Influence of ITO patterning on reliability of organic light emitting devices

Indium tin oxide (ITO) films are widely used for a transparent electrode of organic light emitting devices (OLEDs) because of its excellent conductivity and transparency. Two types of ITO substrates with different surface roughness were selected to use as anode of OLEDs. In addition, two types of etching process of ITO substrate, particularly the etching time, were also carried out. It was found that the surface roughness and/or the etching process of ITO substrate strongly influenced on an edge of ITO surface, further affected the operating characteristics and reliability of devices.     

大功率白光发光二极管光源的制作

采用GaN基蓝色发光芯片为激发源,结合黄色硅酸盐系列荧光粉封装成大功率白光发光二极管(W-LEDs).利用24颗大功率5W白光发光二极管制作了两种不同连接方式的W-LEDs路灯:2并12串,和4并6串.设计了相应的驱动电路,对这两种不同连接方式的大功率W-LEDs路灯的光电特性及其在照明光源中的应用条件作了深入地研究和对比,测试了它们的伏安特性,发光效率以及功效,结果表明2并12串连接方式的W-LEDs路灯具有更加稳定的伏安特性,更高的照度以及更高的功效.与高压钠灯和荧光灯的特性相比较,W-LEDs路灯作为绿色环保光源灯,具有更高的显色指数,更加环保,节能.     

有机发光器件(ITO/TPD/Alq3/Mg/Al)的光电性能研究

为了研究有机电致发光器件光电性能随工作参数的变化，对ITO／TPD(50nm)／AIq3(50nm)／Mg／Al的实验数据进行分析，发现该器件在低压时属于注入电流限制，高压时为陷阱电荷限制(TCLC)。另外，采用实验数据验证复合理论，发现通过电场数据和电流密度数据(F^2／J)能够直接地反映器件量子效率随电流密度的变化趋势。     

Tuning the colour of white polymer light emitting diodes

Colour tuning of white polymer light emitting diode (LED) light sources can be attained by various methods at various stages in the production process of the lamps and/or by the design of the active material incorporated in the LEDs. In this contribution we will describe the methods and discuss the physical background of colour tuning. Furthermore, the material design has led to polymers which are more stable during electrical stress, so that colour shift during lifetime can be excluded for white polymer LEDs.     

Effect of fabrication process on characteristics of phosphorescence organic light emitting diodes with methoxy-substituted starburst low-molecule as a host

The effect of dry process and wet process on the characteristics of phosphorescence organic light-emitting devices (OLEDs) employing a phosphorescent dye fac-tris(2-phenylpyridine) iridium(III) (Ir(ppy)₃) doped into a methoxy-substituted starburst low-molecule material methoxy-substituted 1,3,5-tris[4-(diphenylamino) phenyl]benzene (TDAPB) are investigated. The FT-IR and absorption spectra of TDAPB films fabricated by a dry process, and a wet process are almost same, and the PL spectra of those films are different. The carrier transport capability of TDAPB by a dry process is lower than that by a wet process. The photoluminescence intensity of Ir(ppy)₃ doped in TDAPB fabricated by a wet process is higher than that by a dry process. A maximum external current efficiency of more than 20 cd/A and luminance of more than 10,000 cd/m² were obtained. Maximum luminance of devices monotonously decreases with increasing the thickness of a dry-processed emitting layer. The main emission zone of the OLED was located in almost at the center of the emitting layer. The improvement of device performance in the OLED fabricated by a wet process was achieved due to the high efficient energy transfer from TDAPB to Ir(ppy)₃, high carrier transporting capability and the formation of homogeneous film, compared with that fabricated by a dry process.     

柔性有机薄膜电致发光显示材料及器件

有机薄膜电致发光显示器件(OLED)近年来得到了迅猛发展,是未来全固体平板式彩色显示器的重要候选者,其最大优势之一是可以制作成柔性显示器件。本文综述了柔性有机电致发光材料及器件的发展概况、工作原理与优缺点,目前制作此类器件中存在的困难及解决这些困难的有效措施。     

Optical characteristics of organic light emitting diode with IrQ(ppy)2-5Cl and its emitter

The synthesis and photophysical study of a cyclometalated mixed-ligand iridium(III) complex are reported. The iridium complex (called IrQ(ppy)₂-5Cl) has two cyclometalated 2-phenylpyridine (ppy) ligands and one 8-hydroxyquinoline (Q) ligand, where one of the H atom is substituted by Cl atom. Absorption and photoluminescence spectra are studied for the neat film and films of IrQ(ppy)₂-5Cl doped in 4,4′-N,N′-dicarbazole-biphenyl and polystyrene, together with the electroluminescence spectra using multi-layer light emitting devices. The electronic states are studied using density functional theory calculations. Emission bands are observed at 502 and 666 nm, which arise from ppy and Q ligands, respectively.     

