Flat epitaxial ferromagnetic CoFe2O4 films on buffered Si(001)

Ferromagnetic films of spinel CoFe₂O₄ have been grown epitaxially on Si(001) using CeO₂/YSZ double buffer layers. The heterostructures were built in a single process by pulsed laser deposition with real-time control by reflection high-energy electron diffraction. YSZ and CeO₂ grow cube-on-cube on Si(001) and CoFe₂O₄ grows with (111) out-of-plane orientation, presenting four in-plane crystal domains. The interface with the buffer layers is smooth and the CoFe₂O₄ surface is atomically flat, with roughness below 0.3 nm. The films are ferromagnetic with saturation magnetization around 300 emu/cm³. The properties signal that CoFe₂O₄ is a good candidate for monolithic devices based on ferromagnetic insulating spinels.     

Fabrication of GaN epitaxial thin film on InGaZnO4 single-crystalline buffer layer

Epitaxial (0001) films of GaN were grown on (111) YSZ substrates using single-crystalline InGaZnO₄ (sc-IGZO) lattice-matched buffer layers by molecular beam epitaxy with a NH₃ source. The epitaxial relationships are (0001)_GaN//(0001)_IGZO//(111)_YSZ in out-of-plane and [112¯0]_GaN//[112¯0]_IGZO//[11¯0]_YSZ in in-plane. This is different from those reported for GaN on many oxide crystals; the in-plane orientation of GaN crystal lattice is rotated by 30° with respect to those of oxide substrates except for ZnO. Although these GaN films showed relatively large tilting and twisting angles, which would be due to the reaction between GaN and IGZO, the GaN films grown on the sc-IGZO buffer layers exhibited stronger band-edge photoluminescence than GaN grown on a low-temperature GaN buffer layer.     

Structure characterization of Pd/Co/Pd tri-layer films epitaxially grown on MgO single-crystal substrates

Pd/Co/Pd tri-layer films were prepared on MgO substrates of (001), (111), and (011) orientations at room temperature by ultra high vacuum rf magnetron sputtering. The detailed film structures around the Co/Pd and the Pd/Co interfaces are investigated by reflection high energy electron diffraction. Pd layers of (001)_fcc, (111)_fcc, and (011)_fcc orientations epitaxially grow on the respective MgO substrates. Strained fcc-Co(001) single-crystal layers are formed on the Pd(001)_fcc layers by accommodating the fairly large lattice mismatch between the Co and the Pd layers. On the Co layers,, Pd polycrystalline layers are formed. When Co films are formed on the Pd(111)_fcc and the Pd(011)_fcc layers, atomic mixing is observed around the Co/Pd interfaces and fcc-CoPd alloy phases are coexisting with Co crystals. The Co crystals formed on the Pd(111)_fcc layers consist of hcp(0001) + fcc(111) and Pd(111)_fcc epitaxial layers are formed on the Co layers. Co crystals epitaxially grow on the Pd(011)_fcc layers with two variants, hcp(11?00) and fcc(111). On the Co layers, Pd(011)_fcc epitaxial layers are formed.     

Structure and magnetic properties of Fe epitaxial thin films prepared by UHV rf magnetron sputtering on GaAs single-crystal substrates

Fe thin films were prepared on GaAs single-crystal substrates of (100)_B3, (110)_B3, and (111)_B3 orientations by ultra high vacuum rf magnetron sputtering. The effects of substrate orientation and substrate temperature on the film growth, the structure, and the magnetic properties were investigated. On GaAs(100)_B3 substrates, Fe(100)_bcc single-crystal films are obtained at 300 °C, whereas Fe films consisting of bcc(100) and bcc(221) crystals epitaxially grow at room temperature (RT). Fe(110)_bcc and Fe(111)_bcc single-crystal films are respectively obtained on GaAs(110)_B3 and GaAs(111)_B3 substrates at RT-300 °C. The in-plane lattice spacings of these Fe epitaxial films are 0-9% larger than the out-of-plane lattice spacings due to accommodation of lattice mismatch between the films and the substrates. The film strain is decreased by employing an elevated substrate temperature of 300 °C. The in-plane magnetization properties are reflecting the magnetocrystalline anisotropy of bulk bcc-Fe crystal.     

