Semiconductor quantum dots

Three-dimensionally confined semiconductor quantum dots have emerged to be a versatile material system with unique physical properties for a wide range of device applications. With the advances in nanotechnology and material growth techniques for both epitaxial and colloidal quantum dots, recently the research has been shifted largely towards quantum dot based devices for practical applications. In this short review, we have tried to assemble a selection of recent advances in the areas of quantum dots for computing and communications, solid state lighting, photovoltaics, and biomedical applications that highlight the state of the art.     

New route for preparation of luminescent mercaptoethanoate capped cadmium selenide quantum dots

We report a synthesis of cadmium selenide quantum dots (Q-CdSe) by refluxing a mixture of cadmium acetate, selenium powder, sodium sulfite and 2-mercaptoethanol in N,N′-dimethyl formamide (DMF)/water solution. X-ray and electron diffractions suggest the formation of hexagonal phase of size quantized CdSe. Based on TEM analysis, the formation of nanoparticles with an average diameter of 3.5 ± 0.5 nm is inferred. Their sols in DMF and dimethyl sulphoxide (DMSO) gave characteristic absorption peaks at 300 nm and 327 nm, which is attributed to the formation of high quality, size quantized CdSe particles. Extracted particles from the sol were readily redispersed in DMF and DMSO, which were diluted further with water without losing their optical and colloidal properties. FTIR spectroscopy suggested the formation of 2-mercaptoethanol thiolate on the particle surface, with free-OH groups available for linkage. Sols in DMSO and their solutions in water displayed an intense photoluminescence (PL).     

Novel multifunctional nanocomposites from titanate nanosheets and semiconductor quantum dots

A novel synthesis for a titanate nanosheets loaded nanocomposite has been developed. On this basis, a multifunctional material for optical applications has been fabricated with tunable refractive index, improved processing behavior and luminescent properties imparted by the incorporation of semiconductor quantum dots.Titanate synthesis, host material choice and quantum dots functionalization have been here addressed to obtain films with good optical quality and stable photoluminescence.In order to assess the potential application of the obtained nanocomposites, imprinting lithography and aerosol-based deposition techniques have been applied with promising results.The obtained nanocomposites have been characterized by UV–Vis, photoluminescence and FT-IR spectroscopy, X-ray diffraction and Transmission Electron Microscopy. The optical properties of the nanocomposite film have been tested by spectroscopic ellipsometry and M-line technique.     

MBE grown InGaN quantum dots and quantum wells: effects of in-plane localization

InGaN/GaN heterostructure samples were grown by molecular beam epitaxy using ammonia as a nitrogen precursor. The growth of InGaN/GaN self-assembled quantum dots was monitored in situ by reflection high energy electron diffraction intensity oscillations. Atomic force microscopy scans showed a very high density of InGaN islands, 1×10¹¹ cm⁻², well above the dislocation density. This could explain the increased radiative efficiency of these samples compared to homogeneous quantum wells. Light emitting diodes (LEDs) with InGaN active layers buried in GaN were realized. Electroluminescence and photocurrent spectra of these LEDs evidence a strong Stokes shift that can be attributed to high localization of carriers in InGaN layers.     

Discrete size series of CdSe quantum dots: a combined computational and experimental investigation

Ab initio computational studies were performed for CdSe nanocrystals (NCs) over a wide variety of sizes ranging from 8 to 150 atoms in conjunction with recent experimental work. The density functional based calculations indicate substantial relaxations. Changes in coordination of surface atoms were found to play a crucial role in determining the NC stability and optical properties. While optimally (threefold) coordinated surface atoms resulted in stable closed-shell structures with large optical gaps, sub-optimal coordination gave rise to lower stability and negligible optical gaps. These computations are in qualitative agreement with recent chemical etching experiments suggesting that closed shell NCs contribute strongly to photoluminescence quantum yield while clusters with nonoptimal surface coordination do not.     