Improving light efficiency of white polymer light emitting diodes by introducing the TPBi exciton protection layer

We fabricated and evaluated the efficient white polymer light emitting diode (WPLED) by introducing TPBi exciton protection layer with ITO/PEDOT:PSS/PFO:MEH-PPV/TPBi/LiF/Al structure. PFO and MEH-PPV were prepared by the spin coating as the light emitting host and guest materials. TPBi was used as exciton protection material. The dependences of the MEH-PPV concentrations into the PFO (PFO:MEH-PPV) on the optical and electrical properties of the WPLEDs were investigated. The effect of the introduction of TPBi layer was studied by means of the property comparison between the samples with and without TPBi layer. The maximum luminance with 1480 cd/m² was obtained at the MEH-PPV concentration of 1.0 wt.% for the ITO/PEDOT:PSS/PFO:MEH-PPV/LiF/Al structure. In addition, the maximum luminance and current efficiency of the WPLED with TPBi layer were 7560 cd/m² at 12 V and 7.8 cd/A at 10 cd/m², respectively. The CIE color coordinates for WPLED with 1.0 wt.% MEH-PPV concentration was found to be (x, y) = (0.36, 0.33), showing pure white color.     

Optical property of poly(9,9-dioctylfluorene) gel with β phase and application to polymer light emitting diode

Poly (9,9-dioctylfluorene)(F8) gel with β phase has been investigated in terms of optical absorption, photoluminescence measurements and Fourier transform infrared spectroscopy. The optical properties of the F8 gel markedly changed in the temperature range from 70 to 80 °C owing to the vibration of polymer chain related to the glass transition temperature of F8. F8 films by thermal printing method had the characteristic particulate morphology. Current efficiencies of polymer light emitting diodes (PLEDs) with the β phase of F8 fabricated by the thermal printing method were better than that with the amorphous phase of F8 by the spin-coating method. We demonstrate the β phase effects of PLEDs characteristics by the thermal printing method.     

Red organic light emitting devices with reduced efficiency roll-off behavior by using hybrid fluorescent/phosphorescent emission structure

Organic light emitting device (OLED) with a fluorescence-interlayer-phosphorescence emissive structure (FIP EML) is proposed to solve efficiency roll-off issue effectively. By doping fluorescent emitter of 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) and phosphorescent emitter of tris(1-phenylisoquinolinolato-C2,N)iridium(III) (Ir(piq)₃) into the different regions of emission zone to form FIP EML in red OLED, an improvement of more than 20% in luminance efficiency roll-off compared with that of typical phosphorescent OLED with single EML in 10-500 mA/cm² range has been obtained. Detailed mechanisms have been studied. Such improvement should be attributed to the distinct roles of the two emitters, where DCJTB mainly used to influence the carrier transport leading to an improved balance of charge carriers while Ir(piq)₃ functions as the radiative decay sites for most generated excitons. Meanwhile, with the help of the formation of FIP EML, the redistribution of excitons in recombination zone, the suppression of non-radiative exciton quenching processes and the elimination of energy transfer loss also contribute to the enhancement of efficiency roll-off. The method proposed here may provide a route to develop efficient OLED for high luminance applications.     

High performance inkjet printed phosphorescent organic light emitting diodes based on small molecules commonly used in vacuum processes

High efficiency phosphorescent organic light emitting diodes (OLEDs) are realized by inkjet printing based on small molecules commonly used in vacuum processes in spite of the limitation of the limited solubility. The OLEDs used the inkjet printed 5 wt.% tris(2-phenylpyridine)iridium(III) (Ir(ppy)₃) doped in 4,4′-Bis(carbazol-9-yl)biphenyl (CBP) as the light emitting layer on various small molecule based hole transporting layers, which are widely used in the fabrication of OLEDs by vacuum processes. The OLEDs resulted in the high power and the external quantum efficiencies of 29.9 lm/W and 11.7%, respectively, by inkjet printing the CBP:Ir(ppy)₃ on a 40 nm thick 4,4′,4″-tris(carbazol-9-yl)triphenylamine layer. The performance was very close to a vacuum deposited device with a similar structure.     