Characterization of strain relaxation of (0 0 1) oriented SrTiO3 thin films grown on LaAIO3 (1 1 0) by means of reciprocal space mapping using x-ray diffraction

The strain relaxation of SrTiO₃ r.f. magnetron sputter-deposited thin films on LaAlO₃ substrates have been studied by x-ray diffraction mapping. An investigation of different x-ray optics shows that a, so called, hybrid mirror monochromator in combination with a triple-bounce analyser crystal provides very good conditions for characterization of thin distorted films grown epitaxially onto substrates with high structural order. The in-plane and out-of-plane lattice parameters of the SrTiO₃ films could accurately be determined since the x-ray diffraction optics enabled the splitting of substrate peaks, caused by the twinning in the rhombohedral LaAlO₃ to be resolved and, provided film peak intensities are high enough, to precisely establish their positions. Films in the thickness range 9.3–144.0 nm were found to be partially relaxed, having a tetragonal distortion due to in-plane strain that was found to decrease with increasing film thickness, approaching an undistorted SrTiO₃ lattice parameter of 0.3927 nm. This value is 0.6% larger than the bulk indicating that the compositions of the films were slightly non-stoichiometric. The strain relaxation of the grown films was found to follow the general trend of a predicted strain–thickness relation based on energy density balance considerations regarding misfit dislocations and lattice strain.     

Solid-phase epitaxial growth of (111)-oriented Si film on InGaO<Subscript>3</Subscript>(ZnO)<Subscript>5</Subscript> buffer layer

In this paper, the (0001) surface of an InGaO₃(ZnO)₅ (c-IGZO) single-crystal buffer layer was used as a seed layer to control the orientation of a Si film in solid-phase heteroepitaxial growth at 950 °C. Despite a large lattice misfit of 20%, electron backscattering diffraction (EBSD) and transmission electron microscope (TEM) measurements substantiated that the (111)-oriented Si layers are grown epitaxially on the c-IGZO (0001) surface, which is explained by domain-matched epitaxy. The process can be further developed for low temperature process by utilizing excimer laser annealing to produce highly uniform (111) oriented Si TFT over a large area.     

Strain engineering of piezoelectric properties of strontium titanate thin films

The in-plane and out-of-plane piezoelectric properties of (001) strontium titanate (SrTiO₃, STO) epitaxial thin films on pseudo-cubic (001) substrates are computed as a function of in-plane misfit strain. A nonlinear thermodynamic model is employed, which takes into account the appropriate mechanical boundary conditions, the electromechanical coupling between the polarization and the in-plane lattice mismatch, and the self-strains of the ferroelastic and ferroelectric phase transformations. The piezoelectric behavior of epitaxial STO films is described in various strain-induced ferroelectric phase fields in a temperature range from ?50 to 50 °C. The calculations show that by carefully tailoring in-plane misfit strains in both tensile and compressive ranges, piezoelectric coefficients that are of the order of prototypical lead zirconate titanate and other lead-based piezoceramics can be realized. These results indicate that strain engineered STO films may be employed in a variety of sensor and actuator applications as well as surface acoustic wave devices and thin-film bulk acoustic resonators.     

Effect of Vacuum and O2 Annealing Treatments on Structural and Magnetic Properties of La0.5Ca0.5MnO3 Thin Films

La_0.5Ca_0.5MnO₃ films with a nominal thickness of 80 nm were epitaxially grown on (001) SrTiO₃ and SrLaAlO₄ substrates by the pulsed laser deposition technique. The magnetic moment of the films was observed to depend strongly on the oxygen stoichiometry, tuned by heat treatments in vacuum and O₂ environments. A distinctly larger out-of-plane lattice parameter was measured for the vacuum-annealed films due to transformation of some Mn⁴⁺ ions to Mn³⁺. Both the variations in the magnetic moment and out-of-plane lattice parameter during vacuum annealing can be recovered by subsequent heat treatments in O₂ environment. In this study, it is shown that the enhancement of the magnetic moment via O₂ annealing is considerably less prominent than the respective improvement obtained by the application of compressive epitaxial strain.     

Magnetically anisotropic barium ferrite thin films on sapphire by sol-gel process

Hexagonal barium ferrite (BaM) thin films have been prepared by sol-gel technique involving spin coating and annealing in air. Different ratios of Ba to Fe, different annealing temperatures and different annealing time are explored. X-ray diffraction shows that the films have been epitaxially grown on the sapphire (001) plane with [100] direction of BaM parallel to [110] of Al₂O₃, and the c-axes of them being parallel, while magnetic measurements show magnetically anisotropic loops with in-plane and out-of-plane intrinsic coercivity of 87.5 kA/m and 230.8 kA/m, respectively.     

Anisotropic lattice strain relaxation of MgO/SrTiO3(001) in a textured island growth mode

The out-of-plane and in-plane lattice parameters were measured by in-situ reflection high-energy electron diffraction (RHEED) at the initial growth stage of MgO thin films on SrTiO₃(001) substrates in the growth mode of islands. The in-plane lattice was found to relax immediately after initiating the film deposition, and the majority of the in-plane strain was relieved at the film thickness of 2 nm. Beyond the thickness, the in-plane lattice almost was kept unchanged, and the out-of-plane lattice continued to relax gradually. The anisotropic strain can be attributed to the change of strain energy due to film texture during the ripening process. The relationship between strain and texture, grain size was discussed from the viewpoint of energy competition.     