半导体量子点玻璃的研究进展

介绍了半导体量子点材料禁阻类型,详细阐述了共熔法、溶胶-凝胶法、离子注入法等半导体量子点玻璃材料的制备方法,探讨了半导体量子点玻璃的尺寸效应、禁阻效应、库仑阻塞效应和非线性光学效应等特性及其未来应用前景.     

碳量子点的合成、性质及其应用

碳量子点(CQDs,C-dots or CDs)是一种新型的碳纳米材料,尺寸在10nm以下,具有良好的水溶性、化学惰性、低毒性、易于功能化和抗光漂白性、光稳定性等优异性能,是碳纳米家族中的一颗闪亮的明星。自从2006年[1]报道了碳量子点(CQDs)明亮多彩的发光现象后,世界各地的研究小组开始对CQDs进行了深入的研究。最近几年的研究报道了各种方法制备的CQDs在生物医学、光催化、光电子、传感等领域中都有重要的应用价值。这篇综述主要总结了关于CQDs的最近的发展,介绍了CQDs的合成方法、表面修饰、掺杂、发光机理、光电性质以及在生物医学、光催化、光电子、传感等领域的应用。     

Effect of the bimodal size distribution on the optical properties of self-assembled Ge/Si(001) quantum dots

In situ reflection high-energy electron diffraction, atomic force microscopy and photoluminescence spectroscopy have been combined to investigate the effects of a bimodal size distribution and of the pyramid/dome transition on the optical properties of related Ge/Si layers. It is shown that the wetting layers are inhomogeneous in thickness due to the lateral diffusion of Ge from 2D layers towards islands, while no change is observed in the island-related photoluminescence. These results obtained indicate that 3D islands are, in their early nucleation stages, formed by consuming Ge from 2D layers, and that island luminescence energy is not sensitive to the vertical confinement inside islands.     

Semiconductor quantum dots as nanoelectronic circuit components

In this paper, a systematic investigation of frequency response of CdS and CdS:Cu quantum dot devices, following microwave-assisted synthesis, is presented. Phase of the output relative to the input as a function of frequency is also recorded to have some insight into the observed low-pass filter characteristics of the as-fabricated devices. The as-fabricated quantum dot devices are found to have all the characteristics of a classical low-pass filter with optimization of gain, phase shift and cut-off frequency in the band-gap range of ‘2.5–2.6’ eV. The as-fabricated devices are tested for demodulation and satisfactory operation is obtained. This suggests for employing such nanoscale devices in the field of communications.     

Patterning nanoroads and quantum dots on fluorinated graphene

Using ab initio methods we have investigated the fluorination of graphene and find that different stoichiometric phases can be formed without a nucleation barrier, with the complete “2D-Teflon” CF phase being thermodynamically most stable. The fluorinated graphene is an insulator and turns out to be a perfect matrix-host for patterning nanoroads and quantum dots of pristine graphene. The electronic and magnetic properties of the nanoroads can be tuned by varying the edge orientation and width. The energy gaps between the highest occupied and lowest unoccupied molecular orbitals (HOMO-LUMO) of quantum dots are size-dependent and show a confinement typical of Dirac fermions. Furthermore, we study the effect of different basic coverage of F on graphene (with stoichiometries CF and C₄F) on the band gaps, and show the suitability of these materials to host quantum dots of graphene with unique electronic properties.     

Plasmonic waveguides mediated energy transfer between two distant quantum dots

We investigate theoretically the radiative energy transfer between two distant quantum dots (QDs) mediated by the guided modes of Ag nanowire. The cross decay rate between the two quantum dots is derived with Markov approximation and the decay behaviors of the superradiant state and the subradiant state of quantum dots are exhibited. Due to the interference of the radiation emitted by the two QDs, the cross decay rate, the decay rates of the superradiant state, and the subradiant state show oscillation behaviors. This reveals that energy transfer from one QD to a distant QD can be controlled by adjusting the distance between the two QDs due to the periodicity of the cross decay rate.     

