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用热丝CVD的方法在3英寸的硅衬底上生长均匀的金刚石薄膜。应用了在热丝上方加石黑电极,在形核阶段相对于热丝施加一直流负偏压的预处理方法,使金刚石的成核密度达到10^10-10^11/cm^2,在3英寸镜面抛光的硅衬底上制备了平整的金刚石薄膜,生长的薄膜用SEM及喇曼光谱进行了测试。实验发现电极的位置是影响金刚石薄膜均匀性的重要因素。 相似文献
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以有机高分子化合物酒精和氢气为反应气体,用热丝CVD法在Al2O3陶瓷基片上沉积出金刚石薄膜,用拉曼光谱,X射线衍射等方法进行了表征,探索了碳源浓度、热丝温度、基片温度和预处理工艺对金刚石薄膜结构和性能的影响。并且得到了最佳的工艺条件。探讨了金刚石在Al2O3衬底上的成核和生长机理。 相似文献
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以有机高分子化合物酒精和氢气为反应气体,用热丝 CVD法在 Al2O3陶瓷基片上沉积出 金刚石薄膜 ,用拉曼光谱, X射线衍射等方法进行了表征。探索了碳源浓度、热丝温度、基片温度 和预处理工艺对金刚石薄膜结构和性能的影响,并且得到了最佳的工艺条件。探讨了金刚石在 Al2O3衬底上的成核和生长机理。 相似文献
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在硅和硬质合金基体上,用热丝CVD法生长出金刚石薄膜。利用X衍射、拉曼谱和扫描电镜对金刚石薄膜的结构形貌进行了检测,并与天然金刚石对比分析。 相似文献
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以酒精为碳源,用热丝CVD法对不同表面状态的Al2O3衬底进行了金刚石薄膜沉积的比较,用扫描电镜,喇曼光谱和X射线衍射等方法检测了沉积出的金刚石膜的质量,并讨论了它们对成核和生长的影响。 相似文献
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金刚石薄膜生长速度研究 总被引:2,自引:0,他引:2
在电子辅助热丝CVD中,研究刀具预处理对金刚石薄膜生长速度的影响。在保持生长条件不变的前提下,经酸腐蚀处理的刀具的侧、背面镀铜能使金刚石薄膜的生长速度从没有镀铜时的4μm/h增加到镀铜后的10.6μm/h。镀铜处理提高了刀具的电导率,使得热丝发射的电子在偏压电场的作用下,在刀具表面附近聚集,加速氢气和丙酮的裂解,从而提高金刚石薄膜生长速度。SEM和Raman测试结果表明,高速生长的金刚石薄膜仍然具有很高质量。 相似文献
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Nucleation and Oriented Textured Growth of Diamond Films on Si(100) via Electron Emission in Ho.t Filament Chemical Vapor Deposition 总被引:4,自引:0,他引:4
1. IntroductionIn recent years, there has been increasing illterest in the heteroepitaxial growth of diamond films'by chemicisl vapor deposition(CVD) owing to theirpromising applications for the electronic devices. Epitaxial diamond films have been successfully grown onc-BN and monocrystal diamond substrated~4]. However, it is a more imperative task to deposit heteroepitarial diamond films on St which was anticipated tobe as a low cost substrate to achieve synthesis of singlecrystalline diam… 相似文献
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金刚石厚膜的制备及应用研究 总被引:4,自引:0,他引:4
用电子增强热灯丝CVD(化学汽相沉积)方法制备出膜厚为0.1-2mm的金刚石厚膜,研究了金刚石厚膜的耐磨性和热导特性,用它制作了金刚石膜焊接刀具和半导体激光器用金刚石膜热沉。 相似文献
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Guan-Ren Lai E. N. Farabaugh A. Feldman L. H. Robins 《Journal of research of the National Institute of Standards and Technology》1995,100(1):43-49
A closed system hot filament chemical vapor deposition (CVD) reactor has been used to deposit diamond films on silicon substrates. A fixed charge of hydrogen gas is fed into the deposition system until the desired deposition pressure level is reached. A solid graphite cylindrical rod held above the tungsten filament was the carbon source. System parameters for diamond film growth have been determined. The diamond structure of the films has been verified by x-ray diffraction (XRD). Morphology typical of CVD diamond films has been observed in scanning electron microscopy (SEM). The quality of the diamond films has been evaluated by micro-Raman spectroscopy. 相似文献