Study of thermal degradation of organic light emitting device structures by X-ray scattering

We report the process of thermal degradation of organic light emitting devices (OLEDs) having multilayered structure of [LiF/tris-(8-hydroxyquinoline) aluminum(Alq₃)/N,N′-Bis(naphthalen-1-yl)-N,N′-bis(phenyl)benzidine (NPB)/copper phthalocyanine (CuPc)/indium tin oxide (ITO)/SiO₂ on a glass] by synchrotron X-ray scattering. The results show that the thermally induced degradation process of OLED multilayers has undergone several evolutions due to thermal expansion of NPB, intermixing between NPB, Alq₃, and LiF layers, dewetting of NPB on CuPc, and crystallization of NPB and Alq₃ depending on the annealing temperature. The crystallization of NPB appears at 180 °C, much higher temperature than the glass transition temperature (T_g = 96 °C) of NPB. The results are also compared with the findings from the atomic force microscope (AFM) images.     

Properties of 2,6-di-tert.-butyl-4-(2,5-diphenyl-3,4-dihydro-2H-pyrazol-3-yl)-phenol as hole-transport material for life extension of organic light emitting diodes

We studied structural and optical properties of 5′ replaced pyrazoline by hindered phenol 2,6-di-tert.-butyl-4-(2,5-diphenyl-3,4-dihydro-2H-pyrazol-3-yl)-phenol (HPhP) films for application in organic light-emitting diode (OLED) as a hole transport layer (HTL). Analysis of impedance and current-voltage characteristics of ITO/HPhP/Al structure has shown that the current is limited by a space charged region with exponential distribution of traps near Fermi level. Characteristics of electroluminescence structure ITO/HPhP/Alq₃/poly(ethylene glycol) dimethyl ether/Al was studied and analyzed. We performed the comparative analysis of luminescence time decay in two types of electroluminescent devices with HTL from pyrazolines derivative with hindered phenol and without it. We showed that hindered phenol in HTL slows down the degradation processes in OLED.     

Preliminary results on a-SiC:H based thin film light emitting diode by hot wire CVD

Preliminary results on the first hot wire deposited a-SiC:H based thin film light emitting p–i–n diode having the structure glass/TCO(SnO₂:F)/p-a-SiC:H/i-SiC:H/n-a-SiC:H/Al are reported. The paper discusses the results of our attempts to optimize the p-, i- and the n-layers for the desired electrical and optical properties. The optimized p-layers have a bandgap E_g2 eV and conductivity a little lower than 10⁻⁵ (Ω cm)⁻¹. On the other hand, the optimized n-type a-SiC:H show a conductivity of 10⁻⁴ (Ω cm)⁻¹ with bandgap 2.06 eV. The highest bandgap of the intrinsic layer is approximately 3.4 eV and shows room temperature photoluminescence peak at approximately 2.21 eV. Thin film p–i–n diodes having i-layers with E_g from 2.7 to 3.4 eV show white light emission at room temperature under forward bias of >5 V. However, the 50-nm thick devices show appreciable reverse leakage current and a low emission intensity, which we attribute to the contamination across the p–i interface since these devices are made in a single chamber with the same filament.     

Pure white phosphorescent organic light-emitting diodes using a phosphine oxide derivative as a high triplet energy host material

Pure white phosphorescent organic light-emitting diodes were developed using a high triplet energy (3.02 eV) host material (PPO1) with a carbazole and a phosphine oxide unit. Deep blue emitting tris((3,5-difluoro-4-cyanophenyl)pyridine) iridium was doped into the wide triplet bandgap PPO1 host material and the blue emitting layer was combined with a red/green phosphorescent emitting layer. The doping concentration, thickness of the emitting layer and the electron transport material were managed to optimize the device performance of the white device. A pure white color with a color coordinate of (0.29,0.33) and a high current efficiency of 27.2 cd/A was achieved from the white organic light-emitting diodes with the PPO1 host after optimization.     

