄ thin films prepared by this method are homogenous and crack-free. The thin film annealed at 750°C for 30 min has good rechargeability. The capacity loss per cycle is about 0.05% after being cycled 100 times.     

Effects of physical growth conditions on the structural and optical properties of sputtered grown thin HfO2 films

HfO₂ thin films were prepared by reactive DC magnetron sputtering technique on (100) p-Si substrate. The effects of O₂/Ar ratio, substrate temperature, sputtering power on the structural properties of HfO₂ grown films were studied by Spectroscopic Ellipsometer (SE), X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectrum, and X-ray photoelectron spectroscopy (XPS) depth profiling techniques. The results show that the formation of a SiO_x suboxide layer at the HfO₂/Si interface is unavoidable. The HfO₂ thickness and suboxide formation are highly affected by the growth parameters such as sputtering power, O₂/Ar gas ratio during sputtering, and substrate temperature. XRD spectra show that the deposited films have (111) monoclinic phase of HfO₂, which is also supported by FTIR spectra. XPS depth profiling spectra shows that highly reactive sputtered Hf atoms consume some of the oxygen atoms from the underlying SiO₂ to form HfO₂, leaving Si-Si bonds behind.