One-step synthesis of water-soluble ZnSe quantum dots via microwave irradiation

A facile strategy has been developed for the synthesis of glutathione-capped ZnSe quantum dots (QDs) in aqueous media. The reaction was carried out in air atmosphere with a single step by using Na₂SeO₃, a stable and commercial Se source, to replace the commonly adopted NaHSe or H₂Se. Moreover, microwave irradiation improved the photoluminescence quantum yield (PLQY) as well as lowered the trap emission of as-prepared ZnSe QDs. The obtained QDs performed strong band-edge luminescence (PLQY reached 18%), narrow size distribution (full width at half maximum was 26-30 nm) and weak trap emission without post-treatments. The results of transmission electron microscopy and X-ray diffraction demonstrated the small particle size (2-3 nm), good monodispersity and ZnSe(S) alloyed structure of as-prepared QDs. The experimental variables including precursors and stabilizer amounts as well as pH value had significant influence on the PL properties of the ZnSe QDs.     

Cu-In-S三元量子点的合成及其性能调控

采用前驱体分解法制备了Cu-In-S量子点,研究了制备工艺对Cu-In-S量子点的形貌以及光学性能的影响。实验结果表明,反应时间和反应温度可影响Cu-In-S纳米颗粒的尺寸和光学性能。随时间增加,Cu-In-S粒径变大,同时会伴随着棒状晶体的出现,荧光发射谱的峰位发生红移。随反应温度升高,纳米晶的形核速率和长大速率增加,并且粒径也有增大,纳米晶的形状可以由单一的球形变为球形与棒状的混合,荧光谱峰位亦会发生红移。X射线光电子能谱分析表明,所制备颗粒为CuInS2纳米晶。为进一步制备无毒量子点发光器件(QLEDs)奠定了基础。     

CdTe quantum dots accelerate the speed of Pfu-based polymerase chain reaction

It has not been previously reported that the speed of polymerase chain reaction (PCR) can be accelerated by quantum dots (QDs). In the present work, the addition of cadmium telluride (CdTe) QDs resulted in significant time-saving compared with the conventional PCR. The reaction time could be significantly shortened from 143 to 46 min without compromising the general efficiency in a PCR. CdTe QD-facilitated fast PCR also displayed excellent hot-start effects.     

Polarization rotation in asymmetric semiconductor quantum dots

Rotation of input polarization arising due to the recombination of electrons from the 1s-excitonic state to the hybrid valence band states have been theoretically examined in asymmetric semiconductor quantum dots. The Jones matrix calculations suggest that the polarization rotation directly depends on the asymmetry of the quantum dot and strength of hh–lh coupling. The results advocate the suitability of quantum dots as polarizing devices.     

Metalorganic chemical vapour deposition of GaSb quantum dots on germanium

Metalorganic chemical vapour deposition (MOCVD) was used to study the growth of GaSb islands on (100)Ge. For the first time formation GaSb islands on Ge with dimensions of 250 nm wide by 100 nm high were observed using atomic force microscopy. The average density of these islands across the surface was 4×10⁸ cm⁻² for 30 s or 60 monolayers of deposition. For longer growth times, these islands coalesced as three-dimensional growth became dominant. The existence of GaSb islands for 60 monolayers of growth suggests that nucleation of islands in the GaSb/Ge system is slower compared to previously reported island growth in the GaSb/GaAs system. The size of the GaSb islands observed here is compatible with the onset of size quantisation.     

碳量子点的一步合成及其发光性质的研究

本文采用油浴加热柠檬酸一步法合成碳量子点,用HRTEM透射电镜和FTIR红外光谱对其形貌和结构进行表征。研究该碳量子点的荧光性质,初步探讨了其发光的可能机理。实验结果表明,该方法合成的碳量子点粒径大小为3~5 nm,在360 nm处有一个很强的紫外吸收峰,最大激发波长和发射波长分别为365 nm和460 nm,其光学稳定性良好,在pH5.0~7.0范围内,碳量子点的荧光强度随pH的变化比较敏感。