Anode material properties of Ga-doped ZnO thin films by pulsed DC magnetron sputtering method for organic light emitting diodes

This study examined the anode material properties of Ga-doped zinc oxide (GZO) thin films deposited by pulsed DC magnetron sputtering along with the device performance of organic light emitting diodes (OLEDs) using GZO as the anode. The structure and electrical properties of the deposited films were examined as a function of the substrate temperature. The electrical properties of the GZO film deposited at 200 °C showed the best properties, such as a low resistivity, high mobility and high work function of 5.3 × 10^− 4Ω cm, 9.9 cm²/Vs and 4.37 eV, respectively. The OLED characteristics with the GZO film deposited under the optimum conditions showed good brightness > 10,000 cd/m². These results suggest that GZO films can be used as the anode in OLEDs, and a lower deposition temperature of 200 °C is suitable for flexible devices.     

Effect of blue doping concentration on the light emission of two-color phosphorescent white organic light emitting diodes

The effect of the doping concentration of the blue dopant on the light emission of two color phosphorescent white organic light-emitting diodes (PHWOLEDs) doped with a blue dopant and a red dopant was investigated. The red emission was intensified at high blue doping concentration due to direct energy transfer from the blue dopant to the red dopant by charge trapping. The changes in the electroluminescence spectra could be well correlated with the light emission mechanism of the PHWOLEDs.     

Improvement of color purity in white OLED based on Zn(HPB)2 as blue emitting layer

We synthesized zinc (II) [2-(2-hydroxyphenyl)benzoxazole] (Zn(HPB)₂) as blue emitting materials and evaluated in the organic light emitting diodes (OLEDs). The layer of Zn(HPB)₂ doped with 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) (Zn(HPB)₂:DCJTB) as emitters has been demonstrated. The structure of the device is indium-tin-oxide (ITO)/N,N′-bis-(1-naphthl)-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB, 40 nm)/Zn(HPB)₂/Zn(HPB)₂:DCJTB/Alq₃ (20 nm)/LiF/Al. The thickness of Zn(HPB)₂ layer was 0, 10, 20, 30 nm at the same time the thickness of Zn(HPB)₂:DCJTB layer were 40, 30, 20, 10 nm. When thickness of Zn(HPB)₂ layer was 30 nm and the thickness of Zn(HPB)₂:DCJTB layer was 10 nm, white emission is achieved. The Commission Internationale de l'Eclairage (CIE) coordinates of the white emission are (0.304, 0.332) at an applied voltage of 10.5 V.     

Characteristics of organic light emitting diodes with copper iodide as injection layer

We have studied the use of a thin copper iodide (CuI) film as an efficient injection layer of holes from indium tin oxide (ITO) anode in a light-emitting diode structure based on tris-8-hydroxyquinoline aluminium (Alq3). The results of impedance analysis of two types of diode structures, ITO/CuI/Alq3/poly(ethylene glycol) dimethyl ether/Al and ITO/Alq3/poly(ethylene glycol) dimethyl ether/Al, are presented. Comparative analysis of their current density-voltage, luminance-voltage and impedance characteristics shows that presence of CuI layer facilitates injection of holes from ITO anode into the light-emitting layer Alq3 and increases electroluminescence efficiency of the organic light emitting diodes.     

Photo- and electroluminescent properties of bithiophene disubstituted 1,3,4-thiadiazoles and their application as active components in organic light emitting diodes

Photo- and electroluminescence of five bithiophene disubstituted 1,3,4-thiadiazoles, constituting a new class of solution processable materials for organic opto-electronics, were studied. It was found that the introduction of alkyl solubilizing substituents bathochromically shifted the photo- and electroluminescence bands. The most pronounced effect was observed for the substitution at the C_α position which changed the emitting light color from bluish to green. All five derivatives were tested in host/guest type organic light emitting diodes (OLEDs) with either poly(N-vinylcarbazole) (PVK) or poly(N-vinylcarbazole) + 2-tert-butylphenyl-5-biphenyl-1,3,4-oxadiazole (PVK + PBD) matrices. The latter matrix turned out especially well suited for these guest molecules yielding devices of varying color coordinates. The best luminance (750 cd/m²) was measured for 2,5-bis(5′-octyl-2,2′-bithiophene-5-yl)-1,3,4-thiadiazole with the luminous efficiency exceeding 0.4 cd/A.