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Micron-sized and precise patterns of nanocrystalline CVD diamond were fabricated successfully on substrates using dispersed nanodiamond particles, charge connection by electrostatic self-assembly, and photolithography processes. Nanodiamond particles which had been dispersed using an attritional milling system were attached electrostatically on substrates as nuclei for diamond growth. In this milling process, poly sodium 4-styrene sulfonate (PSS) was added as an anionic dispersion agent to produce the PSS/nanodiamond conjugates. Ultra dispersed nanodiamond particles with a ζ-potential and average particle size of - 60.5 mV and ~ 15 nm, respectively, were obtained after this milling process. These PSS/nanodiamond conjugates were attached electrostatically to a cationic polyethyleneimine (PEI) coated surface on to which a photoresist had been patterned in an aqueous solution of the PSS/nanodiamond conjugated suspension. A selectively seeded area was formed successfully using the above process. A hot filament chemical vapor deposition system was used to synthesize the nanocrystalline CVD diamond on the seeded area. Micron-sized, thin and precise nanocrystalline CVD diamond patterns with a high nucleation density (3.8 ± 0.4 × 10(11) cm(-2)) and smooth surface were consequently fabricated. 相似文献
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This paper discusses large area uniform diamond coatings deposited in the sp3 Inc. Model 600 hot filament diamond deposition system (made by sp3 Inc., California, USA). This model combines proven hot filament thermal reactor technology with advanced controls to produce high quality polycrystalline diamond films over a maximum square area of 380 mm × 380 mm on a wide variety of substrate materials such as carbide-based cutting tools, wear surfaces, Si wafers, etc. The reactor is characterized using instrumented 300 mm Si wafers and modified, accordingly, to optimize performance on 300 mm diameter wafers or multiple 100 mm diameter wafers. Roles of temperature and other process parameters in stress formation and development in the diamond thin films, grown in a wide area hot filament deposition system, are discussed along with some of the ways of controlling these stresses on a production basis. 相似文献
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M. Kowalska K. Fabisiak A. Wrzyszczyński A. Banaszak M. Szybowicz K. Paprocki W. Bała F. Bylicki 《Materials Science-Poland》2014,32(3):475-480
Diamond electrodes of different morphologies and qualities were manufactured by hot filament chemical deposition (HF CVD) techniques by changing the parameters of diamond growth process. The estimation of diamond quality and identification of different carbon phases was performed by Raman spectroscopy measurements. The effect of diamond quality and amorphous carbon phase content on the electrochemical response of an obtained diamond electrode in 0.5 M H2SO4 as supporting electrolyte was investigated by cyclic voltammetry with [Fe(CN)6]4?/3? as a redox probe. The kinetic parameters such as catalytic reaction rate constant k0 and electron transfer coefficient α were determined. The obtained results show that the analytical performance of undoped diamond electrodes can be implemented just by the change of diamond layers quality. 相似文献
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CVD金刚石膜的场发射机制 总被引:1,自引:0,他引:1
利用热灯丝化学气相沉积方法在光滑的钼上沉积了金刚石膜,用扫描电子显微镜和Raman谱对金刚石膜进行了分析。结果表明金刚石膜是由许多金刚石晶粒组成,晶粒间界主要是石墨相,并且在膜内有许多缺陷。金刚石膜的场发射结果表明高浓度CH4形成的金刚石膜场发射阈位电场较低浓度CH4形成的金刚石为低。这意味着杂质(如石墨)和缺陷(悬挂键)极大地影响了膜的场发射性能。根据以上结果,提出了一种CVD金刚石膜的场发射机制即膜内的缺陷增强膜内的电场,石墨增大电子的隧穿系数以增强CVD金刚石膜的场发射。 相似文献