碱性蚀刻的不良分析和改善

蚀刻工艺是印制线路板制作过程中一个非常重要的步骤,怎样提高蚀刻均匀性,降低蚀刻报废,非常的重要。设计方面:不同厚度的底铜做相应的补偿;设备方面:要从喷咀类型、喷咀方向、喷咀到板距离、蚀刻抽风量、蚀刻液的喷淋压力、防卡板上控制;药水和工艺方面:要从配制子液、蚀刻母液的氯铜比、蚀刻液温度、蚀刻液PH值等进行控制;检验方面:要从首末件的确认上控制批量蚀刻不良的流出。     

微电子制造中Ti的湿法蚀刻

综述了微电子制造工艺中Ti的湿法蚀刻的发展过程,指出了传统Ti蚀刻液的缺点;介绍了最新研究改良后的多种Ti蚀刻液配方和化学药品、废气、废液对人员环境的影响.     

碱性蚀刻废液再生方法评述

碱性蚀刻废液是一种铜含量高、废液浓度高的工业废水,将其再生具有较高的经济价值和环境效益。文章综述了碱性蚀刻废液的污染危害,全面介绍了碱性蚀刻废液的再生方法,指出了碱性蚀刻液再生的发展方向。     

碱性蚀刻液影响PCB蚀刻速率的因素研究

采用正交试验方法,研究了碱性氯化铜蚀刻液中（Cu2＋）、（Cl-）、pH值、及蚀刻液温度对铜箔蚀刻速率的影响规律.结果表明：在因素水平范围内,对蚀刻速率影响的大小顺序为蚀刻液温度〉Cu2＋浓度〉pH值〉Cl-浓度,最佳蚀刻工艺条件为（Cu2＋）=100g/L,（Cl-）=120g/L,pH=8.5,T=50℃,静态蚀刻速率可达8.76mm/min.     

酸性氯化铜液蚀刻化学及蚀刻液再生方法评述

为了清洁生产、生态环境和人们健康，研究和开发酸性氯化铜蚀刻液的再生方法及再生设备，已成为当前印制板制造行业污染防治工作的重点。为此，文章首次论述了印制板酸性氯化铜液蚀刻化学及蚀刻液的再生方法，讨论了各种方法的优缺点，进而指出了酸性蚀刻液再生的发展趋势。     

PCB板酸性蚀刻机理、工艺参数及故障排除

蚀刻工艺是目前PCB板制作中的重要工序之一,特别是随着微电子技术的飞速发展,大规模集成电路和超大规模集成电路的广泛应用,对PCB板制造技术提出了更高的要求,正向着高精度、高密度的方向飞速发展,对PCB板蚀刻的线宽公差也提出更高、更严的技术要求,所以,充分了解和掌握铜在各种类型蚀刻液中的蚀刻机理,并通过严格的科学实验,测定出铜在各类蚀刻液中工艺参数,才能把控好PCB板蚀刻这一关键工序。本文就我公司AS-301型酸性蚀刻液特点、蚀刻机理、来料检测、操作规程、工艺流程、故障排除等作简单介绍。     

一种适用于mSAP制程的减铜蚀刻液

电子产品的小型化和功能多元化,推动线路板也逐渐向布线高度密集化的方向发展,加工精度要求不断提高,常规减成法已不能满足精度要求。改良半加成法(modified Semi-Additive Process,mSAP),起初被用IC载板的加工,近年来逐渐被应用于高精密线路板的制造。改良半加成法的一个技术难点之一是电镀铜层蚀刻后表面出现针孔缺陷。填孔电镀后的线路板表面铜层厚度偏高,需要进行减薄处理以满足后续加工要求。然而,由于填孔电镀过程中,不可避免地会出现铜的异常结晶,异常结晶处的铜晶粒更容易被减铜蚀刻液腐蚀,形成针孔,影响产品制作良率。尽管通过针孔缺陷可以通过烘烤的方式加以改善,增加成本、降低生产效率。基于此,我们开发了一种减铜蚀刻液,考察了蚀刻液中硫酸和双氧水的浓度、双氧水稳定剂、缓蚀剂等因素对蚀刻针孔的影响。最终,制备了一种适用于电镀铜减薄工艺的蚀刻液,发现该蚀刻液能够显著抑制针孔缺陷的产生。     