Fully strained low-temperature epitaxy of TiN/MgO(001) layers using high-flux, low-energy ion irradiation during reactive magnetron sputter deposition

Epitaxial TiN layers, 0.3 μm thick, are grown on MgO(001) in the absence of applied substrate heating using very high flux, low-energy (below the lattice atom displacement threshold), ion irradiation during reactive magnetron sputter deposition in pure N₂ discharges. High-resolution x-ray diffraction, reciprocal lattice maps, and transmission electron microscopy analyses reveal that the TiN(001) films grow with an (001)_TiN||(001)_MgO and [100]_TiN||[100]_MgO orientation relationship to the substrate. The layers are fully coherent with no detectable misfit dislocations. For comparison, TiN/MgO(001) films grown at temperatures of 700-850 °C under similar conditions, but with no intentional ion irradiation, are fully relaxed with a high misfit dislocation density. Thus, the present results reveal that intense low-energy ion irradiation during film growth facilitates high adatom mobilities giving rise to low-temperature epitaxy, while the low growth temperature quenches strain-induced relaxation and suppresses misfit dislocation formation.     

Effect of lattice matching on microstructure and electrical conductivity of epitaxial ARuO3 (A = Sr, Ca and Ba) thin films prepared on (001) LaAlO3 substrates by laser ablation

(001) SrRuO₃ (SRO), (001) CaRuO₃ (CRO) and (205) BaRuO₃ (BRO) thin films were epitaxially grown on (001) LaAlO₃ substrates by laser ablation, and the effect of lattice matching on the microstructure and electrical conductivity was investigated. (001) SRO and (001) CRO thin films had a terrace with orthogonal step structure, whereas (205) BRO thin film had an orthogonal structure with tetragonal grains. Epitaxial thin films showed metallic conduction, and the (001) CRO thin films exhibited the highest electrical conductivity, i.e. 1.5 × 10⁵ S m^− 1, among the (001) SRO, (001) CRO and (205) BRO thin films. The smaller misfit between thin film and substrate could be associated with the higher electrical conductivity.     

Epitaxial Growth of CeO<Subscript>2</Subscript>/YSZ/CeO<Subscript>2</Subscript> Buffer Layers on Textured Ni Substrates for YBCO Conductors

CeO₂/YSZ/CeO₂ buffer layers were deposited on textured Ni substrates byin situ pulsed laser deposition. The out-of-plane texture and in-plane texture of the buffer layers were characterized by X-ray diffraction ω-scans and ϕ-scans. Using this CeO₂/YSZ/CeO₂ architecture as the buffer layers, high quality YBCO films with a zero-resistanceT _c about 90 K and a self-field critical current densitiesJ _c above 10⁶ A/cm² at 77 K can be obtained on Ni substrates.     

Epitaxial Growth of CeO2/YSZ/CeO2 Buffer Layers on Textured Ni Substrates for YBCO Conductors

CeO₂/YSZ/CeO₂ buffer layers were deposited on textured Ni substrates by in situ pulsed laser deposition. The out-of-plane texture and in-plane texture of the buffer layers were characterized by X-ray diffraction ω-scans and ϕ-scans. Using this CeO₂/YSZ/CeO₂ architecture as the buffer layers, high quality YBCO films with a zero-resistance T _c about 90 K and a self-field critical current densities J _c above 10⁶ A/cm² at 77 K can be obtained on Ni substrates.     

Epitaxial growth and relaxation of γ-Al2O3 on silicon

0.5-10 nm-thick single crystal γ-Al₂O₃ films was epitaxially grown, at high temperature, on Si(001) and Si(111) substrates using electron-beam evaporation techniques. Reflection High Energy Electron Diffraction studies showed that the Al₂O₃ films grow pseudomorphically on Si (100) up to thickness of 2 nm. For higher thicknesses, a cubic to hexagonal surface phase transition occurs. Epitaxial growth and relaxation were also observed for Si(111). The film surfaces are smooth and the oxide-Si interfaces are atomically abrupt without interfacial layers.     