电路板绿色制造技术探讨(5)

(接2010年第9期)5.3.5蚀刻液循环再生技术蚀刻液因其铜含量高,较早为业界回收利用,目前已有比较成熟的PCB行业蚀刻废液回收回用装置,该装置安装在线路板厂内,直接与蚀刻机相连,对蚀     

国外VLSI等离子蚀刻设备的现状及发展趋势

本文述评了国外等离子干法蚀刻技术及设备的发展概况。主要介绍了可进行亚微米图形蚀刻的磁控反应离子蚀刻及新型的电子回旋共振(ECR)等离子蚀刻技术原理和处于开发应用阶段的模块组合式蚀刻设备概况。最后讨论了几种可能进入256MDRAM时代的蚀刻技术的发展趋势。     

PCB废液铜含量的波美计快速测定法

通过实验为企业量身定制电路板生产蚀刻工序排放含铜废液的波美度与铜含量的对照表,利用波美计测定排放蚀刻液波美度,经波美度对照表快速查阅蚀刻液铜含量百分比.该方法具有不消耗化学试剂、对实验条件低、快速、简便等优点.     

A model based on geometrical construction in designing apencil-shaped fiber probe for near-field optics

We propose a model based on geometrical considerations to determine the etching times required in fabricating a pencil-shaped fiber probe. In this model, we introduce a minimum etching time which is defined as the time required for having a zero apex diameter. Based on its value, the total etching times required in fabricating the pencil-shaped probe could be determined. We have found that the theoretically determined minimum etching time of 2.1 min agrees very well with our experimental value of 2 min     

Thermal transient characterisation of the etching quality of micro electro mechanical systems

The paper presents a non-destructive thermal transient measurement methodology that can reveal micron-sized differences among etched layers of MEMS structures. MEMS resonator devices and bridge structures made of polycrystalline silicon differing in etching times were investigated by simulations and measurements as well. Simulations showed that tiny differences in etching times of the sacrificial layers can cause significant changes in heat distribution. In the measurement process the voltage transients of the devices were captured. The results were transformed into temperature transients. Utilising temperature transients, small differences could be detected among the structures. The paper demonstrated simulation and measurement experiments by the applicability of thermal transient methodology for non-destructive testing of the etching quality in MEMS structures.     

单晶硅各向异性湿法刻蚀的研究进展

单晶硅各向异性湿法刻蚀是制作硅基微电子机械系统(MEMS)器件的重要步骤之一,由于具有刻蚀均匀性好、批量大、成本低的优点而深受关注。首先回顾了单晶硅各向异性湿法刻蚀的刻蚀机理,比较了三种常用各向异性刻蚀液的刻蚀性质,讨论了刻蚀形状的控制技术。然后着重介绍了表面活性剂修饰的单晶硅各向异性湿法刻蚀速率和刻蚀表面光滑度等特性,以及面向MEMS应用的基于该刻蚀技术的各种微纳新结构;分析了表面活性剂分子在刻蚀过程中的作用,强调了表面活性剂分子在单晶硅表面的吸附性对改变刻蚀表面的物理性质的重要性。最后在此基础上,归纳了单晶硅各向异性湿法刻蚀的发展情况,探讨了其未来的发展方向。     

Texturization of mono-crystalline silicon solar cells in TMAH without the addition of surfactant

Etching was performed on(100) silicon wafers using silicon-dissolved tetramethylammonium hydroxide (TMAH) solutions without the addition of surfactant.Experiments were carried out in different TMAH concentrations at different temperatures for different etching times.The surface phenomena,etching rates,surface morphology and surface reflectance were analyzed.Experimental results show that the resulting surface covered with uniform pyramids can be realized with a small change in etching rates during the et...     

干法腐蚀在硅微波功率晶体管研制中的应用

干法腐蚀与传统的湿法腐蚀相比,具有明显的各向异性,并且具有较好的可重复性、可控性及在硅片加工中易实现连续生产等优点,已成为目前硅微波功率晶体管研制和生产的关键技术.本文对目前干法腐蚀在硅微波大功率晶体管中的应用进行了分析,指出随着硅微波功率晶体管工作频率的不断提高,对高性能各向异性的干法腐蚀技术要求也更加迫切.     

Texturization of mono-crystalline silicon solar cells in TMAH without the addition of surfactant

Texturization of mono-crystalline silicon solar cell by chemical anisotropic etching is still a key issue due to metal ions contamination and consumption of large amount of isopropyl alcohol (IPA) in a conventional mixture of potassium hydroxide (KOH) or sodium hydroxide (NaOH) and IPA. In this study, etching was performed on (100) silicon wafers using silicon-dissolved tetramethylammonium hydroxide (TMAH) solutions without addition of surfactant. Experiments were carried out in different TMAH concentration solutions at different temperatures for different etching time. The surface phenomena, etching rates, surface morphology and surface reflectance have been analyzed. Experimental results show that the resulted surface covered with uniform pyramids can be realized due to small changes of etching rates during the etching process. The etching mechanism has been explained basing on the experimental results and the theoretical considerations. It was suggested that all the components in the TMAH solutions play important roles in the etching process. Moreover, TMA+ ions may increase the wettability of the textured surface. A good textured surface can be obtained on conditions that the absorption of OH- /H2O is equilibrium with that of TMA+/SiO2(OH)22-.     

Phase Detection Used in the Optical-Emission Monitoring of SiO2/Si Plasma Etching

An experiment is carried out to evaluate phase detection as a method for the optical-emission monitoring of SiO₂/Si fluorine-plasma etching, the driving frequency serving as the reference frequency. It is shown that the output signal-to-noise ratio can thus be increased several times, so that the minimum percentage etch area for which endpoint detection is possible will be reduced from 2.1 to 0.4%. It is concluded that the new method may be practical in the etching of small windows.     

图形化蓝宝石衬底工艺研究进展

图形化蓝宝石衬底(PSS)技术是一种提高LED亮度的新技术。结合光刻和刻蚀工艺制作图形化蓝宝石衬底。有关图形化蓝宝石衬底的研究主要集中在对光刻和刻蚀工艺的研究,以及图形化蓝宝石衬底提高LED亮度的机理。目前微米级图形化蓝宝石衬底已经得到普遍的应用,与基于平坦蓝宝石衬底的LED相比,PSS-LED的发光功率提高了30%左右。图形化蓝宝石衬底技术的发展经历了从早期的条纹状图形到目前应用较广的半球形和锥形图形,从湿法刻蚀到干法刻蚀,从微米级到纳米级图形的演变。由于能够显著提高LED亮度,纳米级图形化蓝宝石必将得到广泛的运用。     

半导体微细加工中的刻蚀设备及工艺

与传统湿法腐蚀比较,干法刻蚀具有各向异性、对不同材料选择比差别较大、均匀性与重复性好、易于实现自动连续生产等优点。目前,刻蚀技术已经成为集成电路生产中的标准技术,干法刻蚀设备亦成为关键设备。本文对半导体生产中刻蚀的原理、分类,结合生产实际对刻蚀工艺进行了较系统的论述,并介绍了随着硅片尺寸的增大,工艺线条进入亚微米级时代,相应刻蚀设备的发展趋势。     

毛细管电泳芯片的制造

研究了在平整的玻璃上制作微管道的方法和玻璃－玻璃键合技术;讨论了腐蚀条件对玻璃的腐蚀速率和微管道表面形貌的影响。玻璃键合采用热键合,键合温度为620℃,得到的键合面剪切强度为玻璃本身剪切强度的0．44倍。在电冰芯片上实现了样品的分离。