Lattice Expansion by Adding Oxygen to Control Crystallographic Orientations in Chemically Ordered L10 FePt Films

We fabricated L1₀ FePt thin films by sputtering in reactive oxygen on polycrystalline glass substrates, and we investigated the magnetic properties and crystallographic orientations of the films. Oxygen addition during the FePt deposition promoted heteoroepitaxial growth by decreasing the lattice misfit with the Ag underlayer. In an oxygen/argon ratio of 1.5-3.0 vol.%, the in-plane lattice parameter of the FePt films expanded, and the lattice misfit with the Ag underlayer decreased from 6.3 to 3.9% in the as-deposited state, as determined by grazing incidence X-ray diffraction (GIXRD). Annealing at 700degC for 1 min produced a heteroepitaxially grown L1₀ (001) texture with a large out-of-plane coercivity of 8.8 kOe and a nucleation field of kOe. Transmission electron microscopy showed that average grain size in the as-deposited films was about 4-5 nm and was in the range of 10-15 nm in the annealed films, indicating that there was some grain growth.     

Heteroepitaxial growth of Si on ZnSiP2

Silicon layers were deposited epitaxially on natural facets of solution-grown ZnSiP₂ crystals by hydrogen reduction of SiHCl₃. Orientation relationships between the diamondstructured layer and the chalcopyrite type substrate were determined giving the results: (112) ZnSiP₂ parallel to (111) Si and (101) ZnSiP₂ parallel to (201) Si. Structural and some electrical properties of the heterojunctions were investigated. Considerations concerning the misfit dislocations are presented.     

Oxidation and reduction behavior of Ni and NiO layers sputter deposited onto yttrium-stabilized zirconia single crystals

Thin single-crystal yttrium-stabilized zirconia (YSZ) substrate was prepared by indentation fracture and mechanical polishing. The specimen was analyzed in detail by transmission electron microscopy (TEM). The (110) edge surface was faceted, in contrast to the smooth (001) edge surface, and the facet surfaces were identified as {111}-type planes. Good cross-sectional TEM specimens comprised of crystalline Ni and NiO layers deposited on YSZ edge surface could be prepared by sputtering of a Ni support grid using Ar⁺ ion milling and subsequent re-deposiotion on the smooth (001) fracture surface of the YSZ specimen. The epitaxial growth of a pure Ni layer on the YSZ edge planes occurred during ion milling in vacuum. However, subsequent ion milling of the specimen after exposure in air for several minutes resulted in the formation of a NiO layer on top of the first Ni layer. Reduction of the NiO layer was confirmed by electron energy-loss spectroscopy after annealing at 973 K in a vacuum of 1.2 × 10⁻⁵ Pa. This Ni layer was re-oxidized upon annealing in air at 1073 K for 1 h. The deposition behavior of the Ni and NiO layers was discussed on the basis of the surface oxidation of Ni layer.     

Effects of MgO and MgO/Pd seed-layers on perpendicular magnetic anisotropy of CoPd thin films

We studied the effects of MgO and MgO/Pd seed-layers on perpendicular magnetic anisotropy in co-sputtered CoPd films. CoPd films with the MgO seed-layer showed perpendicular magnetic properties that were superior to those with another after annealing. The loop squareness was unity, indicating strong perpendicular magnetic anisotropy, when the MgO seed-layer was thicker than 2 nm. We observed that the out-of-plane CoPd (111) texture was strongly developed, as well as the in-plane tensile stress in the CoPd films. The magnetoelastic anisotropy coming from a negative magnetostriction λ₁₁₁ under the in-plane tensile stress dominating over other anisotropies is likely responsible for creating such strong perpendicular magnetic anisotropy. In the case of the MgO/Pd seed-layer, the CoPd films showed mixed anisotropy having both in-plane and out-of-plane magnetic anisotropy components after annealing. The appearance of the strong (100) texture of the CoPd films with the MgO/Pd seed-layer is believed to have caused the decrease in the perpendicular magnetic anisotropy that originated from the magnetoelastic anisotropy due to the additional contribution from the positive magnetostriction λ₁₀₀ but less contribution from the negative magnetostriction λ₁₁₁ when the CoPd films are under in-plane tensile stress.     

Epitaxial growth of CeO2/yttria-stabilized ZrO2 double layer films on biaxially textured Ni tape via electrostatic spray assisted vapour deposition

Epitaxial growth of CeO₂ and yttria-stabilized ZrO₂ (YSZ) double layer films has been successfully carried out on biaxially textured nickel substrates at a temperature between 400 and 600 °C using electrostatic spray assisted vapour deposition method. The structure of the double layer was characterized by X-ray diffraction and scanning electron microscopy. The results show that highly oriented CeO₂/YSZ double buffer films were formed epitaxially onto biaxially textured Ni substrates. The orientation relationships between YSZ layer and Ni substrate are 001_YSZ//001_Ni and 110_YSZ//100_Ni, while the orientation relationships between CeO₂ and YSZ are 001_CeO2//001_YSZ and 100_CeO2//100_YSZ.